MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE(sat) typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW VGES VGEM 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Maximum Ratings 1200 1200 V V Continuous Transient ±20 ±30 V V IC25 IC80 ICM TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms 160 110 220 A A A tSC (SCSOA) VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 6.8 W, non repetitive 10 ms RBSOA VGE = ±15 V, TJ = 125°C, RG = 6.8 W Clamped inductive load, L = 100 mH ICM = 200 VCEK < VCES A Ptot TC = 25°C 700 W 150 °C -40 ... +150 °C 4000 4800 V~ V~ Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873 ● ● ● ● ● ● ● ● ● ● ● ● Advantages ● TJ Tstg VISOL 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 ● Typical Applications ● ● Md Mounting torque (module) (teminals) 2.25-2.75 20-25 2.5-3.7 22-33 Nm lb.in. Nm lb.in. dS dA a Creepage distance on surface Strike distance through air Max. allowable acceleration 12.7 9.6 50 mm mm m/s2 Weight Typical 130 4.6 g oz. space and weight savings reduced protection circuits ● ● AC and DC motor control AC servo and robot drives power supplies welding inverters 030 Data according to a single IGBT/FRED unless otherwise stated. © 2000 IXYS All rights reserved 1-4 MII 145-12 A3 Symbol Conditions V(BR)CES VGE = 0 V VGE(th) IC = 4 mA, VCE = VGE ICES VCE = VCES IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 100 A, VGE = 15 V Cies Coes Cres td(on) tr td(off) tf Eon Eoff RthJC RthJS Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 Dimensions in mm (1 mm = 0.0394") V 4.5 TJ = 25°C TJ = 125°C MID 145-12 A3 MDI 145-12 A3 6.5 9 V 6 mA mA ±400 nA 2.2 VCE = 25 V, VGE = 0 V, f = 1 MHz Inductive load, TJ = 125°C IC = 100 A, VGE = ±15 V VCE = 600 V, RG = 6.8 W with heatsink compound 2.7 V 6.5 1 0.5 nF nF nF 100 60 600 90 16 15 ns ns ns ns mJ mJ 0.36 0.18 K/W K/W Equivalent Circuits for Simulation Reverse Diode (FRED) Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VF IF = 100 A, VGE = 0 V, IF = 100 A, VGE = 0 V, TJ = 125°C IF TC = 25°C TC = 80°C IRM trr IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms TJ = 125°C, VR = 600 V RthJC RthJS with heatsink compound 2.4 1.9 2.6 2.0 V V 150 95 A A 62 200 A ns 0.9 0.45 K/W K/W Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.3 V; R0 = 12.0 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 6.5 mW Thermal Response IGBT (typ.) Cth1 = 0.25 J/K; Rth1 = 0.175 K/W Cth2 = 0.58 J/K; Rth2 = 0.004 K/W Free Wheeling Diode (typ.) Cth1 = 0.14 J/K; Rth1 = 0.443 K/W Cth2 = 0.26 J/K; Rth2 = 0.009 K/W © 2000 IXYS All rights reserved 2-4 MII 145-12 A3 250 MID 145-12 A3 MDI 145-12 A3 250 TJ = 25°C A 200 15V 13V IC 150 TJ = 125°C A VGE=17V VGE=17V 200 15V IC 13V 150 11V 11V 100 100 9V 9V 50 0 0.0 0.5 1.0 1.5 2.0 2.5 50 0 0.0 3.0 V 0.5 1.0 1.5 2.0 VCE Fig. 1 Typ. output characteristics 2.5 3.0 VCE 3.5 V Fig. 2 Typ. output characteristics 300 250 VCE = 20V A TJ = 125°C TJ = 25°C 200 A 250 TJ = 25°C IF IC 200 150 150 100 100 50 50 0 0 5 6 7 8 9 10 0 11 V 1 2 3 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 300 120 20 V VGE 4 V VF VGE VCE = 600V IC = 100A A ns IRM 15 trr trr 200 80 10 40 TJ = 125°C VR = 600V IF = 100A IRM 5 100 145-12 0 0 0 100 200 300 400 500 nC QG Fig. 5 Typ. turn on gate charge © 2000 IXYS All rights reserved 0 200 400 800 A/ms 600 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 3-4 MII 145-12 A3 40 td(on) mJ Eon 30 120 40 ns mJ 90 Eon tr 20 t 10 800 ns td(off) Eoff 30 60 20 RG = 6.8W 30 TJ = 125°C 10 VCE = 600V VGE = ±15V MID 145-12 A3 MDI 145-12 A3 600 Eoff t 400 VCE = 600V VGE = ±15V RG = 6.8W 200 TJ = 125°C tf 0 0 0 0 50 100 150 IC Fig. 7 Typ. turn on energy and switching times versus collector current 50 Eon VCE = 600V VGE = ±15V IC = 100A TJ = 125°C mJ 40 Eon td(on) tr 30 0 0 200 A 50 100 200 A Fig. 8 Typ. turn off energy and switching times versus collector current 300 25 ns mJ 240 20 t td(off) VCE = 600V VGE = ±15V IC = 100A TJ = 125°C Eoff 1500 ns 1200 Eoff t 180 15 900 20 120 10 600 10 60 5 300 0 0 8 16 24 32 40 48 W tf 0 0 56 0 8 16 24 RG 240 A 200 32 40 48 0 W 56 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor ICM 150 IC Fig.10 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 ZthJC 160 RG = 6.8W TJ = 125°C VCEK < VCES 120 diode 0.01 IGBT 0.001 80 0.0001 40 0 0 200 400 600 800 1000 1200 V VCE Fig. 11 Reverse biased safe operating area RBSOA © 2000 IXYS All rights reserved single pulse 0.00001 0.00001 0.0001 145-12 0.001 0.01 0.1 s 1 t Fig. 12 Typ. transient thermal impedance 4-4