ISAHAYA RT8H065C

<Multi-Function Transistor>
RT8H065C
latch circuit
0.6
①
⑥
②
⑤
③
④
0.1
0∼0.1
APPLICATION
Latch operation to protect over voltage and
over current, such as a AC adapter.
EIAJ:SC-74
JEDEC:SOT23-6
6
5
Out line
① IN1
② IN3
③ IN2
④ OUT
⑤ GND
⑥ VCC
4
065
1
BLOCK DIAGRAM
OUT
0.6
1.1
0.6
FEATURE
● The miniaturization of a set
and high-density mounting are possible.
● The power supply voltage range of operation
is wide.
Unit:mm
2.8
1.6
VCC
IN1
6
1
2
3
3
IN2
2
IN3
4
5
GND
( 1 / 3 )
0.4
PIN CONFIGURATION
0.95 2.9
0.95
DESCRIPTION
RT8H065C is a NPN transistor, a PNP transistor,
and the compound transistor constituted
by resistance. This transistor enables
a miniaturization of the set and a great
reduction in parts and man-hours.
The circuit is composed as a latch function.
FUNCTIONAL DESCRIPTION OF TERMINAL
Pin number
Symbol
1
2
3
4
5
6
IN1
IN3
IN2
OUT
GND
Vcc
Functional Description
Input 1
Input 3
Input 2
Output
Ground
Supply voltage
ABSOLUTE MAXIMUM RATINGS(unless otherwise noted, Ta=25℃)
Symbol
Parameter
Vcc
Isink
VOUT
VIN
Pd
Kθ
Tj
Tstg
Topr
Supply voltage
Output sink current
Output voltage
Input voltage
Power Dissipation
Thermal derating
Junction temperature
Storage temperature
Operating temperature
Conditions
Ta≧25℃
Ratings
Unit
37
15
Vcc
-0.4
200
1.6
150
−40∼+150
−20∼+75
V
mA
V
V
mW
mW/℃
℃
℃
℃
ELECTRICAL CHARACTERISTICS(Vcc=22V、Ta=25℃ Unless otherwise noted)
Symbol
Parameter
Vcc
Supply voltage
Icc(OFF) Off-state Circuit current
Icc(ON)
On-state Supply current
VIN1th
IN1 threshold voltage
VIN2th
IN2 threshold voltage
VIN3th
IN3 threshold voltage
Vosat
Output saturation voltage
Test condition
Vcc series resistance 82KΩ
output pull-up resister 30KΩ
Vcc series resistance 82KΩ
output pull-up resister 30KΩ
Vcc series resistance 82KΩ
output pull-up resiste 30KΩ
Vcc series resistance 82KΩ
output pull-up resiste 30KΩ
Vcc series resistance 82KΩ
IN1 pull-up resiste 30KΩ
Vcc series resistance 82KΩ
output pull-up resiste 30KΩ
Vcc series resistance 82KΩ
Io=6mA
( 2 / 3 )
Min
Limits
Typ
Max
−
22
36
V
−
0
1
uA
−
250
1.0
1.2
1.4
V
0.54
0.69
0.84
V
0.5
0.65
0.8
V
0.4
0.6
V
Unit
uA
THERMAL DERATING CURVE
IN1 THRESHOLD VOLTAGE VS
AMBIENT TEMPERATURE
1.6
200
1.4
1.2
VIN1th[V]
POWER DISSIPATION Pb[mW]
250
150
100
1.0
0.8
0.6
0.4
0.2
50
0.0
-25
0
0
25
50
75
AMBIENT TEMPERATURE [℃]
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta[℃]
IN3 THRESHOLD VOLTAGE VS
AMBIENT TEMPERATURE
0.9
0.8
0.8
0.7
0.7
0.6
0.6
VIN3th[V]
VIN2th[V]
IN2 THRESHOLD VOLTAGE VS
AMBIENT TEMPERATURE
0.5
0.4
0.3
0.5
0.4
0.3
0.2
0.2
0.1
0.1
0.0
0.0
-25
0
25
50
75
-25
AMBIENT TEMPERATURE [℃]
APPLICATION CIRCUIT EXAMPLE
Guard signal
H:Output latch
L:Latch cancel
0
25
50
AMBIENT TEMPERATURE [℃]
1
6
2
5
3
4
Guard signal
L:Output latch
H:Latch holding
( 3 / 3 )
75
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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Feb.2005