SOT-89-3L Plastic-Encapsulate Transistors KTC4379

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
KTC4379
SOT-89-3L
TRANSISTOR (NPN)
1. BASE
FEATURES
z
Low saturation voltage
z
High speed switching time
z
Complementary to KTA1666
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
500
mW
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=1mA, IE=0
50
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=10mA, IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO
IE=1mA, IC=0
5
V
Collector cut-off current
ICBO
VCB=50V, IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V, IC=0
0.1
μA
hFE(1)
VCE=2V, IC=500mA
70
hFE(2)
VCE=2V, IC=1.5A
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A, IB=50mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB=50mA
1.2
V
DC current gain
fT
Transition frequency
Collector output capacitance
Switching Time
Cob
Turn on Time
ton
Storage Time
tstg
Fall Time
240
VCE=2V, IC=500mA
120
MHz
VCB=10V, IE=0, f=1MHz
30
pF
0.1
VCC=30V, IC=1A, IB1=-IB2=-0.05A
1.0
μs
0.1
tf
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
O
Y
70-140
120-240
UO
UY
A,Jun,2011