RoHS BC369 BC369 TRANSISTOR (PNP) D T ,. L TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range 3. BASE IC TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ R T Parameter Symbol Collector-base breakdown voltage V(BR)CBO C E L O N C O 1 2 3 unless otherwise specified) Test conditions MIN MAX UNIT Ic= -100µA, IE=0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , IB=0 -20 V Emitter-base breakdown voltage V(BR)EBO IE= -100µA, IC=0 -5 V ICBO VCB= -25V, IE=0 -10 µA IEBO VEB= -5V, IC=0 -10 µA hFE VCE=-1V, IC= -0.5mA VCE(sat) IC= -1A, IB= -100mA -0.5 V VBE(on) IC= -1A , VCE= -1V -1 V Collector cut-off current Emitter cut-off current DC current gain J E E Collector-emitter voltage Base-emitter voltage W Transition frequency WEJ ELECTRONIC CO. fT VCE= -5V, IC= -10mA f =20MHz Http:// www.wej.cn 85 375 65 E-mail:[email protected] MHz