TRANSISTOR (NPN) Power dissipation PCM: 0.2 Collector current W (Tamb=25 ) 1. BASE ICM: 0.1 A Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range TJ,Tstg: -55 2. EMITTER 3. COLLECTOR to +150 V(BR)CBO Ic=50µA,IE=0 50 V V(BR)CEO Ic= 1mA,IB=0 50 V V(BR)EBO IE=50µA,IC=0 5 V ICBO VCB=50V,IE=0 0.5 uA IEBO VEB=4V,IC=0 0.5 uA hFE VCE=5V,IC=1mA VCE(sat) IC=10mA,IB=1mA fT VCE=10V,IC=5mA, f=100MHz R1 100 250 600 0.3 250 7 10 V MHz 13 k