AVAGO AT

AT-41535
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Data Sheet
Description/Applications
Features
The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high
frequency performance. The AT-41535 is house in a cost
effective surface mount 100 mil micro-X package. The 4
micron emitter-to-emitter pitch enables this transistor
to be used in many different functions. The 15 emitter
fingers interdigitated geometry yields an intermediate
sized transistor with impedances that are easy to match
for low noise and moderate power applications. This
device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF,
and microwave frequencies. An optimum noise match
near 50 ??at 1GHz, makes this device easy to use as a low
noise amplifier.
• Low Noise Figure :
- 1.7 dB typical at 2.0 GHz
- 3.0 dB typical at 4.0 GHz
The AT-41535 bipolar transistor is fabricated using Avago
Technologies’ 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection.
Excellent device uniformity, performance and reliability
are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device.
• High Associated Gain
- 14.0 dB typical at 2.0GHz
- 10.0 dB typical at 4.0 GHz
• High Gain-Bandwidth Product
- 8.0 GHz typical fT
• Cost Effective Ceramic Micro-strip Package
35 micro-X Package
Table 1. Absolute Maximum Ratings [1] at Tc = +25°C
Symbol
Parameter
Unit
Max Rating
VEBO
Emitter-Base Voltage
V
1.5
VCBO
Collector-Base Voltage
V
20
VCEO
Collector-Emitter Voltage
V
12
IC
Collector Current
mA
60
PT
Power Dissipation[2]
mW
500
Tj
Junction Temperature
°C
150
Tstg
Storage Temperature
°C
-60 to 150
qjc
Thermal Resistance[5]
°C/W
125
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T—CASE = 25°C
3. Derate at 8 mW/°C for Tc>87.5°C.
4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit.
5. Thermal Resistance is measured using IR Microscopy method.
Table 2. Electrical Specifications at Tc = +25°C, VCE=8V
Symbol
Parameter and Test Condition
|S21E|2
Insertion Power Gain; VCE=8V, Ic=25mA
f = 2.0 GHz
f = 4.0 GHz
dB
11.0
5.5
P1dB
Power Output @1dB Gain Compression:
VCE=8V, Ic=25 mA
f = 2.0 GHz
f = 4.0 GHz
dBm
19.0
18.5
G1dB
1 dB Compressed Gain:
VCE=8V, Ic=25 mA
f = 2.0 GHz
f = 4.0 GHz
dB
14.0
9.0
NFo
Optimum Noise Figure:
VCE=8V, Ic = 10 mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
1.30
1.70
3.00
GA
Gain @ NFo ;
VCE=8V, Ic=10mA
f = 1.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dB
fT
Gain Bandwidth Product: Ic = 25 mA
GHz
hFE
Forward Current Transfer Ratio:
VCE=8V, Ic = 10 mA
-
ICBO
Collector Cutoff Current: VCB = 8 V
uA
0.2
IEBO
Emitter Cutoff Current: VEB = 1 V
uA
1.0
CcBO
Collector Base Capacitance[1]:
VCB=8V,F=1MHz
pF
Notes:
1. For this test, the emitter is grounded.
Units
Min.
13.0
Typ.
Max.
2.0
18.0
14.0
10.0
8.0
30
180
0.20
270
21
14
18
12
10
Ga
12
8
9
6
NF50Ω
4
NFo
3
2
0
12
0
1
2
3
Frequency (GHz)
4
15
10V
6V
Ga
9
16
8
14
7
12
5
11
4
4V
6V
10V
10
NFo
3
7
0
10
20
30
4.0GHz
10
30
40
50
40
16
12
Ga
10
10
4.0GHz
8
6
2
4
1
2
0
0
50
14
2.0GHz
8
6
4.0GHz
NFo
4
2.0GHz
2
0
0
10
Ic (mA)
20
30
40
50
Ic (mA)
Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. F = 2.0GHz.
Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. Vce = 8V.
40
20
35
18
30
14
25
20
MAG
15
|S21E|
10
1.0 GHz
16
MSG
Gain (dB)
Gain (dB)
20
Figure 2. Output Power and 1dB Compression Gain vs. Collector Current and Frequency. Vce = 8V.
6
4V
8
G1dB
8
0
12
9
2.0GHz
4
Vce = 8V, Ic = 10mA
16
13
P1dB
Ic (mA)
Figure 1. Noise Figure and Associated Gain vs. Frequency.
14
16
5
Gain (dB)
0
Gain (dB)
20
2.0GHz
4.0GHz
NFo (dB)
6
NF (dB)
15
24
P1dB (dBm)
16
Gain (dB)
24
NFo (dB)
Gain (dB)
Typical Performance Curves at Tc = +25°C
12
2.0 GHz
10
8
2
6
4.0 GHz
4
5
2
0
0.1
1
10
Frequency (GHz)
Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain
vs. Frequency. Vce = 8V, Ic = 25mA
0
10
20
30
40
50
Ic (mA)
Figure 6. Insertion Power Gain vs. Collector Current and Frequency. Vce = 8V.
Typical Scattering Parameters at Tc = +25°C
Common Emitter, VCE=8V, Ic = 10mA, Zo=50 Ohm
Freq.
S11
S21
S12
S22
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
0.780
-32.6
28.01
25.151
156.9
-40.00
0.010
81.4
0.943
-11.3
0.5
0.495
-112.1
21.90
12.446
108.0
-30.46
0.030
52.0
0.635
-25.3
1
0.402
-154.7
16.64
6.795
85.0
-26.94
0.045
56.0
0.544
-27.3
1.5
0.388
172.7
13.35
4.651
71.0
-24.58
0.059
59.6
0.517
-29.2
2
0.400
162.3
10.97
3.536
60.2
-22.62
0.074
59.0
0.497
-34.1
2.5
0.426
152.3
9.21
2.889
53.5
-21.11
0.088
62.6
0.478
-36.7
3
0.461
141.7
7.75
2.440
43.8
-19.33
0.108
63.0
0.467
-44.4
3.5
0.482
134.5
6.50
2.113
34.2
-18.13
0.124
60.6
0.467
-53.4
4
0.493
125.8
5.47
1.877
25.6
-16.77
0.145
57.1
0.481
-61.9
4.5
0.494
114.1
4.67
1.711
14.8
-15.34
0.171
53.2
0.504
-68.9
5
0.491
104.2
3.80
1.548
5.7
-14.38
0.191
50.9
0.517
-74.3
5.5
0.515
91.9
3.11
1.431
-3.5
-13.35
0.215
44.8
0.503
-79.6
6
0.581
82.6
2.56
1.342
-13.0
-12.40
0.240
40.9
0.457
-90.2
Typical Scattering Parameters at Tc = +25°C
Common Emitter, VCE=8V, Ic = 25mA, Zo=50 Ohm
Freq.
S11
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
0.1
0.586
-53.5
32.22
40.842
145.1
-40.92
0.009
82.1
0.850
-17.4
0.5
0.382
-140.8
23.11
14.306
98.4
-32.04
0.025
61.9
0.528
-22.8
1
0.358
-174.2
17.40
7.416
79.6
-27.74
0.041
68.9
0.487
-23.2
1.5
0.362
167.6
13.98
5.003
67.7
-23.88
0.064
67.4
0.467
-27.4
2
0.385
152.4
11.57
3.789
57.9
-22.05
0.079
64.8
0.448
-31.4
2.5
0.408
145.5
9.79
3.086
52.3
-20.00
0.100
64.8
0.428
-34.7
3
0.442
137.0
8.32
2.605
43.6
-18.71
0.116
65.9
0.418
-43.2
3.5
0.463
130.0
7.09
2.262
34.0
-17.27
0.137
61.2
0.426
-52.3
4
0.484
121.4
6.03
2.003
25.4
-16.08
0.157
58.4
0.431
-60.8
4.5
0.476
110.5
5.24
1.828
15.5
-14.99
0.178
52.2
0.461
-68.6
5
0.462
101.3
4.33
1.647
6.4
-14.11
0.197
48.1
0.466
-72.8
5.5
0.495
90.1
3.73
1.537
-1.8
-13.00
0.224
42.8
0.454
-79.2
6
0.563
80.5
3.10
1.429
-11.6
-12.04
0.250
36.9
0.396
-89.2
S21
S12
S22
Typical Noise Parameters at Tc = +25°C
Part Number Ordering Information
VCE=8V, Ic = 10mA, Zo=50 Ohm
Gopt
Freq.GHz
NfodB
Mag
Ang
RN/50
0.1
1.30
0.184
-4.1
0.22
0.5
1.33
0.206
9.5
0.21
1
1.42
0.107
15.8
0.20
2
1.73
0.328
-165.5
0.18
4
2.92
0.557
-128.3
0.27
Part number
No of Devices
AT-41535G
100
35 micro-X Package Dimensions
.085
2.15
4
EMITTER
.083 DIA.
2.11
415
BASE
1
COLLECTOR
3
.020
.508
2
.057 ± .010
1.45 ± .25
.022
.56
EMITTER
.100
2.54
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx = ± 0.005
mm .xx = ± 0.13
.455 ± .030
11.54 ± .75
.006 ± .002
.15 ± .05
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries.
Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0144EN
AV02-1216EN - April 29, 2008