JGD 3DD13007

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13007
TRANSISTOR( NPN )
TO—220
FEATURES
Power dissipation
PCM :
2 W(Tamb=25℃)
Collector current
ICM:
8
A
Collector-base voltage
V(BR)CBO : 700 V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
1.BASE
2.COLLECTOR
123
3.EMITTER
unless
Test
otherwise
conditions
specified)
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 1mA,IE=0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic= 10m A,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 1mA,IC=0
9
V
Collector cut-off current
ICBO
VCB= 700V, IE=0
1
mA
Emitter cut-off current
IEBO
VEB= 9 V, IC=0
100
µA
hFE(1)
VCE= 5V, IC= 2 A
8
40
hFE(2)
VCE=5 V, IC=5A
5
30
Collector-emitter saturation voltage
VCE(sat)
IC=2A,IB=0.4A
1
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB= 0.4A
1.2
V
Transition frequency
fT
Ic=500mA,VCE=10V
f=1MH Z
Collector output capacitance
Cob
VCE=10,I E=0,f=0.1MHz
Fall time
tf
Vcc=125V, Ic=5A
Storage time
ts
IB1=-IB2=1A
DC current gain
4
MHZ
80
pF
0.7
µs
3
µs
CLASSIFICATION OF h FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
TO-220-3L PACKAGE OUTLINE DIMENSIONS
A
D
C1
E
E1
F
φ
L1
b1
A1
L
b
e
C
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
4.470
4.670
1.176
0.184
A1
2.520
2.820
0.099
0.111
b
0.710
0.910
0.028
0.036
b1
1.170
1.370
0.046
0.054
c
0.310
0.530
0.012
0.021
c1
1.710
1.370
0.046
0.054
D
10.010
10.310
0.394
0.406
E
8.500
8.900
0.335
0.350
E1
12.060
12.460
0.475
e
0.491
0.100TYP
2.540TYP
e1
4.980
5.180
0.196
0.204
F
2.590
2.890
0.102
0.114
L
13.400
13.800
0.528
0.543
L1
3.560
3.960
0.140
0.156
φ
3.790
3.890
0.149
0.153