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DSEI 30-10A
Fast RecoveryEpitaxial Diode (FRED)
TO-247 AD
VRSM
V
DSEI 30 IFAVM = 30 A 1000
VRRM = 1000 V
= 35 ns Symbol
trr
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International standard package
JEDEC TO-247 AD
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meet UL 94V-0
Applications
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Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
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High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
2014-8-7
Type
A
V
1000
C
C
DSEI 30-10A
C
A
A = Anode, C = Cathode
Test Conditions
Maximum Ratings
I FRMS
I FAVM ¬
I FRM
TVJ = TVJM
TC = 85°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
70
30
375
A
A
A
I FSM
TVJ = 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
210
A
A
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
185
195
A
A
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
180
A2s
A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
170
160
A2s
A2s
-40...+150
150
-40...+150
°C
°C
°C
138
W
Features
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VRRM
∫ i2 dt
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Weight
Symbol
6
Test Conditions
typ.
Nm/lb.in.
Nm/lb.in.
g
Characteristic Values
max.
IR
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
VR = VRRM
VR = 0.8 • VRRM
VR = 0.8 • VRRM
750
250
7
µA
µA
mA
VF
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
2
2.4
V
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.5
12.5
V
mΩ
0.9
35
K/W
K/W
K/W
RthJC
RthCK
RthJA
0.25
t rr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C
35
50
ns
I RM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs
L ≤ 0.05 µH; TVJ = 100°C
16
18
A
1
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DSEI 30-10A
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF /dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus
-diF/dt.
Dimensions
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Fig. 7 Transient thermal impedance junction to case.
2014-8-7
2
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