PWRLITE LU1004D High Performance N-Ch Vertical POWERJFETTM with PN Diode Features Description The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DCDC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor “No Body Diode” provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution. Trench Power JFET with low threshold voltage Vth. Device fully “ON” with Vgs = 0.7V Optimum for “Low Side” Buck Converters Optimized for Secondary Rectification in isolated DC-DC Low Rg and low Cds for high speed switching No “Body Diode”; extremely low Cds Added Fast Recovery Schottky Diode in same package Applications DC-DC Converters Synchronous Rectifiers PC Motherboard Converters Step-down power supplies VRM Modules IPAK Pin Assignments D G S 1 2 3 Case TO251 (IPAK) N – Channel PowerJFET with PN Diode Pin Definitions Pin Number 1 2, 4 3 Pin Name Gate Drain Source Pin Function Description Gate. Transistor Gate Drain. Transistor Drain Source. Transistor Source VDS (V) 24V Product Summary Rdson (Ω) 0.0045 ID (A) 50 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Continuous Drain Current Pulsed Drain Current Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 Ω) Junction Temperature Storage Temperature Lead Soldering Temperature, 10 seconds Power Dissipation (Derated at 25°C) Symbol VDS VGS VGD ID ID EAS Ratings 24 -10 -28 50 100 220 Units V V V A A mJ TJ TSTG T PD -55 to 150°C -65 to 150°C 260°C 80 °C °C °C W LU1004D- Rev 0.97 12-04 Thermal Resistance Symbol RΘJA RΘJC Parameter Thermal Resistance Junction-to-Ambient Thermal Resistance Junction-to-Case IPAK Ratings 80 1.6 Units °C/W °C/W Electrical Specifications (TA = +25°C, unless otherwise noted.) The φ denotes a specification which apply over the full operating temperature range. Symbol Parameter Conditions Min. Static BVDSX Breakdown Voltage ID = 0.5 mA 24 Drain to Source VGS= -4 V BVGDO Breakdown Voltage IG = -50µA Gate to Drain BVGSO Breakdown Voltage IG = -1 mA Gate to Source RDS(ON) Static Drain to Source1 On IG = 40 mA, ID=10A Resistance (Current flows IG = 10 mA, ID=10A drain-to-source) See Fig. 1 IG = 5 mA, ID=10A VGS(TH) Gate Threshold Voltage VDS=0.1 V, ID=250µA Dynamic QG Total Gate Charge ∆VDrive =5V, ID=10A,VDS=15V QGD Gate to Drain Charge QGS Gate to Source Charge QSW Switching Charge RG Gate Resistance TD(ON) Turn-on Delay Time VDD=16V, ID=15A TR Rise Time VDrive = 5 V TD(OFF) Turn-off Delay Clamped Inductive Load T Fall Time F CISS COSS CGS CGD CDS Input Capacitance Output Capacitance Gate-Source Capacitance Gate-Drain Capacitance Drain-Source Capacitance PN Diode IR Reverse Leakage VF Forward Voltage VF Forward Voltage VF Forward Voltage Qrr Reverse Recovery Charge Notes: 1. Pulse width <= 500µs, duty cycle < = 2% 2 LU1004D VDS=10V, VGS= -5 V, 1MHz. VR=20V, Vgs = -4V IF = 1 A IF = 10 A IF = 20 A Is = 20 A di/dt = 100A/us, Typ. Max. Units V -28 V -12 -10 V 3.5 4.0 4.1 -900 4.0 4.5 mΩ mΩ mV 20 12 1.5 13.5 1 5 12 2 10 3000 900 2250 750 150 0.25 700 900 1100 20 nC nC nC nC Ω ns pF 0.3 mA mV mV mV nC Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) Total Gate Charge curves 2 0.0056 0.0054 0.0052 0.0050 0.0048 0.0046 0.0044 0.0042 0.0040 0.0038 0.0036 0.0034 0.0032 0.0030 Capacitive Charges Region 1 0 VGS(V) RDS(O hm s) RDS(ID=-10A) vs IG, at Room Temperature. -1 DC Charges Region -2 -3 -4 -5 0.001 0.010 0.100 0 1.000 10 20 IG(A) Figure 1 – RDSON vs Gate Current at ID – 10A Capacitance vs VDS, VGS=-4V at Room Temp 1.20E-03 3500 1.00E-03 3000 2500 8.00E-04 C(pF) Id(A) 1.40E-03 6.00E-04 Ciss Coss Crss 2000 1500 4.00E-04 1000 2.00E-04 500 0 0.00E+00 0 5 10 15 20 25 0 30 5 10 Vds(V) IG(A) 0.3 0.4 25 IG vs VGS, Drain Open Room Temp 1.E-01 9.E-02 8.E-02 7.E-02 6.E-02 5.E-02 4.E-02 3.E-02 2.E-02 1.E-02 0.E+00 0.2 20 Figure 4 – Capacitance vs Drain Voltage Vds IG vs VGS, Source and Drain Grounded. LD103SG6, at 25'C 0.1 15 VDSV) Figure 3 – Breakdown Voltage Vds vs Id IG(A) 50 40 Figure 2 – Total Gate Charge BVgs plot: Id vs Vds for Vgs=-4V 0.0 30 QtotG(nC) 0.5 VGS(V) Figure 5 – IG vs Gate Voltage VGS 0.6 0.7 0.8 5.0E-04 3.0E-04 1.0E-04 -1.0E-04 -3.0E-04 -5.0E-04 -7.0E-04 -9.0E-04 -1.1E-03 -1.3E-03 -14 -12 -10 -8 -6 -4 -2 0 2 VGSV) Figure 6 – Typical Gate Voltage Characteristic Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LU1004D Product Specification 3 Typical Operating Characteristics (TA = +25°C, unless otherwise noted.) Normalized Rdson vs Temp at ID=-20A 25.0 2.00 Id, Drain Current (A) Normalized Rdson 1.90 1.80 1.70 1.60 1.50 1.40 1.30 20.0 IG=1mA IG=5mA 15.0 IG=10mA IG=20mA 10.0 IG=40mA IG=100mA 5.0 1.20 1.10 1.00 0.0 0 20 40 60 80 100 120 140 0 0.025 Temp(C) Figure 7 – RDSON Temperature Coefficient 0.075 0.1 Figure 8 – On-Region Characteristics ID vs VDS, PN Diode At Room Temperature Ig = 40mA Single Pulse Tc = 25°C 100 Id, Drain Current (A) 0 -5 ID (A) 0.05 Vds, Drain-to-Source Voltage (V) -10 -15 10µs 100µs 10 1ms 10ms DC Rdson Limit Thermal Limit Package Limit -20 1 -25 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.1 0.0 1 Figure 10 – Safe Operating Area ZthJA = f(tp) (parameter D= tp/T) Total Pow er Dissipation (W) 1.E+00 100.00 D = 0.5 0.2 ZthJA (K/W) Ptot (W) 80.00 60.00 40.00 20.00 0.1 1.E-01 tp 0.02 T Note: 1. Duty Factor D = tp/T 2. Peak Tj = P(pk)*ZthJA + TA 0.01 Single Pulse 0 50 100 150 Te m pe rature (C) Figure 11 – Total Power Dissipation LU1004D P(pk) 0.05 0.00 4 100 Vds, Drain-to-Source Voltage (V) VDS(V) Figure 9 – Diode Voltage vs Current 10 200 1.E-02 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 tp (s) Figure 12 – Normalized Thermal Response Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com Product Specification Ordering Information PN Marking LU1004D Package TO251 (IPAK) Notes: This product is Pb-Free and has Tin Plated leads DIMENSIONS 0.222 IPAK L2 L 0.045 0.035 0.215 0.023 0.023 0.244 L1 C e A1 b b1 6.35 6.73 0.250 0.265 2.28 0.090 13.19 13.06 13.32 0.514 0.525 5.95 7.6 0.234 0.300 2.03 2.29 0.079 0.090 0.63 1.14 0.025 0.045 Back View D1 0.030 0.025 0.205 0.017 0.017 0.235 L3 H 5.64 1.14 0.90 5.46 0.60 0.60 6.22 LU1004D XXXXX XXXX L 0.76 0.64 5.20 0.45 0.45 5.97 C2 B2 mm. inch DIM. TYP. MIN. MAX. TYP. MIN. MAX. A 2.19 2.40 0.086 0.094 A1 0.89 1.14 0.035 0.045 b b1 B2 C C2 D D1 E e H L L1 L3 A E Package and Marking Information D Product Number LU1004D Life Support Policy LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein: 1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Preliminary Product Status In definition or in Design Initial Production No Identification Needed In Production Definition This datasheet contains the design specifications for product development. Specifications may change without notice. This datasheet contains preliminary data; additional and application data will be published at a later date. Lovoltech, Inc. reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Lovoltech reserves the right to make changes at any time without notice in order to improve the design. Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LU1004D Product Specification 5