Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 3. BASE . 1 2 3 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA, IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 4 V Collector cut-off current ICBO VCB= 30V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=3V , 0.1 µA DC current gain hFE VCE=6 V, IC= 1mA VCE(sat) IC=10 mA, IB= 1 mA 0.3 V Base-emitter voltage VBE(ON) VCE=6 V, IC= 1mA 0.72 V Transition frequency fT VCE=6 V, IC= 1mA Collector output capacitance Cob VCE=6V, IE=0, f=1MHz 1.5 pF Noise figure NF VCE=6V, IC=1mA, f=100MHz, RS=50Ω 5 dB Power gain GP VCE=6V,IC=1mA,f=100MHz Collector-emitter saturation voltage IC=0 40 180 400 MHz 18 dB CLASSIFICATION OF hFE(1) Rank Range Y GR BL 40-80 60-120 90-180