DS 9 DSA 9 VRRM = 800-1800 V IF(RMS) = 18 A IF(AV)M = 11 A Rectifier Diode Avalanche Diode VRSM V 900 1300 1700 1900 V(BR)minÿ① VRRM V V 1300 1750 1950 800 1200 1600 1800 Standard Avalanche Types Types DS 9-08F DS 9-12F A C DO-203 AA C DSA 9-12F DSA 9-16F DSA 9-18F A M5 ① Only for Avalanche Diodes A = Anode Symbol Test Conditions Maximum Ratings IF(RMS) IF(AVM) TVJ = TVJM Tcase = 150°C; 180° sine 18 11 A A PRSM DSA types, TVJ = TVJM, tp = 10 ms 4.5 kW IFSM TVJ = 45°C; VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 250 265 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 220 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 310 295 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 190 A2s A2s -40...+180 180 -40...+180 °C °C °C C = Cathode Features International standard package, JEDEC DO-203 AA Planar glassivated chips ● I2t TVJ TVJM Tstg Md Mounting torque 2.2-2.8 19-25 5 Weight Nm lb.in. g Symbol Test Conditions IR TVJ = TVJM; VR = VRRM £ 3 VF IF £ 1.4 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 15 V mW RthJC RthJH DC current 180° sine DC current 2.0 2.17 3.0 K/W K/W K/W dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 2.0 2.0 100 mm mm m/s2 = 36 A; TVJ = 25°C ● Applications Supplies for DC power equipment DC supply for PWM inverter Field supply for DC motors Battery DC power supplies ● ● ● ● Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits ● ● ● ● Dimensions in mm (1 mm = 0.0394") Characteristic Values mA Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions © 2000 IXYS All rights reserved 1-2 DS 9 DSA 9 50 300 1000 A A 250 800 A2s typ. 40 lim. 50Hz, 80%VRRM IFSM IF 200 TVJ= 180°C TVJ= 25°C 600 I2t TVJ = 45°C TVJ = 180°C 30 VR = 0 V 400 150 20 TVJ=45°C 100 10 200 TVJ=180°C 50 0 V 1.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VF 0 10-3 Fig. 1 Forward characteristics 100 10-2 10-1 100 s t 101 1 2 3 4 Fig. 3 I2t versus time (1-10 ms) Fig. 2 Surge overload current IFSM: crest value, t: duration 25 25 W A DC d = 180° sin d = 120° d= 60° d= 30° RthJA : 20 20 8.3 K/W PF IF(AV)M 13 K/W (CU80x80) 18 K/W 15 5 6 7 ms 8 910 t 15 10 10 DC 180° sin 120° 60° 30° 5 5 0 0 0 5 10 15 A 20 00 50 150 °C 200 100 IF(AV)M Fig. 4 Power dissipation versus forward current and ambient temperature 50 100 150 RthJH for various conduction angles d: 30° 60° K/W 4 120° 180° ZthJH 200 °C 250 Tcase Fig. 5 Max. forward current at case temperature 5 DC 3 2 d RthJH (K/W) DC 180° 120° 60° 30° 3.0 3.35 3.56 4.0 4.64 Constants for ZthJH calculation: i 1 0 10-3 0 Tamb 10-2 10-1 100 101 102 103 s t 104 1 2 3 4 Rthi (K/W) ti (s) 0.095 0.515 1.39 1.0 0.00032 0.0102 0.360 2.30 Fig. 6 Transient thermal impedance junction to heatsink © 2000 IXYS All rights reserved 2-2