Databook.fxp 1/13/99 2:09 PM Page F-14 F-14 01/99 NJ30 Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D S-D This process available for customer-specified applications. G Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. At 25°C free air temperature: NJ30 Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 30 – 40 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 20V, VDS = ØV 2 22 mA VDS = 15V, VGS = ØV –1 –5 V VDS = 15V, ID = 1 nA mS VDS = 15V, VGS = ØV f = 1 kHz – 10 Dynamic Electrical Characteristics Forward Transconductance gfs 6 Input Capacitance Ciss 4.3 5 pF VDS = 15V, VGS = ØV f = 1 MHz Feedback Capacitance Crss 1 1.5 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 4 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDS = 10V, ID = 5 mA f = 1 kHz www.interfet.com