9 Micron Metal Gate CMOS Process Process parameters Table 1: Features • Metal Gate Process • 13 µm Metal Pitch 9 µm Units • 16 Volts Maximum Operating Voltage Metal pitch (width/space) 8/5 µm • Simple Process (7 masks) Contact 8x8 µm • Very Short Cycle Time Gate geometry 9 µm • Very High Yield P-well junction depth 9 µm Description N+ junction depth 2.4 µm P+ junction depth 2.6 µm 1050 Å The 9 µm process is a CMOS process with an operating voltage range from 5 to 16 volts. The gate material is metal; which is common in many mature designs. An advantage of this process is its simplicity and its short cycle time. Gate oxide thickness MOSFET Electrical Parameters Resistances (Ω /sq.) 9 MICRON - 15 volts Units Vt (50 x 9 µm) N Channel min. typ. max. min. 1.0 1.6 Ids (50 x 9 µm) 1.6 200 Gain β (50 x 9 µm) Bvdss 1.3 20 28 P Channel typ. max. 1.9 60 700 20 2.2 min. V saturation µA/µm Vds=Vgs=3v Pwell typ. max. 1500 N+ 35 45 55 P+ 40 70 100 2 200 µA/V 30 V Ids=1µA Field threshold 23 20 V Ids=1µA L effective 5.2 4.8 µm L drawn = 9µm www.dalsasemi.com 9 MICRON -15 volts Conditions For More Information: DALSA Semiconductor Sales 18 Boulevard de l’Aéroport Bromont, Québec, Canada J2L 1S7 Metal I 0.038 Tel : Fax email: (450) 534-2321 ext. 1448 (800) 718-9701 (450) 534-3201 [email protected]