DS 75 DSA 75 Rectifier Diode Avalanche Diode VRSM V(BR)minÿ① VRRM DSI 75 DSAI 75 VRRM = 800-1800 V IF(RMS) = 160 A IF(AV)M = 110 A Anode Cathode on stud on stud V V V 900 1300 - 800 1200 DS 75-08B DS 75-12B DSI 75-08B DSI 75-12B 1300 1700 1900 1300 1760 1950 1200 1600 1800 DSA 75-12B DSA 75-16B DSA 75-18B DSAI 75-12B DSAI 75-16B DSAI 75-18B DO-203 AB C A A DS DSA C DSI DSAI ① Only for Avalanche Diodes 1/4-28UNF A = Anode Symbol Test Conditions IF(RMS) IF(AV)M TVJ = TVJM Tcase = 100°C; 180° sine PRSM DSA(I) types, TVJ = TVJM, tp = 10 ms IFSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1400 1500 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1250 1310 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9800 9450 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 7820 7210 A2s A2s -40...+180 180 -40...+180 °C °C °C I2t TVJ TVJM Tstg Md C = Cathode Maximum Ratings 160 110 A A 20 kW ● Mounting torque 2.4-4.5 21-40 21 Weight Nm lb.in. g Symbol Test Conditions IR TVJ = TVJM; VR = VRRM £ 6 VF IF £ 1.17 V VT0 rT For power-loss calculations only TVJ = TVJM 0.75 2 V mW RthJC RthJH DC current DC current 0.5 0.9 K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 4.05 3.9 100 mm mm m/s2 = 150 A; TVJ = 25°C Features International standard package, JEDEC DO-203 AB (DO-5) Planar glassivated chips ● Applications High power rectifiers Field supply for DC motors Power supplies ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values mA Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 744 © 2000 IXYS All rights reserved 1-2 DS 75 DSA 75 200 105 1500 typ. A lim. A 50Hz, 80%VRRM 6 TVJ= 180°C TVJ= 25°C TVJ = 45°C I2t TVJ = 45°C 1000 VR = 0 V A2s IFSM IF 150 DSI 75 DSAI 75 TVJ = 180°C 4 100 500 TVJ = 180°C 2 50 0 0.0 0.5 1.0 VF 104 0 10-3 1.5 V Fig. 1 Forward characteristics 10-2 10-1 t s 100 1 2 3 4 5 6 7 ms 8 910 t Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current IFSM: crest value, t: duration 200 200 A W RthJA : IF(AV)M 1 K/W 1.2 K/W 150 PF DC 180° sin 120° 60° 30° 150 1.6 K/W 2 K/W 3 K/W 4 K/W 100 100 DC 180° sin 120° 60° 30° 50 50 0 0 0 50 100 150 A 200 00 50 IF(AV)M 150 °C 200 100 0 40 80 120 Tamb Fig. 4 Power dissipation versus forward current and ambient temperature 160 °C 200 Tcase Fig. 5 Max. forward current at case temperature 1.5 K/W 30° 60° 120° 180° DC ZthJH 1.0 RthJH for various conduction angles d: d RthJH (K/W) DC 180° 120° 60° 30° 0.900 1.028 1.085 1.272 1.476 0.5 Constants for ZthJH calculation: i 0.0 10-3 10-2 10-1 100 Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 101 102 t s 103 1 2 3 4 Rthi (K/W) ti (s) 0.0731 0.1234 0.4035 0.3000 0.0015 0.0237 0.4838 1.5 2-2