IRFB17N60K, SiHFB17N60K Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Smaller TO-220 Package 600 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 99 Qgs (nC) 32 Qgd (nC) • Low Gate Charge Qg Results in Simple Drive Requirement 0.35 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 47 Configuration Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current Single D • Lead (Pb)-free Available TO-220 APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptible Power Supply • High Speed Power Switching S G D • Hard Switched and High Frequency Circuits S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFB17N60KPbF SiHFB17N60K-E3 IRFB17N60K SiHFB17N60K Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 17 11 A IDM 68 2.7 W/°C EAS 330 mJ Currenta IAR 17 A Repetitive Avalanche Energya EAR 34 mJ Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque PD 340 W dV/dt 11 V/ns TJ, Tstg - 55 to + 150 for 10 s 300d 6-32 or M3 screw 10 °C N Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = 17 A (see fig. 12). c. ISD ≤ 17 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. www.kersemi.com 1 IRFB17N60K, SiHFB17N60K THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 58 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 0.37 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 600 - mV/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 250 µA - 0.35 0.42 Ω gfs VDS = 50 V, ID = 10 A 5.9 - - S Input Capacitance Ciss VGS = 0 V, - 2700 - Output Capacitance Coss VDS = 25 V, - 240 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 21 - - 2950 - Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 10 Ab VGS = 10 V Dynamic Output Capacitance Effective Output Capacitance Total Gate Charge Gate-Source Charge Coss Coss eff. VGS = 0 V VDS = 1.0 V , f = 1.0 MHz VGS = 0 V VDS = 480 V , f = 1.0 MHz - 67 - VGS = 0 V VDS = 0 V to 480 V - 120 - - - 99 - - 32 Qg Qgs VGS = 10 V ID = 17 A, VDS = 480 V Qgd - - 47 Turn-On Delay Time td(on) - 25 - - 82 - - 38 - - 32 - - - 17 - - 68 - - 1.5 Rise Time Fall Time tr td(off) nC see fig. 6 and 13 Gate-Drain Charge Turn-Off Delay Time pF VDD = 300 V, ID = 17 A, RG = 7.5 Ω, VGS = 10 V, see fig. 10b tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D S TJ = 25 °C, IS = 17 A, VGS = 0 Vb TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb TJ = 125 °C, IF = 17 A, dI/dt = 100 A/µsb www.kersemi.com V - 520 780 ns - 5620 8430 nC - 580 870 ns - 6470 9700 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating, pulse width limited by max. junction temperature. b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. 2 A G IRFB17N60K, SiHFB17N60K TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.kersemi.com 3 IRFB17N60K, SiHFB17N60K Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area www.kersemi.com IRFB17N60K, SiHFB17N60K RD VDS VGS D.U.T. RG + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + A - VDD A IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms www.kersemi.com 5 IRFB17N60K, SiHFB17N60K Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform 6 Fig. 13b - Gate Charge Test Circuit www.kersemi.com IRFB17N60K, SiHFB17N60K Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor curent Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel www.kersemi.com 7