NTE NTE2999

NTE2999
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
Features:
D High Speed Switching
D Low On−Resistance
D No Secondary Breakdown
D Low Driving Power
D Avalanche−Proof
D
G
Applications:
D Switching Regulators
D UPS (Uninterruptible Power Supply)
D DC−DC Converters
S
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain−Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±35V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±40A
Repetitive or Non−Repetitive (TCh x +150°C), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Maximum Avalanche Energy (L = 1.42mH, VCC = 50V), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . 77.6mJ
Maximum Power Dissiption, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Channel Temperature TCh . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +150°C
Maximum Thermal Resistance, Junction−to−Case, RthCh−C . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Maximum Thermal Resistance, Junction−to−Ambient, RthCh−A . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Drain−Source Breakdown Voltage
Gate−Source Cutoff Voltage
Zero Gate Voltage Drain Current
Gate−Source Leakage Current
Symbol
Test Conditions
Min
Typ
Max
Unit
500
−
−
V
3.5
4.0
4.5
V
TCh = +25°C
−
10
500
µA
TCh = +125°C
−
0.2
1.0
mA
−
10
100
nA
V(BR)DSS ID = 1mA, VGS = 0V
VGS(off)
IDSS
IGSS
ID = 1mA, VDS = VGS
VDS 500V,
VGS = 0V
VGS = ±35V, VDS = 0V
RDS(on)
ID = 5A, VGS = 10V
−
0.73
0.90
Ω
Forward Transfer Admittance
gfs
ID = 5A, VDS = 25V
2.5
5.0
−
S
Input Capacitance
Ciss
VDS = 25V, f = 1MHz, VGS = 0V
−
950
1450
pF
Output Capacitance
Coss
−
180
270
pF
Reverse Transfer Capacitance
Crss
−
80
120
pF
Drain−Source On−State Resistance
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Turn−On Time
Symbol
Min
Typ
Max
Unit
−
25
40
ns
−
70
110
ns
td(off)
−
110
−
ns
tf
−
45
70
ns
td(on)
tr
Turn−Off Time
Test Conditions
VCC = 300V, ID = 10A,
VGS = 10CV
10CV, RGS = 10Ω
Avalanche Capability
IAV
L = 100µH, TCh = +25°C
10
−
−
A
Diode Forward On−Voltage
VSD
IF = 2x IDR, VGS = 0V, TCh = +25°C
−
1.10
1.65
V
IF = IDR, VGS = 0V,
−di/dt
di/dt = 100A/µs
100A/µs, TCh = +25°C
−
450
−
ns
−
5.5
−
µC
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
.181 (4.6)
Max
.114 (2.9)
.126 (3.2) Dia Max
.405 (10.3) Max
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)