AT-41535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet Description/Applications Features The AT-41535 of Avago Techologies is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41535 is house in a cost effective surface mount 100 mil micro-X package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 15 emitter fingers interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 ??at 1GHz, makes this device easy to use as a low noise amplifier. • Low Noise Figure : - 1.7 dB typical at 2.0 GHz - 3.0 dB typical at 4.0 GHz The AT-41535 bipolar transistor is fabricated using Avago Technologies’ 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion implantation, self-alignment techniques, and gold metallization in the fabrication of this device. • High Associated Gain - 14.0 dB typical at 2.0GHz - 10.0 dB typical at 4.0 GHz • High Gain-Bandwidth Product - 8.0 GHz typical fT • Cost Effective Ceramic Micro-strip Package 35 micro-X Package Table 1. Absolute Maximum Ratings [1] at Tc = +25°C Symbol Parameter Unit Max Rating VEBO Emitter-Base Voltage V 1.5 VCBO Collector-Base Voltage V 20 VCEO Collector-Emitter Voltage V 12 IC Collector Current mA 60 PT Power Dissipation[2] mW 500 Tj Junction Temperature °C 150 Tstg Storage Temperature °C -60 to 150 qjc Thermal Resistance[5] °C/W 125 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage to the device. 2. T—CASE = 25°C 3. Derate at 8 mW/°C for Tc>87.5°C. 4. Storage above +150°C may tarnish the leads of this package making it difficult to solder into a circuit. 5. Thermal Resistance is measured using IR Microscopy method. Table 2. Electrical Specifications at Tc = +25°C, VCE=8V Symbol Parameter and Test Condition |S21E|2 Insertion Power Gain; VCE=8V, Ic=25mA f = 2.0 GHz f = 4.0 GHz dB 11.0 5.5 P1dB Power Output @1dB Gain Compression: VCE=8V, Ic=25 mA f = 2.0 GHz f = 4.0 GHz dBm 19.0 18.5 G1dB 1 dB Compressed Gain: VCE=8V, Ic=25 mA f = 2.0 GHz f = 4.0 GHz dB 14.0 9.0 NFo Optimum Noise Figure: VCE=8V, Ic = 10 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB 1.30 1.70 3.00 GA Gain @ NFo ; VCE=8V, Ic=10mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz dB fT Gain Bandwidth Product: Ic = 25 mA GHz hFE Forward Current Transfer Ratio: VCE=8V, Ic = 10 mA - ICBO Collector Cutoff Current: VCB = 8 V uA 0.2 IEBO Emitter Cutoff Current: VEB = 1 V uA 1.0 CcBO Collector Base Capacitance[1]: VCB=8V,F=1MHz pF Notes: 1. For this test, the emitter is grounded. Units Min. 13.0 Typ. Max. 2.0 18.0 14.0 10.0 8.0 30 180 0.20 270 21 14 18 12 10 Ga 12 8 9 6 NF50Ω 4 NFo 3 2 0 12 0 1 2 3 Frequency (GHz) 4 15 10V 6V Ga 9 16 8 14 7 12 5 11 4 4V 6V 10V 10 NFo 3 7 0 10 20 30 4.0GHz 10 30 40 50 40 16 12 Ga 10 10 4.0GHz 8 6 2 4 1 2 0 0 50 14 2.0GHz 8 6 4.0GHz NFo 4 2.0GHz 2 0 0 10 Ic (mA) 20 30 40 50 Ic (mA) Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. F = 2.0GHz. Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. Vce = 8V. 40 20 35 18 30 14 25 20 MAG 15 |S21E| 10 1.0 GHz 16 MSG Gain (dB) Gain (dB) 20 Figure 2. Output Power and 1dB Compression Gain vs. Collector Current and Frequency. Vce = 8V. 6 4V 8 G1dB 8 0 12 9 2.0GHz 4 Vce = 8V, Ic = 10mA 16 13 P1dB Ic (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. 14 16 5 Gain (dB) 0 Gain (dB) 20 2.0GHz 4.0GHz NFo (dB) 6 NF (dB) 15 24 P1dB (dBm) 16 Gain (dB) 24 NFo (dB) Gain (dB) Typical Performance Curves at Tc = +25°C 12 2.0 GHz 10 8 2 6 4.0 GHz 4 5 2 0 0.1 1 10 Frequency (GHz) Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. Vce = 8V, Ic = 25mA 0 10 20 30 40 50 Ic (mA) Figure 6. Insertion Power Gain vs. Collector Current and Frequency. Vce = 8V. Typical Scattering Parameters at Tc = +25°C Common Emitter, VCE=8V, Ic = 10mA, Zo=50 Ohm Freq. S11 S21 S12 S22 GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. 0.1 0.780 -32.6 28.01 25.151 156.9 -40.00 0.010 81.4 0.943 -11.3 0.5 0.495 -112.1 21.90 12.446 108.0 -30.46 0.030 52.0 0.635 -25.3 1 0.402 -154.7 16.64 6.795 85.0 -26.94 0.045 56.0 0.544 -27.3 1.5 0.388 172.7 13.35 4.651 71.0 -24.58 0.059 59.6 0.517 -29.2 2 0.400 162.3 10.97 3.536 60.2 -22.62 0.074 59.0 0.497 -34.1 2.5 0.426 152.3 9.21 2.889 53.5 -21.11 0.088 62.6 0.478 -36.7 3 0.461 141.7 7.75 2.440 43.8 -19.33 0.108 63.0 0.467 -44.4 3.5 0.482 134.5 6.50 2.113 34.2 -18.13 0.124 60.6 0.467 -53.4 4 0.493 125.8 5.47 1.877 25.6 -16.77 0.145 57.1 0.481 -61.9 4.5 0.494 114.1 4.67 1.711 14.8 -15.34 0.171 53.2 0.504 -68.9 5 0.491 104.2 3.80 1.548 5.7 -14.38 0.191 50.9 0.517 -74.3 5.5 0.515 91.9 3.11 1.431 -3.5 -13.35 0.215 44.8 0.503 -79.6 6 0.581 82.6 2.56 1.342 -13.0 -12.40 0.240 40.9 0.457 -90.2 Typical Scattering Parameters at Tc = +25°C Common Emitter, VCE=8V, Ic = 25mA, Zo=50 Ohm Freq. S11 GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. 0.1 0.586 -53.5 32.22 40.842 145.1 -40.92 0.009 82.1 0.850 -17.4 0.5 0.382 -140.8 23.11 14.306 98.4 -32.04 0.025 61.9 0.528 -22.8 1 0.358 -174.2 17.40 7.416 79.6 -27.74 0.041 68.9 0.487 -23.2 1.5 0.362 167.6 13.98 5.003 67.7 -23.88 0.064 67.4 0.467 -27.4 2 0.385 152.4 11.57 3.789 57.9 -22.05 0.079 64.8 0.448 -31.4 2.5 0.408 145.5 9.79 3.086 52.3 -20.00 0.100 64.8 0.428 -34.7 3 0.442 137.0 8.32 2.605 43.6 -18.71 0.116 65.9 0.418 -43.2 3.5 0.463 130.0 7.09 2.262 34.0 -17.27 0.137 61.2 0.426 -52.3 4 0.484 121.4 6.03 2.003 25.4 -16.08 0.157 58.4 0.431 -60.8 4.5 0.476 110.5 5.24 1.828 15.5 -14.99 0.178 52.2 0.461 -68.6 5 0.462 101.3 4.33 1.647 6.4 -14.11 0.197 48.1 0.466 -72.8 5.5 0.495 90.1 3.73 1.537 -1.8 -13.00 0.224 42.8 0.454 -79.2 6 0.563 80.5 3.10 1.429 -11.6 -12.04 0.250 36.9 0.396 -89.2 S21 S12 S22 Typical Noise Parameters at Tc = +25°C Part Number Ordering Information VCE=8V, Ic = 10mA, Zo=50 Ohm Gopt Freq.GHz NfodB Mag Ang RN/50 0.1 1.30 0.184 -4.1 0.22 0.5 1.33 0.206 9.5 0.21 1 1.42 0.107 15.8 0.20 2 1.73 0.328 -165.5 0.18 4 2.92 0.557 -128.3 0.27 Part number No of Devices AT-41535G 100 35 micro-X Package Dimensions .085 2.15 4 EMITTER .083 DIA. 2.11 415 BASE 1 COLLECTOR 3 .020 .508 2 .057 ± .010 1.45 ± .25 .022 .56 EMITTER .100 2.54 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 .455 ± .030 11.54 ± .75 .006 ± .002 .15 ± .05 For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies Limited in the United States and other countries. Data subject to change. Copyright © 2005-2008 Avago Technologies Limited. All rights reserved. Obsoletes AV01-0144EN AV02-1216EN - April 29, 2008