IXYS DS9-08F

DS 9
DSA 9
VRRM = 800-1800 V
IF(RMS) = 18 A
IF(AV)M = 11 A
Rectifier Diode
Avalanche Diode
VRSM
V
900
1300
1700
1900
V(BR)minÿ① VRRM
V
V
1300
1750
1950
800
1200
1600
1800
Standard
Avalanche
Types
Types
DS 9-08F
DS 9-12F
A
C
DO-203 AA
C
DSA 9-12F
DSA 9-16F
DSA 9-18F
A
M5
① Only for Avalanche Diodes
A = Anode
Symbol
Test Conditions
Maximum Ratings
IF(RMS)
IF(AVM)
TVJ = TVJM
Tcase = 150°C; 180° sine
18
11
A
A
PRSM
DSA types, TVJ = TVJM, tp = 10 ms
4.5
kW
IFSM
TVJ = 45°C;
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
250
265
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
220
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
310
295
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
190
A2s
A2s
-40...+180
180
-40...+180
°C
°C
°C
C = Cathode
Features
International standard package,
JEDEC DO-203 AA
Planar glassivated chips
●
I2t
TVJ
TVJM
Tstg
Md
Mounting torque
2.2-2.8
19-25
5
Weight
Nm
lb.in.
g
Symbol
Test Conditions
IR
TVJ = TVJM; VR = VRRM
£
3
VF
IF
£
1.4
V
VT0
rT
For power-loss calculations only
TVJ = TVJM
0.85
15
V
mW
RthJC
RthJH
DC current
180° sine
DC current
2.0
2.17
3.0
K/W
K/W
K/W
dS
dA
a
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
2.0
2.0
100
mm
mm
m/s2
= 36 A; TVJ = 25°C
●
Applications
Supplies for DC power equipment
DC supply for PWM inverter
Field supply for DC motors
Battery DC power supplies
●
●
●
●
Advantages
Space and weight savings
Simple mounting
Improved temperature and power
cycling
Reduced protection circuits
●
●
●
●
Dimensions in mm (1 mm = 0.0394")
Characteristic Values
mA
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1-2
DS 9
DSA 9
50
300
1000
A
A
250
800
A2s
typ.
40
lim.
50Hz, 80%VRRM
IFSM
IF
200
TVJ= 180°C
TVJ= 25°C
600
I2t
TVJ = 45°C
TVJ = 180°C
30
VR = 0 V
400
150
20
TVJ=45°C
100
10
200
TVJ=180°C
50
0
V 1.6
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF
0
10-3
Fig. 1 Forward characteristics
100
10-2
10-1
100 s
t
101
1
2
3
4
Fig. 3 I2t versus time (1-10 ms)
Fig. 2 Surge overload current
IFSM: crest value, t: duration
25
25
W
A
DC
d = 180° sin
d = 120°
d=
60°
d=
30°
RthJA :
20
20
8.3 K/W
PF
IF(AV)M
13 K/W
(CU80x80)
18 K/W
15
5 6 7 ms
8 910
t
15
10
10
DC
180° sin
120°
60°
30°
5
5
0
0
0
5
10
15
A
20
00
50
150 °C 200
100
IF(AV)M
Fig. 4 Power dissipation versus forward current and ambient temperature
50
100
150
RthJH for various conduction angles d:
30°
60°
K/W
4
120°
180°
ZthJH
200 °C 250
Tcase
Fig. 5 Max. forward current at case
temperature
5
DC
3
2
d
RthJH (K/W)
DC
180°
120°
60°
30°
3.0
3.35
3.56
4.0
4.64
Constants for ZthJH calculation:
i
1
0
10-3
0
Tamb
10-2
10-1
100
101
102
103 s
t
104
1
2
3
4
Rthi (K/W)
ti (s)
0.095
0.515
1.39
1.0
0.00032
0.0102
0.360
2.30
Fig. 6 Transient thermal impedance junction to heatsink
© 2000 IXYS All rights reserved
2-2