Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-41400 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.5 dB Typical at 2.0␣ GHz 10.5 dB Typical at 4.0␣ GHz • High Gain-Bandwidth Product: 9.0 GHz Typical fT Description Hewlett-Packard’s AT-41400 is a general purpose NPN bipolar transistor chip that offers excellent high frequency performance. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50␣ Ω at 1 GHz , makes this device easy to use as a low noise amplifier. Chip Outline The AT-41400 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 4-99 5965-8922E AT-41400 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Units V V V mA mW °C °C Part Number Ordering Information Part Number Devices Per Tray AT-41400-GP4 100 Thermal Resistance [2,4]: θjc = 95°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMOUNTING SURFACE = 25°C. 3. Derate at 10.5 mW/°C for TMOUNTING SURFACE > 153°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Note: For more information, see “Tape and Reel Packaging for Semiconductor Devices”. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] Units Min. Typ. Max. |S21E|2 Insertion Power Gain; VCE = 8 V, IC = 25 mA f = 2.0 GHz f = 4.0 GHz dB 12.0 6.5 P1 dB f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz dBm G1 dB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA 19.0 18.5 15.0 10.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA dB GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz fT Gain Bandwidth Product: VCE = 8 V, IC = 25 mA hFE ICBO IEBO CCB Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz Notes: 1. RF performance is determined by packaging and testing 10 devices per wafer. 2. For this test, the emitter is grounded. 4-100 dB 1.3 1.6 3.0 18.5 14.5 10.5 dB GHz — µA µA pF 9.0 30 150 0.17 300 0.2 1.0 AT-41400 Typical Performance, TA = 25°C 15 GA 18 14 8 9 6 6 4 NF50 Ω 3 NFO 0 0.5 1.0 2.0 2 GAIN (dB) 12 13 4 4V 6V 10 V 3 2 NFO 2.0 GHz GA 10 4.0 GHz 8 4.0 GHz 10 20 30 2.0 GHz 0 10 IC (mA) 20 30 IC (mA) 20 35 MSG P1dB 2.0 GHz 12 GA (dB) 25 16 20 15 |S21E|2 4.0 GHz 8 MAG 10 G1dB 1.0 GHz 16 30 |S21E|2 GAIN (dB) 2.0 GHz 4.0 GHz 40 Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. 40 20 11 2.0 GHz 8 4.0 GHz 4 5 4 0 0 10 20 30 40 IC (mA) Figure 4. Output Power and 1 dB Compressed Gain vs. Collector Current. VCE = 8 V. 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. 4-101 2 0 40 Figure 2. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 24 6 4 NFO 1 0 FREQUENCY (GHz) P1 dB (dBm) 12 12 0 3.0 4.0 5.0 Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. G1 dB (dB) 4V GA NF (dB) GAIN (dB) 15 14 GAIN (dB) 21 16 10 V 6V 0 0 10 20 30 40 IC (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. NFO (dB) 16 NFO (dB) 24 AT-41400 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .73 -39 28.3 25.84 159 0.5 .60 -121 22.2 12.91 113 1.0 .57 -156 17.2 7.27 94 1.5 .56 -172 13.7 4.84 84 2.0 .57 176 11.4 3.71 77 2.5 .57 170 9.5 2.97 71 3.0 .60 164 8.0 2.52 64 3.5 .60 157 6.8 2.18 61 4.0 .61 152 5.5 1.89 55 4.5 .63 147 4.7 1.72 51 5.0 .63 144 3.7 1.53 46 5.5 .65 139 3.1 1.42 42 6.0 66 136 2.1 1.28 38 dB -39.2 -30.2 -28.0 -26.4 -24.9 -23.6 -22.3 -20.9 -20.1 -18.7 -17.8 -17.0 -16.1 S12 Mag. .011 .031 .040 .048 .057 .066 .077 .090 .099 .116 .129 .141 .156 Ang. 75 48 51 59 66 69 72 77 79 81 80 82 83 Mag. .94 .61 .50 .47 .46 .46 .45 .47 .47 .47 .48 .49 .50 S22 dB -40.9 -32.8 -29.6 -26.9 -24.7 -23.1 -21.6 -20.4 -19.3 -18.1 -17.3 -16.5 -15.7 S12 Mag. .009 .023 .033 .045 .058 .070 .083 .096 .108 .124 .136 .150 .165 Ang. 69 56 65 72 75 78 79 82 83 84 83 85 84 Mag. .87 .49 .42 .41 .41 .40 .40 .41 .42 .42 .43 .42 .44 Ang. -12 -28 -25 -25 -24 -26 -28 -29 -30 -36 -40 -44 -47 AT-41400 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .56 -60 31.8 39.07 152 0.5 .54 -145 23.5 15.00 104 1.0 .54 -170 18.1 8.03 90 1.5 .55 179 14.5 5.30 82 2.0 .56 170 12.1 4.04 76 2.5 .56 165 10.2 3.24 72 3.0 .58 159 8.8 2.75 65 3.5 .59 154 7.5 2.37 62 4.0 .60 149 6.3 2.06 57 4.5 .61 145 5.4 1.87 53 5.0 .62 142 4.5 1.67 49 5.5 .64 137 3.8 1.54 44 6.0 .65 134 2.9 1.40 41 A model for this device is available in the DEVICE MODELS section. AT-41400 Noise Parameters: VCE = 8 V, IC = 10 mA Γopt Freq. GHz NFO dB Mag Ang RN/50 0.1 0.5 1.0 2.0 4.0 1.2 1.2 1.3 1.6 3.0 .12 .10 .06 .24 .52 3 15 27 163 -153 0.17 0.17 0.16 0.16 0.18 4-102 S22 Ang. -18 -28 -23 -22 -23 -23 -25 -26 -28 -33 -36 -40 -45 AT-41400 Chip Dimensions 30 µm DIA 1.18 mil Base Pad 90 µm 3.54 mil 250 µm 9.8 mil Emitter Pad 250 µm 9.8 mil Note: Die thickness is 5 to 6 mil. 4-103