Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 VDSS ID25 = 250 V = 87 A Ω = 27 mΩ RDS(on) (Electrically Isolated Backside) trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IL(RMS) IDM IAR TC TC TC TC 87 75 400 100 A A A A EAR EAS TC = 25°C TC = 25°C 64 3 mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω 5 V/ns PD TC = 25°C 400 W -55 ... +150 150 -55 ... +150 °C °C °C 300 °C 2500 V~ 5 g = 25°C (MOSFET chip capability) = External lead current limit = 25°C, Note 1 = 25°C TJ TJM Tstg TL 1.6 mm (0.063 in.) from case for 10 s VISOL 50/60 Hz, RMS t = 1 min ISOPLUS 247TM E153432 Isolated backside* G = Gate S = Source * Patent pending Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l l Weight D = Drain Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure l Rated for Unclamped Inductive Load Switching (UIS) l Fast intrinsic Rectifier Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Applications l DC-DC converters l l VDSS VGS = 0 V, ID = 3mA 250 V VGS(th) VDS = VGS, ID = 8mA 2.0 4 V l IGSS VGS = ±20 V, VDS = 0 ±200 nA l IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = IT Notes 2, 3 © 2001 IXYS All rights reserved TJ = 25°C TJ = 125°C 100 µA 2 mA 27 mΩ Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages l Easy assembly l l Space savings High power density 98840 (5/01) IXFR 100N25 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs V DS = 10 V; ID = IT Notes 2, 3 40 70 S 9100 pF 1800 pF Crss 600 pF td(on) 42 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = IT td(off) RG = 1 Ω (External), Notes 2, 3 tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = IT Notes 2, 3 Qgd 55 ns 110 ns 40 ns 300 nC 57 nC 160 nC 0.3 RthJC K/W 0.15 RthCK Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS V GS = 0 V 100 A ISM Repetitive; Note 1 400 A VSD IF = IT, VGS = 0 V, Notes 2, 3 1.5 V 250 ns t rr QRM ISOPLUS 247 OUTLINE IF = 50A,-di/dt = 100 A/µs, VR = 100 V IRM 1.4 µC 10 A Note: 1. Pulse width limited by TJM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 3. IT = 50 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025