PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTP3N55 TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage Drain – Gate Voltage Drain Current – Continuous Drain Current – Pulsed Gate – Source Voltage Power Dissipation Inductive Current Operating and Storage Temperature Lead Temperature From Case VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL ELECTRICAL CHARACTERISTICS TA @ 25°°C Parameters Symbol Test Conditions Drain Source BVDSS ID = .25mA Breakdown Voltage Gate Threshold Voltage VGS(th) ID = 1.0mA ID = 1.0mA, TJ = 100°C Gate – Body Leakage IGSS VGS = 20V Current Zero Gate Voltage IDSS VDS = 550V Drain Current VDS = 440V, T J = 125°C On State Drain Current ID(on) Drain Source On Resistance Forward Transconductance Drain-Source OnVoltage rDS(on) ID = 1.5A, VGS = 10V, gFS ID = 1.5A, VDS = 15V, VDS(on) ID = 3.0A VGS = 10V ID = 1.5A, VGS = 10V TJ = 100°C Drain Source OnVoltage Input Capacitance VDS(on) Output Capacitance Coss Reverse Transfer Capacitance Crss 550 550 3.0 10 ±20 75 Vdc Vdc Adc Adc Vdc Watts Adc °C °C -65 to +150 275 Min 550 2.0 1.5 Typ Max Unit Vdc 4.5 4.0 Vdc 100 nA 0.2 1.0 mA mA Adc 2.5 1.5 Ohms mhos 9.0 7.5 Vdc Vdc Vdc Ciss 1000 pF VDS = 25V, f = 1 MHz 300 pF 80 pF Page 1 of 2 TYPE:MTP3N55 Drain Source Diode Characteristics Forward On Voltage Reverse Recovery Time IS =3.0A Forward Turn-On Time Symbol VSD Min trr Typ 1.1 Max 165 ns ton Total Gate Charge VDS=440V, ID=3.0A, VDS=10V Gate – Source Charge Gate – Drain Charge Switching Characteristics ns Qg 16 Qgs 8.0 nC Qgd 8.0 nC Turn-On Time Symbol ton Turn-Off Time toff Delay Time (Turn On) VDD = 25V, ID = 1.5A Rgen = 50Ω Rise Time Delay Time (Turn Off) Fall Time Thermal Characteristics Junction To Case Junction To Ambient Internal Package Inductance Internal Drain Inductance Internal Source Inductance Units Vdc Min 18 Typ nC Max Units td(on) 50 ns tr 100 ns td(off) 180 ns tf 80 ns Symbol RθJC 1.67 Units °C/W RθJA 62.5 °C/W Symbol Ld Typ 3.5 Ls 7.5 Max Units nH nH Page 2 of 2