Preliminary Technical Information Trench Gate Power MOSFET IXTH200N075T IXTQ200N075T VDSS ID25 RDS(on) = 75 V = 200 A Ω ≤ 5.0 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM 75 75 V V Transient ± 20 V ID25 ILRMS IDM TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM 200 75 540 A A A IAR EAS TC = 25°C TC = 25°C 25 750 A mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS TJ ≤ 175°C, RG = 5 Ω 3 V/ns PD TC = 25°C 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 260 °C °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Md Mounting torque Weight TO-3P TO-247 1.13 / 10 Nm/lb.in. 5.5 6 Symbol Test Conditions (TJ = 25°C unless otherwise specified) g g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 75 VGS(th) VDS = VGS, ID = 250 μA 2.0 IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) V TJ = 150°C VGS = 10 V, ID = 25 A, Notes 1, 2 G D (TAB) S TO-3P (IXTQ) TJ TJM Tstg TL TSOLD TO-247 (IXTH) 4.0 4.0 V ± 200 nA 5 250 μA μA 5.0 mΩ G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density DS99634 (11/06) © 2006 IXYS CORPORATION All rights reserved IXTH200N075T IXTQ200N075T Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Typ. 70 110 S 6800 pF Ciss Coss TO-247 AD Outline Min. VGS = 0 V, VDS = 25 V, f = 1 MHz Max. 1040 pF 190 pF 31 ns Crss td(on) Resistive Switching Times tr VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A 57 ns td(off) RG = 5 Ω (External) 54 ns 52 ns 160 nC 35 nC 43 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A Qgd TO-3P TO-247 Characteristic Values Min. Typ. Max. IS VGS = 0 V 200 A ISM Pulse width limited by TJM 540 A VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V t rr IF = 25 A, -di/dt = 100 A/μs 50 2 - Drain Tab - Drain Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Source-Drain Diode Symbol Test Conditions TJ = 25°C unless otherwise specified) 3 Dim. °C/W °C/W 0.25 0.21 2 Terminals: 1 - Gate 3 - Source 0.35 °C/W RthJC RthCH 1 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline ns VR = 40 V, VGS = 0 V Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %; 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5 mm or less from the package body. Pins: PRELIMINARYTECHNICALINFORMATION 1 - Gate 3 - Source 2 - Drain 4, TAB - Drain The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734 B2 7,063,975 B2 7,071,537 IXTH200N075T IXTQ200N075T Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 200 350 VGS = 10V 9V 8V 7V 180 160 7V 250 I D - Amperes 140 I D - Amperes VGS = 10V 9V 8V 300 120 100 6V 80 60 200 6V 150 100 40 5V 50 20 5V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0 1 1 2 4 5 6 Fig. 4. RDS(on) Normalized to ID = 100A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 150ºC 200 2.6 V GS = 10V 9V 8V 7V 160 2.2 140 120 100 6V 80 60 VGS = 10V 2.4 RDS(on) - Normalized 180 I D - Amperes 3 VDS - Volts VDS - Volts 5V 2.0 1.8 I D = 100A 1.4 1.2 40 1.0 20 0.8 0 I D = 200A 1.6 0.6 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 175 TJ - Degrees Centigrade VDS - Volts Fig. 5. RDS(on) Normalized to ID = 100A Value vs. Drain Current Fig. 6. Drain Current vs. Case Temperature 2.6 140 External Lead Current Limit for TO-263 (7-Lead) TJ = 175ºC 2.4 120 100 2 I D - Amperes RDS(on) - Normalized 2.2 VGS = 10V 15V - - - - 1.8 1.6 80 External Lead Current Limit for TO-3P, TO-220, & TO-263 60 1.4 40 TJ = 25ºC 1.2 20 1 0 0.8 0 50 100 150 200 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 250 300 350 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 175 IXTH200N075T IXTQ200N075T Fig. 8. Transconductance Fig. 7. Input Admittance 160 300 TJ = - 40ºC TJ = -40ºC 25ºC 150ºC 270 240 140 120 g f s - Siemens I D - Amperes 210 180 150 120 25ºC 100 80 150ºC 60 90 40 60 20 30 0 0 3 3.5 4 4.5 5 5.5 6 6.5 0 7 50 100 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 200 250 300 350 Fig. 10. Gate Charge 10 350 V DS = 38V 9 300 I D = 25A 8 250 I G = 10mA 7 V GS - Volts I S - Amperes 150 I D - Amperes 200 TJ = 150ºC 150 TJ = 25ºC 100 6 5 4 3 2 50 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 0 20 40 V SD - Volts 60 80 100 120 140 160 Q G - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1.00 Z (th)JC - ºC / W Capacitance - PicoFarads C iss 1,000 C oss f = 1 MHz C rss 100 0 5 0.10 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse W idth - Seconds 1 10 IXTH200N075T IXTQ200N075T Fig. 13. Resistiv e Turn-on Rise Time vs. Junction Temperature Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 70 65 RG = 5 Ω 60 65 V GS = 10V 60 V DS = 38V t r - Nanoseconds t r - Nanoseconds 55 50 45 40 35 I D = 50A 30 TJ = 25ºC 55 RG = 5 Ω 50 V GS = 10V 45 V DS = 38V 40 35 TJ = 125ºC 30 I D = 25A 25 25 20 20 25 35 45 55 65 75 85 95 105 115 25 125 30 35 T J - Degrees Centigrade 130 td(on) - - - - TJ = 125ºC, V GS = 10V 110 60 58 57 57 54 t r - Nanoseconds 80 45 70 42 I D = 50A 39 50 36 I D = 25A 40 30 20 4 6 8 10 12 14 16 18 55 80 54 75 53 52 65 51 33 50 30 49 27 48 60 35 57 90 55 65 75 85 95 105 115 45 125 300 TJ = 125ºC, V GS = 10V 65 51 60 55 TJ = 25ºC 49 130 220 I D = 25A 110 180 90 140 I D = 50A 70 d ( o f f ) - Nanoseconds 52 t 70 - Nanoseconds V DS = 38V 53 d(off) 75 260 V DS = 38V t 80 RG = 5 Ω , V GS = 10V td(off) - - - - tf 150 85 TJ = 125ºC td(off) - - - - 170 t f - Nanoseconds 56 t f - Nanoseconds 45 Fig. 18. Resistive Turn-off Switching Times v s. Gate Resistance 95 50 50 V DS = 38V T J - Degrees Centigrade 58 54 55 RG = 5 Ω , V GS = 10V 25 20 td(off) - - - - tf Fig. 17. Resistiv e Turn-off Switching Times v s. Drain Current tf 70 I D = 50A R G - Ohms 55 85 d ( o f f ) - Nanoseconds 48 90 I D = 25A t 90 95 56 d ( o n ) - Nanoseconds 51 60 50 t V DS = 38V 100 t f - Nanoseconds tr 45 Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature Fig. 15. Resistiv e Turn-on Switching Times vs. Gate Resistance 120 40 I D - Amperes 100 50 48 45 25 30 35 40 45 I D - Amperes © 2006 IXYS CORPORATION All rights reserved 50 50 60 4 6 8 10 12 14 16 18 20 R G - Ohms IXYS REF: T_200N075T (5V) 6-20-06.xls