Transistors SMD Type NPN Silicon Power Transistor FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 ■ Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-Base Voltage Parameter VCBO 15 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 V IC 3 A Continuous Collector Current Peak Pulse Current *1 ICM 12 A Power Dissipation at Tamb =25℃*2 Ptot 625 mW Tj:Tstg -55 to +150 ℃ Operating and Storage Temperature Range *1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle ≤2% *2.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm www.kexin.com.cn 1 Transistors SMD Type FMMT617TA ■ Electrical Characteristics Ta = 25℃ Parameter Test conditions Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=100μA 15 V Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA* 15 V Emitter-Base Breakdown Voltage V(BR)EBO IE=100μA 5 V Collector Cut-Off Current ICBO VCB=10V Emitter Cut-Off Current IEBO VEB=4V 100 nA Collector Emitter Cut-Off Current ICES VCES=10V 100 nA 100 IC=0.1A, IB=10mA* Collector-Emitter Saturation Voltage VCE(sat) nA 8 14 mV IC=1A, IB=10mA* 70 100 mV IC=3A, IB=50mA* 150 200 mV Base-Emitter Saturation Voltage VBE(sat) IC=3A, IB=50mA* 0.9 1.0 V Base-Emitter Turn-On Voltage VBE(om) IC=3A, VCE=2V* 0.84 1.0 V Static Forward Current Transfer Ratio hFE IC=10mA, VCE=2V* 200 415 IC=200mA, VCE=2V* 300 450 IC=3A, VCE=2V* 200 320 IC=5A, VCE=2V* 150 240 80 120 IC=12A, VCE =2V* Transition Frequency fT Output Capacitance Cobo IC=50mA, VCE=10V,f=50MHz VCB=10V, f=1MHz 80 30 MHZ 40 pF Turn-On Time t(on) VCC=10V, IC=3A 120 ns Turn-Off Time t(off) IB1=IB2=50mA 160 ns *Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2% 2 Typ www.kexin.com.cn