AT-42035 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago Technologies' AT-42035 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT‑42035 is housed in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 Ω up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42035 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Features • High Output Power: 21.0 dBm Typical P1 dB at 2.0 GHz 20.5 dBm Typical P1 dB at 4.0 GHz • High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz 9.5 dB Typical G1 dB at 4.0 GHz • Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz Typical fT • Cost Effective Ceramic Microstrip Package 35 micro-X Package AT-42035 Absolute Maximum Ratings [1] Symbol VEBO Parameter Units Absolute Maximum Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 80 PT Power Dissipation [2,3] mW 600 Tj Junction Temperature °C 150 TSTG Storage Temperature[4] °C -65 to 150 Thermal Resistance [2,5]: θjc = 175°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. Tcase = 25°C. 3. Derate at 5.7 mW/°C for Tc > 95°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications, TA = 25°C Symbol Parameters and Test Conditions[1] Min. Typ. Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB 10.0 f = 4.0 GHz 11.0 5.0 P1 dB f = 2.0 GHz dBm f= 4.0 GHz 21.0 20.5 G1 dB 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA f = 2.0 GHz dB f = 4.0 GHz 14.0 9.5 NFO Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz dB f = 4.0 GHz 2.0 3.0 GA Gain @ NFO; VCE = 8 V, IC = 10 mA f = 2.0 GHz dB f = 4.0 GHz 13.5 10.0 |S 21E| 2 Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA f T Gain Bandwidth Product: VCE = 8 V, IC = 35 mA hFE Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA GHz — 30 Max. 8.0 150 270 ICBO Collector Cutoff Current; VCB = 8 V µA 0.2 IEBO Emitter Cutoff Current; VEB = 1 V µA 2.0 CCB Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz pF Notes: 1. For this test, the emitter is grounded. Units 0.28 AT-42035 Typical Performance, TA = 25°C 24 12 2.0 GHz 20 4.0 GHz P1dB 16 2.0 GHz 12 0 10 20 30 40 4 50 G1dB 8 4.0 GHz 0 10 20 IC (mA) 4V P1dB 12 24 35 21 30 18 GAIN (dB) MSG 20 MAG |S21E|2 10 5 0 15 12 4 9 3 NFO 3 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. 0 0.5 1.0 2.0 10 V 6V 4V G1dB 12 0 10 20 30 40 50 IC (mA) GA 6 14 10 50 Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. 40 15 40 IC (mA) Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 25 30 2 1 0 3.0 4.0 5.0 FREQUENCY (GHz) Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10�mA. NFO (dB) 0 GAIN (dB) 6V 16 16 G1 dB (dB) 4.0 GHz 4 10 V 20 2.0 GHz 8 G1 dB (dB) |S21E|2 GAIN (dB) 16 24 P1 dB (dBm) 1.0 GHz P1 dB (dBm) 20 Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. AT-42035 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .72 .59 .56 .56 .58 .59 .61 .63 .63 .63 .64 .67 .72 -46 -137 -171 169 155 147 137 128 117 106 93 79 70 28.3 20.9 15.4 12.1 9.7 8.0 6.5 5.2 4.0 3.1 2.3 1.5 0.6 26.09 11.13 5.91 4.03 3.06 2.50 2.10 1.82 1.60 1.43 1.30 1.19 1.07 152 102 80 67 55 48 38 27 17 7 -3 -13 -23 dB S12 Mag. Ang. -37.0 -31.0 -28.2 -26.6 -24.2 -22.6 -20.8 -19.6 -18.0 -16.5 -15.4 -14.3 -13.4 .014 .028 .039 .047 .062 .074 .092 .105 .126 .149 .169 .193 .215 73 44 47 52 55 61 65 62 57 53 48 41 35 dB S12 Mag. Ang. -42.0 -32.8 -28.2 -25.6 -23.2 -21.6 -20.0 -18.4 -17.0 -16.0 -14.9 -14.1 -13.2 .008 .023 .039 .053 .069 .084 .101 .120 .141 .158 .179 .198 .219 68 57 63 66 65 67 64 61 57 50 45 37 30 S22 Mag. Ang. .92 .58 .51 .50 .48 .47 .46 .47 .49 .51 .52 .51 .46 -14 -27 -29 -33 -38 -42 -51 -63 -72 -80 -87 -94 -105 AT-42035 Typical Scattering Parameters, Common Emitter, ZO = 50 Ω,TA = 25°C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 .50 .52 .53 .53 .55 .57 .59 .60 .60 .60 .61 .64 .69 -88 -164 174 160 148 142 134 125 116 104 92 79 70 33.2 22.4 16.6 13.1 10.8 9.0 7.5 6.3 5.2 4.2 3.4 2.6 1.7 45.64 13.24 6.75 4.55 3.45 2.81 2.37 2.06 1.81 1.62 1.47 1.35 1.21 135 92 76 64 53 47 37 27 17 7 -2 -13 -23 A model for this device is available in the DEVICE MODELS section. AT-42035 Noise Parameters: VCE = 8 V, IC = 10 mA Γopt Freq. GHz NFO dB Mag Ang RN/50 0.1 0.5 1.0 2.0 4.0 1.0 1.1 1.3 2.0 3.0 .04 .04 .07 .20 .51 10 66 150 -178 -110 0.13 0.12 0.12 0.12 0.36 S22 Mag. Ang. .77 .45 .42 .41 .41 .39 .38 .39 .41 .43 .44 .43 .38 -22 -25 -26 -30 -36 -40 -49 -61 -71 -78 -84 -91 -102 Ordering Information Part Numbers No. of Devices AT-42035G 100 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 420 BASE 016 1 COLLECTOR 3 .020 .508 2 .057 � .010 1.45 � .25 .022 .56 EMITTER .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = � 0.005 mm .xx = � 0.13 .455 � .030 11.54 � .75 .006 � .002 .15 � .05 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2652EN AV02-0299EN - April 29, 2008