〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING 2SC5547 is SC-62(SOT-89) package resin sealed silicon NPN epitaxial transistor. It is designed for high frequency application. UNIT:mm 4.6 MAX 1.6 1.5 FEATURE ･High gain bandwidth product. fT=4.5GHz ･High gain,low noise ･Can operate at low voltage. ･SC-62(SOT-89)package easy mountaing C E B 0.53 MAX 0.4 0.48 MAX 1.5 3.0 Mark APPLICATION TERMINAL CONNECTOR For TV tuners,high frequency amplifier. celluar phone system. Ｅ: EMITTER Ｃ: COLLECTOR JEITA : SC-62 JEDEC : Ｂ: BASE Marking MAXIMUM RATINGS (Ta=25℃) Symbol VCBO Ratings Parameter unit V Collector to Base voltage Emitter to Base voltage 20 3 VCEO IC Collector to Emitter voltage 15 V 50 mA PC Collector dissipation mW Tj Janction temperture 400 +150 Tstg Storage temperture -55∼+150 ℃ VEBO Collector current AD V W Lot No. ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) Symbol Limits Parameter Test conditions V(BR)CBO C to B break down voltage V(BR)CEO C to E break down voltage I CB=10μA, I E=0 I C=1mA, RBE=∞ min typ max unit 20 V 15 I CBO Collector cut off curent VCB=15V, I E=0 0.5 V μA I EBO Emitter cut off curent DC forward current gain VEB=3V, I C=0 10 μA Collector output capacitance VCB=5V, I E=0, f=1MHz fT |S21|2 Gain bandwidth product VCE=5V, I E=-20mA Insertion power gain NF Noise figure VCB=5V, I C=20mA, f=1.8GHz VCE=5V, I C=5mA, f=1.0GHz hFE Cob VCE=5V, I C=20mA 30 90 3.5 1.0 4.5 9.0 1.5 ISAHAYA ELECTRONICS CORPORATION 200 1.5 pF GHz dB dB 〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type 直流電流増幅率−コレクタ電流特性 DC forward current gain VS. Collector current Commonエミッタ接地伝達特性 Emitter Transfer 1000 100 Ta=25℃ VCE=5V Ta=25℃ VCE=5V コレクタ電流 IC(mA) 直流電流増幅率 hFE 10 100 10 1 0.1 0.01 1 0.001 0.1 1 10 100 0.5 Collector current コレクタ電流 IC(mA) 0.6 0.8 0.9 1 電力利得−コレクタ電流特性 Insertion power gain VS. Collector current Gain bandwidth product 利得帯域幅積−コレクタ電流特性 VS.Collector current 10.00 20.00 Ta=25℃ VCE=5V Ta=25℃ VCE=5V 18.00 16.00 電力利得 ｜S21｜(dB) 利得帯域幅積 fT(GHz) 0.7 Base to Emitter voltage ベース・エミッタ間電圧 VBE(V) 1.00 f=0.5GHz 14.00 12.00 10.00 f=1.0GHz 8.00 6.00 4.00 2.00 0.10 0.1 1.0 10.0 100.0 0.00 0.1 Collector current コレクタ電流 IC(mA) 1.0 10.0 100.0 Collector コレクタ電流 IC(mA) current Collector output capacitance VS Collector output capacitance 雑音指数−コレクタ電流特性 Noise Figure VS. Collector current コレクタ出力容量− Collector output capacitance コレクタ・ベース間電圧特性 VS. Collector to Base voltage 10.0 5.0 Ta=25℃ IE=0mA f=1MHz 4.5 Ta=25℃ VCE=5V 4.0 f=1.0GHz 3.5 3.0 1.0 2.5 2.0 1.5 1.0 0.5 0.1 0.0 0.1 1 10 Collector コレクタ・ベース間電圧 V to Base voltage CB (V) 100 1 10 Collector current C(mA) Collectorコレクタ電流 I current ISAHAYA ELECTRONICS CORPORATION 100 〈Transistor〉 2SC5547 For High Frequency Amplify Application Silicon NPN Epitaxial Type Ｓ parameter VCE=5V,IC=5mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.334 0.321 0.312 0.305 0.301 0.293 0.285 0.281 0.277 0.273 0.271 0.270 0.268 0.268 0.269 0.270 ANG -143.8 -154.7 -164.0 -172.2 -179.5 173.3 166.3 160.5 154.1 147.5 141.7 135.7 129.5 123.1 118.1 112.8 S21 ANG 50.7 51.8 52.4 52.9 52.9 52.8 53.0 52.6 52.0 51.4 50.9 49.9 49.0 48.1 47.1 45.9 S12 MAG ANG 86.1 5.077 80.3 4.301 75.2 3.721 70.4 3.281 65.7 2.948 61.3 2.675 57.3 2.441 53.4 2.258 49.6 2.099 46.1 1.957 42.6 1.843 39.2 1.741 35.9 1.650 32.9 1.572 29.8 1.502 26.9 1.434 S22 MAG ANG 0.433 -56.6 0.409 -59.8 0.400 -62.7 0.397 -65.6 0.405 -68.4 0.409 -71.1 0.413 -73.7 0.424 -76.0 0.432 -78.5 0.443 -80.6 0.454 -83.2 0.462 -85.5 0.473 -87.3 0.484 -89.5 0.495 -91.8 0.507 -93.9 ANG 38.9 36.7 35.3 34.7 34.6 35.8 36.9 38.4 39.8 41.2 42.6 43.9 44.9 45.4 46.0 46.4 S12 MAG ANG 91.5 4.272 85.5 3.612 79.9 3.142 74.9 2.749 69.7 2.471 64.6 2.240 59.9 2.034 55.5 1.864 51.4 1.730 47.6 1.610 43.8 1.515 40.0 1.425 36.5 1.347 33.0 1.282 29.8 1.226 26.5 1.153 S22 MAG ANG 0.639 -50.9 0.599 -55.9 0.577 -60.0 0.559 -63.7 0.554 -67.2 0.547 -70.3 0.546 -73.2 0.551 -75.9 0.554 -78.2 0.561 -81.1 0.567 -83.6 0.573 -86.1 0.582 -88.2 0.589 -90.4 0.597 -92.7 0.609 -95.2 S21 MAG ANG 62.0 0.089 62.3 0.104 61.7 0.118 61.5 0.132 60.5 0.147 59.6 0.161 58.6 0.176 57.6 0.190 56.0 0.203 54.8 0.216 53.6 0.231 52.1 0.244 50.5 0.258 48.9 0.270 47.4 0.283 46.1 0.295 S12 MAG ANG 81.9 5.555 76.8 4.675 72.0 4.056 67.6 3.574 63.4 3.208 59.4 2.902 55.7 2.657 52.2 2.454 48.6 2.281 45.3 2.129 42.0 2.006 38.7 1.898 35.6 1.792 32.7 1.706 29.8 1.631 27.0 1.561 S22 MAG ANG 0.326 -55.8 0.318 -58.3 0.324 -61.3 0.327 -64.4 0.337 -67.3 0.346 -70.1 0.355 -72.7 0.367 -75.2 0.377 -77.7 0.390 -79.8 0.404 -82.5 0.416 -84.9 0.423 -86.7 0.439 -88.6 0.450 -90.7 0.465 -93.3 MAG 0.098 0.108 0.119 0.130 0.141 0.153 0.165 0.177 0.189 0.200 0.213 0.227 0.238 0.250 0.264 0.276 VCE=5V,IC=2mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.410 0.399 0.389 0.382 0.377 0.366 0.359 0.356 0.354 0.350 0.349 0.346 0.343 0.343 0.343 0.350 ANG -117.8 -128.3 -138.5 -147.4 -156.1 -163.9 -170.1 -176.7 176.6 169.9 163.5 156.4 149.7 143.8 137.2 132.4 S21 MAG 0.131 0.134 0.139 0.142 0.144 0.148 0.152 0.156 0.162 0.168 0.176 0.185 0.194 0.205 0.216 0.228 VCE=5V,IC=10mA FREQUENCY (MHZ) 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400.00 1500.00 1600.00 1700.00 1800.00 1900.00 2000.00 S11 MAG 0.300 0.292 0.285 0.280 0.277 0.272 0.266 0.263 0.259 0.256 0.254 0.253 0.252 0.251 0.251 0.253 ANG -164.4 -174.1 177.1 170.4 163.6 156.7 150.8 145.5 139.6 133.4 128.1 122.1 116.8 111.4 105.7 100.7 ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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