ETC LD1003S

PWRLITE LD1003S
High Performance N-Channel POWERJFETTM with Schottky Diode
Features
Description
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The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Added Fast Recovery Schottky Diode in same package
Applications
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DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Pin Assignments
D
4
G
2
3
Case TO252
DPAK (LD1003S)
(Surface Mount)
1
S
N – Channel JFET
And Schottky Diode
Pin Definitions
Pin Number
1
2, 4
3
Pin Name
Gate
Drain
Source
Pin Function Description
Gate. Transistor Gate
Drain. Transistor Drain
Source. Transistor Source
VDS (V)
24V
Product Summary
Rdson (Ω)
0.0045
ID (A)
50
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
Symbol
VDS
VGS
VGD
ID
ID
EAS
Ratings
24
-10
-28
50
100
220
Units
V
V
V
A
A
mJ
TJ
TSTG
T
PD
-55 to 150°C
-65 to 150°C
260°C
80
°C
°C
°C
W
LD1003S.Rev 0.93 PR 12-04
Thermal Resistance
Symbol
RΘJA
RΘJC
Parameter
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
DPAK
Ratings
80
1.6
Units
°C/W
°C/W
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The φ denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Static
BVDSX
Breakdown Voltage
ID = 0.5 mA
24
Drain to Source
VGS= -4 V
BVGDO
Breakdown Voltage
IG = -50µA
Gate to Drain
BVGSO
Breakdown Voltage
IG = -1 mA
Gate to Source
RDS(ON)
Static Drain to Source1 On
IG = 40 mA, ID=10A
Resistance (Current flows
IG = 10 mA, ID=10A
drain-to-source) See Fig. 1
IG = 5 mA, ID=10A
VGS(TH)
Gate Threshold Voltage
-1200
VDS=0.1 V, ID=250µA
Dynamic
QG
Total Gate Charge
∆VDrive =5V, ID=10A,VDS=15V
QGD
Gate to Drain Charge
QGS
Gate to Source Charge
QSW
Switching Charge
RG
Gate Resistance
TD(ON)
Turn-on Delay Time
VDD=16V, ID=15A
TR
Rise Time
VDrive = 5 V
TD(OFF)
Turn-off Delay
Clamped
Inductive Load
T
Fall Time
F
CISS
COSS
CGS
CGD
CDS
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
Schottky Diode
IR
Reverse Leakage
VF
Forward Voltage
VF
Forward Voltage
VF
Forward Voltage
Qrr
Reverse Recovery Charge
Notes:
1. Pulse width <= 500µs, duty cycle < = 2%
2
LD1003S
VDS=10V, VGS= -5 V, 1MHz.
VR=20V, Vgs = -4V
IF = 1 A
IF = 10 A
IF = 20 A
Is = 20 A di/dt = 100A/us,
Typ.
Max.
Units
V
-28
V
-12
-10
V
3.0
3.5
3.6
-800
4.0
5.5
mΩ
mΩ
-600
mV
23
14
1.8
15
0.5
5
12
2
10
3200
900
2250
750
150
0.25
300
700
900
8
nC
nC
nC
nC
Ω
ns
pF
0.3
mA
mV
mV
mV
nC
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
Total Gate Charge curves
2
0.0056
0.0054
0.0052
0.0050
0.0048
0.0046
0.0044
0.0042
0.0040
0.0038
0.0036
0.0034
0.0032
0.0030
Capacitive
Charges
Region
1
0
VGS(V)
RDS(Ohms)
RDS(ID=-10A) vs IG, at Room Tem perature.
-1
DC Charges Region
-2
-3
-4
-5
0.001
0.010
0.100
0
1.000
10
20
IG(A)
Figure 1 – RDSON vs Gate Current at ID – 10A
Capacitance vs VDS, VGS=-4V
at Room Temp
1.20E-03
3500
1.00E-03
3000
2500
8.00E-04
C(pF)
Id(A)
1.40E-03
6.00E-04
Ciss
Coss
Crss
2000
1500
4.00E-04
1000
2.00E-04
500
0
0.00E+00
0
5
10
15
20
25
0
30
5
10
Vds(V)
IG(A)
0.3
0.4
0.4
25
IG vs VGS, Drain Open
Room Temp
1.E-01
9.E-02
8.E-02
7.E-02
6.E-02
5.E-02
4.E-02
3.E-02
2.E-02
1.E-02
0.E+00
0.2
20
Figure 4 – Capacitance vs Drain Voltage Vds
IG vs VGS, Source and Drain
Drain Grounded.
Grounded.
At Room Temperature
Temperature
0.1
15
VDSV)
Figure 3 – Breakdown Voltage Vds vs Id
IG(A)
IG(A)
50
40
Figure 2 – Total Gate Charge
BVgs plot: Id vs Vds for Vgs=-4V
0.0
30
QtotG(nC)
0.5
0.5
VGS(V)
VGS(V)
Figure 5 – IG vs Gate Voltage VGS
0.6
0.6
0.7
0.7
0.8
0.8
5.0E-04
3.0E-04
1.0E-04
-1.0E-04
-3.0E-04
-5.0E-04
-7.0E-04
-9.0E-04
-1.1E-03
-1.3E-03
-14
-12
-10
-8
-6
-4
-2
0
2
VGSV)
Figure 6 – Typical Gate Voltage
Characteristic
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1003S
Product Specification
3
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
Normalized Rdson vs Temp at ID=-20A
25.0
2.00
Id, Drain Current (A)
Normalized Rdson
1.90
1.80
1.70
1.60
1.50
1.40
1.30
20.0
IG=1mA
IG=5mA
15.0
IG=10mA
IG=20mA
10.0
IG=40mA
IG=100mA
5.0
1.20
1.10
1.00
0.0
0
20
40
60
80
100
120
140
0
0.025
Temp(C)
Figure 7 – RDSON Temperature Coefficient
0.1
Ig = 40mA
Single Pulse
Tc = 25°C
100
Id, Drain Current (A)
0
-5
ID(A)
0.075
Figure 8 – On-Region Characteristics
ID vs VDS, Schottky Diode
-10
-15
10µs
100µs
10
1ms
10ms
DC
Rdson Limit
Thermal Limit
Package Limit
-20
1
-25
-1.2
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0.1
0.0
1
Figure 9 – Diode Voltage vs Current
ZthJA = f(tp) (parameter D= tp/T)
1.E+00
100.00
D = 0.5
80.00
ZthJA (K/W)
0.2
60.00
40.00
20.00
0.1
1.E-01
P(pk)
0.05
tp
0.02
T
Note:
1.
Duty Factor D = tp/T
2.
Peak Tj = P(pk)*ZthJA + TA
0.01
0.00
Single Pulse
0
50
100
150
Te m pe rature (C)
Figure 11 – Total Power Dissipation
LD1003S
100
Figure 10 – Safe Operating Area
Total Pow er Dissipation (W)
4
10
Vds, Drain-to-Source Voltage (V)
VDS(V)
Ptot (W)
0.05
Vds, Drain-to-Source Voltage (V)
200
1.E-02
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
tp (s)
Figure 12 – Normalized Thermal Response
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Ordering Information
Product Number
LD1003S
PN Marking
LD1003S
Package
TO252 (DPAK)
Notes:
This product is Pb-Free and has Tin Plated leads
Package and Marking Information:
DIMENSIONS
5.40
1.25
2.60
9.65
5.60
1.75
2.80
9.75
0.213
0.049
0.102
0.380
C2
D
LD1003S
XXXXX
XXXX
DPAK
L2
B2
A2
L4
MAX.
0.094
0.045
0.005
0.045
0.035
0.215
0.023
0.023
0.245
A
L3
R
e
A1
C
b
0.265
0.410
0.050
0.140
0.040
b1
Back View
D1
A
A1
A2
b
b1
B2
C
C2
D
D1
E
e
H
L2
L3
L4
R
Alternate
D
L2
L3
H
inch
MAX. TYP. MIN.
2.40
0.086
1.14
0.035
0.13
0.001
1.14
0.030
0.90
0.022
5.46
0.205
0.60
0.017
0.58
0.017
6.22
0.235
0.208
6.73
0.250
0.090
10.42
0.368
1.27
0.035
3.57
0.073
1.02
0.025
0.008
H
DIM.
mm.
TYP. MIN.
2.19
0.89
0.03
0.76
0.55
5.20
0.45
0.45
5.97
5.30
6.35
2.28
9.35
0.88
1.86
0.64
0.20
E
0.220
0.069
0.110
0.384
Life Support Policy
LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein:
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or
sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can
be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification
Advance Information
Preliminary
Product Status
In definition or in
Design
Initial Production
No Identification Needed
In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change without notice.
This datasheet contains preliminary data; additional and application data will be
published at a later date. Lovoltech, Inc. reserves the right to make changes at any
time without notice in order to improve design.
This datasheet contains final specifications. Lovoltech reserves the right to make
changes at any time without notice in order to improve the design.
Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1003S
Product Specification
5