MDD 200 High Power Diode Modules VRSM V 1500 1700 1900 2300 VRRM V 1400 1600 1800 2200 Type IFRSM = 2x 350A IFAVM = 2x 224A VRRM = 1400-2200V 3 1 2 1 2 3 MDD 200-14N1 MDD 200-16N1 MDD 200-18N1 MDD 200-22N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 100°C; 180° sine IFSM TVJ = 45°C; VR = 0 It 2 Maximum Ratings 350 224 A A t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 10500 11200 A A • International standard package • Direct copper bonded Al2O3 ceramic with copper base plate • Planar passivated chips • Isolation voltage 3600 V~ TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 9100 9700 A A Applications TVJ = 45°C; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 551000 527000 As A2s TVJ = TVJM; VR = 0 t = 10 ms (50 Hz) t = 8.3 ms (60 Hz) 414000 395000 A2s A2s -40...+150 150 -40...+125 °C °C °C 3000 3600 V~ V~ 2.25 - 2.75 4.5 - 5.5 Nm Nm 120 g TVJ TVJM Tstg 2 VISOL 50/60 Hz, RMS t = 1 min IISOL < 1 mA t=1s Md Mounting torque (M6) Terminal connection torque (M6) Weight Typical including screws Symbol Conditions IRRM VR = VRRM; TVJ = TVJM 20 mA VF IF = 300 A; TVJ = 25°C 1.3 V VT0 rt For power-loss calculations only TVJ = TVJM 0.8 0.6 V mW RthJC per diode; DC current per module per diode; DC current per module 0.130 0.065 0.230 0.115 K/W K/W K/W K/W RthJK Features • Supplies for DC power equipment • DC supply for PWM inverter • Field supply for DC motors • Battery DC power supplies Advantages • Space and weight savings • Simple mounting • Improved temperature and power cycling • Reduced protection circuits Dimensions in mm (1 mm = 0.0394“) Characteristics Values QS IRM TVJ = 125°C; IF = 300 A; -di/dt = 50 A/µs 625 275 µC A dS dA a Creeping distance on surface Creepage distance in air Maximum allowable acceleration 12.7 9.6 50 mm mm m/s2 Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080128a 1-3 MDD 200 106 10000 50 Hz 80 % VRRM TVJ = 45°C TVJ = 125°C 8000 DC 180° sin 120° 60° 30° 300 4000 IFAVM [A] 6000 I2t [A2s] IFSM [A] 400 VR = 0 V TVJ = 45°C 200 TVJ = 125°C 100 2000 0 0.001 0.01 s 0.1 t [s] 105 1 Fig. 1 Surge overload current IFSM: Crest value, t: duration 1 0 10 t [ms] 25 50 75 100 125 150 TC [°C] Fig. 2 I2t versus time (1-10 ms) Fig. 3 Maximum forward current at case temperature 2000 400 RthKA K/W 1600 IFRMS [A] 1400 200 DC 180° sin 120° 60° 30° 100 TC = 85°C TVJ = 150°C 1800 0.1 0.2 0.3 0.5 0.8 1.2 2.0 300 Ptot [W] 0 1200 1000 800 600 400 200 0 0 100 200 0 300 25 50 IFAVM [A] Fig. 4 Power dissipation versus forward current and ambient temperature (per diode) 75 100 125 0 0.001 150 0.1 1 10 Fig. 5 Rated RMS current versus time (360° conduction) 500 1600 RthKA K/W 1400 0.02 0.04 0.07 0.10 0.15 0.20 0.30 1000 800 400 300 IF [A] 1200 Ptot [W] 0.01 t [s] TA [°C] 200 Circuit B6 600 400 100 200 0 0 100 200 300 400 500 IdAVM [A] 600 0 25 50 75 100 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 125 150 TVJ = 125°C 0 0.0 TVJ = 25°C 0.5 1.0 1.5 2.0 VF [V] Fig. 7 Forward current versus voltage drop 20080128a 2-3 MDD 200 0.14 0.12 ZthJC [K/W] 0.10 0.08 0.06 i 1 2 3 4 5 0.04 0.02 0.00 0.001 0.01 0.1 t [s] Ri 0.01 0.0065 0.025 0.0615 0.027 1 ti 0.00014 0.019 0.18 0.52 1.6 10 Fig. 8 Transient thermal impedance junction to case IXYS reserves the right to change limits, test conditions and dimensions. © 2008 IXYS All rights reserved 20080128a 3-3