APTM10TAM09FPG Triple phase leg MOSFET Power Module VBUS3 G1 G3 G5 S1 S5 S3 U G2 S2 0/VBUS1 G4 G6 S4 S6 0/VBUS2 0/VBUS3 VBUS 2 G1 U W V VBUS 1 0/VBUS 1 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control S1 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge • RoHS Compliant VBUS 3 G3 0/VBUS 2 S3 G5 0/VBUS 3 S5 S2 S4 S6 G2 G4 G6 V W Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Features • Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 139 100 430 ±30 10 390 100 50 3000 Unit V A July, 2006 VBUS2 V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM10TAM09FPG – Rev 1 VBUS1 VDSS = 100V RDSon = 09mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C APTM10TAM09FPG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IS VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 9 2 Min VGS = 10V VBus = 50V ID =139A Typ 9875 3940 1470 350 Unit Max Unit µA mΩ V nA pF nC 180 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A R G = 5Ω 70 125 552 608 µJ 641 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 139A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C µJ 604 Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, R G = 5Ω Test Conditions ns 95 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, R G = 5Ω IS = - 139A VR = 66V diS/dt = 100A/µs Max 100 500 10 4 ±100 60 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Max 139 100 1.3 8 190 370 0.4 1.7 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 139A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM10TAM09FPG – Rev 1 Symbol APTM10TAM09FPG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 3 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 Typ Max 0.32 150 125 100 5 250 Unit °C/W V °C N.m g SP6-P Package outline (dimensions in mm) 5 places (3:1) www.microsemi.com 3–6 APTM10TAM09FPG – Rev 1 July, 2006 See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTM10TAM09FPG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 VGS=15V, 10V & 9V 500 ID, Drain Current (A) 400 300 8V 200 7V 6V 100 V DS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 T J=25°C 20 0 T J=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 1.2 Normalized to V GS=10V @ 69.5A 1.1 V GS=10V 1 VGS=20V 0.9 1 2 3 4 5 6 VGS , Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 140 RDS(on) vs Drain Current ID, DC Drain Current (A) 120 100 80 60 40 20 0.8 0 0 50 100 150 200 ID, Drain Current (A) 25 50 75 100 125 150 July, 2006 RDS(on) Drain to Source ON Resistance T J=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–6 APTM10TAM09FPG – Rev 1 ID, Drain Current (A) 600 APTM10TAM09FPG 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature 1.2 2.5 VGS=10V ID= 69.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 25 50 75 100 125 150 Maximum Safe Operating Area 1.1 1.0 0.9 0.8 0.7 limited by RDSon 100µs 100 1ms Single pulse TJ=150°C TC=25°C 10 0.6 10ms 1 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=139A T J=25°C 14 VDS=20V 12 VDS=50V 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com V DS =80V 8 6 4 2 0 0 100 200 300 400 500 Gate Charge (nC) July, 2006 0 5–6 APTM10TAM09FPG – Rev 1 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) ON resistance vs Temperature RDS(on), Drain to Source ON resistance (Normalized) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 APTM10TAM09FPG Delay Times vs Current Rise and Fall times vs Current 160 120 t d(off) 80 VDS=66V RG=5Ω T J=125°C L=100µH 60 40 td(on) 120 100 80 tr 60 20 0 0 0 50 100 150 200 I D, Drain Current (A) 250 0 50 100 150 200 ID, Drain Current (A) 250 Switching Energy vs Gate Resistance Switching Energy vs Current 2.5 VDS=66V RG=5Ω TJ=125°C L=100µH 1 Switching Energy (mJ) 1.5 Eoff Eon 0.5 Eon VDS=66V ID=139A T J=125°C L=100µH 2 1.5 Eoff 1 Eon 0.5 0 0 100 150 200 250 0 10 I D, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω T J=125°C T C=75°C 200 150 ZVS 100 ZCS Hard switching 50 0 25 50 75 100 125 30 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 250 20 Gate Resistance (Ohms) 1000 TJ=150°C 100 TJ=25°C 10 1 150 I D, Drain Current (A) 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) July, 2006 50 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM10TAM09FPG – Rev 1 0 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) V DS=66V R G=5Ω T J=125°C L=100µH 140 t r and tf (ns) t d(on) and td(off) (ns) 100