DSEI 120 Fast Recovery Epitaxial Diode (FRED) VRSM VRRM V V 600 600 C A Type IFAVM = 126 A VRRM = 600 V trr = 35 ns TO-247 AD C DSEI 120-06A A C A = Anode, C = Cathode Symbol Test Conditions IFRMS IFAVM ÿÿ① IFAV ② IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 TC = 110°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 100 126 77 tbd A A A A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 600 660 A A TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 540 600 A A 1800 1800 A2s A2s 1450 1500 2 As A2s -40...+150 150 -40...+150 °C °C °C 357 W I2t TVJ = 45°C Maximum Ratings t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot TC = 25°C Md Mounting torque Features ● ● ● ● ● ● ● Applications ● ● ● ● ● 0.8...1.2 Weight 6 Nm g ● ● ● Symbol Test Conditions IR TVJ = 25°C TVJ = 25°C TVJ = 125°C VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM 3 0.75 20 mA mA mA VF IF = 70 A; TVJ = 150°C TVJ = 25°C 1.12 1.3 V V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 3.5 V mW Characteristic Values typ. max. 0.35 35 K/W K/W K/W 0.25 trr IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25°C 35 50 ns IRM VR = 350 V; IF = 80 A; -diF/dt = 200 A/ms L £ 0.05 mH; TVJ = 100°C 17 21 A Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages ● ● ● ● RthJC RthCK RthJA International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 ● High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling Dimensions See DSEI 60-12 page D5 - 27 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 028 ① Chip capability, ② limited to 70 A by leads 1-2 DSEI 120, 600V 150 A 7 T = 100°C µC VJ V = 300V 6 R 125 IF Qr IRM 60 IF=140A IF= 70A IF= 35A 5 100 4 TVJ=150°C 80 A TVJ= 100°C 70 VR = 300V IF=140A IF= 70A IF= 35A 50 75 40 3 TVJ=100°C 30 50 2 25 1 TVJ=25°C 0 0.0 0.5 1.0 V VF 20 10 0 100 1.5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 240 1.4 220 Qr 400 ms 1000 600 A/ 800 -diF/dt Fig. 3 Peak reverse current IRM versus -diF/dt TVJ= 100°C IF = 100A 3.0 µs 2.5 VFR tfr 2.0 40 200 1.0 200 V 50 trr Kf 0 60 TVJ= 100°C VR = 300V ns 1.2 0 A/ms 1000 -diF/dt VFR tfr IF=140A IF= 70A IF= 35A 180 0.8 30 1.5 20 1.0 10 0.5 160 IRM 0.6 140 0.4 0 50 100 °C 150 0 200 400 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 600 A/ 800 ms 1000 -diF/dt Fig. 5 Recovery time trr versus -diF/dt 1 K/W 0 0 600 800 diF/dt 0.0 1000 A/ms Constants for ZthJC calculation: 1 2 3 4 D=0.7 0.5 0.1 400 Fig. 6 Peak forward voltage VFR and tfr versus diF/dt i ZthJC 200 0.3 0.2 Rthi (K/W) ti (s) 0.017 0.0184 0.1296 0.185 0.00038 0.0026 0.0387 0.274 0.01 0.05 Single Pulse 0.01 0.001 DSEI 120-06 0.01 0.1 1s 10 t Fig. 7 Transient thermal resistance junction to case at various duty cycles © 2000 IXYS All rights reserved 2-2