PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting ① ⑥ 0.65 Silicon npn epitaxial type ② ⑤ 0.65 FEATURE ③ ④ 0.2 1.25 APPLICATION 0.13 0～0.1 0.65 0.9 For low frequency amplify application TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 Tr1 Tr2 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) SYMBOL RATING UNIT VCBO Collector to Base voltage PARAMETER 50 V VEBO Emitter to Base voltage 6 V VCEO Collector to Emitter voltage 50 V IC Collector current 200 mA Collector dissipation（Ta=25℃） 150 mW MARKING 6 5 4 Tj Junction temperature ＋125 ℃ .C L L Tstg Storage temperature -55～＋125 ℃ １ PC（Total） ISAHAYA ELECTRONICS CORPORATION 2 3 PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Parameter Test conditions V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ ICBO Collector cut off current VCB =50V,IE=0 IEBO Emitter cut off current VEB=6V,IC=0 hFE* DC forward current gain hFE Limits Unit Min Typ Max 50 - - V - - 0.1 μA - - 0.1 μA VCE=6V,IC=1mA 150 - 800 - DC forward current gain VCE=6V,IC=0.1mA 90 - - - VCE(sat) Collector to Emitter saturation voltage IC=100mA,IB=10mA - - 0.3 V fT Gain band width product VCE=6V,IE=-10mA - 200 - MHZ Cob Collector output capacitance VCB=6V,IE=0,f=1MHZ - 2.5 - pF NF Noise figure VCE=6V,IE=-0.1mA,f=1kHZ,RG=2kΩ - - 15 dB * : It shows hFE classification in right table. Item E F G hFE 150～300 250～500 400～800 ISAHAYA ELECTRONICS CORPORATION PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type TYPICAL CHARACTERISTICS COMMON EMITTER TRANSFER COMMON EMITTER OUTPUT 0.16mA 50 0.12mA 40 0.10mA 30 0.08mA 0.06mA 20 0.04mA 10 0.02mA IB=0 1 2 3 4 40 30 20 10 0 0 0 Ta=25℃ VCE=6V Ta=25℃ 0.14mA COLLECTOR CURRENT IC(mA) COLLECTOR CURRENT IC(mA) 50 0 5 COLLECTOR EMITTER VOLTAGE VCE(V) 10000 250 GAIN BAND WIDTH PRODUCT fT(MHz) Ta=25℃ VCE=6V 100(@IC=1mA) 1000 100 10 1 0.1 1 10 100 1000 COLLECTOR CURRENT IC(mA) Ta=25℃ VCE=6V 200 150 100 50 0 -0.1 -1 -10 EMITTER CURRENT IE(mA) COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) 1 GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE 0.2 0.4 0.6 0.8 BASE TO EMITTER VOLTAGE VBE(V) Ta=25℃ IE=0 f=1MHz 10 1 0.1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE VCB(V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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