April 2005 Preliminary ® www.lovoltech.com LVS2201N Dual N-Channel PowerJFET® Product Summary Features Typical Max 15.5 24 18 VDS RDS(ON) @ 0 VGS • Device is fully on @ VGS = 0V. • Bidirectional blocking when off (no body diode) V mΩ Applications Pinouts • Notebook battery switch: Each JFET replaces 2 P-Channel series MOSFETs D2 D2 D1 S2 D1 G2 S1 G1 SO-8 Absolute Maximum Ratings Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol Parameter VDSS VGS VDG ID Drain to Source voltage Gate to Source voltage Drain to Gate voltage Drain Current (note 1) TJ Junction Temperature TSTG Storage Temperature Lead Soldering Temperature 10 seconds, 1.6mm from case Power Dissipation (single operation) PD Conditions Rating Units 24 –12 –28 7.5 20 V V V A A –55 to 150 °C –65 to 150 260 °C °C TA = 25°C, note 1 1.6 W TA = 25°C, note 2 1.2 W Rating Units 78 105 40 °C/W °C/W °C/W Continuous, TC = 25°C Pulsed, 300µS Thermal Resistance Symbol Resistance from: Conditions RθJA Junction to Ambient note 1 note 2 RθJC Junction to Case Note 1. Mounted on 1 in.2, 2 oz copper on FR-4 Note 1. Mounted on 0.05 in.2, 0.5 oz. copper on FR-4 ©2005 Lovoltech Inc. REV. 0.8.0 04/14/05 LVS2201N ® Preliminary Electrical Specifications Symbol @TJ = 25°C (unless otherwise specified) Parameter Conditions BVDSX BVGDO BVGSO RDS(ON) Breakdown Voltage Drain to Source Breakdown Voltage Gate to Drain Breakdown Voltage Gate to Source Drain to Source On Resistance VGS(OFF) Gate Threshold Voltage ID = 0.5 mA, VGS= –4 V IG = –50µA IG = –50µA VGS = 0V, ID = –4A VGS = 0V, ID = 5A VDS = 16 V, ID = 250µA Min Typ Max Units 24 28 –32 –14 15.5 18 –2.5 –28 –12 18 22 V V V mΩ mΩ V Static Dynamic QG QGD QGS RG TD(ON) TD(OFF) TR TF CISS COSS CGS CGD CDS Total Gate Charge Gate to Drain charge Gate to Source Charge Gate resistance Turn-on Delay Turn-off Delay Rise Time Fall Time Input Capacitance Output Capacitance Gate-Source Capacitance Gate-Drain Capacitance Drain-Source Capacitance ∆VGS = 5V, VDS = 15V ∆VDS = 12V 6.9 4.5 2.4 3 4 9 2 7 640 260 437 202 11 ID=15A Circuit of Figure 1 nC nC nC Ω nS pF pF pF pF pF RL 15V 5V D.U.T. 2.2Ω ID D G S Figure 1. Switching test circuit. www.lovoltech.com 2 LVS2201N ® Preliminary Typical Characteristics @TJ = 25°C (unless otherwise specified) 19 1.3 Normalized RDS(ON) RDS (ON) 18 17 1.2 1.1 16 15 1 -7 -5 -3 -1 1 3 5 7 ID (A) 0 20 40 60 80 100 120 140 160 Die temperature (TJ) °C Figure 2. RDS(ON) vs. Drain Current @VGS = 0V Figure 3. Normalized RDS(ON) vs. junction temperature @ ID = –5A 4.5 4.0 Normalized RDS(ON) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 VGS Figure 4. Normalized RDS(ON) vs. @ ID = –5A www.lovoltech.com 3 LVS2201N ® Preliminary Dimensional Outline Drawing 8-lead narrow SOIC SO-8 Millimeters Min Max 1.35 1.75 0.10 0.20 0.35 0.51 0.19 0.25 4.80 5.00 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.50 0.93 0° 8° Dim A A1 B C D E e H h L q 8 7 6 Inches Min Max 0.0530 0.0690 0.0040 0.0080 0.0140 0.0200 0.0075 0.0100 0.1890 0.1960 0.1500 0.1570 0.050 BSC 0.2280 0.2440 0.0100 0.0200 0.0200 0.0370 0° 8° 5 E 1 2 3 Recommended minimum pad layout dimensions in inches (mm) H 4 h x 45° C 0.25 mm (Gage Plane) L q 0.101 mm 0.004" Conforms to JEDEC part number MS-012 www.lovoltech.com 4 LVS2201N ® Preliminary Ordering Information Part Number LVS2201N Package Packing SO-8 13” Tape and Reel, 2500 units / reel LIFE SUPPORT POLICY LOVOLTECH’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.lovoltech.com 5