IXYS IXFV74N20P

PolarHTTM HiPerFET
Power MOSFET
IXFH 74N20P
IXFV 74N20P
IXFV 74N20PS
VDSS
ID25
RDS(on)
trr
N-Channel Enhancement Mode
Fast Recovery Diode, Avalanche
Rated
=
=
=
≤
200
74
34
200
V
A
Ω
mΩ
ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 175°C
200
V
VDGR
TJ = 25°C to 175°C; RGS = 1 MΩ
200
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
74
A
IDM
TC = 25°C, pulse width limited by TJM
200
A
IAR
TC = 25°C
60
A
EAR
TC = 25°C
40
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
480
W
-55 ... +175
175
-55 ... +150
°C
°C
°C
300
250
°C
°C
TO-247 (IXFH)
G
D
G
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
FC
Mounting Force
(PLUS220)
1.13/10 Nm/lb.in.
Md
Mounting torque
(TO-247)
1.13/10 Nm/lb.in.
Weight
TO-247
PLUS220
6.0
4.0
g
g
S
PLUS220 (IXFV)
TJ ≤ 150°C, RG = 4 Ω
PD
D (TAB)
D
D (TAB)
S
PLUS220SMD (IXFV-PS)
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Features
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
z
z
V
5.0
V
±100
nA
25
250
µA
µA
34
mΩ
z
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99209(09/04)
IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
Symbol
Test Conditions
gfs
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
44
S
3300
pF
800
pF
190
pF
23
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
21
ns
td(off)
RG = 4 Ω (External)
60
ns
21
ns
107
nC
24
nC
52
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
TO-247 (IXFH) Outline
1
(TO-247, PLUS220)
0.21
Source-Drain Diode
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Symbol
Test Conditions
IS
VGS = 0 V
74
A
ISM
Repetitive
180
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A, -di/dt = 100 A/µs
120
VR = 100 V
QRM
µC
6
A
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
PLUS220 (IXFV) Outline
E
E1
A
A1
L2
200 ns
0.4
IRM
3
Terminals: 1 - Gate
0.31 K/W
RthCK
2
E1
D1
D
L3
L1
PLUS220SMD (IXFV-PS) Outline
E
E1
A
A1
L2
L
E1
2X e
3X b
c
A2
Terminals: 1-Gate 2-Drain
D
A
A1
A2
A3
b
c
D
D1
E
E1
e
L
L1
L2
L3
L4
A3
L3
L4
L
L1
2X b
e
c
A2
Terminals: 1-Gate 2-Drain
A
A1
A2
b
c
D
D1
E
E1
e
L
L1
L2
L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
Fig. 2. Extended Output Characteristics
@ 25ºC
Fig. 1. Output Characteristics
@ 25ºC
200
80
VGS = 10V
70
9V
160
140
50
I D - Amperes
I D - Amperes
60
VGS = 10V
180
9V
8V
7V
40
30
6V
20
8V
120
7V
100
80
60
6V
40
10
5V
20
5V
0
0
0
0.5
1
1.5
2
2.5
3
0
3.5
2
4
6
Fig. 3. Output Characteristics
@ 150ºC
12
14
16
18
20
3
VGS = 10V
70
VGS = 10V
9V
8V
2.6
R D S ( o n ) - Normalized
60
I D - Amperes
10
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Tem perature
80
7V
50
40
6V
30
20
2.2
I D = 74A
1.8
I D = 37A
1.4
1
5V
10
0
0.6
0
1
2
3
4
5
6
-50
7
-25
0
V D S - Volts
0.5 ID25 Value vs. ID
5
75
100
125
150
175
70
4
60
3
VGS = 10V
2.5
2
VGS = 15V
I D - Amperes
TJ = 175ºC
3.5
1.5
50
Fig. 6. Drain Current vs. Case
Tem perature
80
VGS = 10V
4.5
25
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to
R D S ( o n ) - Normalized
8
V D S - Volts
V D S - Volts
50
40
30
20
1
TJ = 25ºC
10
0
0.5
0
20
40
60
80
100 120 140 160 180 200
I D - Amperes
© 2004 IXYS All rights reserved
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
60
100
90
50
80
60
50
40
30
TJ = 150ºC
20
25ºC
-40ºC
TJ = -40ºC
40
g f s - Siemens
I D - Amperes
70
25ºC
150ºC
30
20
10
10
0
0
3.5
4
4.5
5
5.5
6
6.5
0
7
20
40
V G S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
160
140
VG S - Volts
I S - Amperes
100
120
Fig. 10. Gate Charge
180
120
100
80
9
VDS = 100V
8
I D = 37A
7
I G = 10mA
6
5
4
3
TJ = 150ºC
40
2
TJ = 25ºC
1
20
0
0
0.4
0.6
0.8
1
V S D - Volts
1.2
0
1.4
10
20
30
40
50
60
70
80
90 100 110
Q G - nanoCoulombs
Fig. 12. Forw ard-Bias
Safe Operating Area
Fig. 11. Capacitance
10000
1000
f = 1MHz
TJ = 175ºC
C iss
R DS(on) Limit
I D - Amperes
Capacitance - picoFarads
80
10
200
60
60
I D - Amperes
C oss
1000
TC = 25ºC
25µs
100
100µs
1ms
10ms
10
DC
C rss
100
1
0
5
10
15
20
25
V D S - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFH 74N20P IXFV 74N20P
IXFV 74N20PS
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Puls e W idth - millis ec onds
© 2004 IXYS All rights reserved
1000