IXYS IXLF19N250A

IXLF 19N250A
IC25 = 32 A
VCES = 2500 V
VCE(sat) = 3.2 V
tf
= 250 ns
High Voltage IGBT
in High Voltage
ISOPLUS i4-PACTM
5
1
1
2
5
2
Features
IGBT
Conditions
VCES
TVJ = 25°C to 150°C
Maximum Ratings
VGES
IC25
IC90
TC = 25°C
TC = 90°C
ICM
VCEK
VGE = ±15 V; RG = 47 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
Ptot
TC = 25°C
Symbol
Conditions
VCE(sat)
IC = 19 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 1 mA; VGE = VCE
ICES
VCE = VCES; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
IGES
td(on)
tr
td(off)
tf
Eon
Eoff
2500
V
± 20
V
32
19
A
A
70
1200
A
V
250
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
3.2
4.7
5
3.9
V
V
8
V
0.15
mA
mA
500
nA
0.2
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 1500 V; IC = 19 A
VGE = ±15 V; RG = 47 Ω
100
50
600
250
15
30
ns
ns
ns
ns
mJ
mJ
Cies
Coes
Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
2.28
103
43
nF
pF
pF
QGon
VCE = 1500V; VGE = 15 V; IC = 19 A
142
nC
RthJC
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
• High Voltage IGBT
- substitute for high voltage MOSFETs
with significantly lower voltage drop
and comparable switching speed
- substitute for high voltage thyristors
with voltage control of turn on & turn off
- substitute for electromechanical trigger
and discharge relays
• ISOPLUS i4-PACTM
high voltage package
- isolated back surface
- enlarged creepage towards heatsink
- enlarged creepage between high
voltage pins
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E72873
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• laser generators, x ray generators
• discharge circuits
0.5 K/W
407
Symbol
1-4
IXLF 19N250A
Component
Symbol
Dimensions in mm (1 mm = 0.0394")
Conditions
Maximum Ratings
TVJ
Tstg
VISOL
IISOL ≤ 1 mA; 50/60 Hz
FC
mounting force with clip
Symbol
Conditions
dS,dA
dS,dA
C pin - E pin
pin - backside metal
RthCH
with heatsink compound
°C
°C
2500
V~
20...120
N
Characteristic Values
min.
typ. max.
7.0
5.5
mm
mm
0.15
K/W
9
g
407
Weight
-55...+150
-55...+125
2-4
© 2004 IXYS All rights reserved
IXLF 19N250A
80
A
IC
50
VGE = 17 V
TJ = 25°C
15 V
15 V
40
IC
60
VGE = 17 V
TJ = 125°C
A
13 V
13 V
30
11 V
40
20
11 V
20
10
9V
9V
0
0
1
2
3
4
0
V
5
0
6
1
2
3
VCE
Fig. 1 Typ. Output Characteristics
5
V
Fig. 2 Typ. Output Characteristics
10000
80
VCE = 20 V
A
70
f = 1 Mhz
pF
60
Capacitance
IC
4
VCE
50
40
30
Coes
100
TJ = 125°C
20
Cies
1000
Cres
10
TJ = 25°C
10
0
6
7
8
9
10
11
12
13
0
14 V 15
10
20
V
30
40
VCE
VGE
Fig. 3 Typ. Transfer Characteristics
Fig. 4 Capacitance curves
80
20
V
A
VCE = 1500 V
IC = 19 A
TJ = 25°C
15
VGE
ICM
60
10
40
5
20
RG = 47Ω
TJ = 125°C
VCEK < VCES
0
0
0
50
100
QG
150
nC
400
800 1200 1600 2000 2400 V
VCE
Fig. 6 Reverse Biased Safe Operating Area
RBSOA
407
Fig. 5 Typ. Gate Charge characteristics
0
© 2004 IXYS All rights reserved
3-4
IXLF 19N250A
50
60
200
VCE = 1500 V
VGE = ±15 V
mJ
40
ns
160
RG = 47 Ω
TJ = 125°C
Eon
t
tr
30
Eoff
mJ
50
VCE = 1500 V
VGE = ±15 V
40
RG = 47 Ω
TJ = 125°C
120
td(on)
20
1200
ns
1000
800 t
30
600
td(off)
80
20
10
40
Eon
0
0
0
10
20
30
40
10
tf
Eoff
0
A
10
20
IC
35
mJ
30
Eon 25
350
ns
300
td(on)
VCE = 1500 V
VGE = ±15 V
IC = 19 A
TJ = 125°C
250 t
tr
20
2000
ns
mJ
Eoff
Eoff 30
100
5
1500
VCE = 1500 V
VGE = ±15 V
IC = 19 A
TJ = 125°C
150
Eon
0
0
50
100
150
200
Ω 250
RG
t
td(off)
1000
10
500
tf
50
0
40 A
40
20
10
30
IC
Fig. 8 Typ. turn off energy and switching
times versus collector current
200
15
200
0
0
Fig. 7 Typ. turn on energy and switching
times versus collector current
400
0
0
0
50
100
150
200
Ω 250
RG
Fig. 9 Typ. turn on energy and switching
times versus gate resistor
Fig. 10 Typ. turn off energy and switching
times versus gate resistor
1
K/W
ZthJC
0.1
single pulse
0.01
0.001
0.01
IXLF19N250A
0.1
1
s 10
t
407
Fig. 11 Typ. transient thermal impedance
4-4
© 2004 IXYS All rights reserved