JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 3DD13007 TRANSISTOR（ NPN ） TO—220 FEATURES Power dissipation PCM : 2 W（Tamb=25℃） Collector current ICM: 8 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 1.BASE 2.COLLECTOR 123 3.EMITTER unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1mA，IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10m A，IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA，IC=0 9 V Collector cut-off current ICBO VCB= 700V， IE=0 1 mA Emitter cut-off current IEBO VEB= 9 V， IC=0 100 µA hFE（1） VCE= 5V, IC= 2 A 8 40 hFE（2） VCE=5 V, IC=5A 5 30 Collector-emitter saturation voltage VCE(sat) IC=2A,IB=0.4A 1 V Base-emitter saturation voltage VBE(sat) IC=2A, IB= 0.4A 1.2 V Transition frequency fT Ic=500mA,VCE=10V f=1MH Z Collector output capacitance Cob VCE=10,I E=0，f=0.1MHz Fall time tf Vcc=125V, Ic=5A Storage time ts IB1=-IB2=1A DC current gain 4 MHZ 80 pF 0.7 µs 3 µs CLASSIFICATION OF h FE(1) Rank Range 8-15 15-20 20-25 25-30 30-35 35-40 TO-220-3L PACKAGE OUTLINE DIMENSIONS A D C1 E E1 F φ L1 b1 A1 L b e C e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 4.470 4.670 1.176 0.184 A1 2.520 2.820 0.099 0.111 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.710 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 E1 12.060 12.460 0.475 e 0.491 0.100TYP 2.540TYP e1 4.980 5.180 0.196 0.204 F 2.590 2.890 0.102 0.114 L 13.400 13.800 0.528 0.543 L1 3.560 3.960 0.140 0.156 φ 3.790 3.890 0.149 0.153