<Multi-Function Transistor> RT8H255C IGBT Gate Driver ② ⑤ ③ ④ 6 5 4 Outline ①A ②B ③VCC ④GATEIN ⑤GND ⑥DI 255 １ 2 0.33±0.05 ⑥ 0.12±0.01 ① 0～0.1 IGBT Gate Driver 0.95±0.05 APPLICATION 0.81 The miniaturization of a set and high-density mounting are possible. Unit:mm 2.8±0.1 0.65±0.2 1.50±0.1 0.65±0.2 1.9±0.1 FEATURE PIN CONFIGURATION 1.1±0.1 RT8H255C is a integrating IGBT gate drive circuit. This product can drive IGBT with two external transistors. GATEIN terminal have hysteresis input voltage. Case of “L→H” propagation, B terminal output low signal at over 2.80V. Case of “H→L” propagation, B terminal output high signal at under 2.48V. 2.80±0.2 DESCRIPTION 3 BLOCK DIAGRAM VCC DI 3 6 A 1 GATEIN 4 Reference voltage Driver B 2 GND 5 100621 <Multi-Function Transistor> RT8H255C IGBT Gate Driver ABSOLUTE MAXIMUM RATINGS（ Ta=25℃, unless otherwise noted ） Symbol Parameter Conditions Ratings Unit V V mW mW/℃ ℃ ℃ ℃ Vcc VGIN Pd Kθ Tj Tstg Supply voltage IN terminal voltage Power Dissipation Thermal derating factor Junction temperature Storage temperature Non condensing 30 10 200 1.6 150 －40～150 Topr Operating temperature Non condensing －20～75 Ta≧25℃ ELECTRICAL CHARACTERISTICS（ Ta=25℃,VCC=20V,Terminal is open, unless otherwise notec ） Symbol Parameter Test conditions Vcc Operating supply voltage range ICC1 Circuit current 1 ICC2 Circuit current 2 VOB2 B terminal output low voltage 2 Vth1 GATEIN terminal threshold voltage 1（Low→High） GATEIN：0→5V VMB：Low Vth2 GATEIN terminal threshold voltage 2（High→Low） GATEIN：5→0V VMB：High IOUTA1 A terminal output current 1 IOUTA2 A terminal output current 2 IINB B terminal sink current IOUTB B terminal source current GATEIN=0V GATEIN=5V GATEIN=5V GATEIN=0V、A=B=0.7V IMA GATEIN=5V、A=18V IMA GATEIN=5V、B=0.3V IMB GATEIN=0V、B=0.7V IMB Min. Limits Typ. Max. 10 20 25 V - 490 735 uA - 500 750 uA - 0 0.28 V 2.54 2.80 3.10 V 2.24 2.48 2.74 V -1 0 1 uA -810 -600 -390 uA 700 1080 1460 uA -1120 -830 -540 uA Unit 100621 <Multi-Function Transistor> RT8H255C IGBT Gate Driver Application circuit VCC DI 3 6 A 1 2SC3052 IGBT GATEIN Gate signal 4 150Ω Driver Reference voltage 10Ω B 2 2SC3052 GND 5 <TYPICAL CHARACTERISTICS> ICC1：Circuit current 1 700 200 600 150 500 ICC1[uA] Power dissipation Pd[mW] 250 100 50 400 300 200 100 0 0 25 50 75 100 125 150 Ambient temperature Ta.[℃] 0 10 15 20 25 VCC[V] ICC2：Circuit current 2 VOB2：B terminal output low voltage 2 700 0.30 600 0.25 VOB2（V) ICC2(uA) 500 400 300 0.20 0.15 200 0.10 100 0.05 0 0.00 10 15 20 VCC[V] 25 10 15 20 25 VCC[V] 100621 <Multi-Function Transistor> RT8H255C IGBT Gate Driver VTHIN2：GATEIN terminal threshold voltage 2 （High→Low） 3.2 2.8 3.1 2.7 3.0 2.6 VTHIN2[V] VTHIN1[V] VTHIN1：GATEIN terminal threshold voltage 1 （Low→High） 2.9 2.8 2.7 2.5 2.4 2.3 2.6 2.2 2.5 2.1 2.0 2.4 10 15 20 10 25 15 IOUTA1：：A terminal output current 1 0 -100 1.0 -200 IOUTA2[uA] IOUTA1[uA] 25 IOUTA2：A terminal output current 2 1.5 0.5 0.0 -0.5 -300 -400 -500 -600 -700 -1.0 -800 -900 -1.5 10 15 20 10 25 15 20 25 VCC[V] VCC[V] IOUTB：B terminal source current IINB：B terminal sink current 0 1600 -200 1400 IOUTB[uA] 1200 IINB（uA) 20 VCC[V] VCC[V] 1000 800 600 -400 -600 -800 400 -1000 200 0 -1200 10 15 20 VCC[V] 25 10 15 20 25 VCC[V] 100621 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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