SEMICONDUCTOR KF1N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF1N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. A C K DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 6.10 + B _ 0.30 5.34 + C _ 0.20 D 0.70 + _ 0.15 E 2.70 + _ 0.10 2.30 + F 0.96 MAX G 0.90 MAX H _ 0.20 1.80 + J _ 0.10 2.30 + K _ 0.10 0.50 + L _ 0.10 M 0.50 + 0.70 MIN N L D B FEATURES ・VDSS= 600V, ID= 1A H ・RDS(ON)=10Ω(Max) @VGS = 10V J ・Qg(typ) = 4.0nC N F ・EAS=45mJ MAXIMUM RATING (Tc=25℃) 1 SYMBOL RATING UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V @TC=25℃ @TC=100℃ Pulsed (Note1) 2 M 3 1. GATE 2. DRAIN 3. SOURCE 1.0 0.63 A DPAK (1) KF1N60I IDP 2.0 EAS 45 mJ EAR 2 mJ dv/dt 4.5 V/ns 28 W A H C J DIM B Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID F D CHARACTERISTIC Drain Current E G PD Derate above 25℃ W/℃ Tj 150 ℃ Tstg -55～150 ℃ B M P N Storage Temperature Range F G G Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 4.5 ℃/W Thermal Resistance, Junction-toAmbient RthJA 110 ℃/W C D E E Maximum Junction Temperature 0.22 A K Tc=25℃ Drain Power Dissipation H F L F J K L 2 3 1. GATE 2. DRAIN 3. SOURCE _ 0.2 6.6 + _ 0.2 6.1 + _ 0.3 5.34 + _ 0.2 0.7 + _ 0.3 9.3 + _ 0.2 2.3 + _ 0.1 0.76 + _ 0.1 2.3 + _ 0.1 0.5+ _ 0.2 1.8 + _ 0.1 0.5 + N _ 0.1 1.0 + 0.96 MAX P _ 0.3 1.02 + M 1 MILLIMETERS PIN CONNECTION (KF1N60D/I) D IPAK(1) G S 2010. 9. 27 Revision No : 0 1/6 KF1N60D/I ELECTRICAL CHARACTERISTICS (Tc=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT 600 - - V ID=250㎂, Referenced to 25℃ - 0.6 - V/℃ Static BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂ , VGS=0V Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250㎂ 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA VGS=10V, ID=0.5A - 8.0 10.0 Ω - 4.0 - - 0.7 - - 2.3 - - 10 - - 10 - - 15 - RDS(ON) Drain-Source ON Resistance Dynamic Qg Total Gate Charge Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-on Delay time td(on) tr Turn-on Rise time td(off) Turn-off Delay time VDS=480V, ID=1A VGS=10V (Note4,5) VDD=300V ID=1A RG=25Ω (Note4,5) Turn-off Fall time tf - 15 - Input Capacitance Ciss - 150 - Output Capacitance Coss - 20 - Reverse Transfer Capacitance Crss - 3 - - - 1 - - 4 VDS=25V, VGS=0V, f=1.0MHz nC ns pF Source-Drain Diode Ratings Continuous Source Current IS Pulsed Source Current ISP Diode Forward Voltage VSD IS=1A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=1A, VGS=0V, - 200 - ns Reverse Recovery Charge Qrr dIs/dt=100A/㎲ - 0.4 - μC VGS<Vth A Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L=83mH, IS=1A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤1A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤300㎲, Duty Cycle≤2%. Note 5) Essentially independent of operating temperature. Marking 1 1 KF1N60 001 D 2010. 9. 27 2 Revision No : 0 KF1N60 001 I 2 1 PRODUCT NAME 2 LOT NO 2/6 KF1N60D/I 24 20 16 12 8 4 0.5 1 1.5 2 2.5 0.5A 2010. 9. 27 Revision No : 0 3/6 KF1N60D/I 1A 48V 1.5 1.25 1 0.75 0.5 0.25 10 1 0.1 10-5 2010. 9. 27 10-4 Revision No : 0 10-3 10-2 10-1 100 4/6 KF1N60D/I 2010. 9. 27 Revision No : 0 5/6 KF1N60D/I 2010. 9. 27 Revision No : 0 6/6