@vic SOT-23 Plastic-Encapsulate Transistors MMBT5551LT1 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.6 A Collector-base voltage 180 V V(BR)CBO: Operating and storage junction temperature range 0. 95 0.3 1. 9 PCM: 1. 0 Power dissipation TJ, Tstg: -55℃ to +150℃ Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA, IE=0 180 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 160 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 6 V Collector cut-off current ICBO VCB=180V, IE=0 0.1 µA Emitter cut-off current IEBO VEB= 4V, IC=0 0.1 µA hFE(1) VCE= 5V, IC= 1mA 80 hFE(2) VCE= 5V, IC=10mA 80 hFE(3) VCE= 5V, IC=50mA 30 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.5 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 1 V fT VCE=10V, IC= 10mA, f=100MHz DC current gain Transition frequency DEVICE MARKING MMBT5551LT1=G1 80 250 MHz