IXLF 19N250A IC25 = 32 A VCES = 2500 V VCE(sat) = 3.2 V tf = 250 ns High Voltage IGBT in High Voltage ISOPLUS i4-PACTM 5 1 1 2 5 2 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 47 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH Ptot TC = 25°C Symbol Conditions VCE(sat) IC = 19 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 1 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 2500 V ± 20 V 32 19 A A 70 1200 A V 250 W Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 3.2 4.7 5 3.9 V V 8 V 0.15 mA mA 500 nA 0.2 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 1500 V; IC = 19 A VGE = ±15 V; RG = 47 Ω 100 50 600 250 15 30 ns ns ns ns mJ mJ Cies Coes Cres VCE = 25 V; VGE = 0 V; f = 1 MHz 2.28 103 43 nF pF pF QGon VCE = 1500V; VGE = 15 V; IC = 19 A 142 nC RthJC IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved • High Voltage IGBT - substitute for high voltage MOSFETs with significantly lower voltage drop and comparable switching speed - substitute for high voltage thyristors with voltage control of turn on & turn off - substitute for electromechanical trigger and discharge relays • ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline - UL registered E72873 Applications • switched mode power supplies • DC-DC converters • resonant converters • laser generators, x ray generators • discharge circuits 0.5 K/W 407 Symbol 1-4 IXLF 19N250A Component Symbol Dimensions in mm (1 mm = 0.0394") Conditions Maximum Ratings TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz FC mounting force with clip Symbol Conditions dS,dA dS,dA C pin - E pin pin - backside metal RthCH with heatsink compound °C °C 2500 V~ 20...120 N Characteristic Values min. typ. max. 7.0 5.5 mm mm 0.15 K/W 9 g 407 Weight -55...+150 -55...+125 2-4 © 2004 IXYS All rights reserved IXLF 19N250A 80 A IC 50 VGE = 17 V TJ = 25°C 15 V 15 V 40 IC 60 VGE = 17 V TJ = 125°C A 13 V 13 V 30 11 V 40 20 11 V 20 10 9V 9V 0 0 1 2 3 4 0 V 5 0 6 1 2 3 VCE Fig. 1 Typ. Output Characteristics 5 V Fig. 2 Typ. Output Characteristics 10000 80 VCE = 20 V A 70 f = 1 Mhz pF 60 Capacitance IC 4 VCE 50 40 30 Coes 100 TJ = 125°C 20 Cies 1000 Cres 10 TJ = 25°C 10 0 6 7 8 9 10 11 12 13 0 14 V 15 10 20 V 30 40 VCE VGE Fig. 3 Typ. Transfer Characteristics Fig. 4 Capacitance curves 80 20 V A VCE = 1500 V IC = 19 A TJ = 25°C 15 VGE ICM 60 10 40 5 20 RG = 47Ω TJ = 125°C VCEK < VCES 0 0 0 50 100 QG 150 nC 400 800 1200 1600 2000 2400 V VCE Fig. 6 Reverse Biased Safe Operating Area RBSOA 407 Fig. 5 Typ. Gate Charge characteristics 0 © 2004 IXYS All rights reserved 3-4 IXLF 19N250A 50 60 200 VCE = 1500 V VGE = ±15 V mJ 40 ns 160 RG = 47 Ω TJ = 125°C Eon t tr 30 Eoff mJ 50 VCE = 1500 V VGE = ±15 V 40 RG = 47 Ω TJ = 125°C 120 td(on) 20 1200 ns 1000 800 t 30 600 td(off) 80 20 10 40 Eon 0 0 0 10 20 30 40 10 tf Eoff 0 A 10 20 IC 35 mJ 30 Eon 25 350 ns 300 td(on) VCE = 1500 V VGE = ±15 V IC = 19 A TJ = 125°C 250 t tr 20 2000 ns mJ Eoff Eoff 30 100 5 1500 VCE = 1500 V VGE = ±15 V IC = 19 A TJ = 125°C 150 Eon 0 0 50 100 150 200 Ω 250 RG t td(off) 1000 10 500 tf 50 0 40 A 40 20 10 30 IC Fig. 8 Typ. turn off energy and switching times versus collector current 200 15 200 0 0 Fig. 7 Typ. turn on energy and switching times versus collector current 400 0 0 0 50 100 150 200 Ω 250 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor Fig. 10 Typ. turn off energy and switching times versus gate resistor 1 K/W ZthJC 0.1 single pulse 0.01 0.001 0.01 IXLF19N250A 0.1 1 s 10 t 407 Fig. 11 Typ. transient thermal impedance 4-4 © 2004 IXYS All rights reserved