ADVANCED DATA SHEET RMPA1852 Quad-Band GSM/EDGE PA Module Features Description ■ ■ ■ ■ ■ ■ ■ ■ This 7 x 7mm PAM is a 50Ω, quad-band dual mode, GSM/ EDGE PA module for 2.75G radio applications. In EDGE mode, the module supports High/Low power mode feature to maximize efficiency in low power operation. The module provides 50Ω input and output terminals. The module also includes closed loop power control circuitry for GSM applications, minimizing the required external components and maximizing board yields. Quad band, GSM/EDGE PA module 7.0 x 7.0 mm x 1.3 mm Package Size GSM Integrated Power Control Solution GSM High Efficiency – 55% GSM, 50% DCS/PCS EDGE mode – 29 dBm Output Power, 27% EDGE PAE Low current consumption for Pout<16 dBm in EDGE mode Shutdown/Standby Capability for Battery Operation 50Ω RF Inputs and Outputs Packaging Side View 1.30 Pin 1 Location 1.30 Typ. 0.25 1.25 1 8 2 9 0.75 0.50 0.50 3 7.00 Typ. 4 7.00 10 Top View Through Package 7.0 mm x 7.0 mm 11 5 12 6 13 7 14 0.50 0.50 0.75 1.25 0.25 7.00 Typ. 0.10 0.60 1.10 0.10 0.60 1.10 7.00 Pin 1 HB RF IN 1 8 HB RF OUT BAND SEL 2 9 GND TX EN 3 10 HB VCC3 VBATT 4 11 V_DET VMODE 5 12 LB VCC3 VRAMP 6 13 GND LB RF IN 7 14 LB RF OUT Package Footprint (top view through package) ©2005 Fairchild Semiconductor Corporation RMPA1852 Rev. C 1 www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module August 2005 ADVANCED DATA SHEET Parameter Value Units Supply Voltage (Vcc) 6 V Input Power 12 dBm Control Voltage (Vramp) 3.0 V TX EN 3.0 V BAND SEL 3.0 V Duty Cycle at Max Power 50 % Operating Temperature -30 to +85 °C Storage Temperature -55 to +150 °C Junction Temperature 150 °C Operating Parameters Parameter Test Conditions Min Typ Max Supply Voltage VBATT and VCC 3.0 3.5 5.2 V Supply Current VBATT and VCC, Tx Enable Low 20 µA 1.8 V Control Voltage Vramp “ON” — GSM Mode For Pout max, 5µA max. Control Voltage Vramp “OFF” — GSM Mode For Pout min, 5µA max. 0.2 1.6 GSM850/GSM900 0 Control Voltage Vramp in EDGE Mode Band Select Low Band Select High Unit V 1.6 V 0.8 V DCS/PCS 2.5 3.0 V VMODE Select Low GSM Mode ON 0 0.3 V VMODE Select High EDGE Mode ON 2.5 Band Select Current 20 3.0 V 50 µA Tx Enable Low PA Off 0 0.8 V Tx Enable High PA On 2.5 3.0 V 20 µA Tx Enable Current 2 RMPA1852 Rev. C www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module Absolute Maximum Ratings ADVANCED DATA SHEET Band: CEL Tx band (824–849 MHz) Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50Ω, Pin = 3 dBm, Temperature = 25°C, Duty Cycle = 25% Parameter Test Conditions Min Temp = 25°C, Vcc = 3.5 V Temp = 85°C, Vcc = 2.9 V 32.5 – – 0 +3 +6 At Pout max 50 55 – % Pout = 0 to 35 dBm – – 2.5:1 Ratio Frequency Output Power Input Power Range Power Added Efficiency Input VSWR Forward Isolation Power Control Range Stability 824 – 849 MHz 34.5 35 – dBm dBm – -35 – 40 – – -5 dBm Measured at DCS/PCS output. – – -20 dBm Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34 dBm into a 50Ω load. – – -36 dBm Ftx = 824–849, Frx = 869–894 MHz (RBW = 100 KHz) Ruggedness VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34.5 dBm into a 50Ω load. Mode: EDGE Unit Pin = 6 dBm Noise Power Output Power Switching Speed Max Vramp = 0.2 to 1.8 V Harmonics Cross Band Isolation @ 2fo Typ RF Pout 5–35 dBm to within 1 dB of final value. dBm – dB -83 dBm No Damage – – 2 µS Typ Max Unit Band: GSM850 Tx band (824–849 MHz) Modulation: EDGE modulation (3π/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement Parameter Test Conditions Min Duty Cycle 1/8 1/4 1/4 Output Power, Pout (H) Max Pi = -0.5 (Temp = 25°C, Vcc = 3.5 V) – 29.0 – Power Added Efficiency at Pout (H), (Temp = 25°C, Vcc = 3.5 V) – 27 – % Low power current consumption mode (L) Pout<16 dBm 200 mA at Pout (H) 36 dB Gain at Low power current consumption mode (L) Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness 25 – At Max Po (Temp = 25°C, Vcc = 3.5 V) dBm – VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 – 2.0:1 Ratio – -5 dBm No Damage Stability All Spurious (Load VSWR = 6:1 at all angles Pin < 8 dBm) Po < 29, – – -65 dBc TX Noise in RX Band Ftx = 824–849, Frx = 869–894 MHz (RBW = 100 KHz) – – -83 dBm Offset : ±200 KHz – – -33 dBc Offset : ±400 KHz – Offset: ±600 KHz – – -60 Load 50Ω – – 4 Adjacent Channel Leakage Error Vector Magnitude 3 RMPA1852 Rev. C -57 % www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module Electrical Specifications Mode: GMSK ADVANCED DATA SHEET Mode: GMSK Band: EGSM Tx band (880–915 MHz) Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50Ω, Pin = 3 dBm, Temperature = 25°C, Duty Cycle = 25% Parameter Test Conditions Min Temp = 25°C, Vcc = 3.5 V Temp = 85°C, Vcc = 2.9 V 32.5 – – 0 +3 +6 At Pout max 50 55 – % Pout = 0 to 35 dBm – – 2.5:1 Ratio Frequency Output Power Input Power Range Power Added Efficiency Input VSWR Forward Isolation Power Control Range Stability Noise Power Ruggedness 880 – 915 MHz 34.5 35 – dBm Unit dBm Pin = 6 dBm – -35 – 40 – – -5 dBm Measured at DCS/PCS output. – – -20 dBm Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34 dBm into a 50Ω load. – – -36 dBm Ftx = 890–915, Frx = 935–960 MHz (RBW = 100 KHz) – – -83 dBm Ftx = 880–890, Frx = 925–935 MHz (RBW = 100 KHz) – – -73 VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 34.5 dBm into a 50Ω load. Output Power Switching Speed Mode: EDGE Max Vramp = 0.2 to 1.8V Harmonics Cross Band Isolation @ 2fo Typ RF Pout 5–35 dBm to within 1 dB of final value. dBm – dB No Damage – – 2 µS Unit Band: GSM900 Tx band (880–915 MHz) Modulation: EDGE modulation (3π/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement Parameter Test Conditions Duty Cycle Output Power Min Typ Max 1/8 1/4 1/4 Max Pi = -0.5 (Temp = 25°C, Vcc = 3.5 V) – 29.0 – dBm Power Added Efficiency (Temp = 25°C, Vcc = 3.5 V) – 27 – % Low power current consumption mode (L) Pout<16 dBm 200 mA at Pout (H) 36 dB at Low power current consumption mode (L) 25 Gain Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band Adjacent Channel Leakage Error Vector Magnitude At Max Po (Temp = 25°C, Vcc = 3.5 V) – 2.0:1 Ratio – -5 dBm VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 No Damage All Spurious (Load VSWR = 6:1 at all angles Po < 29, Pin < 8 dBm) – – -65 dBc Ftx = 890–915, Frx = 935–960 MHz – – -83 dBm Ftx = 880–890, Frx = 925–935 MHz (RBW = 100 KHz) – – -73 Offset: ±200 KHz – – -33 Offset: ±400 KHz – Offset: ±600 KHz – – -60 Load 50Ω – – 4 4 RMPA1852 Rev. C – – dBc -57 % www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module Electrical Specifications (Continued) ADVANCED DATA SHEET Mode: GMSK Band: DCS Tx band (1710–1785 MHz) Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50Ω, Pin = 3 dBm, Temperature = 25°C, Duty Cycle = 25% Parameter Frequency Output Power Test Conditions Min Input VSWR Forward Isolation Power Control Range Max Unit DCS 1710 – 1785 MHz Temp = 25°C, Vcc = 3.5 V 32 33 – dBm Temp = 85°C, Vcc = 2.9 V 29.5 – – +0 +3 +6 At Pout max 45 50 – % Pout = 0 to 35 dBm – – 2.5:1 Ratio Pin = 6 dBm – -35 Vramp = 0.2 to 1.8 V – 40 Input Power Range Power Added Efficiency Typ Harmonics dBm dBm – dB – – -5 dBm Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50Ω load. – – -36 dBm Noise Power Ftx = 1710–1785, Frx = 1805–1880 MHz (RBW = 100 KHz) – – -77 dBm Ruggedness Output VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50Ω load. Stability Output Power Switching Speed Mode: EDGE RF Pout 5–35 dBm to within 1 dB of final value. No Damage – – 2 µS Band: DCS Tx band (1710–1785 MHz) Modulation: EDGE modulation (3π/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement Parameter Test Conditions Duty Cycle Min Typ Max Unit 1/8 1/4 1/4 Max Pi = -0.5 (Temp = 25°C, Vcc = 3.5 V) – 28 – Power Added Efficiency (Temp = 25°C, Vcc = 3.5 V) – 26 – % Low power current consumption mode (L) Pout<16 dBm 200 mA at Pout (H) 34 dB Output Power Gain at Low power current consumption mode (L) Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band Adjacent Channel Leakage Error Vector Magnitude – VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 – 2.0:1 Ratio – -10 dBm No Damage All Spurious (Load VSWR = 6:1 at all angles Po < 28, Pin < 8 dBm) – – -65 dBc Ftx = 1710–1785, Frx = 1805–1880 MHz (RBW = 100 KHz) – – -77 dBm Offset: ±200 KHz – – -33 dBc Offset: ±400 KHz – Offset: ±600 KHz – – -60 Load 50Ω – – 4 5 RMPA1852 Rev. C 25 – At Max Po (Temp = 25°C, Vcc = 3.5 V) dBm -57 % www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module Electrical Specifications (Continued) ADVANCED DATA SHEET Band: PCS Tx band (1850–1910 MHz) Modulation: None (CW), Typical Peak/Average = 0dB Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Test conditions unless otherwise stated: Vcc = 3.5V, Vramp = Vramp Max., Zin = Zout = 50Ω, Pin = 3 dBm, Temperature = 25°C, Duty Cycle = 25% Parameter Frequency Output Power Test Conditions Min Input VSWR Forward Isolation Power Control Range Max Unit PCS 1850 – 1910 MHz Temp = 25°C, Vcc = 3.5 V 32 33 – dBm Temp = 85°C, Vcc = 2.9 V 29.5 – – +0 +3 +6 At Pout max 45 50 – % Pout = 0 to 35 dBm – – 2.5:1 Ratio Pin = 6 dBm – -35 Vramp = 0.2 to 1.8 V – 40 Input Power Range Power Added Efficiency Typ Harmonics dBm dBm – dB – – -5 dBm Load 6:1, all phase angles, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50Ω load. – – -36 dBm Noise Power Ftx = 1710–1785, Frx = 1805–1880 MHz(RBW = 100 KHz) – – -77 dBm Ruggedness Output VSWR = 10:1, All phase angles, Vcc = 4.8 V, Pin = 3 dBm, Set Vramp where Pout less than or equal to 32 dBm into a 50Ω load. Stability Output Power Switching Speed Mode: EDGE RF Pout 5–35 dBm to within 1 dB of final value. No Damage – – 2 µS Unit Band: PCS Tx band (1850–1910 MHz) Modulation: EDGE modulation (3π/8 O-8PSK at 270.833 ksps), Max Peak/Avg = 3.3dB (Probability < 0.1%). Pulse Rate: TX = 577µs, 25% duty cycle, Tframe = 4.615mS Input Power: Adjust to meet Output Power Requirement Parameter Test Conditions Duty Cycle Output Power Min Typ Max 1/8 1/4 1/4 Max Pi = -0.5 (Temp = 25°C, Vcc = 3.5 V) – 28 – dBm Power Added Efficiency (Temp = 25°C, Vcc = 3.5 V) – 26 – % Low power current consumption mode (L) Pout<16 dBm 200 mA at Pout (H) 34 dB at Low power current consumption mode (L) 25 Gain Input VSWR Harmonics 2Fo Thru 5Fo Ruggedness Stability TX Noise in RX Band Adjacent Channel Leakage Error Vector Magnitude At Max Po (Temp = 25°C, Vcc = 3.5 V) – 2.0:1 Ratio – -5 dBm VSWR = 10:1, All phase angles, Vcc = 4.8 V, Max Pin = 8 No Damage All Spurious (Load VSWR = 6:1 at all angles Po < 28, Pin < 8 dBm) – – -65 dBc Ftx = 1850–1910, Frx = 1930–1990 MHz (RBW = 100 KHz) – – -77 dBm Offset: ±200 KHz – – -33 dBc Offset: ±400 KHz – Offset: ±600 KHz – – -60 Load 50Ω – – 4 6 RMPA1852 Rev. C – – -57 % www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module Electrical Specifications (Continued) Mode: GMSK ADVANCED DATA SHEET Section Signal RF Supply Control Pin(s) Description LB RF IN 7 RF Input (Low Bands), DC Blocked within the part. HB RF IN 1 RF Input (High Bands), DC Blocked within the part. LB RF OUT 14 RF Output (Low Bands), DC Blocked within the part. HB RF OUT 8 RF Output (High Bands), DC Blocked within the part. VBATT 4 DC Supply for the Pre-Driver & Driver Stage of the PA’s LB VCC3 12 DC Supply for Final Stage (Low Bands) HB VCC3 10 DC Supply for Final Stage (High Bands) BAND_SEL TX EN VMODE 2 Band Selection logic pin. A logic low selects the low band PA, and logic high selects the high band PA. 3 PA enable line. A logic high enables the selected PA operation 5 This pin selects either GMSK or 8PSK operation for the PA’s. A logic low selects GMSK mode. A logic high selects 8PSK mode. 6 In GMSK mode, the voltage on this pin controls the output power of the selected PA. In 8PSK mode, the voltage on this pin is a digital voltage selecting the normal or low power mode. VRAMP Power Detection V_DET Ground GND 11 9, 13 Power Detector output voltage in EDGE mode Ground DC Control Requirements DC Control Description Supplies Specification Signal VBATT Control Min Typ Max Unit 3.0 3.5 4.3 V Conditions Not Charging, RF On LB VCC3 3.0 3.5 4.3 V Not Charging, RF On HB VCC3 3.0 3.5 4.3 V Not Charging, RF On BAND SEL TX EN VMODE VRAMP (EDGE only) 0 – 0.1 V Band Select LOW 2.5 – 2.85 V Band Select HIGH 2.5 – 2.85 V Enabled 0.0 – 0.1 V Disabled 2.5 – 2.85 V Enabled (EDGE Mode) 0.0 – 0.1 V Disabled (GSM Mode) 2.5 2.85 V Normal EDGE operation 0 0.1 V Low power EDGE operation External Components Type Value Size Description Pin Cap 2.2 nF 0402 Vramp bypass 6 Cap 2.2 µF, 33 pF 0402 HB VCC3 bypass 10 Cap 2.2 µF, 33 pF 0402 LB VCC3 bypass 12 7 RMPA1852 Rev. C www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module I/O Pin Description ADVANCED DATA SHEET Pout, PAE% vs. Vramp, GSM Mode 40 80.00% 30 70.00% 20 60.00% Pout (dBm) 50.00% 0 GSM Efficiency 40.00% -10 GSM DCS Efficiency 30.00% Efficiency (%) 10 -20 20.00% DCS/PCS -30 10.00% -40 -50 0.00% 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSet (Volts) EDGE Mode PAE (Pout = 29 dBm, Pin = -12 dBm, Vcc = 3.5 V) 30.0 28.0 PAE (%) PAE (%) 26.0 24.0 22.0 20.0 800 820 840 860 Freq (MHz) 8 RMPA1852 Rev. C 880 900 920 www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module Closed Loop Power Control Data ADVANCED DATA SHEET Parameter Limits Detector Voltage (VDET) Condition Min 45 Typ Max Units 50 55 mV Case #1 No RF Applied Case #2 Pout = 0 dBm 0.1 V Case #3 Pout = 29 dBm 1 V VDET vs. Power Output (EDGE MODE) Po vs. Vdet 1.2 Vdet. (V) 1.0 0.8 0.6 0.4 0.2 0 -5 0 5 10 20 15 25 30 35 Po (dBm) Dual Mode Operation Input Mode of Operation Band VRAMP VMODE Band_Set GMSK Low Band Analog GMSK High Band Analog 8-PSK (Low Current) Low Band 0 8-PSK (High Current) Low Band 1 8-PSK (Low Current) High Band 0 8-PSK (High Current) High Band 1 0 Output Power 0 0 to 34.5 dBm (Vramp = 0.2 to 1.6V) 0 1 0 to 32 dBm (Vramp = 0.2 to 1.6V) 1 0 0 dBm to TBD dBm 1 0 TBD dBm to 29 dBm 1 1 0 dBm to TBD dBm 1 1 TBD dBm to 28 dBm Power On Sequence GMSK Power On Sequence EDGE Power on Sequence Apply VCC3 and VBATT Apply VCC3 and VBATT Apply Band Select Apply Band Select VMODE (Low) VMODE (High) Apply RF Apply RF Apply TX EN & VRAMP in unison Apply TX EN Set Vramp (Higyh or Low) 9 RMPA1852 Rev. C www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module RF Detector (EDGE MODE) ADVANCED DATA SHEET RMPA1852 Quad-Band GSM/EDGE PA Module The Power Down sequence is in reverse order to the Power On Sequence. (3.0V to 4.2V) VBATT 2.8V TX EN VRAMP starts 1µs after TX EN 0.2 to 1.6V VRAMP settles at 0.2V 1µs before TX EN goes low VRAMP 10 RMPA1852 Rev. C www.fairchildsemi.com ADVANCED DATA SHEET The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. Around the world.™ The Power Franchise Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench QFET QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic TINYOPTO™ TruTranslation™ UHC™ UltraFET UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 11 RMPA1852 Rev. C www.fairchildsemi.com RMPA1852 Quad-Band GSM/EDGE PA Module TRADEMARKS