PWRLITE LD1106S High Performance N-Channel POWERJFETTM with Schottky Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor “No Body Diode” provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution. Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching No “Body Diode”; extremely low Cds Added Fast Recovery Schottky Diode in same package Applications DC-DC Converters for DDR and Graphic designs Synchronous Rectifiers PC Motherboard Converters Step-down power supplies Brick Modules VRM Modules DPAK Pin Assignments D G D G S S N – Channel Power JFET with Schottky Diode Pin Definitions Pin Number 1 2 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 15V Product Summary Rdson (Ω) 0.009 ID (A) 30 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=30APK, L=0.3mH, RG=100 Ω) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25°C on large heat sink) Symbol VDS VGS VGD ID ID EAS Ratings 15 -10 -18 30 60 120 Units V V V A A mJ TJ TSTG T PD -55 to 150°C -65 to 150°C 260°C 60 °C °C °C W LD1106S.Rev 0.92 – AD 12-04 Thermal Resistance Symbol RΘJA RΘJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case DPAK Ratings 85 2.0 Units °C/W °C/W Electrical Specifications (TA = +25°C, unless otherwise noted.) The φ denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Static BVDSX Breakdown Voltage ID = 0.5 mA 15 φ Drain to Source VGS= -4 V BVGDO Breakdown Voltage IG = -50µA φ Gate to Drain BVGSO Breakdown Voltage IG = -1 mA φ Gate to Source RDS(ON) Static Drain to Source1 On IG = 40 mA, ID=10A Resistance (Current flows IG = 10 mA, ID=10A IG = 5 mA, ID=10A drain-to-source) See Fig. 1 VGS(TH) Gate Threshold Voltage -1200 VDS=0.1 V, ID=250µA Dynamic QG Total Gate Charge ∆VDrive =5V, ID=10A,VDS=15V QGD Gate to Drain Charge QGS Gate to Source Charge QSW Switching Charge RG Gate Resistance TD(ON) Turn-on Delay Time φ VDD=12V, ID=10A TR Rise Time φ VDrive = 5 V TD(OFF) Turn-off Delay Clamped Inductive Load TF Fall Time CISS Input Capacitance COSS Output Capacitance VDS=10V, VGS= -5 V, 1MHz. CGS Gate-Source Capacitance CGD Gate-Drain Capacitance CDS Drain-Source Capacitance Schottky Diode IR Reverse Leakage VF Forward Voltage VF Forward Voltage VF Forward Voltage Qrr Reverse Recovery Charge Notes: 1. Pulse width <= 500µs, duty cycle < = 2% 2 LD1106S VR=15V IF = 1 A IF = 10 A IF = 20 A Is = 20 A di/dt = 200A/us, Typ. Max. Units V -18 V -12 -10 V 5.5 6 7 8 9 mΩ mΩ -500 mV 11 6.5 1.0 7.5 1 5 10 2 8 1600 450 1100 400 110 0.25 750 1100 4 nC nC nC nC Ω ns pF 0.5 400 900 mA mV mV mV nC Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) Total Gate Charge curves RDS(ID=-10A) vs IG, Pulsed at Room Temperature. Capacitive Charges Region 1 0 Lot 1 Lot 2 Lot 3 VGS(V) RDS(Ohms) 2 0.0096 0.0094 0.0092 0.0090 0.0088 0.0086 0.0084 0.0082 0.0080 0.0078 0.0076 0.0074 0.0072 0.0070 0.001 -1 DC Charges Region -2 -3 -4 -5 0.010 0.100 0 1.000 5 10 IG(A) Figure 1 – RDSON vs Gate Current at ID – 10A 1750 1 .00 E -0 3 1500 8 .00 E -0 4 1250 C(pF) Id(A) 1 .20 E -0 3 6 .00 E -0 4 4 .00 E -0 4 Ciss Coss Crss 1000 750 500 2 .00 E -0 4 250 0 .00 E + 0 0 0 0 4 8 12 16 20 24 0 5 10 V d s(V ) IG(A) 0.3 0.4 25 IG vs VGS, Drain Open Room Temp 1.E-01 9.E-02 8.E-02 7.E-02 6.E-02 5.E-02 4.E-02 3.E-02 2.E-02 1.E-02 0.E+00 0.2 20 Figure 4 – Capacitance vs Drain Voltage Vds IG vs VGS, Source and Drain Grounded. LD103SG6, at 25'C 0.1 15 VDSV) Figure 3 – Breakdown Voltage Vds vs Id 0.5 VGS(V) Figure 5 – IG vs Gate Voltage VGS 0.6 0.7 0.8 5.0E-04 3.0E-04 1.0E-04 -1.0E-04 -3.0E-04 -5.0E-04 -7.0E-04 -9.0E-04 -1.1E-03 -1.3E-03 -14 -12 -10 -8 -6 -4 -2 0 2 VGSV) Figure 6 – Typical Gate Voltage Characteristic Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S 25 Capacitance vs VDS, VGS=-4V at Room Temp 1 .40 E -0 3 IG(A) 20 Figure 2 – Total Gate Charge B V d s p lo t: Id v s V d s fo r V g s=-4 V 0.0 15 QtotG(nC) 3 Product Specification Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) Normalized Rdson vs Temp at ID=-20A 25.0 2.00 Id, Drain Current (A) Normalized Rdson 1.90 1.80 1.70 1.60 1.50 1.40 1.30 20.0 IG=1mA IG=5mA IG=10mA IG=20mA IG=40mA IG=100mA 15.0 10.0 5.0 1.20 1.10 1.00 0 20 40 60 80 100 120 0.0 140 0 0.5 Temp(C) Figure 7 – RDSON Temperature Coefficient 0.15 0.2 Figure 8 – On-Region Characteristics ID vs VDS, Schottky Diode of LD103SG6 at 25oRoom Temp 100 Id, Drain Current (A) 0 -5 ID(A) 0.1 Vds, Drain-to-Source Voltage (V) -10 -15 5µs 10 1ms 10ms DC Rdson Limit Thermal Limit Package Limit -20 -25 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 100µs Ig = 40mA Single Pulse Tc = 25°C 1 0.1 0.0 1 10 100 Vds, Drain-to-Source Voltage (V) VDS(V) Figure 9 – Schottky Diode Voltage vs Current Figure 10 – Safe Operating Area Total Power Dissipation (W) ZthJA = f(tp) (parameter D= tp/T) 1.E+00 60 D = 0.5 0.2 40 ZthJA (K/W) Ptot (W) 50 30 20 10 tp 0.02 T Note: 1. Duty Factor D = tp/T 2. Peak Tj = P(pk)*ZthJA + TA Single Pulse 0 25 50 75 100 125 150 Temperature (C) Figure 11 – Total Power Dissipation LD1106S P(pk) 0.05 0.01 0 4 0.1 1.E-01 175 1.E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 tp (s) Figure 12 – Normalized Thermal Response Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Ordering Information Product Number LD1106S PN Marking LD1106S Package TO252 (DPAK) Package and Marking Information DIMENSIONS DIM. A A1 A2 B B2 C C2 D D1 E E1 e G H L2 L4 R V2 mm. TYP. MIN. MAX. 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 5.40 6.20 5.10 6.40 6.60 4.70 2.28 4.40 4.60 9.35 10.10 0.80 0.60 1.00 0.20 0° 8° inch TYP. MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.212 0.201 0.252 0.185 0.090 0.173 0.368 0.031 0.023 0.008 0° MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 LD1106S xx.xx.xx 0.260 0.181 0.397 0.039 8° Life Support Policy LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status In definition or in Design Initial Production No Identification Needed In Production Definition This datasheet contains the design specifications for product development. Specifications may change without notice. This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S 5 Product Specification