White Light Emitting Diode(InGaN) KLB-16WC DIMENSIONS KLB-16W is a high bright InGaN white LED whitout using phorsphor. Features • Ultra Wide Viewing Angle • Very Thin Small SMD Package • Single Chip White LED without Phospor Applications • Display • Indicator • Key Pad Back Light Anode Index [ Ta=25°C ] Maximum Ratings Parameter Reverse Voltage Symbol VR Ratings 5 Unit V IF 25 mA IFP 60 mA PD 65 mW Operating temperature Topr. -30 ~ +85 °C Storage temperature Tstg. -40 ~ +105 °C Tsol. 260 °C Forward current Pulse forward current Power dissipation *1 Soldering Temperature *2 *1. IFP Measured under duty ≤ 1/10 @ 1KHz *2. Soldering time ≤ 5 Sec [ Ta=25°C ] Electro-Optical Characteristics Parameter Symbol Conditions Forward voltage VF Luminous Intensity Iv Color Coordinate Half angle x y x y ∆Θ Typical Values KLB-16W KLB-16W 2.9 2.9 IF = 5 mA KLB-16W 2.9 KLB-16W 2.9 IF = 20 mA 3.3 3.3 3.3 3.3 3.3 IF = 5 mA 70 75 70 70 90 IF = 20 mA 230 0.33 0.35 0.28 0.33 160 240 0.35 0.38 0.29 0.34 160 230 0.36 0.36 0.29 0.32 160 230 0.41 0.39 0.31 0.35 160 280 0.42 0.42 0.32 0.37 160 IF = 5 mA IF = 20 mA IF = 20 mA 1/2 KLB-16W 2.9 Unit V V mcd deg. White Light Emitting Diode(InGaN) KLB-16WC Forward current vs. Ambient temperature Radiant Intensity vs. Forward current 1.5 25 Relative intensity Forward current IF(mA) (IF) 30 20 15 10 1 0.5 5 0 0 20 40 60 80 0 (℃) 100 5 0 Ambient temperature Ta 10 15 20 25 Forward current IF (IF) 35 30 Relative intensity vs. Wavelength Relative radiant intensity vs. Ambient temperature 20mA 1 10 Intensity [arb.] Relative radiant intensity PO 1.2 1 0.1 0.8 0.6 5mA 0.4 0.2 -20 0 20 40 60 80 0 350 100 (℃) 450 Ambient temperature Ta 550 650 750 850 Wave Length[nm] Forward current vs. Forward voltage Radiant Pattern Angle(deg) (㎃) + 60 + 0 -20 -4 0 50 0 25 20 15 40 + 20 -6 10 +80 -80 -100 5 0 0 +1 0 0 Forward current IF 30 0 100 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Forward voltage VF 50 50 Relative intensity(%) 2/2 100