SEMICONDUCTOR KU045N10P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter, Synchronous Rectification and a load switch in battery powered applications FEATURES K ・VDSS= 100V, ID= 150A ・Drain-Source ON Resistance : RDS(ON)=4.5mΩ(Max.) @VGS = 10V MAXIMUM RATING (Tc=25℃) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V @TC=25℃ Drain Current 150 ID @TC=100℃ 94.9 A IDP 400* EAS 860 mJ EAR 8.8 mJ dv/dt 4.5 V/ns 192 W 1.54 W/℃ Tj 150 ℃ Tstg -55 ~ 150 ℃ Thermal Resistance, Junction-to-Case RthJC 0.65 ℃/W Thermal Resistance, Junction-to-Ambient RthJA 62.5 ℃/W Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25℃ PD Derate above 25℃ Maximum Junction Temperature Storage Temperature Range Thermal Characteristics * : Drain current limited by maximum junction temperature. Calculated continuous Current based on maximum allowable junction temperature PIN CONNECTION 2012. 5. 23 Revision No : 0 1/7 KU045N10P ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 100 - - V ID=5mA, Referenced to 25℃ - 0.09 - V/℃ Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient BVDSS ΔBVDSS/ΔTj ID=250μA, VGS=0V Drain Cut-off Current IDSS VDS=100V, VGS=0V, - - 10 μA Gate Threshold Voltage Vth VDS=VGS, ID=250μA 2.0 - 4.0 V Gate Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=75A - 3.9 4.5 mΩ - 200 - - 40 - - 70 - - 155 - - 240 - - 625 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time VDS=80V, ID=80A VGS=10V (Note4,5) VDD=50V ID=80A td(off) Turn-off Delay time RG=25Ω nC ns (Note4,5) Turn-off Fall time tf - 220 - Input Capacitance Ciss - 1,060 - Output Capacitance Coss - 1,000 - Reverse Transfer Capacitance Crss - 500 - - - 137 - - 548 VDS=25V, VGS=0V, f=1.0MHz pF Source-Drain Diode Ratings IS Continuous Source Current VGS<Vth A Pulsed Source Current ISP Diode Forward Voltage VSD IS=95A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=80A, VGS=0V, - 80 - ns Reverse Recovery Charge Qrr dIs/dt=300A/μs - 0.6 - uC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =70μH, IS=100A, VDD=80V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤80A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. Marking 2012. 5. 23 Revision No : 0 2/7 KU045N10P 2012. 5. 23 Revision No : 0 3/7 KU045N10P 2012. 5. 23 Revision No : 0 4/7 KU045N10P 2012. 5. 23 Revision No : 0 5/7 KU045N10P 2012. 5. 23 Revision No : 0 6/7 KU045N10P 2012. 5. 23 Revision No : 0 7/7