IXYS IXFH120N20P

Advanced Technical Information
PolarHTTM HiPerFET IXFH 120N20P
IXFK 120N20P
Power MOSFET
VDSS = 200 V
ID25 = 120 A
Ω
RDS(on) ≤ 22 mΩ
≤ 140 ns
trr
N-Channel Enhancement Mode
Avalanche Rated, Fast Intrinsic
Diode
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
200
200
V
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
ID(RMS)
External lead current limit
IDM
TC = 25°C, pulse width limited by TJM
IAR
120
A
75
A
300
A
TC = 25°C
60
A
EAR
TC = 25°C
60
mJ
EAS
TC = 25°C
2.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
10
V/ns
714
W
TJ ≤ 175°C, RG = 4 Ω
PD
TC = 25°C
-55 ... +175
°C
TJM
175
°C
Tstg
-55 ... +175
°C
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247
TO-264
°C
300
1.13/10 Nm/lb.in.
6
10
TO-247 (IXFH)
G
S
D (TAB)
D
TO-264 (IXFK)
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
z
z
g
g
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 µA
200
VGS(th)
VDS = VGS, ID = 250µA
2.5
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
TJ = 175°C
V
5.0
V
±100
nA
25
500
µA
µA
22
mΩ
z
z
z
Easy to mount
Space savings
High power density
DS99223(10/04)
IXFH 120N20P
IXFK 120N20P
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS= 10 V; ID = 0.5 ID25, pulse test
40
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
63
S
6000
pF
1300
pF
265
pF
30
ns
35
ns
100
ns
31
ns
152
nC
40
nC
75
nC
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
td(off)
RG = 3.3 Ω (External)
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
TO-247 (IXFH) Outline
1
0.21
0.15
Source-Drain Diode
Dim.
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
typ.
Max.
Test Conditions
IS
VGS = 0 V
120
A
ISM
Repetitive
300
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
t rr
IF = 25 A, -di/dt = 100 A/µs
QRM
VR = 100 V
IRM
100
140 ns
0.4
µC
6.0
A
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
IXYS reserves the right to change limits, test conditions, and dimensions.
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
TO-264 (IXFK)
Dim.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
2 - Drain
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
K/W
K/W
Symbol
3
Terminals: 1 - Gate
0.21 K/W
TO-247
TO-264
2
6,683,344
6,710,405B2
6,710,463
6,727,585
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXFH 120N20P
IXFK 120N20P
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
270
120
VGS = 10V
9V
8V
80
60
7V
40
180
150
8V
120
90
7V
60
6V
20
9V
210
I D - Amperes
I D - Amperes
100
VGS = 10V
240
6V
30
5V
0
0
0
0.5
1
1.5
2
0
2.5
2
4
6
Fig. 3. Output Characteristics
@ 150ºC
8
10
V D S - Volts
V D S - Volts
12
14
16
Fig. 4. RDS(on) Norm alized to 0.5 ID25
Value vs. Junction Te m perature
120
VGS = 10V
9V
8V
3
R D S ( o n ) - Normalized
I D - Amperes
100
80
7V
60
6V
40
20
VGS = 10V
2.5
I D = 120A
2
I D = 60A
1.5
1
5V
0
0.5
0
1
2
3
V D S - Volts
4
5
6
-50
Fig. 5. RDS(on) Norm alized to 0.5 ID25
Value vs. Drain Current
0
25
50
75
100
125
TJ - Degrees Centigrade
150
175
Fig. 6. Drain Current vs. Case
Tem perature
90
4
TJ = 175ºC
External Lead Current Limit
80
3.5
70
3
2.5
VGS = 10V
VGS = 15V
2
I D - Amperes
R D S ( o n ) - Normalized
-25
60
50
40
30
1.5
20
1
TJ = 25ºC
10
0
0.5
0
30
60
90
120 150 180 210 240 270 300
I D - Amperes
© 2004 IXYS All rights reserved
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
150
175
IXFH 120N20P
IXFK 120N20P
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
90
180
80
150
120
g f s - Siemens
I D - Amperes
70
90
60
TJ = 150ºC
30
-40ºC
25ºC
60
50
TJ = -40ºC
40
25ºC
150ºC
30
20
10
0
0
4
4.5
5
5.5
6
6.5
7
7.5
8
0
8.5
30
60
V G S - Volts
Fig. 9. Source Curre nt vs.
Source -To-Drain Voltage
120
180
210
10
VDS = 100V
9
300
I D = 60A
8
250
I G = 10mA
VG S - Volts
7
200
150
6
5
4
3
100
TJ = 150ºC
2
50
TJ = 25ºC
1
0
0
0.4
0.6
0.8
1
V S D - Volts
1.2
1.4
0
1.6
20
40
60
80
100
120
Q G - nanoCoulombs
140
160
Fig. 12. Forw ard-Bias
Safe Operating Are a
Fig. 11. Capacitance
100,000
1000
TJ = 175ºC
f = 1MHz
TC = 25ºC
R DS(on) Limit
Ciss
10,000
I D - Amperes
Capacitance - picoFarads
150
Fig. 10. Gate Charge
350
I S - Amperes
90
I D - Amperes
Coss
25µs
100
100µs
1,000
1ms
Crss
10ms
DC
100
10
0
5
10
15
20
25
V DS - Volts
30
35
40
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
V D S - Volts
1000
IXFH 120N20P
IXFK 120N20P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
R( t h ) J C - ºC / W
1.00
0.10
0.01
1
10
100
Pu ls e W id th - m illis e c o n d s
© 2004 IXYS All rights reserved
1000