<Multi-Function Transistor> RT8H065C latch circuit 0.6 ① ⑥ ② ⑤ ③ ④ 0.1 0∼0.1 APPLICATION Latch operation to protect over voltage and over current, such as a AC adapter. EIAJ:SC-74 JEDEC:SOT23-6 6 5 Out line ① IN1 ② IN3 ③ IN2 ④ OUT ⑤ GND ⑥ VCC 4 065 1 BLOCK DIAGRAM OUT 0.6 1.1 0.6 FEATURE ● The miniaturization of a set and high-density mounting are possible. ● The power supply voltage range of operation is wide. Unit:mm 2.8 1.6 VCC IN1 6 1 2 3 3 IN2 2 IN3 4 5 GND ( 1 / 3 ) 0.4 PIN CONFIGURATION 0.95 2.9 0.95 DESCRIPTION RT8H065C is a NPN transistor, a PNP transistor, and the compound transistor constituted by resistance. This transistor enables a miniaturization of the set and a great reduction in parts and man-hours. The circuit is composed as a latch function. FUNCTIONAL DESCRIPTION OF TERMINAL Pin number Symbol 1 2 3 4 5 6 IN1 IN3 IN2 OUT GND Vcc Functional Description Input 1 Input 3 Input 2 Output Ground Supply voltage ABSOLUTE MAXIMUM RATINGS(unless otherwise noted, Ta=25℃) Symbol Parameter Vcc Isink VOUT VIN Pd Kθ Tj Tstg Topr Supply voltage Output sink current Output voltage Input voltage Power Dissipation Thermal derating Junction temperature Storage temperature Operating temperature Conditions Ta≧25℃ Ratings Unit 37 15 Vcc -0.4 200 1.6 150 −40∼+150 −20∼+75 V mA V V mW mW/℃ ℃ ℃ ℃ ELECTRICAL CHARACTERISTICS(Vcc=22V、Ta=25℃ Unless otherwise noted) Symbol Parameter Vcc Supply voltage Icc(OFF) Off-state Circuit current Icc(ON) On-state Supply current VIN1th IN1 threshold voltage VIN2th IN2 threshold voltage VIN3th IN3 threshold voltage Vosat Output saturation voltage Test condition Vcc series resistance 82KΩ output pull-up resister 30KΩ Vcc series resistance 82KΩ output pull-up resister 30KΩ Vcc series resistance 82KΩ output pull-up resiste 30KΩ Vcc series resistance 82KΩ output pull-up resiste 30KΩ Vcc series resistance 82KΩ IN1 pull-up resiste 30KΩ Vcc series resistance 82KΩ output pull-up resiste 30KΩ Vcc series resistance 82KΩ Io=6mA ( 2 / 3 ) Min Limits Typ Max − 22 36 V − 0 1 uA − 250 1.0 1.2 1.4 V 0.54 0.69 0.84 V 0.5 0.65 0.8 V 0.4 0.6 V Unit uA THERMAL DERATING CURVE IN1 THRESHOLD VOLTAGE VS AMBIENT TEMPERATURE 1.6 200 1.4 1.2 VIN1th[V] POWER DISSIPATION Pb[mW] 250 150 100 1.0 0.8 0.6 0.4 0.2 50 0.0 -25 0 0 25 50 75 AMBIENT TEMPERATURE [℃] 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta[℃] IN3 THRESHOLD VOLTAGE VS AMBIENT TEMPERATURE 0.9 0.8 0.8 0.7 0.7 0.6 0.6 VIN3th[V] VIN2th[V] IN2 THRESHOLD VOLTAGE VS AMBIENT TEMPERATURE 0.5 0.4 0.3 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0.0 0.0 -25 0 25 50 75 -25 AMBIENT TEMPERATURE [℃] APPLICATION CIRCUIT EXAMPLE Guard signal H:Output latch L:Latch cancel 0 25 50 AMBIENT TEMPERATURE [℃] 1 6 2 5 3 4 Guard signal L:Output latch H:Latch holding ( 3 / 3 ) 75 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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