OM6516SC OM6520SC INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 25 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available With Free Wheeling Diode Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3Ø motors, UPS and high power SMPS. MAXIMUM RATINGS @ 25°C Unless Specified Otherwise PART NUMBER OM6516SC OM6520SC IC (Cont.) @ 90°C, A 25 25 V(BR)CES V 1000 1000 VCE (sat) (Typ.) V 4.0 4.0 Tf (Typ.) ns 300 300 SCHEMATICS Collector PD W 125 125 qJC °C/W 1.0 1.0 TJ °C 150 150 MECHANICAL OUTLINE Collector .270 .240 .695 .685 .165 .155 .045 .035 .835 .815 .707 .697 Gate Gate 1 C 2 E 3 G .550 .530 .092 MAX. Emitter .750 .500 Emitter OM6516SC OM6520SC(w/Diode) .005 .065 .055 .200 TYP. .140 TYP. PACKAGE OPTIONS NOTE: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 6 PIN SIP MOD PAK 4 11 R2 Supersedes 2 07 R1 3.1 - 155 3.1 PRELIMINARY DATA: OM6520SC IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 1000 V(BR)CES Collector Emitter 1000 V Breakdown Voltage ICES VCE = 0 IC = 250 µA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 ±100 nA VGE = ±20 V V Breakdown Voltage ICES Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 ±100 nA VGE = ±20 V TC = 125°C IGES Gate Emitter Leakage Current VGE(th) Gate Threshold Voltage 4.5 6.5 3.0 VCE = VGE, IC = 1 mA VGE(th) V VGE = 15 V, IC = 15 A VCE(sat) Collector Emitter TC = 25°C VCE(sat) Collector Emitter 4.0 4.5 V Saturation Voltage Input Capacitance Coes Cres VCE = 0 V VGE = 15 V, IC = 15 A Gate Threshold Voltage 4.5 6.5 3.0 V V Saturation Voltage VCE = VGE, IC = 1 mA VGE = 15 V, IC = 15 A TC = 25°C VCE(sat) Collector Emitter TC = 125°C Dynamic Cies Current V Saturation Voltage Forward Transductance Gate Emitter Leakage Parameter - ON VCE(sat) Collector Emitter gfs TC = 125°C IGES VCE = 0 V Parameter - ON VCE = 0 IC = 250 µA 4.0 4.5 V Saturation Voltage VGE = 15 V, IC = 15 A TC = 125°C Dynamic S VCE = 20 V, IC = 15 A gfs Forward Transductance 2000 pF VGE = 0 Cies Input Capacitance 2000 pF VGE = 0 Output Capacitance 160 pF VCE = 25 V Coes Output Capacitance 160 pF VCE = 25 V Reverse Transfer Capacitance 65 pF f = 1 mHz Cres Reverse Transfer Capacitance 65 pF f = 1 mHz 5.5 Switching-Resistive Load 5.5 S VCE = 20 V, IC = 15 A Switching-Resistive Load Td(on) Turn-On Time 50 nS VCC = 600 V, IC = 15 A Td(on) Turn-On Time 50 nS VCC = 600 V, IC = 15 A tr Rise Time 200 nS VGE = 15 V, Rg = 3.3 , tr Rise Time 200 nS VGE = 15 V, Rg = 3.3 , Td(off) Turn-Off Delay Time 200 nS Tj = 125°C Td(off) Turn-Off Delay Time 200 nS Tj = 125°C tf Fall Time 300 nS tf Fall Time 300 nS Switching-Inductive Load Switching-Inductive Load Td(off) Turn-Off Delay Time 200 nS VCEclamp = 600 V, IC = 15 A Td(off) Turn-Off Delay Time 200 nS VCEclamp = 600 V, IC = 15 A tf Fall Time 200 nS VGE = 15 V, Rg = 3.3 tf Fall Time 200 nS VGE = 15 V, Rg = 3.3 Eoff Turn-Off Losses 1.5 Eoff Turn-Off Losses 1.5 mWs L = 1 mH, Tj = 125°C mWs L = 1 mH, Tj = 125°C DIODE CHARACTERISTICS Vf Ir trr Maximum Forward Voltage Maximum Reverse Current Reverse Recovery Time 1.85 V IF = 30 A, TC = 25°C 1.70 V IF = 30 A, TC = 150°C 500 µA VR = 1000 V, TC = 25°C 7.0 mA VR = 800 V, TC = 125°C 50 nS IF = 1 A, di / dt = -15 A µ/S VR = 30 V, Tj = 25°C Note 1: Limited by diode Ir characteristic. OM6516SC OM6520SC 3.1 PRELIMINARY DATA: OM6516SC