APTCV50H60T3G Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Full - Bridge NPT & Trench + Field Stop® IGBT Power module 13 CoolMOS™ Q2, Q4: VCES = 600V ; IC = 49A @ Tc = 25°C 14 Application Q1 Q3 CR1 • Solar converter CR3 18 11 19 10 22 7 23 8 Q2 Q4 26 4 27 3 29 31 30 32 NTC Features • Q2, Q4 CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated • Q1, Q3 Trench & Field Stop IGBT® - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current 16 15 • • • • Top switches : Trench + Field Stop IGBT® Bottom switches : CoolMOS™ 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 Benefits • • • • Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • RoHS Compliant These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-9 APTCV50H60T3G – Rev 0 June, 2007 All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32 Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring APTCV50H60T3G All ratings @ Tj = 25°C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT® characteristics Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25°C TJ = 150°C Max ratings 600 80 50 100 ±20 176 100A @ 550V Unit V A V W Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25°C VGE =15V IC = 50A Tj = 150°C VGE = VCE , IC = 600µA VGE = 20V, VCE = 0V Min Typ 5.0 1.5 1.7 5.8 Min Typ Max Unit 250 1.9 µA 6.5 600 V nA Max Unit V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 3150 200 95 pF Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 110 45 200 40 ns Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω VGE = ±15V Tj = 25°C VBus = 300V Tj = 150°C IC = 50A Tj = 25°C RG = 8.2Ω Tj = 150°C Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance 120 50 250 ns 60 0.3 0.43 1.35 1.75 mJ mJ 0.85 www.microsemi.com June, 2007 Test Conditions °C/W 2-9 APTCV50H60T3G – Rev 0 Symbol Characteristic APTCV50H60T3G 1.2 Top fast diode characteristics Symbol Characteristic VRRM IRM IF VF Min Maximum Reverse Leakage Current VR=600V DC Forward Current Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 600 Maximum Peak Repetitive Reverse Voltage trr RthJC Test Conditions IF = 30A VR = 400V di/dt =200A/µs V Tj = 25°C Tj = 125°C 25 500 Tc = 80°C IF = 30A IF = 60A IF = 30A Unit Tj = 125°C 30 1.8 2.1 1.5 Tj = 25°C 25 Tj = 125°C Tj = 25°C 160 35 Tj = 125°C 480 Junction to Case Thermal resistance µA A 2.3 V ns nC 1.2 °C/W 2. Bottom switches 2.1 Bottom CoolMOS™ characteristics Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 49 38 130 ±20 45 290 15 3 1900 Unit V A V mΩ W A mJ Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current VGS = 0V,VDS = 600V Min VGS = 10V, ID = 24.5A VGS = VDS, ID = 3mA VGS = ±20 V, VDS = 0V www.microsemi.com Typ Tj = 25°C Tj = 125°C 2.1 40 3 Max 250 500 45 3.9 100 Unit µA mΩ V nA June, 2007 IDSS Test Conditions VGS = 0V,VDS = 600V 3-9 APTCV50H60T3G – Rev 0 Symbol Characteristic APTCV50H60T3G Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Crss Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Test Conditions VGS = 0V ; VDS = 25V f = 1MHz Min Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal resistance Unit nF nC 34 51 21 Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 49A RG = 4.7Ω Turn-off Delay Time Max 150 VGS = 10V VBus = 300V ID = 49A Rise Time Typ 7.2 0.29 30 ns 100 45 Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 4.7Ω Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 49A ; RG = 4.7Ω 675 µJ 520 1100 µJ 635 0.5 °C/W 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K Min 2500 -40 -40 -40 2.5 Typ Max Unit V R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 − T25 T 4. Package characteristics Symbol VISOL TJ TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 150* 125 100 4.7 110 °C N.m g www.microsemi.com 4-9 APTCV50H60T3G – Rev 0 June, 2007 Tj=175°C for Trench & Field Stop IGBT APTCV50H60T3G 5. SP3 Package outline (dimensions in mm) 28 17 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com 6. Top switches curves 6.1 Top Trench + Field Stop IGBT® typical performance curves Output Characteristics (VGE=15V) Output Characteristics 100 100 TJ=25°C TJ=125°C VGE=13V TJ=150°C 60 60 VGE=15V 40 40 20 20 TJ=25°C 0.5 1 1.5 VCE (V) 0 2 2.5 0 3 3.5 60 E (mJ) IC (A) 2.5 40 1.5 2 VCE (V) VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C 3 TJ=25°C 80 1 2.5 3 3.5 Energy losses vs Collector Current Transfert Characteristics 100 0.5 TJ=125°C Eoff June, 2007 0 VGE=9V 2 1.5 1 TJ=150°C 20 TJ=25°C 0 0 5 6 7 Eon 0.5 8 9 10 11 12 0 20 40 60 80 100 IC (A) VGE (V) www.microsemi.com 5-9 APTCV50H60T3G – Rev 0 0 VGE=19V 80 IC (A) IC (A) 80 TJ = 150°C APTCV50H60T3G Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 125 2.5 Eoff 100 IC (A) E (mJ) 2 1.5 0.5 50 VCE = 300V VGE =15V IC = 50A TJ = 150°C 1 Eon 75 VGE=15V TJ=150°C RG=8.2Ω 25 0 0 5 15 25 35 45 55 Gate Resistance (ohms) 65 0 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1 IGBT 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration in Seconds 6.2 Top Fast diode typical performance curves Forw ard Current vs Forw ard Voltage IF, Forward Current (A) 120 100 80 T J=125°C 60 40 T J=25°C 20 T J=-55°C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V) Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.2 1 0.8 0.9 0.7 0.5 0.4 0.2 0 0.00001 June, 2007 0.6 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) www.microsemi.com 6-9 APTCV50H60T3G – Rev 0 Thermal Impedance (°C/W) 1.4 APTCV50H60T3G 7. Bottom switches curves 7.1 Bottom CoolMOS™ typical performance curves Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.5 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 140 360 VGS=15&10V 6.5V 280 ID, Drain Current (A) 6V 240 200 5.5V 160 120 5V 80 4.5V 40 4V 0 100 80 60 40 TJ=125°C 20 TJ=25°C TJ=-55°C 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.3 Normalized to VGS=10V @ 50A 1.25 1.2 VGS=10V 1.15 1.1 VGS=20V 1.05 1 0.95 ID, DC Drain Current (A) 0.9 0 20 40 60 80 100 120 140 ID, Drain Current (A) 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 7 DC Drain Current vs Case Temperature 50 45 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 TC, Case Temperature (°C) June, 2007 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 120 www.microsemi.com 7-9 APTCV50H60T3G – Rev 0 ID, Drain Current (A) 320 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100 100 µs 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Coss Ciss 1000 Crss 100 10 1000 10 20 30 40 50 VDS, Drain to Source Voltage (V) 12 ID=50A TJ=25°C 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 20 40 60 80 100 120 140 160 Gate Charge (nC) June, 2007 0 100 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 50A www.microsemi.com 8-9 APTCV50H60T3G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTCV50H60T3G APTCV50H60T3G Delay Times vs Current 140 Rise and Fall times vs Current 70 100 VDS=400V RG=5Ω TJ=125°C L=100µH 80 60 40 VDS=400V RG=5Ω TJ=125°C L=100µH 60 td(off) 50 tr and tf (ns) tf 40 30 tr 20 td(on) 20 10 0 0 10 20 30 40 50 0 60 70 80 0 10 20 ID, Drain Current (A) Switching Energy (mJ) Eon 1.2 Eoff 0.8 0.4 VDS=400V ID=50A TJ=125°C L=100µH 2 1.5 60 70 80 Eoff Eon 1 0.5 0 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80 Operating Frequency vs Drain Current ZVS 200 ZCS 150 VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C 100 hard switching 50 20 30 40 50 Source to Drain Diode Forward Voltage 1000 0 5 10 Gate Resistance (Ohms) 300 250 0 IDR, Reverse Drain Current (A) 0 Frequency (kHz) 50 10 15 20 25 30 35 40 45 50 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 9-9 June, 2007 Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH 1.6 40 Switching Energy vs Gate Resistance 2.5 Switching Energy vs Current 2 30 ID, Drain Current (A) APTCV50H60T3G – Rev 0 td(on) and td(off) (ns) 120