Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZT955;FZT956 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 Amps continuous current 4 Very low saturation voltages 1 Base Excellent gain characteristics specified up to 3 Amps 1 2 Collector 3 2 +0.1 0.70-0.1 2.9 3 Emitter 4 Collector 4.6 Absolute Maximum Ratings Ta = 25 Parameter Symbol FZT955 FZT956 Unit Collector-Base Voltage VCBO -180 -220 V Collector-Emitter Voltage VCEO -140 -200 V Emitter-Base Voltage VEBO -6 -6 V ICM -10 -5 A Continuous Collector Current IC -4 -2 A Power Dissipation at Tamb=25 Ptot 3 3 W Tj:Tstg -55 to +150 -55 to +150 Peak Pulse Current Operating and Storage Temperature Range www.kexin.com.cn 1 Transistors SMD Type FZT955;FZT956 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Typ Max Unit -180 -210 V -180 -210 V Collector-Base Breakdown Voltage V(BR)CBO IC=-100ìA Collector-Emitter Breakdown Voltage V(BR)CER IC=-1ìA, RB Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA* -140 -170 V Emitter-Base Breakdown Voltage V(BR)EBO IE=-100ìA -6 -8 V Collector Cut-Off Current Collector Cut-Off Current (R ICBO 1kÙ) Emitter Cut-Off Current Collector-Emitter Saturation Voltage ICER IEBO VCE(sat) 1kÙ VCB=-150V -50 nA VCB=-150V,Tamb=100 -1 ìA VCB=-150V -50 nA VCB=-150V,Tamb=100 -1 ìA VEB=-6V -10 nA IC=-100mA, IB=-5mA* -30 -60 mV IC=-500mA,IB=-50mA* -70 -120 mV IC=-1A, IB=-100mA* -110 -150 mV IC=-3A, IB=-300mA* -275 -370 mV Base-Emitter Saturation Voltage VBE(sat) IC=-3A, IB=-300mA* -970 -1110 mV Base-Emitter Turn-On Voltage VBE(on) IC=-3A, VCE=-5V* -830 mV Static Forward Current Transfer Ratio hFE IC=-10mA, VCE=-5V* 100 200 IC=-1A, VCE=-5V* 100 200 IC=-3A, VCE=-5V* 75 140 300 10 IC=-100mA, VCE=-10V,f=50MHz 110 MHz Cobo VCB=-20V, f=1MHz 40 pF ton IC=-1A, IB1=-100mA 68 ns toff IB2=100mA, VCC=-50V 1030 ns fT Output Capacitance *Measured under pulsed conditions. Pulse width=300ìs. Duty cycle www.kexin.com.cn -950 IC=-10A, VCE=-5V* Transition Frequency Switching Times 2 Min 2%