IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE(sat) typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH tSC (SCSOA) VCE = 900V; VGE = ±15 V; RG = 68 Ω; TVJ = 125°C non-repetitive Ptot TC = 25°C V ± 20 V 36 24 A A 60 VCES A 10 µs 200 W a s e IC25 IC90 Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 0.6 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C p h Symbol Cies QGon 1200 -o VGES td(on) tr td(off) tf Eon Eoff C (TAB) Features IGBT IGES E 2.6 3.2 4.5 3.2 V V 6.5 V 0.2 mA mA 200 nA 0.2 VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 68 Ω 205 105 320 175 4.1 1.5 ns ns ns ns mJ mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 20 A 1.2 100 nF nC Applications • AC drives • DC drives and choppers • Uninteruptible power supplies (UPS) • switched-mode and resonant-mode power supplies • inductive heating, cookers 0.63 K/W 0549 RthJC • NPT3 IGBT - positive temperature coefficient of saturation voltage for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits • optional HiPerFREDTM diode - fast reverse recovery - low operating forward voltage - low leakage current • TO-247 package - industry standard outline - epoxy meets UL 94V-0 © 2005 IXYS All rights reserved 1-4 IXEH 25N120 IXEH 25N120D1 Diode [D1 version only] Equivalent Circuits for Simulation Symbol Conditions Maximum Ratings IF25 IF90 TC = 25°C TC = 90°C 31 19 Symbol Conditions Characteristic Values min. typ. max. VF IF = 25 A; TVJ = 25°C TVJ = 125°C IRM t rr IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 2.7 2.1 A A 3.2 V V 16 130 A ns RthJC IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.09 V; R0 = 85 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 32 mΩ Thermal Response 1.6 K/W t Component Conditions Maximum Ratings u Symbol Conduction TVJ Tstg mounting torque Symbol Conditions RthCH with heatsink compound °C °C 0.8...1.2 Nm -o Md -55...+150 -55...+150 s Weight e Characteristic Values min. typ. max. K/W 6 g Free Wheeling Diode (typ.) Cth1 = 0.004 J/K; Rth1 = 1.076 K/W Cth2 = 0.078 J/K; Rth2 = 0.524 K/W Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0549 p h a TO-247 AD Outline 0.25 IGBT (typ.) Cth1 = 0.004 J/K; Rth1 = 0.335 K/W Cth2 = 0.133 J/K; Rth2 = 0.295 K/W © 2005 IXYS All rights reserved 2-4 IXEH 25N120 IXEH 25N120D1 80 60 A 50 VGE = 17 V A IC 15 V 60 VGE = 17 V IC 15 V TVJ = 125°C 13 V 40 TVJ = 25°C 13 V 40 30 11 V 11 V 20 20 9V 9V 10 0 0 0 1 2 3 4 0 V 6 5 1 2 3 4 VCE Fig. 1 Typ. output characteristics 6 V Fig. 2 Typ. output characteristics t 50 80 VCE = 20 V A 40 A u IC 5 VCE IF 60 30 -o TVJ = 25°C 40 TVJ = 125°C 5 10 0 s 0 15 V 0 20 p V VCE = 600 V IC = 20 A 12 IRM VGE 2 3 V 4 Fig. 4 Typ. forward characteristics of free wheeling diode h Fig. 3 Typ. transfer characteristics 15 1 VF a VGE TVJ = 25°C 10 e 20 0 TVJ = 125°C 20 40 200 A ns 150 30 trr trr 9 100 20 6 TVJ = 125°C VR = 600 V IF = 15 A 10 3 50 IRM FII30-12E 0 0 0 20 40 60 80 nC 100 QG 200 400 600 800 A/µs 0 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode 0549 Fig. 5 Typ. turn on gate charge 0 © 2005 IXYS All rights reserved 3-4 IXEH 25N120 IXEH 25N120D1 20 4.0 250 td(on) mJ 16 ns 150 R G = 68 Ω TVJ = 125°C 8 E off 3.0 t V CE = 600 V V GE = ±15 V 12 3.5 mJ 200 tr E on 100 4 400 td(off) 300 2.5 V CE = 600 V V GE = ±15 V 250 2.0 R G = 68 Ω T VJ = 125°C 200 1.5 100 E off 0.5 Eon 0 10 20 30 A 0 40 10 20 30 IC Fig. 8 Typ. turn off energy and switching times versus collector current mJ mJ 8 E off 2.0 6 1.5 1250 0 0 50 100 200 Ω 250 150 500 0.5 250 tf 0.0 0 100 0 200 Ω 250 150 Fig.10 Typ. turn off energy and switching times versus gate resistor K/W Z thJC diode R G = 68 Ω TVJ = 125°C 40 50 RG a h 60 t 750 10 p ICM td(off) 1.0 Fig. 9 Typ. turn on energy vs gate resistor A 1000 Eoff s RG 80 ns -o e V CE = 600 V V GE = ±15 V IC = 20 A T VJ = 125°C 2 V CE = 600 V V GE = ±15 V IC = 20 A TVJ = 125°C t 2.5 u 10 4 0 40 A IC Fig. 7 Typ. turn on energy and switching times versus collector current Eon 50 tf 0.0 0 0 t 150 1.0 50 ns 350 1 IGBT 20 single pulse 0 IXEH 25N120 0.1 0 200 400 600 800 1000 1200 V VCE 10 100 1000 t ms 10000 Fig. 12 Typ. transient thermal impedance 0549 Fig. 11 Reverse biased safe operating area RBSOA 1 © 2005 IXYS All rights reserved 4-4