SEMICONDUCTOR KMB3D0P30SA TECHNICAL DATA P-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS. E B FEATURES L D L 3 H G A 2 VDSS=-30V, ID=-3A Drain-Source ON Resistance 1 RDS(ON)=80m (Max.) @ VGS=-10V RDS(ON)=140m (Max.) @ VGS=-4.5V P P K J N C Super Hige Dense Cell Design DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch UNIT Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS I D* -2.5 DC@TA=70 Pulsed IDP -12 Drain-Source-Diode Forward Current IS -1.25 A A 1.25 TA=25 Drain Power Dissipation V -3 DC@TA=25 Drain Current 20 PD* W 0.8 TA=70 Tj 150 Tstg -55 150 RthJA* 100 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient /W Note : *Sorface Mounted on FR4 Board PIN CONNECTION (TOP VIEW) D 3 3 2007. 6. 28 2 1 G S 2 Revision No : 1 1 1/5 KMB3D0P30SA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT -30 - - V VGS=0V, VDS=-24V - - -1 VGS=0V, VDS=-24V, Tj=55 - - -10 - - 100 nA -1.0 - - V VGS=-10V, ID=-3A - 64 80 VGS=-4.5V, ID=-2.5A - 103 140 VDS=-10V, ID=-3A - 4.5 - - 565 - - 126 - Static BVDSS Drain-Source Breakdown Voltage IDS=-250 A, VGS=0V, IDSS Drain Cut-off Current A Gate Leakage Current IGSS VGS= Gate Threshold Voltage Vth VDS=VGS, ID=250 A Drain-Source ON Resistance 20V, VDS=0V RDS(ON)* gfs* Forward Transconductance m S Dynamic Input Capaclitance Ciss Ouput Capacitance Coss Reverse Transfer Capacitance Crss - 75 - Total Gate Charge Qg* - 10 15 Gate-Source Charge Qgs* - 1.9 - Gate-Drain Charge Qgd* - 2 - Turn-On Delat Time td(on)* - 10 20 Turn-On Rise Time tr* VDD=-15V, VGS=-10V - 9 20 ID=-1A, RG=6 - 27 50 - 7 16 - - -1.2 VDS=-15V, VGS= 0V, f=1MHz, VDS=-15V, VGS=-10V, ID=-3A pF nC ns td(off)* Turn-On Deley Time tr* Turn-On Fall Time Source-Drain Diode Ratings VSDF* Source-Drain Forward Voltage NOTE 1> * : Pulse Test : Pulse width <300 2007. 6. 28 VGS=0V, IDR=-1.25A V , Duty cycle < 2% Revision No : 1 2/5 KMB3D0P30SA Fig2. RDS-ID Drain Current ID (A) 12 10.0V 5.0V 3.5V 10 4.5V 4.0V 8 6 VGS=3.0V 4 2 0 0 4 2 6 8 10 Drain Source On Resistance RDS(ON) (Ω) Fig1. ID - VDS 200 Common Source Tc=25 C Pulse Test VGS=4.5V 100 VGS=10V 0 0 4 Normalized Drain-Source On-Resistance RDS(ON) (mΩ) Drain Current ID (A) 120 Common Source VDS=5V Pulse Test 8 4 25 C 125 C -55 C 0 Common Source VDS=10V, ID=3A Pulse Test 100 80 60 40 20 0 0 1 2 3 4 -75 5 Gate-Source Volatage VGS (V) -50 -25 3 2 1 -25 0 25 50 75 100 125 150 Junction Temperature Tj ( C) Revision No : 1 Reverse Source-Drain Current IDR (A) VGS=VDS ID=250µA 4 Pulse Test -50 25 50 75 100 125 150 Fig6. IDR - VSDF 5 Common Source 0 -75 0 Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 16 Fig4. RDS(on) - Tj Fig3. ID - VGS 2007. 6. 28 12 Drain - Current ID (A) Drain - Source Voltage VDS (V) 12 8 10 Common Source Tc= 25 C Pulse Test 8 6 4 2 0 0 0.4 0.8 1.2 1.6 2.0 Source - Drain Forward Voltage VSDF (V) 3/5 KMB3D0P30SA Fig7. Safe Operation Area Drain Current ID (A) Operation in this area is limited by RDS(ON) 101 1 ms 100 10 ms 100 ms 1s 10s 10-1 DC VGS= 10V SINGLE PULSE 10-2 10-1 100 101 30 Drain - Source Voltage VDS (V) Normalized Transient Thermal Resistance Fig8. Transient Thermal Response Curve 100 D = 0.5 0.2 0.1 10-1 0.05 0.02 PDM t1 t2 SINGLE - Duty = t/T 10-2 10-3 10-2 10-1 100 101 102 500 Square Wave Pulse Duration (sec) 2007. 6. 28 Revision No : 1 4/5 KMB3D0P30SA Fig9. Gate Charge Circuit and Wave Form VGS -4.5V Schottky Diode ID ID 0.5 VDSS 1.0 mA VDS Q Qgs VGS Qgd Qg Fig10. Resistive Load Switching RL td(on) 0.5 VDSS VGS ton tr td(off) toff tf 10% 50Ω VDS -10 V VGS VDS 2007. 6. 28 Revision No : 1 90% 5/5