Transistors IC SMD Type N-Channel Logic Level PowerTrench MOSFET KDB7045L TO-263 Unit: mm 100 A, 30 V. RDS(ON) = 0.0045 RDS(ON) = 0.006 1 .2 7 -0+ 0.1.1 Features @ VGS = 10 V +0.1 1.27-0.1 +0.2 4.57-0.2 @ VGS = 4.5 V High performance trench technology for extremely low RDS(ON) 175 maximum junction temperature rating 5 .2 8 -0+ 0.2.2 need for an external Zener diode transient suppressor 0.1max +0.1 1.27-0.1 Rugged internal source-drain diode can eliminate the +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 elevated temperature 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 5 .6 0 Critical DC electrical parameters specified at +0.2 0.4-0.2 gate 11Gate drain 22Drain source 33Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to Source Voltage Parameter VDSS 30 V Gate to Source Voltage VGS 20 100 Drain Current Continuous ID Drain Current Pulsed Derate above 25 Operating and Storage Temperature A 75 300 Power dissipation @ TC=25 V PD 125 PD 0.85 TJ, TSTG -65 to 175 A W W/ Thermal Resistance Junction to Case R JC 1.2 /W Thermal Resistance Junction to Ambient R JA 62.5 /W www.kexin.com.cn 1 Transistors IC SMD Type KDB7045L Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 A Min Typ Max 30 V 22 A, Referenced to 25 Unit mV/ IDSS VDS = 24 V, VGS = 0 V Gate-Body Leakage, Forward IGSSF VGS = 20 V, VDS = 0 V 100 nA Gate-Body Leakage, Reverse IGSSR VGS = -20 V, VDS = 0 V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 3 V Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current ID = -250 RDS(on) ID(on) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1 A 1 1.5 -5 A, Referenced to 25 mV/ VGS = 10 V, ID = 50 A 0.0039 0.0045 VGS = 10 V, ID = 50 A, TJ = 125 0.0056 0.0070 VGS = 4.5 V, ID = 40 A 0.0048 0.0060 VGS = 10 V, VDS = 10 V VDS = 5 V, ID = 50 A VDS = 15 V, VGS = 0 V,f = 1.0 MHz A 50 m A 120 S 5400 pF 1170 pF 530 pF Turn-On Delay Time td(on) 14 30 ns Turn-On Rise Time tr 114 160 ns Turn-Off Delay Time td(off) 105 150 ns VDD = 15 V, ID = 50 A,VGS = 10 V, RGEN = 10 ,RGS=10 * Turn-Off Fall Time tf 115 160 ns Total Gate Charge Qg 50 70 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd Maximum Continuous Drain–Source Diode Forward Current * Drain-Source Diode Forward Voltage * Pulse Test: Pulse Width 2 Testconditons VGS = 0 V, ID = 250 www.kexin.com.cn 300 s, Duty Cycle VDS = 15 V, ID = 50 A,VGS = 5 V * 16 nC 16 nC IS VSD 2.0% VGS = 0 V, IS = 50 A * 0.95 75 A 1.2 V