SEMICONDUCTOR KMC6D5CN20CA TECHNICAL DATA Common N-Ch Trench MOSFET General Description This Device is a Dual N-Channel MOSFET designed for use as a bidirectional load switch, facilitated by its commom-drain configuration. It′s mainly suitable for Li-ion battery pack. C D 8 5 A E1 FEATURES 1 E B A1 4 VDSS=20V, ID=6.5A. Low Drain to Source On Resistance. DIM A A1 : RDS(ON)=24.0m (Max.) @ VGS=4.5V : RDS(ON)=25.0m (Max.) @ VGS=4.0V : RDS(ON)=27.0m (Max.) @ VGS=3.1V GAUGE PLANE : RDS(ON)=32.0m (Max.) @ VGS=2.5V ESD Protection. B MILLIMETERS 1.2 MAX 0.15 MAX _1 0.28 + C D E 0.65 Typ. _ 0.10 3.0 + _ 0.20 6.40 + E1 _ 0.10 4.40 + _ 0.20 0.50 + L Super High Dense Cell Design. 0.25 L MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain to Source Voltage VDSS Gate to Source Voltage VGSS 20 12 DC@Ta = 25℃(Note1) ID 6.5 Pulsed IDP 26 @Ta = 25℃(Note1) PD 1.5 Tj 150 Storage Temperature Range Tstg -55 150 Thermal Resistance, Junction to Ambient(Note1) RthJA 83.3 Drain Current Drain Power Dissipation Maximum Junction Temperature TSSOP-8 UNIT V V Marking Type Name A W /W KMC6D5 CN20CA Lot No. Note 1) Surface Mounted on 1″ 1″FR4 Board, t≤10sec PIN CONNECTION (TOP VIEW) D 1 8 D 1 S1 2 7 S2 2 S1 3 6 S2 3 6 G1 4 5 G2 4 5 2009. 6. 4 Revision No : 0 8 Rg Rg 7 1/4 KMC6D5CN20CA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static BVDSS VGS=0V, ID=250 A 20 - - V Drain Cut-off Current IDSS VDS=20V, VGS=0V - - 1 A Gate to Source Leakage Current IGSS VGS= 12V, VDS=0V - - 10 A Gate Threshold Voltage Vth VDS=VGS, ID=250 A 0.5 - 1.5 Drain to Source Breakdown Voltage RDS(ON) Drain to Source On Resistance VGS=4.5V, ID=3.0A (Note2) - 21.5 24.0 VGS=4.0V, ID=3.0A (Note2) - 22.5 25.0 VGS=3.1V, ID=3.0A (Note2) - 24.5 27.0 VGS=2.5V, ID=3.0A (Note2) - 28.5 32.0 - 2.5 - - 28 - - 4.6 - - 1.0 - Gate Resistance Rg f=1MHz Forward Transconductance gfs VDS=5V, ID=6.5A (Note2) V m k S Dynamic Qg Total Gate Charge VDS=10V, ID=6.5A Gate to Source Charge Qgs Gate to Drain Charge Qgd - 2.6 - Turn-On Delay Time td(on) - 1.0 - - 1.8 - - 7.0 - - 6.0 - - 0.8 1.2 tr Turn-On Rise Time td(off) Turn-Off Delay Time VGS=4.0V (Note2) VDS=10V, VGS=4.0V ID=4.0A, RG=6 (Note2) tf Turn-Off Fall Time nC s Source to Drain Diode Ratings Source to Drain Diode Forward Voltage Note2) Pulse test : Pulse width 300 2009. 6. 4 VSD VGS=0V, IS=1.7A (Note2) V , Duty Cycle 2%. Revision No : 0 2/4 KMC6D5CN20CA Fig 2. RDS(ON) - ID Fig 1. ID - VDS 50 VGS=4.5,4.0,3.1V Drain to Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 30 2.5V 24 18 12 2.0V 6 0 VGS=2.5V 30 0.5 1 1.5 2 2.5 3 VGS=4.5V 20 10 0 0 0 6 24 Fig 3. ID - VGS Fig 4. RDS(ON) - Tj Normalized On-Resistance RDS(ON) 24 18 12 25 C 6 Tj=-55 C 0 0 1 2 3 4 30 2.0 1.8 1.6 1.4 VGS=4.5V, ID=3A 1.2 VGS=2.5V, ID=3A 1.0 0.8 0.6 0.4 -75 -50 -25 Gate to Source Voltage VGS (V) 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C ) Fig 6. IS - VSD Fig 5. Vth - Tj 1.6 100 VGS = VDS, ID = 250µA Reverse Drain Current IS (A) Gate Threshold Voltage Vth (V) 18 Drain Current ID (A) 150 C 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 -50 -25 0 25 50 75 100 125 150 175 Junction Temperature Tj ( C) 2009. 6. 4 12 Drain to Source Voltage VDS (V) 30 Drain Current ID (A) 40 Revision No : 0 10 150 C 1 0.1 0.2 0.4 0.6 Tj=-55 C 25 C 0.8 1.0 1.2 Source to Drain Forward Voltage VSD (V) 3/4 Fig7. RDS(ON) - VGS 50 Fig8. C - VDS 1000 ID=6.5A f = 1MHz 40 Tj=150 C 30 20 800 Capacitance C (pF) Drain to Source On Resistance RDS(ON) (mΩ) KMC6D5CN20CA Tj=25 C 10 Ciss 600 400 Coss 200 Crss 0 1.5 3.5 2.5 0 4.5 4 0 Gate to Source Voltage VGS (V) 16 20 Drain to Source Voltage VDS (V) Fig9. Qg - VGS Fig10. Safe Operation Area 102 5 VDS = 10V ID = 6.5A 4 Drain Current ID (A) Gate to Source Voltage VGS (V) 12 6 3 2 1 1.2 2.4 3.6 4.8 200µs 1ms 100 RDS(ON) Limited 6 10ms 100ms 10-1 DC VGS=4.5V SINGLE PULSE Ta= 25 C 10-2 10-2 0 0 101 10-1 100 101 102 Drain to Source Voltage VDS (V) Gate Charge Qg (nC) Fig10. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance 101 100 Duty Cycle = 0.5 0.2 10-1 0.1 0.05 0.02 0.01 10-2 Single Pulse PDM t1 t2 1. Duty Cycle D = t1/t2 2. RthJA=111 C/W 10-3 10-4 10-3 10-2 10-1 100 101 102 103 Square Wave Pulse Duration tw (sec) 2009. 6. 4 Revision No : 0 4/4