MWI 50-12 A7 MWI 50-12 A7T IC25 = 85 A = 1200 V VCES VCE(sat) typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type: NTC - Option: MWI 50-12 A7 MWI 50-12 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7 8 11 12 T 17 IGBTs Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate ● Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC80 TC = 25°C TC = 80°C RBSOA VGE = ±15 V; RG = 22 W; TVJ = 125°C Clamped inductive load; L = 100 µH 1200 V ± 20 V 85 60 A A ● ● ● ● ● ● ● ICM = 100 VCEK £ VCES tSC (SCSOA) VCE = VCES; VGE = ±15 V; RG = 22 W; TVJ = 125°C non-repetitive Ptot TC = 25°C A ● ● ● 10 µs Advantages 350 W ● ● Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.2 2.5 2.7 V V ● Typical Applications ● ● VGE(th) IC = 2 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C IGES td(on) tr td(off) tf Eon Eoff 4.5 6.5 V 4 mA mA 200 nA 3 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22 W 100 70 500 70 7.6 5.6 ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 50 A 3300 230 pF nC RthJC (per IGBT) IXYS reserves the right to change limits, test conditions and dimensions. © 2000 IXYS All rights reserved space savings reduced protection circuits package designed for wave soldering ● AC motor control AC servo and robot drives power supplies 0.35 K/W 023 Symbol 1-4 MWI 50-12 A7 MWI 50-12 A7T Diodes Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 110 70 Symbol Conditions Characteristic Values min. typ. max. VF IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.2 1.6 IRM trr IF = 50 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 40 200 RthJC (per diode) Conduction A A 2.6 1.8 V V A ns 0.61 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 20.7 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 11.3 mW Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions Characteristic Values min. typ. max. R25 B25/50 T = 25°C 4.75 5.0 3375 5.25 kW K Module Symbol Conditions Maximum Ratings TVJ Tstg -40...+150 -40...+125 °C °C VISOL IISOL £ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions 5 Creepage distance on surface Strike distance in air RthCH with heatsink compound Weight Free Wheeling Diode (typ.) Cth1 = 0.16 J/K; Rth1 = 0.483 K/W Cth2 = 1.37 J/K; Rth2 = 0.127 K/W Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. Rpin-chip dS dA IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W 6 6 mW mm mm 0.02 K/W 180 g Higher magnification see outlines.pdf © 2000 IXYS All rights reserved 2-4 MWI 50-12 A7 MWI 50-12 A7T 120 TJ = 25°C A 100 120 A 100 VGE=17V 15V IC 13V VGE=17V TJ = 125°C 15V IC 80 13V 80 11V 11V 60 60 40 40 9V 9V 20 20 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 120 A 100 IC 2.5 3.0 VCE Fig. 2 Typ. output characteristics 180 VCE = 20V TJ = 125°C TJ = 25°C A 150 IF 80 TJ = 25°C 120 60 90 40 60 20 30 0 0 5 6 7 8 9 10 0 11 V 1 2 3 Fig. 3 Typ. transfer characteristics 20 V 4 V VF VGE VGE 3.5 V Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 VCE = 600V IC = 50A A 15 ns trr IRM trr 200 80 10 40 5 0 TJ = 125°C VR = 600V IF = 50A IRM MWI50-12A7 0 0 50 100 150 200 250 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 100 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MWI 50-12 A7 MWI 50-12 A7T Eon 24 120 mJ ns 18 12 mJ 10 90 td(on) t 12 Eoff RG = 22W TJ = 125°C Eon 0 20 40 60 80 4 2 mJ Eon 15 0 0 20 40 60 80 100 A IC Fig. 8 Typ. turn off energy and switching times versus collector current 10 240 td(on) ns 180 Eon 10 mJ 8 t Eoff 1500 td(off) VCE = 600V VGE = ±15V IC = 50A TJ = 125°C ns 1200 Eoff t 6 900 4 600 2 300 120 tr 5 60 0 0 0 10 20 30 40 50 60 70 80 90 100 RG W 120 A 100 tf 0 0 10 20 30 40 50 60 70 80 90 100 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 100 tf 0 100 A Fig. 7 Typ. turn on energy and switching times versus collector current VCE = 600V VGE = ±15V IC = 50A TJ = 125°C 200 RG = 22W TJ = 125°C IC 20 300 VCE = 600V VGE = ±15V 30 0 0 400 t 6 VCE = 600V VGE = ±15V 6 Eoff ns 500 td(off) 8 60 tr 600 W 0 Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 80 ZthJC RG = 22W TJ = 125°C VCEK < VCES 60 diode 0.01 IGBT 0.001 40 0.0001 20 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved single pulse 0.00001 0.00001 0.0001 MWI50-12A7 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4