IXYS DSI45-16A

DSI 45
VRRM = 800-1600 V
IF(AV)M = 48 A
Rectifier Diode
VRSM
V
900
1300
1700
VRRM
Type
A
TO-247 AD
ISOPLUS 247TM
Version A
Version AR
V
800
1200
1600
DSI 45-08A
DSI 45-12A
DSI 45-16A
C
C
A
DSI 45-16AR
Symbol
Conditions
IF(AV)M
TC = 105°C; 180° sine
IFSM
TVJ = 45°C;
VR = 0 V;
I2t
C
48
A
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
475
520
A
A
TVJ = 150°C;
VR = 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
380
420
A
A
TVJ = 45°C;
VR = 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1120
1120
A2s
A2 s
TVJ = 150°C;
VR = 0 V;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
720
720
A2s
A2 s
-40...+150
150
-40...+150
°C
°C
°C
0.8...1.2
Nm
2500
V~
Md *
mounting torque
VISOL **
50/60 Hz, RMS, t = 1 minute, leads-to-tab
TAB
A = Anode, C = Cathode
Maximum Ratings
TVJ
TVJM
Tstg
A
C (TAB)
Features
• International standard package
• Planar glassivated chips
• Version AR isolated and
UL registered E153432
• Epoxy meets UL 94V-0
Applications
•
•
•
•
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
Advantages
•
•
•
•
Space and weight savings
Simple mounting
Improved temperature and power cycling
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Weight
typical
6
g
* Verson A only; ** Version AR only
Conditions
IR
TVJ = TVJM; VR = VRRM
≤
3
mA
VF
IF = 40 A; TVJ = 25°C
≤
1.18
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.8
8
V
mΩ
RthJC
RthCH
DC current
typical
0.55
0.2
K/W
K/W
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Characteristic Values
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D*
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
2.2
2.59
0.087
0.102
* ISOPLUS 247
TM
without hole
420
Symbol
1-2
DSI 45
70
500
A
104
50Hz, 80% VRRM
2
As
A
60
400
IFSM
TVJ=150°C
TVJ= 25°C
IF 50
VR = 0 V
I2t
TVJ = 45°C
300
40
TVJ = 45°C
103
30
200
20
TVJ = 150°C
TVJ = 150°C
100
10
0
0.0
0.4
1.2 V
0.8
102
0
0.001
1.6
0.01
0.1
VF
s
1
1
2
3
t
Fig. 1 Forward current versus voltage
drop per diode
4 5 6 78
ms910
t
Fig. 3 I2t versus time per diode
Fig. 2 Surge overload current
100
50
RthHA :
W
A
0.5 K/W
1.0 K/W
1.5K/W
2.0 K/W
3.0 K/W
4.0 K/W
6.0 K/W
80
Ptot
60
40
IF(AV)M
30
40
20
20
10
0
0
0
10
20
30
40
A
0
20
40
60
80 100 120 140 °C
Id(AV)M
Fig. 4
0
Tamb
Power dissipation versus direct output current and ambient temperature, sine 180°
20 40 60 80 100 120 140 °C
TC
Fig. 5 Max. forward current versus
case temperature
0.6
K/W
ZthJC
0.4
Constants for ZthJC calculation:
0.2
DSI45
0.01
0.1
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
s
1
Rthi (K/W)
ti (s)
1
2
3
4
0.1633
0.2517
0.0933
0.04167
0.016
0.118
0.588
2.6
10
t
420
0.0
0.001
i
2-2