OM1N100SA OM5N100SA OM1N100ST OM3N100SA OM6N100SA OM3N100ST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching Low RDS(on) Available Screened To MIL-19500, TX, TXV And S Ceramic Feedthroughs Also Available DESCRIPTION This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. MAXIMUM RATINGS PART NUMBER OM1N100SA OM3N100SA OM5N100SA OM6N100SA OM3N100ST OM1N100ST RDS(on) 8.0 5.2 3.0 2.0 5.4 8.2 SCHEMATIC ID 1.0A 3.5A 5.0A 6.0A 3.5A 1.0A 3.1 PIN CONNECTION TO-254AA DRAIN TO-257AA GATE 1 2 3 SOURCE 4 11 R1 Supersedes 2 05 R0 3.1 - 15 Pin 1: Drain Pin 2: Source Pin 3: Gate 1 2 3 STATIC P/N OM1N100SA TC = 25° unless otherwise noted ELECTRICAL CHARACTERISTICS: STATIC P/N OM3N100SA (See Note 3) TC = 25° unless otherwise noted (See Note 3) Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 1000 BVDSS Drain-Source Breakdown 1000 V Voltage ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 IGSSR Gate-Body Leakage Reverse -100 Zero Gate Voltage 0.25 Drain Current 1.0 IDSS VGS = 0, 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage ID = 250 mA VDS = VGS, ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 nA VGS = 20 V, VDS = 0 IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V nA VGS = - 20 V, VDS = 0 IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V mA VDS = Max. Rat., VGS = 0 IDSS Zero Gate Voltage Drain 0.25 mA VDS = Max. Rat., VGS = 0 mA VDS = 0.8 x Max. Rat., Current 1.0 mA VDS = 0.8 x Max. Rat., VGS = 0, TC = 125° C ID(on) On-State Drain Current 1.0 A VGS = 0, TC = 125° C VDS > ID(on) x RDS(on) Max. ID(on) On-State Drain Current 3.5 A VGS = 10 V RDS(on) Static Drain-Source On-State Resisitance1, 3 RDS(on) Static Drain-Source On-State Resistance1, 3 VGS = 10 V SA 8.0 VGS = 10 V RDS(on) Static Drain-Source On-State ST 8.2 ID =.5A SA 15.0 VGS = 10 V ST 15.4 ID =.5A, TC = 100° C 3.1 - 16 Forward Transductance Ciss Input Capacitance Coss SA Resistance1, 3 RDS(on) Static Drain-Source On-State Resistance1, 3 DYNAMIC gfs VDS > ID(on) x RDS(on) Max 5.2 VGS = 10 V ST 5.4 ID =.5A SA 10.0 VGS = 10 V ST 10.4 ID =.5A, TC = 100° C DYNAMIC S VDS = 10V, ID = 1 A gfs Forward Transductance S VDS = 10, ID = 1.5 A 950 pF VGS = 0 Ciss Input Capacitance 950 pF VGS = 0 Output Capacitance 110 pF VDS = 25 V Coss Output Capacitance 110 pF VDS = 25 V Crss Reverse Transfer Capacitance 40 pF f = 1 MHz Crss Reverse Transfer Capacitance 40 pF f = 1 MHz Td(on) Turn-On Delay Time 90 ns Td(on) Turn-On Delay Time 90 ns tr Rise Time 90 ns tr Rise Time 90 ns Td(off) Turn-Off Delay Time 115 ns VDD = 600 V, ID = 3.5 Td(off) Turn-Off Delay Time 115 ns VDD = 600 V, ID = 3.5 ns RG = 50W, VGS = 10 V tf Fall Time 75 ns RG = 50W, VGS = 10 V tf Fall Time 1.0 75 BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current 3.5 A (Body Diode) ISM Diode Forward Voltage2 trr Reverse Recovery Time D IS Continuous Source Current G the integral P-N 2.5 V TC = 25 C, IS = 3.5 A, VGS = 0 VSD Diode Forward Voltage2 ns IF = IS, VDD = 100 V trr Reverse Recovery Time Junction rectifier. ISM D G A the integral P-N 2.5 V TC = 25 C, IS = 3.5 A, VGS = 0 ns IF = IS, VDD = 100 V (Body Diode) S Modified MOSPOWER 14 Junction rectifier. 900 dlF/ds = 100 A/ms, TJ = 150 C 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3 OM1N100ST - All characteristics the same except RDS(on) A symbol showing Source Current1 A 900 3.5 (Body Diode) 14 (Body Diode) VSD BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current1 1.0 S dlF/ds = 100 A/ms, TJ = 150 C 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3 OM3N100ST - All characteristics the same except RDS(on) OM1N100SA/ST Series 3.1 ELECTRICAL CHARACTERISTICS: ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OM5N100SA (See Note 3) ELECTRICAL CHARACTERISTICS: TC = 25° unless otherwise noted STATIC P/N OM6N100SA (See Note 3) Parameter Min. Typ. Max. Units Test Conditions Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-Source Breakdown 1000 BVDSS Drain-Source Breakdown 1000 V Voltage VGS = 0, ID = 250 mA VGS(th) Gate-Threshold Voltage IGSSF Gate-Body Leakage Forward 100 nA IGSSR Gate-Body Leakage Reverse -100 nA Zero Gate Voltage 0.25 mA VDS = Max. Rat., VGS = 0 IDSS Drain Current 1.0 mA VDS = 0.8 x Max. Rat., IDSS 2.0 4.0 V V VGS = 0, V VDS = VGS, ID = 250 mA Voltage VDS = VGS, ID = 250 mA ID = 250 mA VGS(th) Gate-Threshold Voltage 2.0 4.0 VGS = 20 V, VDS = 0 IGSSF Gate-Body Leakage Forward 100 nA VGS = 20 V, VDS = 0 VGS = - 20 V, VDS = 0 IGSSR Gate-Body Leakage Reverse - 100 nA VGS = - 20 V, VDS = 0 Zero Gate Voltage Drain 0.25 mA VDS = Max. Rat., VGS = 0 Current 1.0 mA VDS = 0.8 x Max. Rat., VGS = 0, TC = 125° C ID(on) On-State Drain Current 5.0 A VGS = 0, TC = 125° C VDS > ID(on) x RDS(on)Max., ID(on) On-State Drain Current 6.0 A VGS = 10 V RDS(on) Static Drain-Source On-State VGS = 10 V 3.0 VGS = 10 V, ID = 2.5 A RDS(on) Static Drain-Source On-State 6.0 VGS = 10 V, ID = 2.5 A RDS(on) Static Drain-Source On-State Resisitance1 Resistance1 3.1 - 17 Ciss Input Capacitance VGS = 10 V, ID = 3.0 A 4.0 VGS = 10 V, ID = 3.0 A Resistance1 TC = 100 C DYNAMIC Forward Transductance 2.0 Resistance1 RDS(on) Static Drain-Source On-State gfs VDS > ID(on) x RDS(on)Max., TC = 100° C DYNAMIC 4.0 2600 S VDS = 25 VDS(on), ID = 2.5 A gfs Forward Transductance pF VGS = 0 Ciss Input Capacitance 4.0 2600 S VDS = 25V, ID = 3.0 A pF VGS = 0 Coss Output Capacitance 350 pF VDS = 25 V Coss Output Capacitance 350 pF VDS = 25 V Crss Reverse Transfer Capacitance 150 pF f = 1 MHz Crss Reverse Transfer Capacitance 150 pF f = 1 MHz Td(on) Turn-On Delay Time 65 ns Td(on) Turn-On Delay Time 65 ns tr Rise Time 55 ns tr Rise Time 55 ns Tr(Voff) Off-Voltage Rise Time 62 ns VDD = 800 V, ID =6A Tr(Voff) Off-Voltage Rise Time 62 ns VDD = 800 V, ID = 6A tf 25 ns RG = 7W, VGS = 10 V tf 25 ns RG = 7W, VGS = 10 V Fall Time BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS IS Continuous Source Current 6 A (Body Diode) ISM 24 A Diode Forward Voltage1 trr Reverse Recovery Time D IS the integral P-N 1100 G ISM A S VSD Diode Forward Voltage1 ns IF = IS,VDD = 100 V trr Reverse Recovery Time dlF/ds = 100 A/ms 24 A (Body Diode) TC = 25 C, IS = 6 A, VGS = 0 Modified MOSPOWER D symbol showing Source Current2 V 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package 6 (Body Diode) Junction rectifier. 2.5 Continuous Source Current the integral P-N G Junction rectifier. 2.5 1000 S V TC = 25 C, IS = 6 A, VGS = 0 ns IF = IS,VDD = 100 V dlF/ds = 100 A/ms, TJ = 150 C 1 Pulse Test: Pulse Width 300msec, Duty Cycle 1.5%. 2 Pulse Width limited by safe operating area. 3. Also available in a TO258AA, TO259AA and dual 6 pin Sip, S-6 package 3.1 OM1N100SA/ST Series (Body Diode) VSD BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS Modified MOSPOWER symbol showing Source Current2 Fall Time OM1N100SA/ST Series ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter OM1N100SA OM3N100SA OM5N100SA OM6N100SA Units OM1N100ST OM3N100ST IAR Avalanche Current (Repetitive or Non-Repetitive) Tj = 25°C 3.5 Tj = 100°C EAS Single Pulse Avalanche Energy 3.5 6 6 A 2 2 3.4 3.4 A 130 130 850 850 mJ 6 6 16 16 mJ Starting Tj = 25°C, ID = IAR, VDD = 25V Repetitive Avalanche Energy EAR (Pulse width limited by TJ max, d < 1%) VDS Drain-Source Voltage 1000 1000 1000 1000 V VDGR Drain-Source Voltage (RGS = 20k ) 1000 1000 1000 1000 V ID @ TC = 25°C Continuous Drain Current .50 3.5 5.0 6.0 A ID @ TC = 100°C Continuous Drain Current .30 2.0 3.1 3.7 A IDM Pulsed Drain Current1 14 14 24 24 A VGS Gate-Source Voltage ±20 ±20 ±20 ±20 V PD @ TC = 25°C Maximum Power Dissipation 90 90 130 130 W PD @ TC =100°C Maximum Power Dissipation 32 32 51 51 W Junction-To-Case Linear Derating Factor .87 .87 2.10 2.10 W/°C Junction-To-Ambient Linear Derating Factor .020 .020 .020 .020 W/°C TJ Operating and Tstg Storage Temperature Range -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Lead Temperature (1/16" from case for 10secs.) 300 300 300 300 °C 1.15 1.15 .48 .48 °C/W 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 2%. THERMAL RESISTANCE 3.1 RthJC Junction-To-Case Max. MECHANICAL OUTLINE TO-257AA TO-254AA .200 .190 .420 .410 .050 .040 .045 .035 .665 .645 .150 .140 .545 .535 .144 DIA. .537 .527 .685 .665 .800 .790 .550 .530 .430 .410 .038 MAX. .750 .500 .550 .510 .005 .005 .045 .035 .150 TYP. .260 .249 .150 TYP. .100 TYP. .035 .025 .120 TYP. PACKAGE OPTIONS FET 4 FET 3 G SDGSD D SGGS D D S G G S D FET 1 FET 1 Z-TAB FET 3 FET 2 6 PIN SIP MOD PAK Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information. 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246