IXYS IXTQ200N075T

Preliminary Technical Information
Trench Gate
Power MOSFET
IXTH200N075T
IXTQ200N075T
VDSS
ID25
RDS(on)
= 75
V
= 200
A
Ω
≤ 5.0 mΩ
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
V DSS
VDGR
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
VGSM
75
75
V
V
Transient
± 20
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
200
75
540
A
A
A
IAR
EAS
TC = 25°C
TC = 25°C
25
750
A
mJ
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
3
V/ns
PD
TC = 25°C
430
W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300
260
°C
°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Md
Mounting torque
Weight
TO-3P
TO-247
1.13 / 10 Nm/lb.in.
5.5
6
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
BVDSS
VGS = 0 V, ID = 250 μA
75
VGS(th)
VDS = VGS, ID = 250 μA
2.0
IGSS
VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
TJ = 150°C
VGS = 10 V, ID = 25 A, Notes 1, 2
G
D
(TAB)
S
TO-3P (IXTQ)
TJ
TJM
Tstg
TL
TSOLD
TO-247 (IXTH)
4.0
4.0
V
± 200
nA
5
250
μA
μA
5.0
mΩ
G
D
(TAB)
S
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z
International standard packages
z
Unclamped Inductive Switching (UIS)
rated
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
DS99634 (11/06)
© 2006 IXYS CORPORATION All rights reserved
IXTH200N075T
IXTQ200N075T
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
gfs
VDS= 10 V; ID = 60 A, Note 1
Typ.
70
110
S
6800
pF
Ciss
Coss
TO-247 AD Outline
Min.
VGS = 0 V, VDS = 25 V, f = 1 MHz
Max.
1040
pF
190
pF
31
ns
Crss
td(on)
Resistive Switching Times
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A
57
ns
td(off)
RG = 5 Ω (External)
54
ns
52
ns
160
nC
35
nC
43
nC
tf
Qg(on)
Qgs
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A
Qgd
TO-3P
TO-247
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0 V
200
A
ISM
Pulse width limited by TJM
540
A
VSD
IF = 25 A, VGS = 0 V, Note 1
1.0
V
t rr
IF = 25 A, -di/dt = 100 A/μs
50
2 - Drain
Tab - Drain
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Source-Drain Diode
Symbol
Test Conditions
TJ = 25°C unless otherwise specified)
3
Dim.
°C/W
°C/W
0.25
0.21
2
Terminals: 1 - Gate
3 - Source
0.35 °C/W
RthJC
RthCH
1
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-3P (IXTQ) Outline
ns
VR = 40 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Pins:
PRELIMINARYTECHNICALINFORMATION
1 - Gate
3 - Source
2 - Drain
4, TAB - Drain
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a preproduction design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478 B2
7,005,734 B2
7,063,975 B2
7,071,537
IXTH200N075T
IXTQ200N075T
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
200
350
VGS = 10V
9V
8V
7V
180
160
7V
250
I D - Amperes
140
I D - Amperes
VGS = 10V
9V
8V
300
120
100
6V
80
60
200
6V
150
100
40
5V
50
20
5V
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
1
1
2
4
5
6
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
2.6
V GS = 10V
9V
8V
7V
160
2.2
140
120
100
6V
80
60
VGS = 10V
2.4
RDS(on) - Normalized
180
I D - Amperes
3
VDS - Volts
VDS - Volts
5V
2.0
1.8
I D = 100A
1.4
1.2
40
1.0
20
0.8
0
I D = 200A
1.6
0.6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
2.6
140
External Lead Current Limit for TO-263 (7-Lead)
TJ = 175ºC
2.4
120
100
2
I D - Amperes
RDS(on) - Normalized
2.2
VGS = 10V
15V - - - -
1.8
1.6
80
External Lead Current Limit for TO-3P, TO-220, & TO-263
60
1.4
40
TJ = 25ºC
1.2
20
1
0
0.8
0
50
100
150
200
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
250
300
350
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
175
IXTH200N075T
IXTQ200N075T
Fig. 8. Transconductance
Fig. 7. Input Admittance
160
300
TJ = - 40ºC
TJ = -40ºC
25ºC
150ºC
270
240
140
120
g f s - Siemens
I D - Amperes
210
180
150
120
25ºC
100
80
150ºC
60
90
40
60
20
30
0
0
3
3.5
4
4.5
5
5.5
6
6.5
0
7
50
100
V GS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
200
250
300
350
Fig. 10. Gate Charge
10
350
V DS = 38V
9
300
I D = 25A
8
250
I G = 10mA
7
V GS - Volts
I S - Amperes
150
I D - Amperes
200
TJ = 150ºC
150
TJ = 25ºC
100
6
5
4
3
2
50
1
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
0
20
40
V SD - Volts
60
80
100
120
140
160
Q G - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
10,000
1.00
Z (th)JC - ºC / W
Capacitance - PicoFarads
C iss
1,000
C oss
f = 1 MHz
C rss
100
0
5
0.10
10
15
20
25
30
35
40
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.01
0.0001
0.001
0.01
0.1
Pulse W idth - Seconds
1
10
IXTH200N075T
IXTQ200N075T
Fig. 13. Resistiv e Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
70
65
RG = 5 Ω
60
65
V GS = 10V
60
V DS = 38V
t r - Nanoseconds
t r - Nanoseconds
55
50
45
40
35
I D = 50A
30
TJ = 25ºC
55
RG = 5 Ω
50
V GS = 10V
45
V DS = 38V
40
35
TJ = 125ºC
30
I D = 25A
25
25
20
20
25
35
45
55
65
75
85
95
105
115
25
125
30
35
T J - Degrees Centigrade
130
td(on) - - - -
TJ = 125ºC, V GS = 10V
110
60
58
57
57
54
t r - Nanoseconds
80
45
70
42
I D = 50A
39
50
36
I D = 25A
40
30
20
4
6
8
10
12
14
16
18
55
80
54
75
53
52
65
51
33
50
30
49
27
48
60
35
57
90
55
65
75
85
95
105 115
45
125
300
TJ = 125ºC, V GS = 10V
65
51
60
55
TJ = 25ºC
49
130
220
I D = 25A
110
180
90
140
I D = 50A
70
d ( o f f ) - Nanoseconds
52
t
70
- Nanoseconds
V DS = 38V
53
d(off)
75
260
V DS = 38V
t
80
RG = 5 Ω , V GS = 10V
td(off) - - - -
tf
150
85
TJ = 125ºC
td(off) - - - -
170
t f - Nanoseconds
56
t f - Nanoseconds
45
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
95
50
50
V DS = 38V
T J - Degrees Centigrade
58
54
55
RG = 5 Ω , V GS = 10V
25
20
td(off) - - - -
tf
Fig. 17. Resistiv e Turn-off
Switching Times v s. Drain Current
tf
70
I D = 50A
R G - Ohms
55
85
d ( o f f ) - Nanoseconds
48
90
I D = 25A
t
90
95
56
d ( o n ) - Nanoseconds
51
60
50
t
V DS = 38V
100
t f - Nanoseconds
tr
45
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistiv e Turn-on
Switching Times vs. Gate Resistance
120
40
I D - Amperes
100
50
48
45
25
30
35
40
45
I D - Amperes
© 2006 IXYS CORPORATION All rights reserved
50
50
60
4
6
8
10
12
14
16
18
20
R G - Ohms
IXYS REF: T_200N075T (5V) 6-20-06.xls