IXYS DSAI75-16B

DS 75
DSA 75
Rectifier Diode
Avalanche Diode
VRSM
V(BR)minÿ① VRRM
DSI 75
DSAI 75
VRRM = 800-1800 V
IF(RMS) = 160 A
IF(AV)M = 110 A
Anode
Cathode
on stud
on stud
V
V
V
900
1300
-
800
1200
DS 75-08B
DS 75-12B
DSI 75-08B
DSI 75-12B
1300
1700
1900
1300
1760
1950
1200
1600
1800
DSA 75-12B
DSA 75-16B
DSA 75-18B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
DO-203 AB
C
A
A
DS
DSA
C
DSI
DSAI
① Only for Avalanche Diodes
1/4-28UNF
A = Anode
Symbol
Test Conditions
IF(RMS)
IF(AV)M
TVJ = TVJM
Tcase = 100°C; 180° sine
PRSM
DSA(I) types, TVJ = TVJM, tp = 10 ms
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1400
1500
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1250
1310
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
9800
9450
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
7820
7210
A2s
A2s
-40...+180
180
-40...+180
°C
°C
°C
I2t
TVJ
TVJM
Tstg
Md
C = Cathode
Maximum Ratings
160
110
A
A
20
kW
●
Mounting torque
2.4-4.5
21-40
21
Weight
Nm
lb.in.
g
Symbol
Test Conditions
IR
TVJ = TVJM; VR = VRRM
£
6
VF
IF
£
1.17
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.75
2
V
mW
RthJC
RthJH
DC current
DC current
0.5
0.9
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
4.05
3.9
100
mm
mm
m/s2
= 150 A; TVJ = 25°C
Features
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
●
Applications
High power rectifiers
Field supply for DC motors
Power supplies
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
mA
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
744
© 2000 IXYS All rights reserved
1-2
DS 75
DSA 75
200
105
1500
typ.
A
lim.
A
50Hz, 80%VRRM
6
TVJ= 180°C
TVJ= 25°C
TVJ = 45°C
I2t
TVJ = 45°C
1000
VR = 0 V
A2s
IFSM
IF 150
DSI 75
DSAI 75
TVJ = 180°C
4
100
500
TVJ = 180°C
2
50
0
0.0
0.5
1.0
VF
104
0
10-3
1.5 V
Fig. 1 Forward characteristics
10-2
10-1
t
s
100
1
2
3
4
5 6 7 ms
8 910
t
Fig. 3 I2t versus time (1-10 ms)
Fig. 2 Surge overload current
IFSM: crest value, t: duration
200
200
A
W
RthJA :
IF(AV)M
1 K/W
1.2 K/W
150
PF
DC
180° sin
120°
60°
30°
150
1.6 K/W
2 K/W
3 K/W
4 K/W
100
100
DC
180° sin
120°
60°
30°
50
50
0
0
0
50
100
150
A
200
00
50
IF(AV)M
150 °C 200
100
0
40
80
120
Tamb
Fig. 4 Power dissipation versus forward current and ambient temperature
160 °C 200
Tcase
Fig. 5 Max. forward current at case
temperature
1.5
K/W
30°
60°
120°
180°
DC
ZthJH
1.0
RthJH for various conduction angles d:
d
RthJH (K/W)
DC
180°
120°
60°
30°
0.900
1.028
1.085
1.272
1.476
0.5
Constants for ZthJH calculation:
i
0.0
10-3
10-2
10-1
100
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
101
102
t
s
103
1
2
3
4
Rthi (K/W)
ti (s)
0.0731
0.1234
0.4035
0.3000
0.0015
0.0237
0.4838
1.5
2-2