PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Benefits
FEATURES
Configuration:
x/'06%*0HJ[[
8 banks
x/'06%*0HJ[[
8 banks
DDR3 Integrated Module [iMOD]:
VDD=VDD4 999
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,2
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signals.
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iMOD Part Information
ORDER NUMBER
SPEED GRADE
DE
E
/'06%*[
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/'06%*[
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LOGIC Devices Incorporated
www.logicdevices.com
1
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FEATURES
FIGURE 1 - DDR3 PART NUMBERS
Sample Part Number:
L9D3
256M
32S
L9D3256M32SBG2I107
BG1
107
I
DDR3 iMOD
Code
Word = 256 MB
Speed Grade
15
1.5ns / 1333Mbps
125
1.25ns / 1600Mbps
107
1.07ns / 1800Mbps
Wordwidth
x32
S = Single Channel
PBGA
Temperature
Code
Commercial (0oC to 70oC)
C
Industrial (-40oC to 85oC)
I
o
o
Extended (-40 C to 105 C)
E
Military (-55oC to 125oC)
M
Note: Not all options can be combined. Please see our Part Catalog for available offerings.
TABLE 1: ADDRESSING
Parameter
256-512 Meg x 32
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0[
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5HIUHVK&RXQW
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LOGIC Devices Incorporated
www.logicdevices.com
2
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
STATE DIAGRAM
FIGURE 2 - SIMPLIFIED STATE DIAGRAM
CKE L
Power
applied
Power
on
Reset
Procedure
MRS, MPR,
write
leveling
Initialization
Self
refresh
SRE
ZQCL
MRS
SRX
From any
state
RESET
ZQ
Calibration
REF
ZQCL/ZQCS
Idle
Refreshing
PDE
ACT
PDX
Active
PowerDown
Preharge
PowerDown
Activating
PDX
CKE L
CKE L
PDE
Bank
Active
WRITE
WRITE
READ
WRITE AP
READ AP
READ
Writing
READ
Reading
WRITE
READ AP
WRITE AP
WRITE AP
READ AP
PRE, PREA
Writing
PRE, PREA
Preharging
PRE, PREA
Reading
Automatic
Sequence
Command
Sequence
ACT = ACTIVATE
MPR = Multipurpose register
MRS = Mode register set
PDE = Power-down entry
PDX = Power-down exit
PRE = PRECHARGE
LOGIC Devices Incorporated
www.logicdevices.com
PREA=PRECHARGE ALL
READ = RD, RDS4, RDS8
READ AP = RDAP, RDAPS4, RDAPS8
REF = REFRESH
RESET = START RESET PROCEDURE
SRE = Self refresh entry
3
SRX = Self refresh exit
WRITE = WR, WRS4, WRS8
WRITE AP = WRAP, WRAPS4, WRAPS8
ZQCL = ZQ LONG CALIBRATION
ZQCS = ZQ SHORT CALIBRATION
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
INDUSTRIAL TEMPERATURE
FUNCTIONAL DESCRIPTION
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strobes.
EXTENDED TEMPERATURE
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MILITARY, EXTREME OPERATING TEMPERATURE
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LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 3A- L9D3256M32SBG1 FUNCTIONAL BLOCK DIAGRAM
CS#
RESET#
ODT
WE#
RAS#, CAS#
CKE
CK, CK#
BA0-2
ADDR0-14
ADDR
BA
DM3
CK, CKE RAS, WE
CK#
CAS
ODT RESET CSA
DIE 1
DM2
DQ 7
DQ 0
ZQ1
240Ω ±1%
VSSQ
ADDR
BA
CK, CKE RAS, WE
CK#
CAS
DQS3, DQS3#
DQ 31
DQ 24
DQS2, DQS2#
DQ 23
DQ 16
DQS1, DQS1#
ODT RESET CSA
DIE 0
DM1
DQ 15
DQ 8
DQ 15
DQ 8
DQS0, DQS0#
DQ 7
DQ 0
DM0
ZQ2
240Ω ±1%
VSSQ
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 3B- L9D3512M32SBG1 FUNCTIONAL BLOCK DIAGRAM
CS#
RESET#
ODT
WE#
RAS#, CAS#
CKE
CK, CK#
BA0-2
ADDR0-15
ADDR
BA
CK, CKE RAS, WE
CK#
CAS
DM3
ODT RESET CSA
DIE 3
DQ 31
DQ 24
DQ 24-31
DQS3, DQS3#
VSSQ
ADDR
BA
CK, CKE RAS, WE
CK#
CAS
ODT RESET CSA
DIE 2
DM2
DQ 23
DQ 16
DQ 16-23
DQS2, DQS2#
VSSQ
DM1
DIE 1
DQ 15
DQ 8
DQ 8-15
DQS1, DQS1#
VSSQ
ADDR
BA
CK, CKE RAS, WE
CK#
CAS
ODT RESET CSA
DIE 0
DM0
DQ 7
DQ 0
DQ 0-7
DQS0, DQS0#
VSSQ
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
L9D3256M32SBG1
L9D3512M32SBG1
PRELIMINARY INFORMATION
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
BALL /SIGNAL LOCATION (PBGA)
FIGURE 4A - L9D3256M32SBG1 PINOUT TOP VIEW
LOGIC Devices Incorporated
1
2
3
4
A
VDD
VSS
VSSQ
B
VDDQ
DQ0
C
VDDQ
D
5
6
7
8
9
10
11
12
DQ1
DQ9
VSSQ
VSS
VDD
A
VSSQ
DQ3
DQ11
VSSQ
DQ8
VDDQ
B
DQ2
VSSQ
DM0
DM1
VSSQ
DQ10
VDDQ
C
VSSQ
VDDQ
DQS0
DQS0#
DQS1#
DQS1
VDDQ
VSSQ
D
E
VSSQ
DQ4
VDDQ
DQ5
DQ13
VDDQ
DQ12
VSSQ
E
F
VSS
DQ6
VDDQ
DQ7
DQ15
VDDQ
DQ14
VSS
F
G
VDDDL
NC
CAS#
RAS#
CK
CK#
CKE
VDD
G
H
RESET#
BA2
ODT
CS#
A10
A14
NC
NC
H
J
VREFDQ VSSDL
NC
WE#
A1
NC
VSS
VREFCA
J
K
BA0
A9
A2
A0
A4
A6
A12
BA1
K
L
VDD
A7
A5
A3
A8
A11
A13
VDD
L
M
VSS
DQ24
VDDQ
DQ25
DQ17
VDDQ
DQ16
VSS
M
N
VSSQ
DQ26
VDDQ
DQ27
DQ19
VDDQ
DQ18
VSSQ
N
P
VSSQ
VDDQ
DQS3
DQS3#
DQS2#
DQS2
VDDQ
VSSQ
P
R
VDDQ
DQ28
VSSQ
DM3
DM2
VSSQ
DQ20
VDDQ
R
T
VDDQ
DQ30
VSSQ
DQ29
DQ21
VSSQ
DQ22
VDDQ
T
U
VDD
VSS
VSSQ
DQ31
DQ23
VSSQ
VSS
VDD
U
1
2
3
4
9
10
11
12
5
6
7
8
GND (Core)
V + (Core Power)
UNPOPULATED
Address
GND (I/O)
V + (I/O Power)
Data IO
Address
CNTRL
Level REF
NC
Address
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
L9D3256M32SBG1
L9D3512M32SBG1
PRELIMINARY INFORMATION
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
BALL /SIGNAL LOCATION (PBGA)
FIGURE 4B - L9D3512M32SBG1 PINOUT TOP VIEW
1
2
3
4
A
VDD
VSS
VSSQ
B
VDDQ
DQ0
C
VDDQ
D
9
10
11
12
DQ1
DQ9
VSSQ
VSS
VDD
A
VSSQ
DQ3
DQ11
VSSQ
DQ8
VDDQ
B
DQ2
VSSQ
DM0
DM1
VSSQ
DQ10
VDDQ
C
VSSQ
VDDQ
DQS0
DQS0#
DQS1#
DQS1
VDDQ
VSSQ
D
E
VSSQ
DQ4
VDDQ
DQ5
DQ13
VDDQ
DQ12
VSSQ
E
F
VSS
DQ6
VDDQ
DQ7
DQ15
VDDQ
DQ14
VSS
F
G
VDDDLL
NC
CAS#
RAS#
CK
CK#
CKE
VDD
G
H
RESET#
BA2
ODT
CS#
A10
A14
A15
NC
H
J
VREFDQ VSSDLL
NC
WE#
A1
NC
VSS
VREFCA
J
6
7
8
K
BA0
A9
A2
A0
A4
A6
A12
BA1
K
L
VDD
A7
A5
A3
A8
A11
A13
VDD
L
M
VSS
DQ24
VDDQ
DQ25
DQ17
VDDQ
DQ16
VSS
M
N
VSSQ
DQ26
VDDQ
DQ27
DQ19
VDDQ
DQ18
VSSQ
N
P
VSSQ
VDDQ
DQS3
DQS3#
DQS2#
DQS2
VDDQ
VSSQ
P
R
VDDQ
DQ28
VSSQ
DM3
DM2
VSSQ
DQ20
VDDQ
R
T
VDDQ
DQ30
VSSQ
DQ29
DQ21
VSSQ
DQ22
VDDQ
T
U
VDD
VSS
VSSQ
DQ31
DQ23
VSSQ
VSS
VDD
U
1
2
3
4
9
10
11
12
GND (Core)
LOGIC Devices Incorporated
5
5
6
7
V + (Core Power)
8
UNPOPULATED
Address
GND (I/O)
V + (I/O Power)
Data IO
No Connect
CNTRL
Level REF
No Connect
No Connect
www.logicdevices.com
8
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 2A - L9D3256M32SBG1 BALL/SIGNAL LOCATION AND DESCRIPTION
Ball Assignments
.-././
Symbol
Type
A0, A1, A2,
Input Address Inputs: 3URYLGHWKH52:DGGUHVVIRU$&7,9$7(FRPPDQGVDQGWKHFROXPQDGGUHVV
.//.+/ A3, A4, A5,
./+
Description
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A6, A7, A8,
PHPRU\DUUD\LQWKHUHVSHFWLYHEDQN$10VDPSOHGGXULQJD35(&+$5*(FRPPDQGGHWHUPLQHV
A9, A10/AP,
ZKHWKHUWKH35(&+$5*(DSSOLHVWRRQHEDQN$10/2:EDQNVHOHFWHGE\%$>@RUDOOEDQNV
A11, A12 /
$10+,*+7KHDGGUHVVLQSXWVDOVRSURYLGHWKHRSFRGHGXULQJD/2$'02'(FRPPDQG
BCH, A13,
$GGUHVVLQSXWVDUHUHIHUHQFHGWR9UHI&$$12%&ZKHQHQDEOHGLQWKHPRGHUHJLVWHU05$12
A14
LVVDPSOHGGXULQJ5($'DQG:5,7(FRPPDQGVWRGHWHUPLQHZKHWKHUEXUVWFKRS/2: %&
EXUVWFKRS
..+
BA0, BA1,
BA2
Input Bank Address Inputs: %$>@GHILQHWKHEDQNWRZKLFKDQ$&7,9$7(5($':5,7(RU
35(&+$5*(FRPPDQGLVEHLQJDSSOLHG%$>@GHILQHZKLFKPRGHUHJLVWHU050, MR1, MR2, or
MR3LVORDGHGGXULQJWKH/2$'02'(FRPPDQG%$>@DUHUHIHUHQFHGWR9UHI&$
G9, G10
CK, CK\
Input Clock: &.[DQG&.[?DUHGLIIHUHQWLDOFORFNLQSXWVRQHGLIIHUHQWLDOSDLUSHU:25'IRXU:25'V
FRQWDLQHGLQWKH/'[[*SURGXFW$OOFRQWURODQGDGGUHVVLQSXWVLJQDOVDUHVDPSOHGRQWKH
FURVVLQJRIWKHSRVLWLYHHGJHRI&.[DQGWKHQHJDWLYHHGJHRI&.[?2XWSXWGDWDVWUREHV8'46[
8'46[?DQG/'46[/'46[?LVUHIHUHQFHGWRWKHFURVVLQJRI&.[DQG&.[?
G11
CKE
Input Clock Enable: &.(HQDEOHVDQGGLVDEOHVLQWHUQDOFLUFXLWU\DQGFORFNVRQWKH6'5$07KH
VSHFLILFFLUFXLWU\WKDWLVHQDEOHGGLVDEOHGLVGHSHQGHQWXSRQWKH''56'5$0FRQILJXUDWLRQDQG
RSHUDWLQJPRGH7DNLQJ&.(/2:SURYLGHV35(&+$5*(SRZHUGRZQDQG6(/)5()5(6+
RSHUDWLRQVDOOEDQNVLGOHRUDFWLYHSRZHUGRZQURZDFWLYHLQDQ\EDQN&.(LVV\QFKURQRXV
IRUSRZHUGRZQHQWU\DQGH[LWDQGIRUVHOIUHIUHVKHQWU\&.(LVDV\QFKURQRXVIRUVHOIUHIUHVK
H[LW,QSXWEXIIHUVH[FOXGLQJ&.[&.[?&.(5(6(7DQG2'7DUHGLVDEOHGGXULQJ6(/)
5()5(6+&.(LVUHIHUHQFHGWR9UHI&$
+
CS\
Input Chip Select: &6?HQDEOHVUHJLVWHUHG/2:DQGGLVDEOHVWKHFRPPDQGGHFRGHU$OOFRPPDQGV
DUHPDVNHGZKHQ&6?LVUHJLVWHUHG+,*+&6?SURYLGHVIRUH[WHUQDOUDQNVHOHFWLRQRQV\VWHPVZLWK
PXOWLSOH UDQNV&6?LVFRQVLGHUHGSDUWRIWKHFRPPDQGFRGH&6?LVUHIHUHQFHGWR9UHI&$
&&55
DM0, DM1, Input Input Data Mask: /'0[LVWKH/RZHUE\WHRID:25'8'0[LVWKH8SSHUE\WHRID:25'WKH
DM2, DM3
/'[[*FRQWDLQVIRXU:25'67KHGDWDPDVNLQSXWPDVNV:5,7(GDWD/RZHUE\WHGDWD
PDVNHGZKHQ/'0[LVVDPSOHG+,*+XSSHUE\WHGDWDPDVNHGZKHQ8'0[LVVDPSOHG+,*+
7KH8'0[DQG/'0[SLQVDUHVWUXFWXUHGDVLQSXWVRQO\WKHSLQVHOHFWULFDOORDGLQJLVGHVLJQHGWR
PDWFKWKDWRIWKH'4DQG/'46[?8'46[DQG8'46[?SLQV
*
RAS\
Input ROW Address Strobe/Select: 'HILQHVWKHFRPPDQGEHLQJHQWHUHGDORQJ&$6?:(?DQG&6?
7KLVLQSXWSLQLVUHIHUHQFHGWR9UHI&$
G3
CAS\
Input COLUMN Address Strobe/Select: 'HILQHVWKHFRPPDQGEHLQJHQWHUHGDORQJZLWK5$6?:(?
DQG&6?7KLVLQSXWSLQLVUHIHUHQFHGWR9UHI&$
-
WE\
Input WRITE Enable Input: 'HILQHVWKHFRPPDQGEHLQJHQWHUHGDORQJZLWK&$6?5$6?DQG&6?7KLV
LQSXWSLQLVUHIHUHQFHGWR9UHI&$
LOGIC Devices Incorporated
www.logicdevices.com
9
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 2A - L9D3256M32SBG1 BALL/SIGNAL LOCATION AND DESCRIPTION CONTINUED
Ball Assignments
Symbol
Type
+
ODT
Input
Description
On-Die Termination: 2'7HQDEOHVZKHQUHJLVWHUHG+,*+DQGGLVDEOHVWHUPLQDWLRQUHVLVWDQFHLQWHUQDOWRWKH''56'5$0:KHQHQDEOHGLQQRUPDORSHUDWLRQ2'7LVRQO\DSSOLHG
WRHDFKRIWKHIROORZLQJVLJQDOV'4>@/'4;[?8'46[?8'0[DQG/'0[7KH2'7
LQSXWLVLJQRUHGLIGLVDEOHGYLDWKH/2$'02'(UHJLVWHUFRPPDQG2'7LVUHIHUHQFHGWR
9UHI&$
+
RESET\
Input
RESET: $QLQSXWFRQWUROSLQDFWLYH/2:UHIHUHQFHGWR9VV7KH5(6(7?LQSXWUHFHLYHULV
D&026LQSXWGHILQHGDVDUDLOWRUDLOVLJQDOZLWK'&+,*+t 0.8 x VDDDQG'&/2:d 0.2 x
VDD45(6(7?DVVHUWLRQDQGGHDVVHUWLRQDUHDV\QFKURQRXV
''
DQS0, DQS0# Input
Data Strobe, LOW Byte (per WORD): 2XWSXWHGJHDOLJQHGZLWK5($'GDWD,QSXWFHQWHU
DOLJQHGZLWK:5,7(GDWD
D10, D9
DQS1, DQS1# Input
Data Strobe, HIGH Byte (per WORD): 2XWSXWHGJHDOLJQHGZLWK5($'GDWD,QSXWFHQWHU
DOLJQHGZLWK:5,7(GDWD
%$&%((
DQ0, DQ1,
))
DQ2, DQ3,
I/O
Data Input/Output: /2:%\WH/2::25':25'3LQUHIHUHQFHGWR9UHI'4
I/O
Data Input/Output: +,*+%\WH/2::25':25'3LQUHIHUHQFHGWR9UHI'4
I/O
Data Input/Output: /2:%\WH:25'3LQUHIHUHQFHGWR9UHI'4
I/O
Data Input/Output: +,*+%\WH:25'3LQUHIHUHQFHGWR9UHI'4
DQ4, DQ5,
DQ6, DQ7
%$&%(
DQ8, DQ9,
())
DQ10, DQ11,
DQ12, DQ13,
DQ14, DQ15
M11, M9, N11, N9, R11,
DQ16, DQ17,
778
DQ18, DQ19,
DQ20, DQ21,
DQ22, DQ23
001157
DQ24, DQ25,
78
DQ26, DQ27,
DQ28, DQ29,
DQ30, DQ31
-
VrefCA
Supply 9ROWDJH5HIHUHQFH&25(9UHI&$PXVWEHPDLQWDLQHGDWDOOWLPHV
-
VrefDQ
Supply 9ROWDJH5HIHUHQFH,29UHI'4PXVWEHPDLQWDLQHGDWDOOWLPHV
LOGIC Devices Incorporated
www.logicdevices.com
10
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 2A - L9D3256M32SBG1 BALL/SIGNAL LOCATION AND DESCRIPTION CONTINUED
Ball Assignments
Symbol
$$*//
VDD
Type
Description
Supply 3RZHU6XSSO\99
88
B1, B12, C1, C12, D2,
VDDQ
Supply 'DWD,26XSSO\99
'(())
00113
35577
$$))-
Vss
Supply Ground
0088
$$%%&
VssQ
Supply 'DWD,2*URXQG,VRODWHGIURP&RUHIRULPSURYHGQRLVHLPPXQLW\
&''((
11335
57788
-
VSSDL
Ground for DLL
G1
VDDDL
6XSSO\IRU'//
*++--
NC
LOGIC Devices Incorporated
www.logicdevices.com
1R&RQQHFW
11
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 2B - L9D3512M32SBG1 BALL/SIGNAL LOCATION AND DESCRIPTION
Ball Assignments
Symbol
Type
.-././
A0, A1, A2,
Input Address Inputs: 3URYLGHWKH52:DGGUHVVIRU$&7,9$7(FRPPDQGVDQGWKHFROXPQDGGUHVV
.//.+/ A3, A4, A5,
./++
Description
DQGDXWRSUHFKDUJHELW$10IRU5($'<:5,7(FRPPDQGVWRVHOHFWRQHORFDWLRQRXWRIWKH
A6, A7, A8,
PHPRU\DUUD\LQWKHUHVSHFWLYHEDQN$10VDPSOHGGXULQJD35(&+$5*(FRPPDQGGHWHUPLQHV
A9, A10/AP,
ZKHWKHUWKH35(&+$5*(DSSOLHVWRRQHEDQN$10/2:EDQNVHOHFWHGE\%$>@RUDOOEDQNV
A11, A12 /
BCH, A13,
A14, A15
$10+,*+7KHDGGUHVVLQSXWVDOVRSURYLGHWKHRSFRGHGXULQJD/2$'02'(FRPPDQG
$GGUHVVLQSXWVDUHUHIHUHQFHGWR9UHI&$$12%&ZKHQHQDEOHGLQWKHPRGHUHJLVWHU05$12
LVVDPSOHGGXULQJ5($'DQG:5,7(FRPPDQGVWRGHWHUPLQHZKHWKHUEXUVWFKRS/2: %&
EXUVWFKRS
..+
BA0, BA1,
BA2
Input Bank Address Inputs: %$>@GHILQHWKHEDQNWRZKLFKDQ$&7,9$7(5($':5,7(RU
35(&+$5*(FRPPDQGLVEHLQJDSSOLHG%$>@GHILQHZKLFKPRGHUHJLVWHU050, MR1, MR2, or
MR3LVORDGHGGXULQJWKH/2$'02'(FRPPDQG%$>@DUHUHIHUHQFHGWR9UHI&$
G9, G10
CK, CK\
Input Clock: &.[DQG&.[?DUHGLIIHUHQWLDOFORFNLQSXWVRQHGLIIHUHQWLDOSDLUSHU:25'IRXU:25'V
FRQWDLQHGLQWKH/'[[*SURGXFW$OOFRQWURODQGDGGUHVVLQSXWVLJQDOVDUHVDPSOHGRQWKH
FURVVLQJRIWKHSRVLWLYHHGJHRI&.[DQGWKHQHJDWLYHHGJHRI&.[?2XWSXWGDWDVWUREHV8'46[
8'46[?DQG/'46[/'46[?LVUHIHUHQFHGWRWKHFURVVLQJRI&.[DQG&.[?
G11
CKE
Input Clock Enable: &.(HQDEOHVDQGGLVDEOHVLQWHUQDOFLUFXLWU\DQGFORFNVRQWKH6'5$07KH
VSHFLILFFLUFXLWU\WKDWLVHQDEOHGGLVDEOHGLVGHSHQGHQWXSRQWKH''56'5$0FRQILJXUDWLRQDQG
RSHUDWLQJPRGH7DNLQJ&.(/2:SURYLGHV35(&+$5*(SRZHUGRZQDQG6(/)5()5(6+
RSHUDWLRQVDOOEDQNVLGOHRUDFWLYHSRZHUGRZQURZDFWLYHLQDQ\EDQN&.(LVV\QFKURQRXV
IRUSRZHUGRZQHQWU\DQGH[LWDQGIRUVHOIUHIUHVKHQWU\&.(LVDV\QFKURQRXVIRUVHOIUHIUHVK
H[LW,QSXWEXIIHUVH[FOXGLQJ&.[&.[?&.(5(6(7DQG2'7DUHGLVDEOHGGXULQJ6(/)
5()5(6+&.(LVUHIHUHQFHGWR9UHI&$
+
CS\
Input Chip Select: &6?HQDEOHVUHJLVWHUHG/2:DQGGLVDEOHVWKHFRPPDQGGHFRGHU$OOFRPPDQGV
DUHPDVNHGZKHQ&6?LVUHJLVWHUHG+,*+&6?SURYLGHVIRUH[WHUQDOUDQNVHOHFWLRQRQV\VWHPVZLWK
PXOWLSOH UDQNV&6?LVFRQVLGHUHGSDUWRIWKHFRPPDQGFRGH&6?LVUHIHUHQFHGWR9UHI&$
&&55
DM0, DM1, Input Input Data Mask: /'0[LVWKH/RZHUE\WHRID:25'8'0[LVWKH8SSHUE\WHRID:25'WKH
DM2, DM3
/'[[*FRQWDLQVIRXU:25'67KHGDWDPDVNLQSXWPDVNV:5,7(GDWD/RZHUE\WHGDWD
PDVNHGZKHQ/'0[LVVDPSOHG+,*+XSSHUE\WHGDWDPDVNHGZKHQ8'0[LVVDPSOHG+,*+
7KH8'0[DQG/'0[SLQVDUHVWUXFWXUHGDVLQSXWVRQO\WKHSLQVHOHFWULFDOORDGLQJLVGHVLJQHGWR
PDWFKWKDWRIWKH'4DQG/'46[?8'46[DQG8'46[?SLQV
*
RAS\
Input ROW Address Strobe/Select: 'HILQHVWKHFRPPDQGEHLQJHQWHUHGDORQJ&$6?:(?DQG&6?
7KLVLQSXWSLQLVUHIHUHQFHGWR9UHI&$
G3
CAS\
Input COLUMN Address Strobe/Select: 'HILQHVWKHFRPPDQGEHLQJHQWHUHGDORQJZLWK5$6?:(?
DQG&6?7KLVLQSXWSLQLVUHIHUHQFHGWR9UHI&$
-
WE\
Input WRITE Enable Input: 'HILQHVWKHFRPPDQGEHLQJHQWHUHGDORQJZLWK&$6?5$6?DQG&6?7KLV
LQSXWSLQLVUHIHUHQFHGWR9UHI&$
LOGIC Devices Incorporated
www.logicdevices.com
12
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 2B - L9D3512M32SBG1 BALL/SIGNAL LOCATION AND DESCRIPTION CONTINUED
Ball Assignments
Symbol
Type
+
ODT
Input
Description
On-Die Termination: 2'7HQDEOHVZKHQUHJLVWHUHG+,*+DQGGLVDEOHVWHUPLQDWLRQUHVLVWDQFHLQWHUQDOWRWKH''56'5$0:KHQHQDEOHGLQQRUPDORSHUDWLRQ2'7LVRQO\DSSOLHG
WRHDFKRIWKHIROORZLQJVLJQDOV'4>@/'4;[?8'46[?8'0[DQG/'0[7KH2'7
LQSXWLVLJQRUHGLIGLVDEOHGYLDWKH/2$'02'(UHJLVWHUFRPPDQG2'7LVUHIHUHQFHGWR
9UHI&$
+
RESET\
Input
RESET: $QLQSXWFRQWUROSLQDFWLYH/2:UHIHUHQFHGWR9VV7KH5(6(7?LQSXWUHFHLYHULV
D&026LQSXWGHILQHGDVDUDLOWRUDLOVLJQDOZLWK'&+,*+t 0.8 x VDDDQG'&/2:d 0.2 x
VDD45(6(7?DVVHUWLRQDQGGHDVVHUWLRQDUHDV\QFKURQRXV
''
DQS0, DQS0# Input
Data Strobe, LOW Byte (per WORD): 2XWSXWHGJHDOLJQHGZLWK5($'GDWD,QSXWFHQWHU
DOLJQHGZLWK:5,7(GDWD
D10, D9
DQS1, DQS1# Input
Data Strobe, HIGH Byte (per WORD): 2XWSXWHGJHDOLJQHGZLWK5($'GDWD,QSXWFHQWHU
DOLJQHGZLWK:5,7(GDWD
%$&%((
DQ0, DQ1,
))
DQ2, DQ3,
I/O
Data Input/Output: /2:%\WH/2::25':25'3LQUHIHUHQFHGWR9UHI'4
I/O
Data Input/Output: +,*+%\WH/2::25':25'3LQUHIHUHQFHGWR9UHI'4
I/O
Data Input/Output: /2:%\WH:25'3LQUHIHUHQFHGWR9UHI'4
I/O
Data Input/Output: +,*+%\WH:25'3LQUHIHUHQFHGWR9UHI'4
DQ4, DQ5,
DQ6, DQ7
%$&%(
DQ8, DQ9,
())
DQ10, DQ11,
DQ12, DQ13,
DQ14, DQ15
M11, M9, N11, N9, R11,
DQ16, DQ17,
778
DQ18, DQ19,
DQ20, DQ21,
DQ22, DQ23
001157
DQ24, DQ25,
78
DQ26, DQ27,
DQ28, DQ29,
DQ30, DQ31
-
VrefCA
Supply 9ROWDJH5HIHUHQFH&25(9UHI&$PXVWEHPDLQWDLQHGDWDOOWLPHV
-
VrefDQ
Supply 9ROWDJH5HIHUHQFH,29UHI'4PXVWEHPDLQWDLQHGDWDOOWLPHV
LOGIC Devices Incorporated
www.logicdevices.com
13
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 2A - L9D3256M32SBG1 BALL/SIGNAL LOCATION AND DESCRIPTION CONTINUED
Ball Assignments
Symbol
$$*//
VDD
Type
Description
Supply 3RZHU6XSSO\99
88
B1, B12, C1, C12, D2,
VDDQ
Supply 'DWD,26XSSO\99
'(())
00113
35577
$$))-
Vss
Supply Ground
0088
$$%%&
VssQ
Supply 'DWD,2*URXQG,VRODWHGIURP&RUHIRULPSURYHGQRLVHLPPXQLW\
&''((
11335
57788
-
VSSDL
Ground for DLL
G1
VDDDL
6XSSO\IRU'//
*+--
NC
LOGIC Devices Incorporated
www.logicdevices.com
1R&RQQHFW
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 5 - MECHANICAL DRAWING
[120
Ø
PP
$
B
C
D
(
F
G
+
12.8 NOM
K
L
M
N
3
R
T
8
/'06%*
0.8 NOM
0.8 NOM
/'06%*
8.8 NOM
1RWH$OOGLPHQVLRQVLQPP
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
L9D3256M32SBG1
L9D3512M32SBG1
PRELIMINARY INFORMATION
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 3: ABSOLUTE MAXIMUM RATINGS
Symbol
MIN
MAX
UNITS
NOTES
VDD
VDD6XSSO\9ROWDJHUHODWLYHWR9ss
Parameter
V
1
VDDQ
VDD6XSSO\9ROWDJHUHODWLYHWR9ssQ
V
1
VIN, V287
9ROWDJHRQDQ\SLQUHODWLYHWR9ss
V
1
II
,QSXWOHDNDJHFXUUHQW
$
I95()
V5()VXSSO\OHDNDJHFXUUHQW
-2
2
$
2
T$Industrial
2SHUDWLQJ$PELHQW7HPSHUDWXUH
°C
T$([WHQGHG
2SHUDWLQJ$PELHQW7HPSHUDWXUH
°C
T$0LOWHPS
2SHUDWLQJ$PELHQW&DVH7HPSHUDWXUH
°C
TSTG
6WRUDJH7HPSHUDWXUH
°C
127(6
1. VDD and VDD4PXVWEHZLWKLQP9RIHDFKRWKHUDWDOOWLPHVDQG95()PXVWQRWEHJUHDWHUWKDQ[9DD4:KHQ9DD and
VDD4DUHOHVVWKDQ0995()PD\EHdP9
7KHPLQLPXPOLPLWUHTXLUHPHQWLVIRUWHVWLQJSXUSRVHV7KHOHDNDJHFXUUHQWRQWKH95()SLQVKRXOGEHPLQLPDO
0D[RSHUDWLQJDPELHQWWHPSHUDWXUHT$LVPHDVXUHGLQWKHFHQWHURIWKHSDFNDJH
'HYLFH)XQFWLRQDOLW\LVQRWJXDUDQWHHGLIWKH'5$0GHYLFHH[FHHGVWKH0D[LPXP7$GXULQJRSHUDWLRQ
TABLE 4: INPUT/OUTPUT CAPACITANCE
Capacitance Parameter
PACKAGE OUTLINE DIMENSIONS
Symbol
MIN
&.DQG&.?
CCK
0.8
S)
6LQJOHHQG,2'4'0
C10
8.8
S)
2
'LIIHUHQWLDO,2'46'46?
C10
8.8
S)
3
C,B6KDUHG
0.8
S)
,QSXWV5$6?&$6?:(?&6?&.(5(6(7?$''5%$
MAX (256M) MAX (512M)
UNITS
NOTES
127(6
1. VDD 9P999DDQ = VDD, V5() = VssI 0+]T$ °C, V287 (DC [9DDQ, V287SHDNWRSHDN 9
'0LQSXWLVJURXSHGZLWK,2SLQVUHIOHFWLQJWKHVLJQDOLVJURXSHGZLWK'4DQGWKHUHIRUHPDWFKHGLQORDGLQJ
3. CCCQSLVIRU'46YV'46?
&DIO &,2'4[&,2>'46@&,2>'46?@
([FOXGHV&.&.?
&DI_CNTL &,&17/[&&.>&.@&&.>&.?@&17/ 2'7&6?DQG&.(
&',B&0'B$''5 &,&0'B$''5[&&.>&.@&&.>&.?@&0' 5$6?&$6?DQG:(?$''5 >Q@
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 5: TIMING PARAMETERS FOR IDD MEASUREMENTS - CLOCK UNITS
IDD Parameter
DDR3-1333
DDR3-1600
DDR3-1866
-15
-12
-11
9-9-9
11-11-11
13-13-13
t&.0,1,DD
ns
CL IDD
10
11
13
CK
t5&'0,1,DD
10
11
13
CK
W5&0,1,DD
39
CK
t5$60,1,DD
28
32
CK
10
11
13
CK
30
32
33
CK
t530,1,DD
t)$:
[
tRRD IDD
[
tRFC
LOGIC Devices Incorporated
CK
208
CK
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
ODT
WE\
CAS\
RAS\
Sub-Loop
CKE
www.logicdevices.com
1
2
3
4
5
6
7
BA [2:0]
Cycle
Number
0
A [15:11]
PRE
A [10]
0
1
1
1
1
A [9:7]
ACT
D
D
D\
D\
0
PRE
A [6:3]
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
1
1
0
0
0
0
0
0
Repeat cycles 1 through 4 until n RAS - 1, truncate if needed
0
1
0
0
0
0
0
0
0
Repeat cycles 1 through 4 until n RC - 1, truncate if needed
0
1
1
0
0
0
0
0
F
0
0
0
0
0
0
0
0
F
0
0
0
0
0
0
0
0
F
1
1
1
0
0
0
0
0
F
1
1
1
0
0
0
0
0
F
Repeat cycles n RC +1 through n RC +4 until n RC - 1 + n RAS - 1, truncate if needed
0
1
0
0
0
0
0
0
F
Repeat cycles n RC +1 through n RC +4 until 2 x RC - 1, truncate if needed
Repeat sub-loop 0, use BA [2:0] = 1
Repeat sub-loop 0, use BA [2:0] = 2
Repeat sub-loop 0, use BA [2:0] = 3
Repeat sub-loop 0, use BA [2:0] = 4
Repeat sub-loop 0, use BA [2:0] = 5
Repeat sub-loop 0, use BA [2:0] = 6
Repeat sub-loop 0, use BA [2:0] = 7
CK, CK\
18
0
0
0
0
0
0
0
0
0
0
0
0
A [2:0]
0
0
0
1
1
-
-
-
-
Data
0
0
1
1
1
1
Command
ACT
D
D
D\
D\
CS\
0
1
2
3
4
n RAS
n RC
n RC + 1
n RC + 2
n RC + 3
n RC + 4
n RC + n RAS
2 x nRC
4 x n RC
6 x n RC
8 x n RC
10 x n RC
12 x n RC
14 x n RC
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 6: IDD0 MEASUREMENT LOOP
Static HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
Cycle
Number
Sub-Loop
CKE
CK, CK\
LOGIC Devices Incorporated
www.logicdevices.com
19
2 x n RC
2 x n RC
2 x n RC
2 x n RC
2 x n RC
2 x n RC
2 x n RC
Command
1
2
3
4
5
6
7
CS\
0
1
1
1
1
0
0
ACT
D
D
D\
D\
RD
PRE
0
RAS\
PRE
0
1
0
0
0
1
1
0
CAS\
0
WE\
1
ODT
0
BA [2:0]
RD
A [15:11]
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
1
0
0
0
0
0
0
Repeat cycles 1 through 4 until nRCD - 1, truncate if needed
0
1
0
0
0
0
0
0
Repeat cycles 1 through 4 until nRAS - 1, truncate if needed
1
0
0
0
0
0
0
0
Repeat cycles 1 through 4 until nRC - 1, truncate if needed
1
1
0
0
0
0
0
F
0
0
0
0
0
0
0
F
0
0
0
0
0
0
0
F
1
1
0
0
0
0
0
F
1
1
0
0
0
0
0
F
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRCD - 1, truncate if needed
0
1
0
0
0
0
0
F
Repeat cycles nRC + 1 through nRC + 4 until nRC + nRAS - 1, truncate if needed
1
0
0
0
0
0
0
F
Repeat cycle nRC + 1 through nRC + 4 until 2 x nRC - 1, truncate if needed
Repeat sub-loop 0, use BA [2:0] = 1
Repeat sub-loop 0, use BA [2:0] = 2
Repeat sub-loop 0, use BA [2:0] = 3
Repeat sub-loop 0, use BA [2:0] = 4
Repeat sub-loop 0, use BA [2:0] = 5
Repeat sub-loop 0, use BA [2:0] = 6
Repeat sub-loop 0, use BA [2:0] = 7
A [10]
1
0
0
1
1
A [9:7]
0
0
0
1
1
A [6:3]
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A [2:0]
ACT
D
D
D\
D\
-
00110011
-
-
00000000
-
Data
0
1
2
3
4
n RCD
n RAS
n RC
n RC +1
nRC +2
n RC +3
n RC +4
n RC + nRCD
n RC + nRAS
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 7: IDD1 MEASUREMENT LOOP
Static HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 8: IDD MEASUREMENT CONDITIONS FOR POWER-DOWN CURRENTS
IDD2P0
IDD2P1
IDD2Q
Precharge Power- Precharge PowerPrecharge Quiet
Down Current
Down Current
Standby Current
(Slow Exit)
(Fast Exit)
Name
7LPLQJ3DWWHUQ
&.(
([WHUQDO&ORFN
IDD3P
Active PowerDown Current
QD
QD
QD
QD
/2:
/2:
+,*+
/2:
Toggling
Toggling
Toggling
Toggling
tCK
t&.0,1,DD
t&.0,1,DD
t&.0,1,DD
t&.0,1,DD
tRC
Q?D
Q?D
Q?D
Q?D
t5$6
Q?D
Q?D
Q?D
Q?D
tRCD
Q?D
Q?D
Q?D
Q?D
tRRD
Q?D
Q?D
Q?D
Q?D
tRC
Q?D
Q?D
Q?D
Q?D
CL
Q?D
Q?D
Q?D
Q?D
$/
Q?D
Q?D
Q?D
Q?D
&6?
+,*+
+,*+
+,*+
+,*+
&RPPDQG,QSXWV
/2:
/2:
/2:
/2:
52:&2/801$GGU
/2:
/2:
/2:
/2:
%DQN$GGUHVV
/2:
/2:
/2:
/2:
DM
/2:
/2:
/2:
/2:
'DWD,2
0LGOHYHO
0LGOHYHO
0LGOHYHO
0LGOHYHO
2XWSXW%XIIHU'4'46
(QDEOHG
(QDEOHG
(QDEOHG
(QDEOHG
(QDEOHG2))
(QDEOHG2))
(QDEOHG2))
(QDEOHG2))
8
8
8
8
ODT
%XUVW/HQJWK
None
None
None
None
,'/(%DQNV
$OO
$OO
$OO
$OO
6SHFLDO1RWHV
Q?D
Q?D
Q?D
Q?D
$&7,9(%DQNV
LOGIC Devices Incorporated
www.logicdevices.com
20
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
A [15:11]
BA [2:0]
ODT
WE\
CAS\
RAS\
CKE
CK, CK\
www.logicdevices.com
0
0
0
0
0
0
F
F
0
1
2
3
4
5
6
7
D
D
D\
D\
Cycle
Number
Sub-Loop
LOGIC Devices Incorporated
0
0
0
0
Command
0
1
2
3
4-7
8-11
12-15
16-19
20-23
24-27
28-31
CS\
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Repeat sub-loop 0, use BA [2:0] = 1
Repeat sub-loop 0, use BA [2:0] = 2
Repeat sub-loop 0, use BA [2:0] = 3
Repeat sub-loop 0, use BA [2:0] = 4
Repeat sub-loop 0, use BA [2:0] = 5
Repeat sub-loop 0, use BA [2:0] = 6
Repeat sub-loop 0, use BA [2:0] = 7
A [10]
0
0
1
1
A [9:7]
0
0
1
1
A [6:3]
0
0
1
1
A [2:0]
1
1
1
1
Data
-
TABLE 9: IDD2N / IDD3N MEASUREMENT LOOP
Static HIGH
Toggling
21
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
D
D
D\
D\
A [15:11]
BA [2:0]
ODT
WE\
CAS\
RAS\
CS\
Sub-Loop
CKE
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
1
0
0
0
0
Repeat sub-loop 0, use BA [2:0] = 1; ODT = 0
Repeat sub-loop 0, use BA [2:0] = 2; ODT = 1
Repeat sub-loop 0, use BA [2:0] = 3; ODT = 1
Repeat sub-loop 0, use BA [2:0] = 4; ODT = 0
Repeat sub-loop 0, use BA [2:0] = 5; ODT = 0
Repeat sub-loop 0, use BA [2:0] = 6; ODT = 1
Repeat sub-loop 0, use BA [2:0] = 7; ODT = 1
A [10]
0
0
1
1
0
0
0
0
A [9:7]
0
0
1
1
0
0
F
F
A [6:3]
1
1
1
1
0
0
0
0
A [2:0]
1
2
3
4
5
6
7
Command
Cycle
Number
0
1
2
3
4-7
8-11
12-15
16-19
20-23
24-27
28-31
-
Data
0
PRELIMINARY INFORMATION
CK, CK\
22
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 10: IDD2NT MEASUREMENT LOOP
Static HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
BA [2:0]
ODT
WE\
CAS\
RAS\
CS\
Sub-Loop
CKE
CK, CK\
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Repeat sub-loop 0, use BA [2:0] = 1
Repeat sub-loop 0, use BA [2:0] = 2
Repeat sub-loop 0, use BA [2:0] = 3
Repeat sub-loop 0, use BA [2:0] = 4
Repeat sub-loop 0, use BA [2:0] = 5
Repeat sub-loop 0, use BA [2:0] = 6
Repeat sub-loop 0, use BA [2:0] = 7
A [15:11]
1
0
1
1
1
0
1
1
A [10]
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
A [9:7]
1
0
1
1
1
0
1
1
0
0
0
0
F
F
F
F
A [6:3]
0
1
1
1
0
1
1
1
0
0
0
0
0
0
0
0
A [2:0]
1
2
3
4
5
6
7
RD
D
D\
D\
RD
D
D\
D\
00000000
00110011
-
Data
0
Command
Cycle
Number
0
1
2
3
4
5
6
7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
PRELIMINARY INFORMATION
23
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 11: IDD4R MEASUREMENT LOOP
Static HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
BA [2:0]
ODT
WE\
CAS\
RAS\
CS\
Sub-Loop
CKE
CK, CK\
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
Repeat sub-loop 0, use BA [2:0] = 1
Repeat sub-loop 0, use BA [2:0] = 2
Repeat sub-loop 0, use BA [2:0] = 3
Repeat sub-loop 0, use BA [2:0] = 4
Repeat sub-loop 0, use BA [2:0] = 5
Repeat sub-loop 0, use BA [2:0] = 6
Repeat sub-loop 0, use BA [2:0] = 7
A [15:11]
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
A [10]
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
A [9:7]
1
0
1
1
1
0
1
1
0
0
0
0
F
F
F
F
A [6:3]
0
1
1
1
0
1
1
1
0
0
0
0
0
0
0
0
A [2:0]
1
2
3
4
5
6
7
WR
D
D\
D\
WR
D
D\
D\
00000000
00110011
-
Data
0
Command
Cycle
Number
0
1
2
3
4
5
6
7
8-15
16-23
24-31
32-39
40-47
48-55
56-63
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 12: IDD4W MEASUREMENT LOOP
Stac HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
REF
D
D
D\
D\
Cycle
Number
0
1
2
3
4
5-8
9-12
13-16
17-20
21-24
25-28
29-32
33-n RFC-1
Sub-Loop
CKE
CK, CK\
1b
1c
1d
1e
1f
1g
1h
2
1a
Command
0
A [9:7]
A [10]
A [15:11]
BA [2:0]
ODT
WE\
CAS\
Repeat sub-loop 1a, use BA [2:0] = 1
Repeat sub-loop 1a, use BA [2:0] = 2
Repeat sub-loop 1a, use BA [2:0] = 3
Repeat sub-loop 1a, use BA [2:0] = 4
Repeat sub-loop 1a, use BA [2:0] = 5
Repeat sub-loop 1a, use BA [2:0] = 6
Repeat sub-loop 1a, use BA [2:0] = 7
Repeat sub-loop 1a through 1h until
n RFC - 1, truncate if needed
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 13: IDD5B MEASUREMENT LOOP
Data
A [2:0]
A [6:3]
RAS\
CS\
Static HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
PACKAGE OUTLINE DIMENSIONS
TABLE 14: IDD MEASUREMENT LOOP
Industrial Range
T$ &WR&
([WHQGHGRU0LO7HPSHUDWXUH5DQJH
T$ &WR&RU&WR&
IDD6: Self Refresh
Current
IDD6E/M: Self Refresh
Current
IDD8: Reset
&.(
/2:
/2:
0LGOHYHO
([WHUQDO&ORFN
2II&.DQG&.? /2:
2II&.DQG&.? /2:
0LGOHYHO
tCK
Q?D
Q?D
Q?D
IDD Test
tRC
Q?D
Q?D
Q?D
t5$6
Q?D
Q?D
Q?D
tRCD
Q?D
Q?D
Q?D
tRRD
Q?D
Q?D
Q?D
tRC
Q?D
Q?D
Q?D
CL
Q?D
Q?D
Q?D
$/
Q?D
Q?D
Q?D
&6?
0LGOHYHO
0LGOHYHO
0LGOHYHO
&RPPDQG,QSXWV
0LGOHYHO
0LGOHYHO
0LGOHYHO
52:&2/081DGGUHVVHV
0LGOHYHO
0LGOHYHO
0LGOHYHO
%$1.DGGUHVVHV
0LGOHYHO
0LGOHYHO
0LGOHYHO
'DWD,2
0LGOHYHO
0LGOHYHO
0LGOHYHO
2XWSXWEXIIHU'4'46
(QDEOHG
(QDEOHG
0LGOHYHO
ODT
(QDEOHG0LGOHYHO
(QDEOHG0LGOHYHO
0LGOHYHO
%XUVW/HQJWK
Q?D
Q?D
Q?D
$FWLYH%$1.6
Q?D
Q?D
None
,'/(%$1.6
Q?D
Q?D
$OO
SRT
'LVDEOHGQRUPDO
(QDEOHGH[WHQGHG
Q?D
$65
Disabled
Disabled
Q?D
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
Sub-Loop
CKE
www.logicdevices.com
CK, CK\
19
15
16
17
18
14
12
13
11
10
9
5
6
7
8
Cycle
Number
0
0
1
ACT
RDA
D
D
1
1
0
0
1
ACT
RDA
D
D
1
D
RAS\
1
0
0
0
1
0
0
1
0
0
0
CAS\
D
WE\
0
1
0
ODT
4
0
0
1
ACT
RDA
D
BA [2:0]
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
Repeat cycle 2 until n RRD - 1
1
1
0
1
0
0
0
0
1
0
1
0
1
0
0
0
0
1
0
0
0
Repeat cycle n RRD + 2 until 2 x n RRD - 1
Repeat sub-loop 0, use BA[2:0] = 2
Repeat sub-loop 0, use BA[2:0] = 3
0
0
0
3
0
0
0
Repeat cycle 4 x n RRD until n FAW - 1, if needed
Repeat sub-loop 0, use BA[2:0] = 4
Repeat sub-loop 1, use BA[2:0] = 5
Repeat sub-loop 0, use BA[2:0] = 6
Repeat sub-loop 1, use BA[2:0] = 7
0
0
0
7
0
0
0
Repeat cycle n FAW + 4 x n RRD until 2 x n FAW - 1, if needed
1
1
0
0
0
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
Repeat cycle 2 x n FAW + 2 until 2 x n FAW + n RRD - 1
1
1
0
1
0
0
0
0
1
0
1
0
1
0
0
0
0
1
0
0
0
Repeat cycle 2 x n FAW + n RRD + 2 until 2 x n FAW + 2 x n RRD - 1
Repeat sub-loop 10, use BA[2:0] = 2
Repeat sub-loop 11, use BA[2:0] = 3
0
0
0
3
0
0
0
Repeat cycle 2 x n FAW + 4 x n RRD until 3 x n FAW - 1, if needed
Repeat sub-loop 10, use BA[2:0] = 4
Repeat sub-loop 11, use BA[2:0] = 5
Repeat sub-loop 10, use BA[2:0] = 6
Repeat sub-loop 11, use BA[2:0] = 7
0
0
0
7
0
0
0
Repeat cycle 3 x n FAW + 4 x n RRD until 4 x n FAW - 1, if needed
A [15:11]
1
1
0
A [10]
1
0
0
A [9:7]
0
1
0
0
0
0
0
0
F
F
F
F
F
F
F
F
0
0
0
A [6:3]
2
3
0
0
1
Command
ACT
RDA
D
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
A [2:0]
1
CS\
0
1
2
3
n RRD
n RRD + 1
n RRD + 2
n RRD + 3
2 x n RRD
3x n RRD
4 x n RRD
4 x n RRD + 1
n FAW
n FAW + n RRD
n FAW + 2xn RRD
n FAW + 3xn RRD
n FAW + 4xn RRD
n FAW + 4xn RRD+1
2 x n FAW
2 x n FAW + 1
2 x n FAW + 2
2 x n FAW + 3
2 x n FAW + n RRD
2 x n FAW + n RRD+1
2 x n FAW + n RRD+2
2 x n FAW + n RRD+3
2 x nFAW + 2x n RRD
2 x n FAW + 3x n RRD
2 x n FAW + 4x n RRD
2 x n FAW+4x n RRD+1
3 x nFAW
3 x nFAW + nRRD
3 x nFAW + 2x nRRD
3 x nFAW + 3x nRRD
3 x nFAW + 4x nRRD
3 x nFAW + 4x nRRD +1
-
00000000
-
00110011
-
-
-
00110011
-
00000000
-
Data
0
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 15: IDD7 MEASUREMENT LOOP
Static HIGH
Toggling
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 16A: IDD MAXIMUM LIMITS (256M)
Speed Bin
IDD
DDR3-1333
DDR3-1600
DDR3-1866
UNITS
IDD0
IDD1
IDD3
IDD3
IDD2Q
IDD2N
IDD3
IDD3N
IDD5
IDD:
IDD%
IDD
IDD
IDD8
220
88
100
IDD3P$
IDD3P$
IDD3P$
180
230
110
IDD3P$
IDD3P$
IDD3P$
200
120
IDD3P$
IDD3P$
IDD3P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
IND
(;7
0,/7(03
127(6T$ = 0°C to d°&657DQG$65DUHGLVDEOHGHQDEOLQJ$65FRXOGLQFUHDVH,DD[E\XSWRDQDGGLWLRQDOP$
TABLE 16B: IDD MAXIMUM LIMITS (512M)
Speed Bin
IDD
DDR3-1333
DDR3-1600
DDR3-1866
UNITS
IDD0
IDD1
IDD3
IDD3
IDD2Q
IDD2N
IDD3
IDD3N
IDD5
IDD:
IDD%
IDD
IDD
IDD8
320
80
128
200
232
292
800
88
IDD3P$
IDD3P$
IDD3P$
80
188
220
308
1020
900
880
88
IDD3P$
IDD3P$
IDD3P$
80
208
328
1200
1200
920
88
1280
IDD3P$
IDD3P$
IDD3P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
P$
IND
(;7
0,/7(03
127(6T$ = 0°C to d°&657DQG$65DUHGLVDEOHGHQDEOLQJ$65FRXOGLQFUHDVH,DD[E\XSWRDQDGGLWLRQDOP$
LOGIC Devices Incorporated
www.logicdevices.com
28
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 17: DC ELECTRICAL CHARACTERISTICS AND OPERATINGPC
ONDITIONS
ACKAGE
OUTLINE DIMENSIONS
$OO9ROWDJHVDUHUHIHUHQFHGWR9VV
Parameter/Condition
Supply Voltage
I/O Supply Voltage
Input Leakage Current:
Symbol
MIN
TYP
MAX
UNITS
NOTES
VDD
V
1,2
VDDQ
V
1,2
II
-
$
I95()
-
$
$Q\LQSXW9dVINdVDD, V5()SLQ9dVINd1.1V
$OORWKHUSLQVQRWXQGHUWHVW 9
VREF Supply Leakage Current:
V5()'4 = VDDRU95()&$ = VDD
$OORWKHUSLQVQRWXQGHUWHVW 9
127(6
1.
VDD and VDD4PXVWWUDFNRQHDQRWKHU9DD4PXVWEHOHVVWKDQRUHTXDO
3.
V5()VHH7DEOH
7KH PLQLPXP OLPLW UHTXLUHPHQW LV IRU WHVWLQJ SXUSRVHV 7KH OHDNDJH
to VDD, Vss = VssQ.
2.
VDD and VDD4PD\LQFOXGH$&QRLVHRIP9N+]WR0+]LQ
FXUUHQWRQWKH95()SLQVKRXOGEHPLQLPDO
DGGLWLRQWRWKH'&+]WRN+]VSHFLILFDWLRQV9DD and VDD4PXVW
EHDWWKHVDPHOHYHOIRUYDOLG$&WLPLQJSDUDPHWHUV
TABLE 18: DC ELECTRICAL CHARACTERISTICS AND INPUT CONDITIONS
PACKAGE OUTLINE DIMENSIONS
$OO9ROWDJHVDUHUHIHUHQFHGWR9VV
Parameter/Condition
VIN low; DC/commands/address busses
VIN high; DC/commands/address busses
Symbol
MIN
TYP
VIL
Vss
QD
V,+
6HH7DEOH
MAX
UNITS
6HH7DEOH
V
QD
VDD
V
NOTES
Input reference voltage command/address bus
V5()&$'&
[9DD
[9DD
[9DD
V
1,2
I/O reference voltage DQ bus
V5()'4'&
[9DD
[9DD
[9DD
V
2,3
I/O reference voltage DQ bus in SELF REFRESH
V5()'465
Vss
[9DD
VDD
V
VTT
-
[9DDQ
-
V
Command/address termination voltage V\VWHPOHYHOQRW
GLUHFW'5$0LQSXW
127(6
1.
V5()&$'&LVH[SHFWHGWREHDSSUR[LPDWHO\[9DDDQGWRWUDFNYDUL-
PRQ PRGH RQ 95()'4 PD\ QRW H[FHHG [ 9DD DURXQG WKH
DWLRQVLQWKH'&OHYHO([WHUQDOO\JHQHUDWHGSHDNQRLVHQRQFRPPRQ
95()'4'&YDOXH3HDNWRSHDN$&QRLVHRQ95()'4VKRXOGQRW
PRGHRQ95()&$PD\QRWH[FHHG[9DDDURXQGWKH95()&$'&
H[FHHGRI95()'4'&
YDOXH3HDNWRSHDN$&QRLVHRQ95()&$VKRXOGQRWH[FHHGRI
V5()&$'&
V5()'4'& PD\ WUDQVLWLRQ WR 95()'465 DQG EDFN WR 95()'4'&
ZKHQ LQ 6(/) ]5()5(6+ ZLWKLQ UHVWULFWLRQV RXWOLQHG LQ WKH 6(/)
2.
'&YDOXHVDUHGHWHUPLQHGWREHOHVVWKDQ0+]LQIUHTXHQF\'5$0
5()5(6+VHFWLRQ
PXVW PHHW VSHFLILFDWLRQV LI WKH '5$0 LQGXFHV DGGLWLRQDO $& QRLVH
JUHDWHUWKDQ0+]LQIUHTXHQF\
VTT LV QRW DSSOLHG GLUHFWO\ WR WKH GHYLFH 9TT LV D V\VWHP VXSSO\ IRU
VLJQDOWHUPLQDWLRQUHVLVWRUV0,1DQG0$;YDOXHVDUHV\VWHPGHSHQ-
3.
V5()'4'& LV H[SHFWHG WR EH DSSUR[LPDWHO\ [ 9DD DQG WR WUDFN
dent.
YDULDWLRQVLQWKH'&OHYHO([WHUQDOO\JHQHUDWHGSHDNQRLVHQRQFRP-
LOGIC Devices Incorporated
www.logicdevices.com
29
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 19: INPUT SWITCHING CONDITIONS
PACKAGE OUTLINE DIMENSIONS
Symbol
DDR3-1333
DDR3-1600
V,+$&0,1
Input high AC voltage: Logic 1
V,+$&0,1
Input high DC voltage: Logic 1
V,+'&0,1
Input high DC voltage: Logic 0
Input high AC voltage: Logic 0
Input high AC voltage: Logic 0
Parameter/Condition
DDR3-1866
UNITS
&RPPDQGDQG$GGUHVV
Input high AC voltage: Logic 1
-
P9
-
P9
P9
V,/'&0$;
-100
-100
P9
V,/$&0$;
-
P9
V,/$&0$;
-
P9
DQ and DM
Input high AC voltage: Logic 1
V,+$&0,1
-
-
P9
Input high AC voltage: Logic 1
V,+$&0,1
-
P9
Input high DC voltage: Logic 1
V,+'&0,1
P9
Input high DC voltage: Logic 0
V,/'&0$;
-100
-100
P9
Input high AC voltage: Logic 0
V,/$&0$;
-
P9
Input high AC voltage: Logic 0
V,/$&0$;
-
-
P9
127(6
1.
$OOYROWDJHVDUHUHIHUHQFHGWR95(), V5() is V5()&$IRUFRQWUROFRP-
3.
PDQGDQGDGGUHVV$OOVOHZUDWHVDQGVHWXSKROGWLPHVDUHVSHFLILHGDW
,QSXWKROGWLPLQJSDUDPHWHUVt,+DQG t'+DUHUHIHUHQFHGDW9IL'&
V,+'&QRW95()$&
WKH'5$0EDOO95() is V5()'4IRU'4DQG'0LQSXWV
2.
,QSXWVHWXSWLPLQJSDUDPHWHUVtIS and t'6DUHUHIHUHQFHGDW9IL$&
6LQJOHHQGHG LQSXW VOHZ UDWH 9QV PD[LPXP LQSXW YROWDJH VZLQJ
XQGHUWHVWLVP9SHDNWRSHDN
V,+$&QRW95()'&
LOGIC Devices Incorporated
www.logicdevices.com
30
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OPERATING CONDITIONS
FIGURE 6 - INPUT SIGNAL
VIL and VIH levels with ringback
1.90V
VDDQ + 0.4V narrow pulse width
1.50V
VDDQ
Minimum VIL and VIH levels
VIH (AC)
0.925V
0.925V
VIH (AC)
VIH (DC)
VIH (DC)
0.850V
0.850V
0.780V
0.765V
0.750V
0.735V
0.720V
0.780V
0.765V
0.750V
0.735V
0.720V
VREF + AC noise
VREF + DC error
VREF + DC error
VREF + AC noise
0.650V
VIL (DQ)
0.575V
VIL (AC)
0.650V
VIL (DC)
0.575V
VIL (AC)
VSS
0.0V
VSS 0.4V narrow pulse width
-0.40V
Notes:
LOGIC Devices Incorporated
www.logicdevices.com
1. Numbers in diagrams reflect nominal values.
31
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
AC OVERSHOOT/UNDERSHOOT SPECIFICATION
TABLE 20: CONTROL AND ADDRESS PINS
PACKAGE OUTLINE DIMENSIONS
Parameter
DDR3-1333
DDR3-1600
DDR3-1866
9
9
9
9
9
9
Maximum overshoot area above Vcc VHH)LJXUH
9QV
0.33Vns
0.28Vns
Maximum undershoot area below Vss VHH)LJXUH
9QV
0.33Vns
0.28Vns
Maximum peak amplitude allowed for overshoot area
VHH)LJXUH
Maximum peak amplitude allowed for undershoot area
VHH)LJXUH
TABLE 21: CLOCK, DATA, STROBE, AND MASK PINS
PACKAGE OUTLINE DIMENSIONS
Parameter
DDR3-1333
Maximum peak amplitude allowed for overshoot area
DDR3-1600
DDR3-1866
9
9
9
9
9
9
9QV
0.13Vns
0.11Vns
9QV
0.13Vns
0.11Vns
VHH)LJXUH
Maximum peak amplitude allowed for undershoot area
VHH)LJXUH
Maximum overshoot area above Vcc/ VccQ
VHH)LJXUH
Maximum undershoot area below Vss/ VssQ
VHH)LJXUH
FIGURE 7 & 8: OVERSHOOT/UNDERSHOOT SPECIFICATIONS
Maximum amplitude
Volts (V)
Figure 7: Overshoot
Overshoot area
VDD/VDDQ
Time (ns)
Time (ns)
Figure 8: Undershoot
VSS/VSSQ
Volts (V)
Maximum amplitude
LOGIC Devices Incorporated
www.logicdevices.com
32
Undershoot area
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 22: DIFFERENTIAL INPUT OPERATING CONDITIONS (CKXP, ACKAGE
CKX\, DQS
X, AND
DQSX\)
OUTLINE
DIMENSIONS
Parameter/Condition
Symbol
MIN
MAX
UNITS
NOTES
Differential input voltage, logic high - slew
V,+',))$&VOHZ
QD
P9
Differential input voltage, logic low - slew
VIL ',))$&VOHZ
QD
-200
P9
Differential input voltage, logic high
V,+',))$&
2x(V,+$&95()
VDD9DDQ
P9
Differential input voltage, logic low
VIL ',))$&
Vss9ssQ
2x(V5()-VIL$&
P9
V,;
V5()'&
V5()'&
P9
V,;
V5()'&
V5()'&
P9
V6+(
VDD49,+$&
VDDQ
P9
VDD9,+$&
VDD
VssQ
VDD49IL$&
P9
Vss
VDD-VIL$&
Differential input crossing voltage relative to VDD/2
for DQS, DQS\, CK, CK\
Differential input crossing voltage relative to VDD/2
for CK, CK\
Single-ended high level for strobes
Single-ended high level for CK, CK\
Single-ended low level for strobes
V6(/
Single-ended low level for CK, CK\
127(6
1.
&ORFN LV UHIHUHQFHG WR 9DD' DQG 9VV 'DWD VWUREH LV UHIHUHQFHG WR
VDDQ and VssQ.
2.
0,1OLPLWLVUHODWLYHWRVLQJOHHQGHGVLJQDOVWKHXQGHUVKRRWVSHFLILFDWLRQVDUHDSSOLFDEOH
5HIHUHQFHLV95()&$'&IRUFORFNDQGIRU95()'4'&IRUVWUREH
7KHW\SLFDOYDOXHRI9,;$&LVH[SHFWHGWREHDERXW[9DDRIWKH
WUDQVPLWWLQJGHYLFHDQG9,;$&LVH[SHFWHGWRWUDFNYDULDWLRQVLQ9DD.
3.
'LIIHUHQWLDOLQSXWVOHZUDWH 9PV
V,;$& LQGLFDWHV WKH YROWDJH DW ZKLFK GLIIHUHQWLDO LQSXW VLJQDOV PXVW
FURVV
'HILQHVVOHZUDWHUHIHUHQFHSRLQWVUHODWLYHWRLQSXWFURVVLQJYROWDJHV
0$; OLPLW LV UHODWLYH WR VLQJOHHQGHG VLJQDOV WKH RYHUVKRRW VSHFLILFD-
V,;H[WHQGHGUDQJHLVRQO\DOORZHGZKHQWKHIROORZLQJFRQGLWLRQVDUH
WLRQVDUHDSSOLFDEOH
PHW7KHVLQJOHHQGHGLQSXWVLJQDOVDUHPRQRWRQLFKDYHWKHVLQJOH
8.
7KH9,;H[WHQGHGUDQJHP9LVDOORZHGRQO\IRUWKHFORFNDQGWKLV
ended swing V6(/, V6(+ of at least VDDP9DQGWKHGLIIHUHQWLDO
VOHZUDWHRI&.&.?LVJUHDWHUWKDQ9QV
LOGIC Devices Incorporated
www.logicdevices.com
33
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OVERSHOOT/UNDERSHOOT SPECIFICATIONS
FIGURE 9 - VIX FOR DIFFERENTIAL SIGNALS
VDD, VDDQ
VDD, VDDQ
CK#, DQS#
CK#, DQS#
VIX
X
VIX
VDD/2, VDDQ/2
X
VDD/2, VDDQ/2
X
VIX
VIX
X
CK, DQS
CK, DQS
VSS, VSSQ
VSS, VSSQ
FIGURE 10 - SINGLE-ENDED REQUIREMENTS FOR DIFFERENTIAL SIGNALS
V DD or VDD Q
VSEH (MIN)
V DD /2 or VDD Q/2
VSEH
CK or DQS
VSEL (MAX)
VSEL
VSS or VSS Q
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OVERSHOOT/UNDERSHOOT SPECIFICATIONS
FIGURE 11 - DEFINITION OF DIFFERENTIAL AC-SWING AND tDVAC
t DVAC
V IHDIFF ( A C) MIN
V IHDIFF (MIN)
V IHDIFF ( DC) MIN
CK - CK#
DQ S - DQS #
0.0
V ILDIFF ( DC) MAX
V ILDIFF (MAX)
V ILDIFF ( A C) MAX
t DVAC
half cycle
TABLE 23: DIFFERENTIAL INPUT OPERATING CONDITIONS (tDVAC)
FOR CK
X, CKD
X\,
DQSX, AND DQSX\
PACKAGE
OUTLINE
IMENSIONS
Below VIL$&
tDVAC (ps) at [VIHDIFF(AC) to VILDiff(AC)]
LOGIC Devices Incorporated
Slew Rate (V/ns)
350mV
300mV
-4.0
4.0
3.0
2.0
38
1.9
1.6
29
1.4
22
1.2
13
1.0
0
<1.0
0
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
SLEW RATE DEFINITIONS FOR SINGLE-ENDED INPUT SIGNALS
+ROGt,+DQGt'+QRPLQDOVOHZUDWHIRUDULVLQJVLJQDOLVGHILQHGDVWKHVOHZ
UDWHEHWZHHQWKHODVWFURVVLQJRI9IL'&0$;DQGWKHILUVWFURVVLQJRI95().
+ROGt,+DQGt'+QRPLQDOVOHZUDWHIRUDIDOOLQJVLJQDOLVGHILQHGDVWKHVOHZ
UDWHEHWZHHQWKHODVWFURVVLQJRI9,+'&0,1DQGWKHILUVWFURVVLQJRI95().
6HWXS tIS and t'6 QRPLQDO VOHZ UDWH IRU D ULVLQJ VLJQDO LV GHILQHG DV WKH
VOHZUDWHEHWZHHQWKHODVWFURVVLQJRI95()DQGWKHILUVWFURVVLQJ9,+$&
0,1 6HWXS tIS and t'6 QRPLQDO VOHZ UDWH IRU D IDOOLQJ VLJQDO LV GHILQHG
DVWKHVOHZUDWHEHWZHHQWKHODVWFURVVLQJRI95()DQWKHILUVWFURVVLQJRI
VIL$&0$;
TABLE 24: SINGLE-ENDED INPUT SLEW RATE
Measured
Input Slew Rate (Linear Signals)
Input
PACKAGE OUTLINE DIMENSIONS
Edge
From
To
Rising
V5()
V,+$&0,1
Falling
V5()
VIL$&0$;
Rising
VIL'&0D[
V5()
Setup
Calculation
V,+$&0,195()
V5()VIL$&0$;
'TFS
V5()VIL'&0$;
'7)+
Hold
Falling
V,+'&0,1
V5()
V,+'&0,195()
'756+
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
SLEW RATE DEFINITIONS FOR SINGLE-ENDED INPUT SIGNALS
FIGURE 12 - NOMINAL SLEW RATE DEFINITION FOR SINGLE-ENDED INPUT SIGNALS
ΔTRS
Setup
Single-ended input voltage (DQ, CMD, ADDR)
VIH(AC) MIN
VIH(DC) MIN
VREFDQ or
VREFCA
VIL(DC) MAX
VIL(AC) MAX
ΔTFS
ΔTRH
Hold
Single-ended input voltage (DQ, CMD, ADDR)
VIH(AC) MIN
VIH(DC) MIN
VREFDQ or
VREFCA
VIL(DC) MAX
VIL(AC) MAX
ΔTFH
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
SLEW RATE DEFINITIONS FOR DIFFERENTIAL INPUT SIGNALS
,QSXWVOHZUDWHIRUGLIIHUHQWLDOVLJQDOV&.[&.[?8'46[8'46[?/'46[DQG/'46[?DUHGHILQHGDQGPHDVXUHGDVVKRZQLQ7DEOH7KHQRPLQDOVOHZ
UDWHIRUDULVLQJVLJQDOLVGHILQHGDVWKHVOHZUDWHEHWZHHQ9IL',))0$;DQG9,+',))0,17KHQRPLQDOVOHZUDWHIRUDIDOOLQJVLJQDOLVGHILQHGDVWKHVOHZ
rate between V,+',))0,1DQG9IL',))0$;
TABLE 25: DIFFERENTIAL INPUT SLEW RATE DEFINITION
Measured
Input Slew Rate (Linear Signals)
Input
Edge
PACKAGE OUTLINE DIMENSIONS
From
Rising
V5()
To
Calculation
V,+',))0,1- VIL',))0$;
V,+$&0,1
'75',))
CK and DQS
Reference
V,+',))0,1 VIL',))0$;
Falling
V5()
VIL($&0$;
'7)',))
FIGURE 13 - NOMINAL DIFFERENTIAL INPUT SLEW RATE DEFINITION FOR DQS, DQS# AND CK, CK#
Differential input voltage (DQS, DQS#; CK, CK#)
ΔTR DIFF
VIH(DIFF) MIN
0
VIL(DIFF) MAX
ΔTFDIFF
LOGIC Devices Incorporated
www.logicdevices.com
38
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
L9D3256M32SBG1
L9D3512M32SBG1
PRELIMINARY INFORMATION
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ODT CHARACTERISTICS
FIGURE 14 - ODT LEVELS AND I-V CHARACTERISTICS
Chip in termination mode
2'7uV HIIHFWLYH UHVLVWDQFH 5TT LV GHILQHG E\ 05> DQG @ 2'7 LV
DSSOLHGWRWKH'4[8'0[/'0[8'46[8'46[?/'46[DQG/'46[?
EDOOV7KH2'7WDUJHWYDOXHVDUHOLVWHGLQ7DEOH
ODT
VDD Q
IPU
IOUT = IPD - IPU
To
other
circuitry
such as
RCV, . . .
RTTPU
DQ
IOUT
R TTPD
VOUT
IPD
VSSQ
TABLE 26: ON-DIE TERMINATION DC ELECTRICAL CHARACTERISTICS
Parameter/Condition
Symbol
RTTHIIHFWLYHLPSHGDQFH
RTTB())
'HYLDWLRQRI90ZLWKUHVSHFWWR9DD4
'VM
MIN
TYP
MAX
UNITS
NOTES
6HH7DEOH
127(6
1.
7ROHUDQFH OLPLWV DUH DSSOLFDEOH DIWHU D SURSHU =4 FDOLEUDWLRQ KDV EHHQ
3.
0HDVXUHYROWDJH90DWWKHWHVWHGSLQZLWKQRORDG
SHUIRUPHGDWDVWDEOHWHPSHUDWXUHDQGYROWDJH9DDQ=VDD9VV49VV
5HIHUWRv2'76HQVLWLYLW\wRQSDJHLIHLWKHUWKHWHPSHUDWXUHRUYROWDJH
'VM =
FKDQJHVDIWHUFDOLEUDWLRQ
2.
2 x VM
-1 x 100
VDDQ
0HDVXUHPHQWGHILQLWLRQIRU5TT$SSO\9,+$&WRDSLQXQGHUWHVWDQG
PHDVXUHWKHFXUUHQW,>9,+$&@WKHQDSSO\9IL$&WRSLQXQGHUWHVWDQG
)RU H[WHQGHG 0,/WHPS GHYLFHV WKH PLQLPXP YDOXHV DUH GHUDWHG E\
ZKHQWKHGHYLFHLVEHWZHHQ&DQG&T$
PHDVXUHFXUUHQW,>9IL$&@
VIL$&9IL$&
RTT =
LOGIC Devices Incorporated
,>9,+$&,9IL$&@
www.logicdevices.com
39
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 27: RTT EFFECTIVE IMPEDANCES
MR1
[9,6,2]
RTT
PACKAGE OUTLINE DIMENSIONS
Resistor
RTT1203'
0, 1, 0
120:
RTT12038
120:
RTT3'120
0, 0, 1
:
RTT38
:
RTT3'80
0, 1, 1
:
RTT3880
:
RTT303'
1, 0, 1
30:
RTT3038
30:
RTT203'
1, 0, 0
20:
RTT2038
20:
LOGIC Devices Incorporated
www.logicdevices.com
VOUT
MIN
TYP
MAX
UNITS
0.2 x VDDQ
1.0
1.1
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
5=4
0.2 x VDDQ
0.9
1.0
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
1.1
5=4
VIL$&WR9,+$&
0.9
1.0
5=4
0.2 x VDDQ
1.0
1.1
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
5=4
0.2 x VDDQ
0.9
1.0
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
1.1
5=4
VIL$&WR9,+$&
0.9
1.0
5=4
0.2 x VDDQ
1.0
1.1
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
5=4
0.2 x VDDQ
0.9
1.0
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
1.1
5=4
VIL$&WR9,+$&
0.9
1.0
5=4
0.2 x VDDQ
1.0
1.1
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
5=4
0.2 x VDDQ
0.9
1.0
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
1.1
5=4
VIL$&WR9,+$&
0.9
1.0
5=4
0.2 x VDDQ
1.0
1.1
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
5=4
0.2 x VDDQ
0.9
1.0
5=4
[9DDQ
0.9
1.0
1.1
5=4
0.8 x VDDQ
0.9
1.0
1.1
5=4
VIL$&WR9,+$&
0.9
1.0
5=4
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ODT SENSITIVITY
,IHLWKHUWKHWHPSHUDWXUHRUYROWDJHFKDQJHVDIWHU,2FDOLEUDWLRQWKHWROHUDQFHOLPLWVOLVWHGLQ7DEOHFDQEHH[SHFWHGWRZLGHQDFFRUGLQJWR7DEOHVDQG
TABLE 28: ODT SENSITIVITY DEFINITION
Symbol
RTT
MIN
0.9 - dRTTdT x dRTTdV x [DV]
MAX
UNITS
5=4
G5TTG7[>'7@G5TTdV x [DV]
TABLE 29 - ODT TEMPERATURE & VOLTAGE SENSITIVITY
Change
MIN
MAX
UNITS
dRTTdT
0
0
dRTTdV
0
0
FIGURE 15 - ODT TIMING REFERENCE LOAD
ODT TIMING DEFINITIONS
2'7ORDGLQJGLIIHUVIURPWKDWXVHGLQ$&WLPLQJPHDVXUHPHQWV7ZRSDUDPHWHUVGHILQHZKHQ2'7WXUQVRQRURIIV\QFKURQRXVO\WZRGHILQHZKHQ2'7
WXUQVRQRURII$V\QFKURQRXVO\DQGDQRWKHUGHILQHVZKHQ2'7WXUQVRQRU
RIIG\QDPLFDOO\7DEOHRXWOLQHVDQGSURYLGHVGHILQLWLRQDQGPHDVXUHPHQW
UHIHUHQFHVHWWLQJVIRUHDFKSDUDPHWHU
DUT
CK, CK#
2'7 WXUQRQ WLPH EHJLQV ZKHQ WKH RXWSXW OHDYHV +,*+= DQG 2'7 UHVLVWDQFHEHJLQVWRWXUQRQ2'7WXUQRIIWLPHEHJLQVZKHQWKHRXWSXWOHDYHV
/2:=DQG2'7UHVLVWDQFHEHJLQVWRWXUQRII
VREF
DQ, DM
DQS, DQS#
ZQ
VDDQ/2
RTT = 25Ω
VTT = VSSQ
Timing reference point
RZQ = 240Ω
VSSQ
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ODT TIMING DEFINITIONS
TABLE 30: ODT TIMING DEFINITIONS
Symbol
PACKAGE OUTLINE DIMENSIONS
End Point Definition
Figure
5LVLQJHGJHRI&.&.?GHILQHGE\WKHHQGSRLQWRI2'7/RQ
Begin Point Definition
([WUDSRODWHGSRLQWDW9VV4
)LJXUHRQSDJH
tAOF
5LVLQJHGJHRI&.&.?GHILQHGE\WKHHQGSRLQWRI2'7/RII
([WUDSRODWHGSRLQWDW95TT_NORM
)LJXUHRQSDJH
tAONPD
5LVLQJHGJHRI&.&.?ZLWK2'7ILUVWEHLQJUHJLVWHUHG+,*+
([WUDSRODWHGSRLQWDW9VV4
)LJXUHRQSDJH
5LVLQJHGJHRI&.&.?ZLWK2'7ILUVWEHLQJUHJLVWHUHG/2:
([WUDSRODWHGSRLQWDW95TT_NOM
)LJXUHRQSDJH
5LVLQJHGJHRI&.&.?GHILQHGE\WKHHQGSRLQWRI2'7/&1:
([WUDSRODWHGSRLQWVDW95TTB:5DQG95TT_NOM
)LJXUHRQSDJH
tAON
tAOFPD
tADC
2'7/&:1RU2'7/&:1
TABLE 31: REFERENCE SETTINGS FOR ODT TIMING MEASUREMENTS
PACKAGE OUTLINE DIMENSIONS
Measured
Parameter
RTT_NORM Setting
tAON
tAOF
tAONPD
tAOFPD
tADC
VSW1
VSW2
5=4:
RTT_WR_Setting
QD
P9
P9
5=4:
QD
P9
P9
5=4:
QD
P9
P9
5=4:
QD
P9
P9
5=4:
QD
P9
P9
5=4:
QD
P9
P9
5=4:
QD
P9
P9
5=4:
QD
P9
P9
5=4:
5=4:
P9
P9
FIGURE 16 - tAON AND tAOF DEFINITIONS
t AON
t AOF
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL off
Begin point: Rising edge of CK - CK#
defined by the end point of ODTL on
CK
CK
VDDQ/2
CK#
CK#
t AON
t AOF
End point: Extrapolated point at VRTT_NOM
TSW 2
VRTT_NOM
TSW 1
TSW 1
TSW 1
VSW 2
DQ, DM
DQS, DQS#
VSS Q
VSW 2
VSW 1
VSW 1
VSS Q
End point: Extrapolated point at VSS Q
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ODT CHARACTERISTICS
FIGURE 17 - tAONPD AND tAOFPD DEFINITION
t AONPD
t AOFPD
Begin point: Rising edge of CK - CK#
with ODT first registered HIGH
Begin point: Rising edge of CK - CK#
with ODT first registered LOW
CK
CK
VDD Q/2
CK#
CK#
t AONPD
t AOFPD
End point: Extrapolated point at VRTT_NOM
VRTT_NOM
TSW 2
TSW 2
TSW 1
TSW 1
VSW 2
VSW 2
DQ, DM
DQS, DQS#
VSW 1
VSW1
VSS Q
VSS Q
End point: Extrapolated point at VSS Q
FIGURE 18 - tADC DEFINITION
Begin point: Rising edge of CK - CK#
defined by the end point of ODTLCNW
Begin point: Rising edge of CK - CK#
defined by the end point of ODTLCNW4 or ODTLCNW8
CK
VDDQ/2
CK#
t ADC
VRTT_NOM
DQ, DM
DQS, DQS#
End point:
Extrapolated
point at VRTT_NOM
t ADC
VRTT_NOM
TSW 21
TSW 11
VSW 2
TSW 22
TSW 12
VSW 1
VRTT_WR
End point: Extrapolated point at VRTT_WR
VSS Q
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OUTPUT DRIVER IMPEDANCE
FIGURE 19 - OUTPUT DRIVER
34 OHM OUTPUT DRIVER IMPEDANCE
7KH:GULYHU05>@ LVWKHGHIDXOWGULYHU8QOHVVRWKHUZLVHVWDWHG
DOOWLPLQJVDQGVSHFLILFDWLRQVOLVWHGKHUHLQDSSO\WRWKH:GULYHURQO\,WV
LPSHGDQFH 5ON LV GHILQHG E\ WKH YDOXH RI WKH H[WHUQDO UHIHUHQFH UHVLVWRU
5=4DVIROORZV5ON 5=4ZLWKQRPLQDO5=4 :DQGLVDFWXDOO\:7KH:RXWSXWGULYHULPSHGDQFHFKDUDFWHULVWLFVDUHOLVWHG
in Table 32.
Chip in drive mode
Output driver
VDDQ
IPU
To
other
circuitry
such as
RCV, . . .
RONPU
DQ
IOUT
RONPD
IPD
VOUT
VSSQ
TABLE 32: 34: DRIVER IMPEDANCE CHARACTERISTICS
MR1[5,1]
0, 1
RON
PACKAGE OUTLINE DIMENSIONS
RESISTOR
VOUT
MIN
TYP
MAX
UNITS
9DDQ
1.0
1.1
5=4
1
RON34PD
9DDQ
0.9
1.0
1.1
5=4
1
9DDQ
0.9
1.0
5=4
1
9DDQ
0.9
1.0
5=4
1
9DDQ
0.9
1.0
1.1
5=4
1
9DDQ
1.0
1.1
5=4
1
9DDQ
-10
QD
10
1, 2
34.3:
RON34PU
Pull-Up/Pull-Down mismatch (MMPUPD)
NOTES
127(6
1.
7ROHUDQFHOLPLWVDUHDSSOLFDEOHDIWHUSURSHU=4FDOLEUDWLRQKDVEHHQSHUIRUPHGDWDVWDEOHWHPSHUDWXUHDQGYROWDJH9DDQ = VDD9VV4 9VV5HIHUWR
v2KPGULYHVHQVLWLYLW\wLIHLWKHUWKHWHPSHUDWXUHRUWKHYROWDJHFKDQJHVDIWHUFDOLEUDWLRQ 2.
0HDVXUHPHQWGHILQLWLRQIRUPLVPDWFKEHWZHHQSXOOXSDQGSXOOGRZQ00383'0HDUXUHERWK52138 and R213'DW[9DDQ:
MM38' =
R2138 - R213'
RONNOM
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
34 OHM OUTPUT DRIVER IMPEDANCE
34 OHM DRIVER
7KH:GULYHUuVFXUUHQWUDQJHKDVEHHQFDOFXODWHGDQGVXPPDUL]HGLQ7DEOHIRU9DD 97DEOHIRU9DD 9DQG7DEOHIRU9DD 9
7KHLQGLYLGXDOSXOOXSDQGSXOOGRZQUHVLVWRUV5213'DQG52138DUHGHILQHGDVIROORZVZLWKWKH,PSHGDQFH&DOFXODWLRQVOLVWHGLQ7DEOH
xRON3' 9287>,287@52138LVWXUQHGRII
xRON38 9DDQ-V287>,287@5213'LVWXUQHGRII
TABLE 33: 34: DRIVER PULL-UP AND PULL-DOWN IMPEDANCE
CALCULATIONS
PACKAGE
OUTLINE DIMENSIONS
MR1[5,1]
RON
RON
MIN
RZQ = 240:±1%
RZQ = (240:±1%)/7
RESISTOR
RON34PD
0, 1
34.3:
RON34PU
TYP
MAX
UNITS
:
33.9
:
VOUT
MIN
TYP
MAX
9DDQ
38.1
UNITS
:
9DDQ
38.1
:
9DDQ
:
9DDQ
:
9DDQ
38.1
:
9DDQ
38.1
:
TABLE 34: 34: DRIVER IOH/IOL CHARACTERISTICS: VDD = VPDD
Q = 1.35V
ACKAGE
OUTLINE DIMENSIONS
MR1[5,1]
RON
RESISTOR
RON34PD
0, 1
34.3:
RON34PU
VOUT
MIN
TYP
MAX
UNITS
IOL @ 0.2 x VDDQ
8.8
P$
IOL#[9DDQ
21.9
P$
IOL @ 0.8 x VDDQ
39.3
P$
IOL @ 0.2 x VDDQ
39.3
P$
IOL#[9DDQ
21.9
P$
IOL @ 0.8 x VDDQ
8.8
P$
TABLE 35: 34: DRIVER IOH/IOL CHARACTERISTICS: VDD=VDD
Q=1.4175V
PACKAGE
OUTLINE DIMENSIONS
MR1[5,1]
RON
RESISTOR
RON34PD
0, 1
34.3:
RON34PU
LOGIC Devices Incorporated
www.logicdevices.com
VOUT
MIN
TYP
IOL @ 0.2 x VDDQ
9.2
8.3
P$
IOL#[9DDQ
23
P$
IOL @ 0.8 x VDDQ
P$
IOL @ 0.2 x VDDQ
P$
IOL#[9DDQ
23
P$
IOL @ 0.8 x VDDQ
9.2
8.3
P$
MAX
UNITS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
34 OHM OUTPUT DRIVER IMPEDANCE
TABLE 36: 34: DRIVER IOH/IOL CHARACTERISTICS: VDD=VDD
Q=1.2825V
PACKAGE
OUTLINE DIMENSIONS
MR1[5,1]
RON
RESISTOR
RON34PD
0, 1
34.3:
RON34PU
VOUT
MIN
TYP
MAX
UNITS
IOL @ 0.2 x VDDQ
8.3
P$
IOL#[9DDQ
23.3
20.8
P$
IOL @ 0.8 x VDDQ
33.3
P$
IOL @ 0.2 x VDDQ
33.3
P$
IOL#[9DDQ
23.3
20.8
P$
IOL @ 0.8 x VDDQ
8.3
P$
34: OUTPUT DRIVER SENSITIVITY
,IHLWKHUWKHWHPSHUDWXUHRUYROWDJHFKDQJHVDIWHU=4FDOLEUDWLRQWKHWROHUDQFHOLPLWVOLVWHGLQ7DEOHFDQEHH[SHFWHGWRZLGHQDFFRUGLQJWR7DEOHDQG
TABLE 37: 34: OUTPUT DRIVER SENSITIVITY DEFINITION
Symbol
MIN
MAX
UNITS
RON @ 0.8 x VDDQ
0.9 - dRONG7+[>'7@G5ONG9+[>'V]
1.1 - dRONG7+[>'7@G5ONG9+[>'V]
5=4
RON @ 0.5 x VDDQ
0.9 - dRONdTM x ['7@G5ONdVM x ['V]
1.1 - dRONdTM x ['7@G5ONdVM x ['V]
5=4
RON @ 0.2 x VDDQ
0.9 - dRONdTL x ['7@G5ONdVL x ['V]
1.1 - dRONdTL x ['7@G5ONdVL x ['V]
5=4
TABLE 38: 34: OUTPUT DRIVER VOLTAGE AND TEMPERATURE SENSITIVITY
Change
MIN
MAX
UNITS
dRONdTM
0
&
dRONdVM
0
0.13
P9
dRONdTL
0
&
dRONdVL
0
0.13
P9
dRONdTH
0
&
dRONdVH
0
0.13
P9
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ALTERNATIVE 40 OHM DRIVER
TABLE 39 - 40: DRIVER IMPEDANCE CHARACTERISTICS
MR1[5,1]
0, 1
RON
PACKAGE OUTLINE DIMENSIONS
RESISTOR
VOUT
MIN
TYP
MAX
UNITS
NOTES
9DDQ
1.0
1.1
5=4
1
RON40PD
9DDQ
0.9
1.0
1.1
5=4
1
9DDQ
0.9
1.0
5=4
1
9DDQ
0.9
1.0
5=4
1
9DDQ
0.9
1.0
1.1
5=4
1
9DDQ
1.0
1.1
5=4
1
9DDQ
-10
QD
10
1, 2
40.0:
RON40PU
Pull-Up/Pull-Down mismatch (MMPUPD)
127(6
1.
7ROHUDQFHOLPLWVDVVXPH5=4RI:DQGDUHDSSOLFDEOHDIWHUSURSHU=4FDOLEUDWLRQKDVEHHQSHUIRUPHGDWDVWDEOHWHPSHUDWXUHDQGYROWDJH
(VDDQ = VDD9VV4 9VV5HIHUWRv2KPGULYHVHQVLWLYLW\wLIHLWKHUWKHWHPSHUDWXUHRUWKHYROWDJHFKDQJHVDIWHUFDOLEUDWLRQ
2.
0HDVXUHPHQWGHILQLWLRQIRUPLVPDWFKEHWZHHQSXOOXSDQGSXOOGRZQ00383'0HDUXUHERWK5ON38DQG5ON3'DW[9DDQ:
MM383' = R2138 - R213'
x 100
RONNOM
40: OUTPUT DRIVER SENSITIVITY
,IHLWKHUWKHWHPSHUDWXUHRUYROWDJHFKDQJHVDIWHU,2FDOLEUDWLRQWKHWROHUDQFHOLPLWVOLVWHGLQ7DEOHFDQEHH[SHFWHGWRZLGHQDFFRUGLQJWR7DEOHDQG
TABLE 40: 40: OUTPUT DRIVER SENSITIVITY DEFINITION
Symbol
MIN
MAX
UNITS
RON @ 0.8 x VDDQ
0.9 - dRONG7+[>'7@G5ONG9+[>'V]
1.1 - dRONG7+[>'7@G5ONG9+[>'V]
5=4
RON @ 0.5 x VDDQ
0.9 - dRONdTM x ['7@G5ONdVM x ['V]
1.1 - dRONdTM x ['7@G5ONdVM x ['V]
5=4
RON @ 0.2 x VDDQ
0.9 - dRONdTL x ['7@G5ONdVL x ['V]
1.1 - dRONdTL x ['7@G5ONdVL x ['V]
5=4
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ALTERNATIVE 40 OHM DRIVER
TABLE 41: 40: OUTPUT DRIVER VOLTAGE AND TEMPERATURE SENSITIVITY
Change
MIN
MAX
dRONdTM
0
UNITS
&
dRONdVM
0
P9
dRONdTL
0
&
dRONdVL
0
P9
dRONdTH
0
&
dRONdVH
0
P9
OUTPUT CHARACTERISTICS AND OPERATING CONDITIONS
7KH6'5$0XVHVERWKVLQJOHHQGHGDQGGLIIHUHQWLDORXWSXWGULYHUV7KHVLQJOHHQGHGRXWSXWGULYHULVVXPPDUL]HGLQ7DEOHZKLOHWKHGLIIHUHQWLDORXWSXW
GULYHULVVXPPDUL]HGLQ7DEOH
TABLE 42: SINGLE-ENDED OUTPUT DRIVER CHARACTERISTICS PACKAGE OUTLINE DIMENSIONS
Parameter/Condition
Output leakage current:'4DUHGLVDEOHG
Symbol
MIN
UNITS
NOTES
I2=
MAX
X$
1
6546(
9QV
0V d V287d VDD42'7LVGLVDEOHG2'7LV+,*+
Output slew rate:6LQJOHHQGHGIRUULVLQJDQGIDOOLQJ
HGJHVPHDVXUHEHWZHHQ9OL$& 95() - 0.1 x VDDQ
and V2+$& 95()[9DDQ
Single-ended DC high-level output voltage
V2+'&
0.8 x VDDQ
V
Single-ended DC mid-point level output voltage
VOM'&
[9DDQ
V
Single-ended DC low-point level output voltage
VOL'&
0.2 x VDDQ
V
Single-ended DC high-point level output voltage
V2+$&
977[9DDQ
V
Single-ended DC low-point level output voltage
VOL$&
VTT - 0.1 x VDDQ
V
Delta RON between pull-up and pull-down for DQ/DQS
MM383'
Test load for AC timing and output slew rates
-10
10
3
2XWSXWWR9TT (VDD4YLD: resistor
127(6
1.
5=4RI:ZLWK5=4HQDEOHGGHIDXOW:GULYHUDQGLVDSSOL-
FDEOH DIWHU SURSHU =4 FDOLEUDWLRQ KDV EHHQ SHUIRUPHG DW D VWDEOH WHP-
6HH7DEOHRQSDJH,9FXUYHOLQHDULW\'RQRWXVH$&7HVWORDG
6HH7DEOHRQSDJHIRURXWSXWVOHZUDWH
SHUDWXUHDQGYROWDJH9DDQ = VDD9VV4 9VV
6HH7DEOHRQSDJHIRUDGGLWLRQDOLQIRUPDWLRQ
2.
VTT = VDD4
8.
6HH )LJXUH RQ SDJH IRU DQ H[DPSOH RI D VLQJOHHQGHG RXWSXW
3.
6HH)LJXUHRQSDJHIRUWKHWHVWORDGFRQILJXUDWLRQ
7KH9QVPD[LPXPLVDSSOLFDEOHIRUDVLQJOH'4VLJQDOZKHQLWLVVZLWFK-
signal.
LQJIURPHLWKHU+,*+WR/2:RU/2:WR+,*+ZKLOHWKHUHPDLQLQJ'4
VLJQDOVLQWKHVDPHE\WHODQHDUHFRPELQDWLRQVWKHPD[LPXPOLPLWRI9
QVPD[LPXPLVUHGXFHGWR9QV
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 43: DIFFERENTIAL OUTPUT DRIVER CHARACTERISTICS PACKAGE OUTLINE DIMENSIONS
Parameter/Condition
Output leakage current:'4DUHGLVDEOHG
Symbol
MIN
MAX
UNITS
NOTES
I2=
X$
1
SRQDIFF
12
9QV
1
V2;$&
V5()
V5()
P9
1, 2, 3
0V d V287d VDD42'7LV+,*+
Output slew rate:'LIIHUHQWLDOIRUULVLQJDQGIDOOLQJHGJHV
PHDVXUHEHWZHHQ9OL',))$& [9DDQ and V2+
$& [9DDQ
Output differential cross-point voltage
Differential high-level output voltage
V2+',))$&
[9DDQ
V
Differential low-level output voltage
VOL',))$&
- 0.2 x VDDQ
V
Delta RON between pull-up and pull-down for DQ/DQS
MM383'
-10
10
2XWSXWWR9TT (VDD4YLD: resistor
Test load for AC timing and output slew rates
3
127(6
1.
5=4RI:ZLWK5=4HQDEOHGGHIDXOW:GULYHUDQGLVDSSOL-
6HH7DEOHRQSDJHIRUWKHRXWSXWVOHZUDWH
FDEOH DIWHU SURSHU =4 FDOLEUDWLRQ KDV EHHQ SHUIRUPHG DW D VWDEOH WHP-
6HH7DEOHRQSDJHIRUDGGLWLRQDOLQIRUPDWLRQ
SHUDWXUHDQGYROWDJH9DDQ = VDD9VV4 9VV
6HH)LJXUHRQSDJHIRUDQH[DPSOHRIDGLIIHUHQWLDORXWSXWVLJQDO
2.
V5() = VDD4
3.
6HH)LJXUHRQSDJHIRUWKHWHVWORDGFRQILJXUDWLRQ
FIGURE 20 - DQ OUTPUT SIGNAL
MAX output
VOH(AC)
VOL(AC)
MIN output
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OUTPUT CHARACTERISTICS AND OPERATING CONDITIONS
FIGURE 21 - DIFFERENTIAL OUTPUT SIGNAL
MAX output
VOH(DIFF)
X
VOX(AC) MAX
X
X
VOX(AC) MIN
X
VOL(DIFF)
MIN output
REFERENCE OUTPUT LOAD
)LJXUHUHSUHVHQWVWKHHIIHFWLYHUHIHUHQFHORDGRI:XVHGLQGHILQLQJWKHUHOHYDQWGHYLFH$&WLPLQJSDUDPHWHUVH[FHSW2'7UHIHUHQFHWLPLQJDVZHOODVWKH
RXWSXWVOHZUDWHPHDVXUHPHQWV,WLVQRWLQWHQGHGWREHDSUHFLVHUHSUHVHQWDWLRQRIDSDUWLFXODUV\VWHPHQYLURQPHQWRUDGHSLFWLRQRIWKHDFWXDOORDGSUHVHQWHG
E\DQ\VSHFLILF,QGXVWU\WHVWV\VWHPDSSDUDWXV6\VWHPGHVLJQHUVVKRXOGXVH,%,6RURWKHUVLPXODWLRQWRROVWRFRUUHODWHWKHWLPLQJUHIHUHQFHORDGSUHVHQWHGRU
H[KLELWHGRQWKHV\VWHPRUV\VWHPHQYLURQPHQW
FIGURE 22 - REFERENCE OUTPUT LOAD FOR AC TIMING AND OUTPUT SLEW RATE
DUT
VREF
DQ
DQS
DQS#
VDDQ/2
RTT = 25Ω
VTT = VDDQ/2
Timing Reference Point
ZQ
RZQ = 240Ω
VSS
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
SLEW RATE DEFINITIONS FOR SINGLE-ENDED OUTPUT SIGNALS
7KHVLQJOHHQGHGRXWSXWGULYHULVVXPPDUL]HGLQ7DEOH:LWKWKHUHIHUHQFHORDGIRUWLPLQJPHDVXUHPHQWVWKHRXWSXWVOHZUDWHIRUIDOOLQJDQGULVLQJHGJHV
LVGHILQHGDQGPHDVXUHGEHWZHHQ9OL$&DQG92+$&IRUVLQJOHHQGHGVLJQDOVDVLQGLFDWHGLQ7DEOHDQG)LJXUH
TABLE 44: SINGLE-ENDED OUTPUT SLEW RATE
Measured
Output Slew Rate (Linear Signals)
Output
PACKAGE OUTLINE DIMENSIONS
Edge
From
To
Rising
VOL$&
V2+$&
Falling
V2+$&
VOL$&
Calculation
V2+$&9OL $&
'756(
DQ
V2+$&9OL$&
'7)6(
FIGURE 23 - NOMINAL SLEW RATE DEFINITION FOR SINGLE-ENDED OUTPUT SIGNALS
ΔTRSE
VOH(AC)
VTT
VOL(AC)
ΔTFSE
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
SLEW RATE DEFINITIONS FOR DIFFERENTIAL OUTPUT SIGNALS
7KHGLIIHUHQWLDORXWSXWGULYHULVVXPPDUL]HGLQ7DEOH:LWKWKHUHIHUHQFHORDGIRUWLPLQJPHDVXUHPHQWVWKHRXWSXWVOHZUDWHIRUIDOOLQJDQGULVLQJHGJHVLV
GHILQHGDQGPHDVXUHGEHWZHHQ9OL$&DQG92+$&IRUGLIIHUHQWLDOVLJQDOVDVVKRZQLQ7DEOHDQG)LJXUH
TABLE 45: DIFFERENTIAL OUTPUT SLEW RATE DEFINITION
Measured
Output Slew Rate (Linear Signals)
Output
PACKAGE OUTLINE DIMENSIONS
Edge
From
To
Rising
VOL',))$&
V2+',))$&
Falling
V2+',))$&
VOL',))$&
Calculation
V2+',))$&9OL ',))$&
'TRDIFF
DQS, DQS\
V2+',))$&9OL',))$&
'TFDIFF
FIGURE 24 - NOMINAL DIFFERENTIAL OUTPUT SLEW RATE DEFINITION FOR DQS, DQS#
VOH(DIFF) AC
0
VOL(DIFF) AC
ΔTFDIFF
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 46: SPEED BINS
PACKAGE OUTLINE DIMENSIONS
''5''5''5
>&:/ @>&:/ @>&:/ @
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN
tRCD
-
-
13.91
-
ns
35(&+$5*(FRPPDQGSHULRG
t53
-
-
13.91
-
ns
$&7,9$7(WR$&7,9$7(RU5()5(6+FRPPDQGSHULRG
tRC
-
-
-
ns
t5$6
9 x t5(),
9 x t5(),
9 x t5(),
ns
1
&:/ t&.$9*
3
3.3
3
3.3
3
3
ns
2
&:/ t&.$9*
ns
3
ns
3
ns
2
$&7,9$7(WRLQWHUQDO5($'RU:5,7(GHOD\WLPH
$&7,9$7(WR35(&+$5*(FRPPDQGSHULRG
&/ &/ CL=8
CL=10
MAX UNITS NOTES
&:/ t&.$9*
&:/ t&.$9*
&:/ t&.$9*
ns
3
&:/ t&.$9*
ns
3
&:/ t&.$9*
&:/ t&.$9*
&:/ 3.3
3.3
3.3
ns
3
ns
2,3
t&.$9*
ns
3
&:/ t&.$9*
ns
3
&:/ t&.$9*
&:/ t&.$9*
ns
3
ns
2,3
CK
6XSSRUWHG&/6HWWLQJV
6XSSRUWHG&:/6HWWLQJV
CK
127(6
1.
t5(),GHSHQGVRQt23(5
2.
7KH &/ DQG &:/ VHWWLQJ UHVXOW LQ t&. UHTXLUHPHQWV :KHQ PDNLQJ D
VHOHFWLRQRI t&.ERWK&/DQG&:/UHTXLUHPHQWVHWWLQJVQHHGWREHIXO-
3.
5HVHUYHGILOOHGEORFNVVHWWLQJVDUHQRWDOORZHG
filled.
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
t
t
CK (AVG)
CKDLL_DIS
Cumulave error across
3 Cycles
4 Cycles
5 Cycles
6 Cycles
7 Cycles
8 Cycles
9 Cycles
10 Cycles
11 Cycles
12 Cycles
2 Cycles
n = 13, 14 … 49, 50 Cycles
DLL LOCKED
DLL LOCKING
ERR3PERR
t
ERRnPER
ERR4PERR
t
ERR5PERR
t
ERR6PERR
t
ERR7PERR
t
ERR8PERR
t
ERR9PERR
t
ERR10PERR
t
ERR11PERR
t
ERR12PERR
t
t
t
JITCC
JITCC, LCK
t
ERR2PERR
t
-140
-155
-168
-177
-186
-193
-200
-205
-210
-215
-118
0.43
t
Clock absolute LOW pulse width
Cycle-to-Cycle JITTER
0.43
CH (ABS)
CL (ABS)
0.53
0.53
80
70
0.47
0.47
-70
-60
0.53
0.53
70
60
0.47
0.47
-60
-50
See SPEED BIN TABLE (#49) for tCK range allowed
0.53
0.53
60
50
-12 (DDR3-1600)
-11 (DDR3-1866)
[CWL=1.25; 11-11-11] [CWL=1.07; 13-13-13]
MIN
MAX
MIN
MAX
8
7800
8
7800
8
3900
8
3900
8
2900
-
118
-103
0.43
0.43
140
120
103
-
-
-88
0.43
0.43
120
100
140
-122
122
-105
155
-136
136
-117
168
-147
147
-126
177
-155
155
-133
186
-163
163
-139
193
-169
169
-145
200
-175
175
-150
205
-180
180
-154
210
-184
184
-158
215
-188
188
-161
tERRnPER MIN = (1+0.68ln[n]) x tJITPER MIN
tERRnPER MAX = (1+0.68ln[n]) x tJITPER MAX
160
140
-
-
105
117
126
133
139
145
150
154
158
161
88
-
-
MIN=tCK (AVG) MIN+tJITPER MIN; MAX=tCK (AVG)MAX+tJITPER MAX
0.47
0.47
-80
-70
Clock absolute HIGH pusle width
CH (AVG)
t
CL (AVG)
t
JITPER
t
JITPER, LCK
t
CLK (ABS)
t
Symbol
t
Parameter
TC = 0˚C to <85˚C
Clock period average: DLL
TC = 85˚C to 105˚C
disable mode
TC = >105˚C to ≤125˚C
Clock period average: DLL enable mode
HIGH pulse width average
LOW pulse width average
DLL LOCKED
Clock period JITTER
DLL LOCKING
Clock absolute period
-15 (DDR3-1333)
[CWL=1.5; 9-9-9]
MIN
MAX
8
7800
8
3900
8
2900
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
17
17
17
17
17
17
17
17
17
17
17
16
16
17
15
tCK (AVG)
ps
ps
ps
14
10,11
12
12
13
13
Notes
9,42
9,42
9,42
tCK (AVG)
ns
CK
CK
ps
ps
ps
ns
Units
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 47 (SHEET 1 OF 6) - ELECTRICAL CHARACTERISTICS AND AC OPERATING CONDITIONS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
DQS, DQS\ DIFFERENTIAL READ postamble
DQS, DQS\ DIFFERENTIAL Output HIGH me
DQS, DQS\ DIFFERENTIAL Output LOW me
DQS, DQS\ LOW-Z me (RL-1)
DQS, DQS\ HIGH-Z me (RL+BL/2)
DQS, DQS\ DIFFERENTIAL READ preamble
DQS, DQS\ RISING to/from RISING CK, CK\ when DLL is disabled
DQS, DQS\ RISING to/from RISING CK, CK\
DQS,DQS\ RISING to CK, CK\ RISING
DQS, DQS\ DIFFERENTIAL Input Low pulse width
DQS, DQS\ DIFFERENTIAL Input HIGH pulse width
DQS, DQS\ FALLING Setup to CK, CK\ RISING
DQS, DQS\ FALLING Hold from CK, CK\ RISING
DQS, DQS\ DIFFERENTIAL WRITE preamble
DQS, DQS\ DIFFERENTIAL WRITE postamble
t
QH
0.38
t
RPST
DQSK
DLL_DIS
t
QSH
t
QSL
t
LZ (DQS)
t
HZ (DQS)
t
RPRE
t
0.3
0.4
0.4
-500
0.9
1
-500
LZ (DQ)
HZ (DQ)
DQ Strobe Input Timing
t
-0.25
DQSS
t
0.45
DQSL
t
0.45
DQSH
t
0.2
DSS
t
0.2
DSH
t
0.9
WPRE
t
0.3
WPST
DQ Strobe Output Timing
t
-255
DQSCK
t
DQ LOW-Z me from CK, CK\
DQ HIGH-A me from CK, CK\
Base (specificaon)
VREF @ 1V/ns
Base (specificaon)
VREF @ 1V/ns
Base (specificaon)
VREF @ 1V/ns
t
DQ Output HOLD me from DQS, DQS\
DQS, DQS\ to DQ SKEW, per access
Data HOLD me from DQS,
DQS\
Minimum Data Pulse Width
Data SETUP me to DQS, DQS\
Data SETUP me to DQS, DQS\
Parameter
Note 27
250
250
Note 24
10
255
0.25
0.55
0.55
-
250
250
-
-15 (DDR3-1333)
[CWL=1.5; 9-9-9]
Symbol
MIN
MAX
DQ Input Timing
t
DS AC175
30
t
DS AC150
180
65
t
DH AC100
165
t
400
DIPW
DQ Ouput Timing
t
125
DQSQ
0.3
0.4
0.4
-450
0.9
1
-225
-0.27
0.45
0.45
0.18
0.18
0.9
0.3
-
-450
0.38
-
10
160
45
145
360
Note 27
225
225
Note 24
10
225
0.27
0.55
0.55
-
225
225
-
100
-
0.3
0.4
0.4
-390
0.9
1
-195
-0.27
0.45
0.45
0.18
0.18
0.9
0.3
-
-390
0.38
-
135
20
120
320
Note 27
195
195
Note 24
10
195
0.27
0.55
0.55
-
195
195
-
85
-
-12 (DDR3-1600)
-11 (DDR3-1866)
[CWL=1.25; 11-11-11] [CWL=1.07; 13-13-13]
MIN
MAX
MIN
MAX
CK
CK
CK
ps
ps
CK
ns
ps
CK
CK
CK
CK
CK
CK
CK
ps
ps
tCK (AVG)
ps
ps
ps
ps
ps
ps
ps
ps
Units
23,27
21
21
22,23
22,23
23,24
26
23
25
25
25
22,23
22,23
21
18,19
19,20
18,19
19,20
18,19
19,20
41
Notes
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 47 (SHEET 2 OF 6) - ELECTRICAL CHARACTERISTICS AND AC OPERATING CONDITIONS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
2KB page size
1KB page size
MULTIPURPOSE REGISTER READ burst end to mode register set for
mulpurpose register exit
MODE REGISTER SET command cycle me
MODE REGISTER SET command update delay
t
DAL
MPRR
MOD
MRD
t
t
t
RTP
CCD
MIN = 1CK; MAX = n/a
MIN = 4CK; MAX = n/a
MIN = greater of 12CK or 15ns; MAX = n/a
MIN = WR + tRP/tCK (AVG); MAX = n/a
MIN = greater of 4CK or 7.5ns; MAX = n/a
MIN = 4CK; MAX = n/a
t
MIN = greater of 4CK or 7.5ns; MAX = n/a
MIN = 15ns; MAX = n/a
WTR
WR
t
t
t
Auto precharge WRITE recovery + PRECHARGE me
Delay from start of internal WRITE transacon to internal READ
command
READ-to-PRECHARE me
CAS\-to-CAS\ command delay
WRITE recovery me
Four ACTIVATE windows for 1KB page size
Four ACTIVATE windows for 2KB page size
ACTIVATE-to-ACTIVATE
minimum command period
DLL Locking me
Base (specificaon)
CTRL, CMD, ADDR setup to CK,
VREF @ 1V/ns
CK\
Base (specificaon)
CTRL, CMD, ADDR setup to CK,
VREF @ 1V/ns
CK\
Base (specificaon)
CTRL, CMD, ADDR hold to CK,
VREF @ 1V/ns
CK\
Minimum CTRL, CMD, ADDR pulse width
ACTIVATE to Internal READ or WRITE delay
PRECHARGE command period
ACTIVATE-to-PRECHARGE command period
ACTIVATE-to-ACTIVATE command period
Parameter
-15 (DDR3-1333)
-12 (DDR3-1600)
-11 (DDR3-1866)
[CWL=1.5; 9-9-9] [CWL=1.25; 11-11-11] [CWL=1.07; 13-13-13]
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
Command and Address Timing
t
512
512
512
DLLK
65
65
45
t
IS AC175
240
220
200
150
190
170
t
IS AC150
275
340
320
100
140
120
t
IH DC100
200
240
220
t
535
620
560
IPW
t
See "Speed Bin Table (#49) for tRCD
RCD
t
See "Speed Bin Table (#49) for tRP
RP
t
See "Speed Bin Table (#49) for tRAS
RAS
t
See "Speed Bin Table (#49) for tRC
RCD
MIN=greater of 4CK MIN=greater of 4CK MIN=greater of 4CK
or 5ns
or 6ns
or 6ns
t
RRD
MIN=greater of 4CK
MIN=greater of 4CK or 7.5ns
or 6ns
25
30
30
t
FAW
35
45
40
-
CK
CK
CK
CK
CK
CK
CK
CK
31,34
31,32,33
31
31
31
CK
ns
ns
31
28
29,30
20,30
29,30
20,30
29,30
20,30
41
31
31
31,32
31
Notes
CK
CK
ps
ps
ps
ps
ps
ps
ps
ns
ns
ns
ns
Units
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 47 (SHEET 3 OF 6) - ELECTRICAL CHARACTERISTICS AND AC OPERATING CONDITIONS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
TC ≤ 85˚C
TC >85˚C ≤ 105˚C
TC >105˚C ≤ 125˚C
TC ≤ 85˚C
TC >85˚C ≤ 105˚C
TC >105˚C ≤ 125˚C
Valid clocks before SELF REFRESH exit, POWER-DOWN exit, or RESET
exit
Valid clocks aer SELF REFRESH entry or POWER-DOWN entry
MINIMUM CKE LOW pulse width for SELF REFRESH entry to SELF
REFRESH exit ming
EXIT SELF REFRESH TO commands requiring a locked DLL
Exit SELF REFRESH TO commands not requiring a locked DLL
Maximum REFRESH
period/interval
Maximum REFRESH period
REFRESH-to-ACTIVATE or REFRESH command period
RESET\ LOW to power supplies stable
RESET\ LOW to I/O and RTT HIGH-Z
Begin power supply ramp to power supplies stable
Exit RESET from CKE HIGH to a valid command
Normal operaon
POWER-UP and RESET operaon
ZQCS command: Short Calibraon Time
ZQCL command: Long
Calibraon me
Parameter
ZQINIT
512
512
512
t
VDDPR
REFI
-
CKSRE
CKESR
XSDLL
XS
CKSRX
t
t
t
t
t
SELF REFRESH Timing
t
t
RPS
IOZ
REFRESH Timing
t
RFC - 1Gb
t
RFC - 2Gb
t
RFC - 4Gb
t
MIN = greater of 5CK or 10ns; MAX = n/a
MIN = greater of 5CK or 10ns; MAX = n/a
MIN = tCKE (MIN) + CK; MAX = n/a
MIN = tDLLK (MIN); MAX = n/a
CK
CK
CK
CK
CK
ns
ns
ns
ms
ms
ms
μs
μs
μs
MIN = 110; MAX = 70,200
MIN = 160; MAX = 70,200
MIN = 260; MAX = 70,200
64 (1X)
32 (2X)
24
7.8
3.9
2.9
MIN = greater of 5CK or tRFC + 10ns; MAX = n/a
ms
ns
ms
CK
CK
CK
CK
Units
MIN = 0; MAX = 200
MIN = n/a; MAX = 20
MIN = n/a; MAX = 200
-
-
-12 (DDR3-1600)
-11 (DDR3-1866)
[CWL=1.25; 11-11-11] [CWL=1.07; 13-13-13]
MIN
MAX
MIN
MAX
256
256
256
ZQOPER
t
64
64
64
ZQCS
Inializaon and RESET Timing
t
MIN = greater of 5CK or tRFC + 10ns; MAX = n/a
XPR
t
t
-15 (DDR3-1333)
[CWL=1.5; 9-9-9]
Symbol
MIN
MAX
Calibraon Timing
28
36
36
36
36
36
36
35
Notes
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 47 (SHEET 4 OF 6) - ELECTRICAL CHARACTERISTICS AND AC OPERATING CONDITIONS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
t
BL8 (OTF, MRS) BC4OTF
BC4MRS
WRPDEN
WRPDEN
RDPDEN
WRAPDEN
t
t
t
XP
XPDLL
t
t
WRAPDEN
POWER-DOWN Exit Timing
t
BC4MRS
BL8 (OTF, MRS) BC4OTF
DLL on, any valid command, or DLL off to commands not requiring DLL
locked
PRECHARGE POWER-DOWN with DLL off to command requiring DLL
locked
WRITE with AUTO PRECHARGE
command to POWER-DOWN
entry
WRITE Command to POWERDOWN entry
READ/READ with AUTO PRECHARGE commant to POWER-DOWN entry
PRPDEN
REFPDEN
MRSPDEN
REFRESH command to POWER-DOWN entry
MRS command to POWER-DOWN entry
t
t
ACTPDEN
PRECHARGE/PRECHARGE ALL command to POWER-DOWN entry
t
WL - 1CK
ANPD + tXPDLL
MIN = 2
MIN = 2
MIN = 2
MIN = Greater of 10CK or 24ns; MAX = n/a
MIN = Greater of 3CK or 6.0ns; MAX = n/a
MIN = WL + 2 + WR + 1
MIN = WL + 4 + WR + 1
t
MIN = WL + 2 + WR/ CK (AVG)
t
MIN = WL + 4 + tWR/tCK (AVG)
MIN = RL + 4 + 1
MIN = tMOD (MIN)
MIN = 1
MIN = 1
MIN = 1
t
Greater of tANPD or tRFC - REFRESH command to CKE LOW me
POWER-DOWN Entry MINIMUM Timing
t
ACTIVATE command to POWER-DOWN entry
PDX
POWER-DOWN exit period: ODT either synchronous or asynchronous
ANPD
PDE
t
POWER-DOWN entry period: ODT eher synchronous or asynchronous
Begin POWER-DOWN period prior to CKE registered HIGH
Command pass disable delay
POWER-DOWN entry to POWER-DOWN exit ming
CKE MIN pulse width
Parameter
-15 (DDR3-1333)
-12 (DDR3-1600)
-11 (DDR3-1866)
[CWL=1.5; 9-9-9] [CWL=1.25; 11-11-11] [CWL=1.07; 13-13-13]
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
POWER-DOWN Timing
Greater of 3CK or
Greater of 3CK or
Greater of 3CK or
t
CKE (MIN)
5.625ns
5ns
5ns
t
MIN = 1; MAX = n/a
CPDED
t
MIN = tCKE (MIN); MAX = 60ms
PD
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
CK
Units
28
37
Notes
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 47 (SHEET 5 OF 6) - ELECTRICAL CHARACTERISTICS AND AC OPERATING CONDITIONS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
AON
AOF
First DQS, DQS\ RISING edge
DQS; DQS\ delay
WRITE Leveling SETUP from rising CK, CK\ crossing to rising DQS, DQS\
crossing
WRITE Leveling HOLD from rising DQS, DQS\ crossing to rising CK, CK\
crossing
WRITE Leveling output delay
WRITE Leveling output error
RTT_NOM-to=RTT_WR change skew
RTT_WR-to-RTT_NOM change skew - BC4
RTT_WR-to-RTT_NOM change skew - BC8
RTT dynamic change skew
ODT HIGH me without WRITE command or with WRITE command and
BC8
ODT HIGH me without WRITE command or with WRITE command and
BC4
t
WLH
WLS
WLO
WLOE
t
t
t
0
0
195
195
9
2
-
-
-
0
0
163
163
40
25
7.5
2
-
-
-
WL - 2CK
4CK + ODTL OFF
6CK + ODTL OFF
0.3
0.7
MIN = 4; MAX = n/a
ODTH4
Dynamic ODT Timing
ODTLCNW
ODTLCNW4
ODTLCNW8
t
0.3
ADC
WRITE Leveling Timing
t
40
WLMRD
t
25
WLDQSEN
MIN = 6; MAX = n/a
ODTH8
0.7
MIN = 2; MAX = 8.5
AOFPD
t
225
0.7
Asynchronous RTT TURN-OFF delay (POWER-DOWN with DLL OFF)
-225
0.3
MIN = 2; MAX = 8.5
250
0.7
AONPD
-250
0.3
t
t
t
Symbol
ODT Timing
ODTL on
ODTL off
0
0
140
140
40
25
0.3
-195
0.3
7.5
2
-
-
-
0.7
195
0.7
-12 (DDR3-1600)
-11 (DDR3-1866)
[CWL=1.25; 11-11-11] [CWL=1.07; 13-13-13]
MIN
MAX
MIN
MAX
Asynchronous RTT TURN-ON delay (POWER-DOWN with DLL OFF)
RTT synchronous TURN-ON delay
RTT synchronous TURN-OFF delay
RTT TURN-ON from ODTL ON reference
RTT TURN-OFF from ODTL OFF reference
Parameter
-15 (DDR3-1333)
[CWL=1.5; 9-9-9]
MIN
MAX
ns
ns
ps
ps
CK
CK
CK
CK
CK
CK
CK
CK
ns
ns
CK
CK
ps
CK
Units
39
40
38
38
40
23,38
39,40
Notes
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 47 (SHEET 6 OF 6) - ELECTRICAL CHARACTERISTICS AND AC OPERATING CONDITIONS
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
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High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
NOTES CONTINUED
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38.
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
COMMAND AND ADDRESS SETUP, HOLD, AND DERATING
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TABLE 48: COMMAND AND ADDRESS SETUP AND HOLD VALUES REFERENCED AT 1V/NS – AC/DC BASED
Symbol
DDR3-1333
DDR3-1600
DDR3-1866
UNITS
tIS(base)AC
-
SV
V,+$&9IL$&
tIS(base)AC
-
SV
V,+$&9IL$&
SV
V,+$&9IL$&
tIH(base)DC100
REFERENCE
TABLE 49: DERATING VALUES FOR tIS/tIH – AC175/DC100-BASED
Shaded cells indicate slew-rate combinations not supported
'tIS, 'tIH Derating (ps) - AC/DC-Based, AC175 Threshold; VIH(AC) = VREF(DC) + 175mV, VIL(AC) = VREF(DC) - 175mV
CMD/ADDR
Slew Rate V/ns
CK, CK\ Differential Slew Rate
4.0V/ns
3.0V/ns
2.0V/ns
1.8V/ns
1.6V/ns
1.4V/ns
1.2V/ns
1.0V/ns
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
2.0
88
88
88
112
120
128
100
83
91
99
1.0
0
0
0
0
0
0
8
8
8
32
0.9
-2
-2
-2
12
22
20
30
30
38
0.8
-10
-10
-10
2
-2
2
18
-11
-11
-11
-3
-8
-3
0
13
8
21
18
29
-9
-18
-9
-10
-2
8
23
-32
-11
-2
10
-38
-30
-22
-10
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 50: DERATING VALUES FOR tIS/tIH – AC150/DC100-BASED
Shaded cells indicate slew-rate combinations not supported
'tIS, 'tIH Derating (ps) - AC/DC-Based, AC150 Threshold; VIH(AC) = VREF(DC) + 150mV, VIL(AC) = VREF(DC) - 150mV
CMD/ADDR
Slew Rate V/ns
CK, CK\ Differential Slew Rate
4.0V/ns
3.0V/ns
2.0V/ns
1.8V/ns
1.6V/ns
1.4V/ns
1.2V/ns
1.0V/ns
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
'tIS
'tIH
2.0
83
91
99
100
82
90
1.0
0
0
0
0
0
0
8
8
32
0.9
0
0
0
8
12
20
32
30
0.8
0
-10
0
-10
0
-10
8
-2
32
0
0
0
8
-8
0
8
32
18
-1
-1
-1
-18
-10
23
-2
31
8
39
-10
-10
-10
-2
-32
22
30
10
-9
-1
-10
TABLE 51: MINIMUM REQUIRED TIME tVAC ABOVE VIH(AC) FOR A VALID TRANSITION
Below VIL(AC)
Slew Rate (V/ns)
tVAC
at 175mV(ps)
tVAC
at 150mV(ps)
tVAC
at 135mV(ps)
tVAC
at 125mV(ps)
>2.0
200
2.0
190
180
1.0
38
0.9
130
0.8
29
120
22
110
QD
13
QD
0
QD
QD
0
QD
QD
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 25 - NOMINAL SLEW RATE AND tVAC FOR tIS (COMMAND AND ADDRESS – CLOCK)
t IS
t IH
t IS
t IH
CK
CK#
DQS#
DQS
VDDQ
t VAC
VIH(AC) MIN
VREF to AC
region
VIH(DC) MIN
Nominal
slew rate
VREF(DC)
Nominal
slew rate
VIL(DC) MAX
VREF to AC
region
VIL(DC) MAX
t VAC
VSS
∆TF
Setup slew rate
falling signal
∆TR
VREF(DC) - VIL(AC) MAX
Setup slew rate
risin g signal
=
∆TF
Notes:
LOGIC Devices Incorporated
VIH(AC) MIN - V REF(DC)
=
∆TR
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 26 - NOMINAL SLEW RATE FOR tIH (COMMAND AND ADDRESS – CLOCK)
t IS
t IH
t IS
t IH
CK
CK#
DQS#
DQS
VDDQ
VIH(AC) MIN
VIH(DC) MIN
Nominal
slew rate
DC to V REF
region
VREF(DC)
Nominal
slew rate
DC to V REF
region
VIL(DC) MAX
VIL(AC) MAX
VSS
∆TF
∆TR
Hol d slew rate
=
rising signal
VREF(DC) - VIL(DC) MAX
Hol d slew rate
falling signal =
∆TR
Notes:
LOGIC Devices Incorporated
www.logicdevices.com
VIH(DC) MIN - V REF(DC)
∆TF
1. Both the clock and the strobe are drawn on different time scales.
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 27 - TANGENT LINE FOR tIS (COMMAND AND ADDRESS – CLOCK)
t IS
t IH
t IS
t IH
CK
CK#
DQS#
DQS
VDDQ
t VAC
Nominal
line
VIH(AC) MIN
VREF to AC
region
VIH(DC) MIN
Tangent
line
VREF(DC)
Tangent
line
VIL(DC) MAX
VREF to AC
region
VIL(AC) MAX
Nominal
line
t VAC
∆TR
VSS
Setup slew rate
rising signal =
∆TF
Notes:
LOGIC Devices Incorporated
Tangent line (V IH [ DC] MIN - VREF[ DC ])
∆TR
Tangent line (VREF [ DC] - V IL[ AC] MAX)
Setup slew rate
falling signal =
∆TF
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 28 - TANGENT LINE FOR tIH (COMMAND AND ADDRESS – CLOCK)
t IS
t IH
t IS
t IH
CK
CK#
DQS #
DQS
VDDQ
VIH(AC) MIN
Nominal
line
VIH(DC) MIN
DC to V REF
region
Tangent
line
VREF(DC)
DC to V REF
region
Tangent
line
Nominal
line
VIL( DC) MAX
VIL( AC) MAX
VSS
∆TR
∆TR
Hol d slew rate
rising signal =
Tangent line (V REF [ DC] - V IL[ DC] MAX)
Hol d slew rate
falling signal =
Tangent line (V IH [ DC] MIN - VREF[ DC])
∆TR
∆TF
Notes:
LOGIC Devices Incorporated
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
DATA SETUP, HOLD AND DERATING
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TABLE 52: DATA SETUP AND HOLD VALUES AT 1V/NS (DQSX, DQSX\ AT 2V/NS) - AC/DC BASED
DDR3-1333
DDR3-1600
tDS(base)AC175
Symbol
-
-
DDR3-1866
-
UNITS
SV
REFERENCE
V,+$&9IL$&
tDS(base)AC175
-
-
-
SV
V,+$&9IL$&
tDS(base)DC150
30
10
10
SV
V,+$&9IL$&
tDS(base)DC150
SV
V,+$&9IL$&
TABLE 53: DERATING VALUE FOR tDS/tDH – AC175/DC100 - BASED
Shaded cells indicate slew-rate combinations not supported
ǻtDS, ǻtDH Derating (ps) – AC175/D100-Based
DQ
Slew Rate V/ns
DQS, DQS# Differential Slew Rate
4.0V/ns
3.0V/ns
2.0V/ns
1.8V/ns
1.6V/ns
1.4V/ns
1.2V/ns
1.0V/ns
'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH
2.0
88
88
88
1.0
0
0
0
0
0
0
8
8
-2
-2
12
22
20
-10
2
-2
10
18
-3
-8
0
13
8
21
18
29
-1
-10
-2
8
23
-11
0.9
0.8
LOGIC Devices Incorporated
www.logicdevices.com
-2
10
-30
-22
-10
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 54: DERATING VALUE FOR tDS/tDH – AC150/DC100 - BASED
Shaded cells indicate slew-rate combinations not supported
ǻtDS, ǻtDH Derating (ps) – AC150/DC100-Based
DQ Slew
Rate V/ns
DQS, DQS# Differential Slew Rate
4.0V/ns
3.0V/ns
2.0V/ns
1.8V/ns
1.6V/ns
1.4V/ns
1.2V/ns
1.0V/ns
'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH 'tDS 'tDH
2.0
1.0
0
0
0
0
0
0
8
8
0
0
8
12
20
0
-10
8
-2
32
8
-8
0
8
32
18
-10
23
-2
31
8
39
22
30
10
-10
0.9
0.8
TABLE 55: REQUIRED TIME tVAC ABOVE VIH(AC) (BELOW VIL[AC]) FOR A VALID TRANSITION
tVAC
Slew Rate (V/ns)
at 175mV(ps) [MIN]
tVAC
at 150mV(ps) [MIN]
>2.0
2.0
1.0
38
0.9
0.8
29
22
13
0
0
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 29 - NOMINAL SLEW RATE AND tVAC FOR tDS (DQ – STROBE)
CK
CK#
DQS#
DQS
t DS
t DH
t DS
t DH
VDDQ
t VAC
VIH(AC) MIN
VREF to AC
region
VIH(DC) MIN
Nominal
slew rate
VREF(DC)
Nominal
slew rate
VIL(DC) MAX
VREF to AC
region
VIL(AC) MAX
t VAC
VSS
∆TF
Setup slew rate
=
rising signal
Notes:
LOGIC Devices Incorporated
∆TR
VREF(DC) - VIL(AC) MAX
∆TF
Setup slew rate
=
rising signal
VIH(AC) MIN - VREF (DC)
∆TR
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 30 - NOMINAL SLEW RATE FOR tDH (DQ – STROBE)
CK
CK#
DQS#
DQS
t DS
t DH
t DS
t DH
VDDQ
VIH(AC) MIN
VIH(DC) MIN
Nominal
slew rate
DC to V REF
region
VREF(DC)
Nominal
slew rate
DC to V REF
region
VIL(DC) MAX
VIL(AC) MAX
VSS
∆TF
∆TR
Hold slew rate
=
rising signal
Notes:
LOGIC Devices Incorporated
VREF(DC) - VIL(DC) MAX
∆TR
Hold slew rate
=
falling signal
VIH(DC) MIN - V REF(DC)
∆TF
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 31 - NOMINAL SLEW RATE AND tVAC FOR tDS (DQ – STROBE)
CK
CK#
DQS#
DQS
t DS
t DH
t DS
t DH
VDDQ
Nominal
line
t VAC
VIH(AC) MIN
VREF to AC
region
VIH(DC) MIN
Tangent
line
VREF(DC)
Tangent
line
VIL(DC) MAX
VREF to AC
region
VIL(AC) MAX
Nominal
line
t VAC
∆TR
VSS
Setup slew rate
rising signal
=
Tangent line (V IH[ AC ] MIN - V REF [ DC])
∆TR
∆TF
Setup slew rate
falling signal
=
Tangent line (V REF[ DC] - V IL[ AC] MAX)
∆TF
Notes:
LOGIC Devices Incorporated
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 32 - NOMINAL SLEW RATE FOR tDH (DQ – STROBE)
CK
CK#
DQS#
DQS
t DS
t DH
t DS
t DH
VDDQ
VIH(AC) MIN
Nominal
line
VIH(DC) MIN
DC to VREF
region
Tangent
line
VREF(DC)
DC to VREF
region
Tangent
line
Nominal
line
VIL(DC) MAX
VIL(AC) MAX
VSS
∆TR
Notes:
LOGIC Devices Incorporated
∆TF
Tangent line (V REF[ DC] - V IL[ DC] MAX)
Hol d slew rate
falling signal
=
Hol d slew rate
falling signal
=
∆TR
Tangent line (V IH [ DC] MIN - VREF[ DC])
∆TF
1. Both the clock and the strobe are drawn on different time scales.
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
COMMANDS TRUTH TABLE
TABLE 56: TRUTH TABLE - COMMAND
PACKAGE OUTLINE DIMENSIONS
CKE
Function
Symbol
Prev
Cycle
Next
Cycle
CS\
RAS\
CAS\
WE\
BA[2:0]
An
A12
A10
A[11,0:0] Notes
Mode Register Set
MRS
+
+
L
L
L
L
%$
REFRESH
5()
+
+
L
L
L
+
V
V
V
V
V
SELF REFRESH entry
65(
+
L
L
L
L
+
V
V
V
V
V
SELF REFRESH exit
65;
L
+
+
L
V
+
V
+
V
+
V
V
V
V
V
35(
+
+
L
L
L
L
9%$
V
V
L
V
35($
+
+
L
L
L
L
V
V
V
+
V
$&7
+
+
L
L
L
+
%$
:5
+
+
L
+
+
L
%$
5)8
V
L
&$
8
%&27)
:56
+
+
L
+
+
L
%$
5)8
L
L
&$
8
BL8OTF
:56
+
+
L
+
+
L
%$
5)8
+
L
&$
8
BL8MRS
%&056
:5$3
+
+
L
+
+
L
%$
5)8
V
+
&$
8
%&27)
:5$36
+
+
L
+
+
L
%$
5)8
L
+
&$
8
BL8OTF
:5$36
+
+
L
+
+
L
%$
5)8
+
+
&$
8
BL8MRS
%&056
RD
+
+
L
+
+
+
%$
5)8
V
L
&$
8
%&27)
5'6
+
+
L
+
+
+
%$
5)8
L
L
&$
8
BL8OTF
RDS8
+
+
L
+
+
+
%$
5)8
+
L
&$
8
Single-Bank PRECHARGE
PRECHARGE all banks
Bank ACTIVATE
BL8MRS
%&056
WRITE
WRITE with AUTO
PRECHARGE
READ
READ with AUTO
PRECHARGE
&$
5'$3
+
+
L
+
+
+
%$
5)8
V
+
&$
8
%&27)
5'$36
+
+
L
+
+
+
%$
5)8
L
+
&$
8
BL8OTF
BL8MRS
%&056
5'$36
+
+
L
+
+
+
%$
5)8
+
+
&$
8
NO OPERATION
123
+
+
L
+
+
+
V
V
V
V
V
9
Device DESELECTED
'(6
+
+
+
;
;
;
;
;
;
;
;
3'(
+
+
V
+
V
+
V
+
V
10
POWER-DOWN entry
+
V
+
V
V
V
V
V
V
V
V
V
V
V
12
3';
L
+
L
+
L
+
ZQ CALIBRATION LONG
=4&/
+
+
L
+
+
L
;
;
;
+
;
ZQ CALIBRATION SHORT
=4&6
+
+
L
+
+
L
;
;
;
L
;
POWER-DOWN exit
L
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LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 57: TRUTH TABLE - CKE
CKE
Current State 3
(n-1)
(n)
Previous Cycle 4
Present Cycle 4
(RAS\, CAS\, WE\, CS\)
Command 5
Action 5
Notes
L
L
v'RQuW&DUHw
0DLQWDLQ32:(5'2:1
1,2
L
+
'(6RU123
32:(5'2:1H[LW
1,2
POWER-DOWN
SELF REFRESH
L
L
v'RQuW&DUHw
0DLQWDLQ6(/)5()5(6+
1,2
Bank(s) ACTIVE
+
+
'(6RU123
6(/)5()5(6+H[LW
1,2
READING
+
L
'(6RU123
$FWLYH32:(5'2:1HQWU\
1,2
WRITING
+
L
'(6RU123
32:(5'2:1HQWU\
1,2
PRECHARGING
+
L
'(6RU123
32:(5'2:1HQWU\
1,2
REFRESHING
+
L
'(6RU123
35(&+$5*(32:(5'2:1HQWU\
1,2
All Banks IDLE
+
L
'(6RU123
35(&+$5*(32:(5'2:1HQWU\
+
L
5()5(6+
6(/)5()5(6+
127(6
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DESELECT (DES)
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7KH123FRPPDQG&6?/2:SUHYHQWVXQZDQWHGFRPPDQGVIURPEHLQJ
UHJLVWHUHG GXULQJ LGOH RU ZDLW VWDWHV 2SHUDWLRQV DOUHDG\ LQ SURJUHVV DUH
QRWDIIHFWHG
ZQ CALIBRATION
ZQ Calibration LONG (ZQCL)
7KH=4&/FRPPDQGLVXVHGWRSHUIRUPWKHLQLWLDOFDOLEUDWLRQGXULQJDSRZHUXSLQLWLDOL]DWLRQDQGUHVHWVHTXHQFH7KLVFRPPDQGPD\EHLVVXHGDWDQ\WLPHE\
WKHFRQWUROOHUGHSHQGLQJRQWKHV\VWHPHQYLURQPHQW7KH=4&/FRPPDQGWULJJHUVWKHFDOLEUDWLRQHQJLQHLQVLGHWKH6'5$0$IWHUFDOLEUDWLRQLVDFKLHYHGWKH
FDOLEUDWHGYDOXHVDUHWUDQVIHUUHGIURPWKHFDOLEUDWLRQHQJLQHWRWKH6'5$0,2ZKLFKDUHUHIOHFWHGDVXSGDWHG5ONDQG2'7YDOXHV
7KH6'5$0LVDOORZHGDWLPLQJZLQGRZGHILQHGE\HLWKHU t=4,1,7RU t=423(5WRSHUIRUPWKHIXOOFDOLEUDWLRQDQGWUDQVIHURIYDOXHV:KHQ=4&/LVLVVXHG
GXULQJWKHLQLWLDOL]DWLRQVHTXHQFHWKHWLPLQJSDUDPHWHUW=4,1,7PXVWEHVDWLVILHG:KHQLQLWLDOL]DWLRQLVFRPSOHWHVXEVHTXHQW=4&/FRPPDQGVUHTXLUHWKH
WLPLQJSDUDPHWHUt=423(5WREHVDWLVILHG
ZQ Calibration SHORT (ZQCS)
7KH=4&6FRPPDQGLVXVHGWRSHUIRUPSHULRGLFFDOLEUDWLRQVWRDFFRXQWIRUVPDOOYROWDJHDQGWHPSHUDWXUHYDULDWLRQV7KHVKRUWHUWLPLQJZLQGRZLVSURYLGHG
WRSHUIRUPWKHUHGXFHGFDOLEUDWLRQDQGWUDQVIHURIYDOXHVDVGHILQHGE\WLPLQJSDUDPHWHUt=4&6$=4&6FRPPDQGFDQHIIHFWLYHO\FRUUHFWDPLQLPXPRI
RON and RTTLPSHGDQFHHUURUVZLWKLQFORFNF\FOHVDVVXPLQJWKHPD[LPXPVHQVLWLYLWLHVVSHFLILHGLQ7DEOHDQG7DEOH
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ACTIVATE
READ
7KH $&7,9$7( FRPPDQG LV XVHG WR RSHQ RU $&7,9$7( D URZ LQ D
SDUWLFXODU EDQN IRU D VXEVHTXHQW DFFHVV 7KH YDOXH RQ WKH %$ >@
LQSXWVVHOHFWVWKHEDQNDQGWKHDGGUHVVSURYLGHGRQLQSXWV$>Q@VHOHFWV
WKHURZ7KLVURZUHPDLQVRSHQRU$&7,9(IRUDFFHVVHVXQWLOD35(&+$5*(FRPPDQGLVLVVXHGWRWKDWEDQN
7KH5($'FRPPDQGLVXVHGWRLQLWLDWHDEXUVW5($'DFFHVVWRDQ$&7,9(
URZ 7KH DGGUHVV SURYLGHG RQ LQSXWV $>@ VHOHFWV WKH VWDUWLQJ FROXPQ
DGGUHVVGHSHQGLQJRQWKHEXUVWOHQJWKDQGEXUVWW\SHVHOHFWHGVHHWDEOH
7KHYDOXHRQLQSXW$GHWHUPLQHVZKHWKHURUQRWDXWRSUHFKDUJHLV
XVHG,IDXWRSUHFKDUJHLVVHOHFWHGWKHURZEHLQJDFFHVVHGZLOOEH35(&+$5*('DWWKHHQGRIWKH5($'EXUVW,I$87235(&+$5*(LVQRW
VHOHFWHGWKHURZZLOOUHPDLQRSHQIRUVXEVHTXHQWDFFHVVHV7KHYDOXHRQ
LQSXW$LIHQDEOHGLQWKH02'(5(*,67(5ZKHQWKH5($'FRPPDQG
LVLVVXHGGHWHUPLQHVZKHWKHU%&FKRSRU%/LVXVHG$IWHUD5($'
FRPPDQGLVLVVXHGWKH5($'EXUVWPD\QRWEHLQWHUUXSWHG$VXPPDU\
RI5($'FRPPDQGVLVVKRZQLQ7DEOH
$35(&+$5*(FRPPDQGPXVWEHLVVXHGEHIRUHRSHQLQJDGLIIHUHQWURZ
LQWKHVDPHEDQN
TABLE 58: READ COMMAND SUMMARY
CKE
Function
READ
READ with AUTO
PRECHARGE
Symbol
Prev
Cycle
Next
Cycle
CS\
RAS\
CAS\
WE\
+
L
+
L
+
%$
5)8
+
L
+
L
+
%$
RDS8
+
L
+
L
+
%$
BL8MRS
%&056
5'$3
+
L
+
L
+
%&27)
5'$36
+
L
+
L
+
BL8OTF
5'$36
+
L
+
L
+
BL8MRS
%&056
RD
%&27)
5'6
BL8OTF
BA[2:0]
An
A12
A10
A[11,0:0] Notes
V
L
&$
5)8
L
L
&$
5)8
+
L
&$
%$
5)8
V
+
&$
%$
5)8
L
+
&$
%$
5)8
+
+
&$
WRITE
7KH:5,7(FRPPDQGLVXVHGWRLQLWLDWHDEXUVW:5,7(DFFHVVWRDQ$&7,9(URZ7KHYDOXHRQWKH%$>@LQSXWVVHOHFWVWKHEDQN7KHYDOXHRQLQSXW$
GHWHUPLQHVZKHWKHURUQRW$87235(&+$5*(LVXVHG7KHYDOXHRQLQSXW$LIHQDEOHGLQWKH02'(5(*,67(5>05@ZKHQWKH:5,7(FRPPDQGLV
LVVXHGGHWHUPLQHVZKHWKHU%&FKRSRU%/LVXVHG7KH:5,7(FRPPDQGVXPPDU\LVVKRZQLQ7DEOH
TABLE 59: WRITE COMMAND SUMMARY
CKE
Function
Symbol
BL8MRS
%&056
WRITE
WRITE with AUTO
PRECHARGE
:5
Prev
Cycle
Next
Cycle
CS\
RAS\
CAS\
WE\
BA[2:0]
An
A12
A10
A[11,0:0] Notes
+
L
+
L
L
%$
5)8
V
L
&$
+
%&27)
:56
+
L
L
L
%$
5)8
L
L
&$
BL8OTF
:56
+
L
+
L
L
%$
5)8
+
L
&$
+
BL8MRS
%&056
:5$3
+
L
L
L
%$
5)8
V
+
&$
%&27)
:5$36
+
L
+
L
L
%$
5)8
L
+
&$
+
L
+
L
L
%$
5)8
+
+
&$
BL8OTF
LOGIC Devices Incorporated
:5$36
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
PRECHARGE
REFRESH
7KH35(&+$5*(FRPPDQGLVXVHGWR'($&7,9$7(WKHRSHQURZLQD
SDUWLFXODUEDQNRULQDOOEDQNV7KHEDQNVDUHDYDLODEOHIRUDVXEVHTXHQW
URZDFFHVVDWDVSHFLILHGWLPHt53DIWHUWKH35(&+$5*(FRPPDQGLV
LVVXHGH[FHSWLQWKHFDVHRIFRQFXUUHQW$87235(&+$5*($5($'RU
:5,7(FRPPDQGWRDGLIIHUHQWEDQNLVDOORZHGGXULQJFRQFXUUHQW$872
35(&+$5*(DVORQJDVLWGRHVQRWLQWHUUXSWWKHGDWDWUDQVIHULQWKHFXUUHQWEDQNDQGGRHVQRWYLRODWHDQ\RWKHUWLPLQJSDUDPHWHUV,QSXW$
GHWHUPLQHVZKHWKHURQHRUDOOEDQNVDUHSUHFKDUJHG,QWKHFDVHZKHUH
RQO\RQHEDQNLVUHFKDUJHG,QSXWV%$>@VHOHFWWKHEDQNRWKHUZLVH
%$>@DUHWUHDWHGDVv'RQuW&DUHw$IWHUDEDQNLV35(&+$5*('LWLV
LQWKHLGOHVWDWHDQGPXVWEHDFWLYDWHGSULRUWRDQ\5($'RU:5,7(FRPPDQGVEHLQJLVVXHGWRWKDWEDQN$35(&+$5*(FRPPDQGLVWUHDWHG
DVD123LIWKHUHLVQRRSHQURZLQWKDWEDQNLGOHVWDWHRULIWKHSUHYLRXVO\RSHQURZLVDOUHDG\LQWKHSURFHVVRISUHFKDUJLQJ+RZHYHUWKH
35(&+$5*(SHULRGLVGHWHUPLQHGE\WKHODVW35(&+$5*(FRPPDQG
LVVXHGWRWKHEDQN
5()5(6+LVXVHGGXULQJQRUPDORSHUDWLRQRIWKH6'5$0DQGLVDQDORJRXV
WR&$6?EHIRUH5$6?&%5UHIUHVKRU$8725()5(6+7KLVFRPPDQG
LVQRQSHUVLVWHQWVRLWPXVWEHLVVXHGHDFKWLPHD5()5(6+LVUHTXLUHG
7KH DGGUHVVLQJ LV JHQHUDWHG E\ WKH LQWHUQDO 5()5(6+ FRPPDQG 7KH
6'5$0UHTXLUHV5()5(6+F\FOHVDWDQDYHUDJHLQWHUYDORIVPD[LPXPZKHQ7$d&RUV0$;ZKHQ7$d&7KH5()5(6+SHULRG
EHJLQVZKHQWKH5()5(6+FRPPDQGLVUHJLVWHUHGDQGHQGV t5)&0,1
later.
7RDOORZIRULPSURYHGHIILFLHQF\LQVFKHGXOLQJDQGVZLWFKLQJEHWZHHQWDVNV
VRPHIOH[LELOLW\LQWKHDEVROXWH5()5(6+LQWHUYDOLVSURYLGHG$PD[LPXP
RIHLJKW5()5(6+FRPPDQGVFDQEHSRVWHGWRDQ\JLYHQ6'5$0PHDQLQJWKDWWKHPD[LPXPDEVROXWHLQWHUYDOEHWZHHQDQ\5()5(6+FRPPDQG
DQG WKH QH[W 5()5(6+ FRPPDQG LV QLQH WLPHV WKH PD[LPXP DYHUDJH
LQWHUYDO UHIUHVK UDWH 6(/) 5()5(6+ PD\ EH HQWHUHG ZLWK XS WR HLJKW
5()5(6+FRPPDQGVEHLQJSRVWHG$IWHUH[LWLQJ6(/)5()5(6+ZKHQ
HQWHUHGZLWKSRVWHG5()5(6+FRPPDQGVDGGLWLRQDOSRVWLQJRI5()5(6+
FRPPDQGV LV DOORZHG WR WKH H[WHQW WKH PD[LPXP QXPEHU RI FXPXODWLYH
SRVWHG5()5(6+FRPPDQGVERWKSUHDQGSRVW6(/)5()5(6+GRHV
QRWH[FHHGHLJKW5()5(6+FRPPDQGV
FIGURE 33 - REFRESH MODE
T0
T2
T1
T3
T4
Ta0
Ta1
Tb0
Tb1
Valid 1
Valid 1
NOP1
NOP1
Tb2
CK#
CK
t CK
t CH
t CL
Valid 1
CKE
Command
NOP 1
PRE
NOP 1
NOP 1
REF
NOP 1
REF 2
ACT
Address
RA
All banks
A10
RA
One bank
Bank(s) 3
BA[2:0]
BA
DQS, DQS# 4
DQ4
DM 4
t RP
t RFC (MIN)
t RFC 2
Indicates A Break in
Time Scale
Notes:
LOGIC Devices Incorporated
Don’t Care
1. NOP commands are shown for ease of illustration; other valid commands may be
possible at these times. CKE must be active during the PRECHARGE, ACTIVATE,
and REFRESH commands, but may be inactive at other times (see “Power-Down
Mode” on page 153).
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
SELF REFRESH
7KH6(/)5()5(6+FRPPDQGLVXVHGWRUHWDLQGDWDLQWKH6'5$0HYHQLIWKHUHVWRIWKHV\VWHPLVSRZHUHGGRZQ:KHQLQWKH6(/)5()5(6+PRGHWKH
6'5$0UHWDLQVGDWDZLWKRXWH[WHUQDOFORFNLQJ7KH6(/)5()5(6+PRGHLVDOVRDFRQYHQLHQWPHWKRGXVHGWRHQDEOHGLVDEOHWKH'//DVZHOODVWRFKDQJH
WKHFORFNIUHTXHQF\ZLWKLQWKHDOORZHGV\QFKURQRXVRSHUDWLQJUDQJH$OOSRZHUVXSSO\LQSXWVLQFOXGLQJ95()&$ and V5()'4PXVWEHPDLQWDLQHGDWYDOLGOHYHOV
XSRQHQWU\H[LWDQGGXULQJ6(/)5()5(6+PRGHRSHUDWLRQ$OOSRZHUVXSSO\LQSXWVLQFOXGLQJ95()&$and V5()'4PXVWEHPDLQWDLQHGDWYDOLGOHYHOVXSRQ
HQWU\H[LWDQGGXULQJ6(/)5()5(6+PRGHXQGHUFHUWDLQFRQGLWLRQV
x9VV95()'4< VDDLVPDLQWDLQHG
x95()'4LVYDOLGDQGVWDEOHSULRUWR&.(JRLQJEDFN+,*+
x7KHILUVW:5,7(RSHUDWLRQPD\QRWRFFXUHDUOLHUWKDQFORFNVDIWHU95()'4LVYDOLG
x$OORWKHU6(/)5()5(6+PRGHH[LWWLPHUHTXLUHPHQWVDUHPHW
DLL DISABLE MODE
,IWKH'//LVGLVDEOHGE\WKH02'(5(*,67(505>@FDQEHVZLWFKHGGXULQJLQLWLDOL]DWLRQRUODWHUWKH6'5$0LVWDUJHWHGEXWQRWJXDUDQWHHGWRRSHUDWH
VLPLODUO\WRWKH1250$/PRGHZLWKDIHZQRWDEOHH[FHSWLRQV
x
x
x
7KH6'5$0VXSSRUWVRQO\RQHYDOXHRI&$6ODWHQF\&/ DQGRQHYDOXHRI&$6:5,7(ODWHQF\&:/ '//',6$%/(PRGHDIIHFWVWKH5($'GDWDFORFNWRGDWDVWUREHUHODWLRQVKLSt'46&.EXWQRWWKH5($'GDWDWRGDWDVWUREHUHODWLRQVKLS
(tDQSQ, t4+6SHFLDODWWHQWLRQLVQHHGHGWROLQHWKH5($'GDWDXSZLWKWKHFRQWUROOHUWLPHGRPDLQZKHQWKH'//LVGLVDEOHG
,Q1250$/RSHUDWLRQ'//RQ t'46&.VWDUWVIURPWKHULVLQJFORFNHGJH$/&/F\FOHVDIWHUWKH5($'FRPPDQG,Q'//',6$%/(
PRGH t'46&.VWDUWV$/ &/yF\FOHVDIWHUWKH5($'FRPPDQG$GGLWLRQDOO\ZLWKWKH'//GLVDEOHGWKHYDOXHRI t'46&.FRXOGEH
ODUJHUWKDQtCK.
7KH2'7IHDWXUHLVQRWVXSSRUWHGGXULQJ'//',6$%/(PRGHLQFOXGLQJG\QDPLF2'77KH2'7UHVLVWRUVPXVWEHGLVDEOHGE\FRQWLQXRXVO\UHJLVWHULQJWKH
2'7EDOO/2:E\SURJUDPPLQJ5TTB125005>@DQG5TTB:505>@WRvwZKLOHLQ'//',6$%/(PRGH
6SHFLILFVWHSVPXVWEHIROORZHGWRVZLWFKEHWZHHQWKH'//HQDEOHDQG'//',6$%/(PRGHVGXHWRDJDSLQWKHDOORZHGFORFNUDWHVEHWZHHQWKHWZRPRGHV
(t&.>$9*@0$;DQG t&.>'//',6$%/(@0,1UHVSHFWLYHO\7KHRQO\WLPHWKHFORFNLVDOORZHGWRFURVVWKLVFORFNUDWHJDSLVGXULQJ6(/)5()5(6+PRGH
7KXVWKHUHTXLUHGSURFHGXUHIRUVZLWFKLQJIURPWKH'//(1$%/(WR'//',6$%/(PRGHLVWRFKDQJHIUHTXHQF\FXULQJVHOIUHIUHVKVHH)LJXUH
1.
2.
3.
6WDUWLQJIURPWKH,'/(VWDWHDOOEDQNVDUH35(&+$5*('DOOWLPLQJVDUHIXOILOOHG2'7LVWXUQHGRIIDQG5TT_NOM and RTTB:5DUH
+,*+=VHW05>@WRvwWR',6$%/(WKH'//
(QWHU6(/)5()5(6+PRGHDIWHUt02'KDVEHHQVDWLVILHG
$IWHUt&.65(LVVDWLVILHGFKDQJHWKHIUHTXHQF\WRWKHGHVLUHGFORFNUDWH
6(/)5()5(6+PD\EHH[LWHGZKHQWKHFORFNLVVWDEOHGZLWKWKHQHZIUHTXHQF\IRUt&.65;
7KH6'5$0ZLOOEHUHDG\IRULWVQH[WFRPPDQGLQWKH'//',6$%/(PRGHDIWHUWKHJUHDWHURItMRD or t02'KDVEHHQVDWLVILHG$=4&/
FRPPDQGVKRXOGEHLVVXHGZLWKDSSURSULDWHWLPLQJPHWDVZHOO
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
L9D3256M32SBG1
L9D3512M32SBG1
PRELIMINARY INFORMATION
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 34 - DLL ENABLE MODE TO DLL DISABLE MODE
T0
T1
Ta0
Ta1
Tb0
Tc0
Td0
Td1
Te0
Te1
Tf0
CK#
CK
Vali d 1
CKE
Command
MRS2
6
NOP
SRE 3
t MOD
SRX 4
NOP
t CKSRE
t CKSRX 8
7
NOP
MRS5
NOP
Vali d 1
t MOD
t XS
t CKESR
ODT 9
Vali d 1
Indicates a Break in
Time Scale
127(6
1.
$Q\YDOLGFRPPDQG
2.
'LVDEOH'//E\VHWWLQJ05>@WRvw
3.
:DLWt;6WKHQVHW05>@WRvwWRHQDEOH'//
:DLWt05'WKHQVHW05>@WRvwWREHJLQ'//5(6(7
:DLWt05'XSGDWHUHJLVWHUV&/&:/DQGZULWHUHFRYHU\PD\EHQHFHVVDU\
:DLWt02'DQ\YDOLGFRPPDQG
6WDUWLQJZLWKWKHLGOHVWDWH
8.
&KDQJHIUHTXHQF\
9.
&ORFNPXVWEHVWDEOHDWOHDVWt&.65;
10.
6WDWLF/2:LQFDVH5TT_NOM or RTTB:5LVHQDEOHGRWKHUZLVHVWDWLF/2:RU+,*+
Don ’t Care
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UHIUHVKPRGHVHH)LJXUHRQSDJH
6WDUWLQJIURPWKHLGOHVWDWHDOOEDQNVDUHSUHFKDUJHGDOOWLPLQJVDUHIXOILOOHG2'7LVWXUQHGRIIDQG5TT_NOM and RTTB:5DUH+LJK=
HQWHUVHOIUHIUHVKPRGH
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7KH'5$0ZLOOEHUHDG\IRULWVQH[WFRPPDQGLQWKH'//HQDEOHPRGHDIWHUWKHJUHDWHURItMRD or t02'KDVEHHQVDWLVILHG+RZHYHU
EHIRUHDSSO\LQJDQ\FRPPDQGRUIXQFWLRQUHTXLULQJDORFNHG'//DGHOD\RIt'//.DIWHU'//5(6(7PXVWEHVDWLVILHG$=4&/FRPPDQG
VKRXOGEHLVVXHGZLWKWKHDSSURSULDWHWLPLQJVPHWDVZHOO
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 35- DLL DISABLE MODE TO DLL ENABLE MODE
T0
Ta0
Ta1
Tb0
Tc0
Tc1
Td0
Te0
Tf0
Tg0
Th0
CK#
CK
CKE
Vali d
t DLLK
Command
SRE1
NOP
SRX2
NOP
t CKSRE
7
t CKSRX 9
8
MRS3
t XS
MRS4
t MRD
MRS5
Vali d 6
t MRD
ODTL off + 1 × t CK
t CKESR
ODT10
Indicates a Break in
Time Scale
Don ’t Care
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1.
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8.
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9.
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10.
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LOGIC Devices Incorporated
www.logicdevices.com
80
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 36 - DLL DISABLE tDQSCK TIMING
T0
T1
T2
T3
T4
T5
T6
T7
T8
T9
T10
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
Add ress
Vali d
RL = AL + C L = 6 (C L = 6, AL = 0)
CL = 6
DQS, DQS# DLL on
DI
b
DQ BL8 DLL on
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
RL (DLLdisable) = AL + (C L - 1) = 5
t DQSCK (DLL_DIS) MIN
DQS, DQS# DLL off
DI
b
DQ BL8 DLL disable
DI
b+1
DI
b+2
DI
b+3
DI
b+4
DI
b+5
DI
b+6
DI
b+7
DI
b+3
DI
b+4
DI
b+5
DI
b+6
t DQSCK (DLL_ DIS) MAX
DQS, DQS# DLL off
DI
b
DQ BL8 DLL disable
DI
b+1
DI
b+2
DI
b+7
Transitioning Data
Don ’t Care
INPUT CLOCK FREQUENCY CHANGE
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v'RQuW&DUHwFKDQJLQJWKHFORFNIUHTXHQF\LVSHUPLVVLEOHSURYLGHGWKHQHZFORFNIUHTXHQF\LVVWDEOHSULRUWRt&.65;:KHQHQWHULQJDQGH[LWLQJVHOIUHIUHVK
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LOGIC Devices Incorporated
www.logicdevices.com
81
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 37- CHANGE FREQUENCY DURING PRECHARGE POWER-DOWN
Previous clock frequency
T0
T1
T2
New clock fre quency
Ta0
Tb0
Tc1
Tc0
Td0
Td1
Te0
Te1
CK#
CK
t CH
t CL
t CH
t CK
t CK
t CKSRE
t IS
t IH
t CH
b
t CK
b
t CL
b
t CH
b
b
b
t CL
t CK
b
b
t CKSRX
t CKE
t IH
CKE
t IS
t CPDED
Command
t CL
b
NOP
NOP
NOP
NOP
NOP
Address
MRS
Valid
NOP
Valid
DLL RESET
t AOFPD/ t AOF
t XP
t IH
t IS
ODT
DQS, DQS#
High-Z
High-Z
DQ
DM
t DLLK
Enter precharge
power-down mode
Frequency
change
Exit precharge
power-down mode
Indicates a Break in
Time Scale
Don’t Care
127(6
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LOGIC Devices Incorporated
www.logicdevices.com
82
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
WRITE LEVELING
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SURFHGXUHLVVKRZQLQ)LJXUH
FIGURE 38- WRITE LEVELING CONCEPT
T0
T1
T2
T3
T4
T5
T6
T7
CK#
CK
Source
Differential DQS
Tn
T0
T1
T2
T3
T4
T5
T4
T5
T6
CK#
CK
Destination
Differential DQS
0
DQ
Destination
Tn
T0
T1
0
T2
T3
T6
CK#
CK
Push DQS to capture
0–1 transition
Differential DQS
1
DQ
1
Don’t Care
LOGIC Devices Incorporated
www.logicdevices.com
83
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
WRITE LEVELING
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WRITE LEVELING PROCEDURE
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LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 39- WRITE LEVELING SEQUENCE
T1
T2
t WLS
t WLH
CK#
CK
Command
MRS1
NOP2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
t MOD
ODT
t WLDQSEN
t DQSL3
t DQSH3
t DQSL3
t DQSH3
Differential DQS4
t WLMRD
t WLO
t WLO
Prime DQ 5
t WLO
t WLOE
Early remaining DQ
t WLO
Late remaining DQ
Indicates a Break in
Time Scale
Undefined Driving Mode
Don’t Care
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LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 40- EXIT WRITE LEVELING
T0
T1
T2
Ta0
Tb0
Tc0
Tc1
Tc2
Td0
Td1
Te0
Te1
NOP
NOP
NOP
NOP
NOP
NOP
NOP
M RS
NOP
t MRD
Valid
NOP
Valid
CK#
CK
Command
Add ress
Valid
MR1
t IS
Valid
t MOD
ODT
ODTL off
R TT DQS, R TT DQS#
t AOF (MIN)
RTT_NOM
t AOF (MAX)
DQS, DQS#
RTT_DQ
t WLO + t WLOE
DQ
CK = 1
Indicates a Break in
Time Scale
Undefined Driving Mode
Transitioning
Don ’t Care
Notes: 1. The DQ result, “= 1,” between Ta0 and Tc0, is a result of the DQS, DQS# signals capturing
CK HIGH just after the T0 state.
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OPERATIONS
Initialization
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LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 41- INITIALIZATION SEQUENCE
T (MAX) = 200ms
VDD
VDDQ
VTT
See power-up
c onditions
in the
initialization
sequence text,
set up 1
VREF
Power-up
ramp
t VTD
Sta ble and
vali d clo ck
T0
T1
t CK
Tc0
Tb0
Ta0
Td0
CK#
CK
t CKSRX
t CL
t CL
t IOz = 20ns
RESET#
t IS
T (MIN) = 10ns
Valid
CKE
Valid
ODT
t IS
Command
NOP
MRS
MRS
MRS
MRS
ZQCL
Add ress
Code
Code
Code
Code
A10
Code
Code
Code
Code
BA0 = L
BA1 = H
BA2 = L
BA0 = H
BA1 = H
BA2 = L
BA0 = H
BA1 = L
BA2 = L
BA0 = L
BA1 = L
BA2 = L
Valid
DM
BA[2:0]
Valid
Valid
A10 = H
Valid
DQS
DQ
RTT
T = 200μs (MIN)
T = 500μs (MIN)
MR2
All voltage
supplies valid
and stable
t MRD
t MRD
t MRD
t XPR
MR3
MR1 with
DLL ena ble
t MOD
MR0 with
DLL reset
t ZQ INIT
ZQ cali bration
t DLLK
DRAM ready for
external commands
Normal
operation
Indicates a Break in
Time Scale
LOGIC Devices Incorporated
www.logicdevices.com
88
Don ’t Care
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MODE REGISTERS
0RGHUHJLVWHUV0505DUHXVHGWRGHILQHYDULRXVPRGHVRISURJUDPPDEOHRSHUDWLRQRIWKH''56'5$0L02'$PRGHUHJLVWHULVSURJUDPPHGYLD
WKH02'(5(*,67(56(7056FRPPDQGGXULQJLQLWLDOL]DWLRQDQGLWUHWDLQVWKHVWRUHGLQIRUPDWLRQH[FHSWIRU05>@ZKLFKLVVHOIFOHDULQJXQWLOLWLVHLWKHU
UHSURJUDPPHG5(6(7?JRHV/2:RUXQWLOWKHGHYLFHORVHVSRZHU
&RQWHQWVRIDPRGHUHJLVWHUFDQEHDOWHUHGE\UHH[HFXWLQJWKH056FRPPDQG,IWKHXVHUFKRRVHVWRPRGLI\RQO\DVXEVHWRIWKHPRGHUHJLVWHUuVYDULDEOHV
DOOYDULDEOHVPXVWEHSURJUDPPHGZKHQWKH056FRPPDQGLVLVVXHG5HSURJUDPPLQJWKHPRGHUHJLVWHUZLOOQRWDOWHUWKHFRQWHQWVRIWKHPHPRU\DUUD\
SURYLGHGLWLVSHUIRUPHGFRUUHFWO\
7KH056FRPPDQGFDQRQO\EHLVVXHGRUUHLVVXHGZKHQDOOEDQNVDUHLGOHDQGLQWKH35(&+$5*('VWDWHt53LVVDWLVILHGDQGQRGDWDEXUVWVDUHLQSURJUHVV$IWHUDQ056FRPPDQGKDVEHHQLVVXHGWZRSDUDPHWHUVPXVWEHVDWLVILHGtMRD and tMOD.
7KHFRQWUROOHUPXVWZDLWt05'EHIRUHLQLWLDWLQJDQ\VXEVHTXHQW056FRPPDQGVVHH)LJXUH
FIGURE 42- MRS-TO-MRS COMMAND TIMING (tMRD)
T0
T1
T2
Ta0
Ta1
Ta2
MRS1
NOP
NOP
NOP
NOP
MRS2
CK#
CK
Command
t MRD
Add ress
Valid
Valid
CKE 3
Indicates a Break in
Time Scale
Don ’t Care
127(6
1.
3ULRUWRLVVXLQJWKH056FRPPDQGDOOEDQNVPXVWEHLGOHDQGSUHFKDUJHGt530,1PXVWEHVDWLVILHG
DQGQRGDWDEXUVWVFDQEHLQSURJUHVVWKHOHYHOLQJSURFHGXUH
2.
t05'VSHFLILHVWKH056WR056FRPPDQGPLQLPXPF\FOHWLPH
3.
&.( PXVW EH UHJLVWHUHG +,*+ IURP WKH 056 FRPPDQG XQWLO t0563'(1 0,1 VHH v3RZHU'RZQ
0RGHwRQSDJH
)RUD&$6ODWHQF\FKDQJHt;3'//WLPLQJPXVWEHPHWEHIRUHDQ\QRQ056FRPPDQG
7KHFRQWUROOHUPXVWDOVRZDLW t02'EHIRUHLQLWLDWLQJDQ\QRQ056FRPPDQGVH[FOXGLQJ123DQG'(6DVVKRZQLQ)LJXUHRQSDJH7KH'5$0
UHTXLUHVt02'LQRUGHUWRXSGDWHWKHUHTXHVWHGIHDWXUHVZLWKWKHH[FHSWLRQRI'//5(6(7ZKLFKUHTXLUHVDGGLWLRQDOWLPH8QWLOt02'KDVEHHQVDWLVILHGWKH
XSGDWHGIHDWXUHVDUHWREHDVVXPHGXQDYDLODEOH
LOGIC Devices Incorporated
www.logicdevices.com
89
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 43- MRS-TO-NONMRS COMMAND TIMING (tMOD)
T1
T2
t WLS
t WLH
CK#
CK
Command
MRS1
NOP2
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
t MOD
ODT
t WLDQSEN
t DQSL3
t DQSH3
t DQSL3
t DQSH3
Differential DQS4
t WLMRD
t WLO
t WLO
Prime DQ 5
t WLO
t WLOE
Early remaining DQ
t WLO
Late remaining DQ
Indicates a Break in
Time Scale
Undefined Driving Mode
Don’t Care
127(6
1.
3ULRUWRLVVXLQJWKH056FRPPDQGDOOEDQNVPXVWEHLGOHWKH\PXVWEHSUHFKDUJHGt53PXVWEH
VDWLVILHGDQGQRGDWDEXUVWVFDQEHLQSURJUHVV
2.
3.
3ULRUWR7DZKHQt02'0,1LVEHLQJVDWLVILHGQRFRPPDQGVH[FHSW123'(6PD\EHLVVXHG
,I577ZDVSUHYLRXVO\HQDEOHG2'7PXVWEHUHJLVWHUHG/2:DW7VRWKDW2'7/LVVDWLVILHGSULRU
WR7D2'7PXVWDOVREHUHJLVWHUHG/2:DWHDFKULVLQJ&.HGJHIURP7XQWLO t02'0,1LV
satisfied at Ta2.
&.( PXVW EH UHJLVWHUHG +,*+ IURP WKH 056 FRPPDQG XQWLO t0563'(1 0,1 DW ZKLFK WLPH
SRZHUGRZQPD\RFFXUVHHv3RZHU'RZQ0RGHwRQSDJH
MODE REGISTER 0 (MR0)
7KHEDVHUHJLVWHU05LVXVHGWRGHILQHYDULRXV''5L02'PRGHVRIRSHUDWLRQ7KHVHGHILQLWLRQVLQFOXGHWKHVHOHFWLRQRIDEXUVWOHQJWKEXUVWW\SH&$6
ODWHQF\RSHUDWLQJPRGH'//5(6(7:5,7(UHFRYHU\DQG35(&+$5*(SRZHUGRZQPRGHDVVKRZQLQ)LJXUH
LOGIC Devices Incorporated
www.logicdevices.com
90
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MODE REGISTER 0 (MR0)
BURST TYPE
BURST LENGTH
$FFHVVHVZLWKLQDJLYHQEXUVWPD\EHSURJUDPPHGWRHLWKHUDVHTXHQWLDO
RUDQLQWHUOHDYHGRUGHU7KHEXUVWW\SHLVVHOHFWHGYLD05>@DVVKRZQ
LQ)LJXUH7KHRUGHULQJRIDFFHVVHVZLWKLQDEXUVWLVGHWHUPLQHGE\WKH
EXUVW OHQJWK WKH EXUVW W\SH DQG WKH VWDUWLQJ FROXPQ DGGUHVV DV VKRZQ
LQ7DEOH''5RQO\VXSSRUWVELWEXUVWFKRSDQGELWEXUVWDFFHVV
PRGHV )XOO LQWHUOHDYHGDGGUHVV RUGHULQJ LVVXSSRUWHG IRU5($'VZKLOH
:5,7(VDUHUHVWULFWHGWRQLEEOH%&RUZRUG%/ERXQGDULHV
%XUVW OHQJWK LV GHILQHG E\ 05>@ VHH )LJXUH 5($' DQG :5,7(
DFFHVVHV WR WKH ''5 6'5$0 L02' DUH EXUVWRULHQWHG ZLWK WKH EXUVW
OHQJWKEHLQJSURJUDPPDEOHWRvwFKRSPRGHvwIL[HGEXUVWRUVHOHFWDEOH XVLQJ $ GXULQJ D 5($':5,7( FRPPDQG RQ WKH IO\ 7KH EXUVW
OHQJWK GHWHUPLQHV WKH PD[LPXP QXPEHU RI FROXPQ ORFDWLRQV WKDW FDQ EH
DFFHVVHGIRUDJLYHQ5($'RU:5,7(FRPPDQG:KHQ05>@LVVHWWR
vwGXULQJD5($':5,7(FRPPDQGLI$ WKHQ%&FKRSPRGHLV
VHOHFWHG,I$ WKHQ%/PRGHLVVHOHFWHG6SHFLILFWLPLQJGLDJUDPV
DQG WXUQDURXQG EHWZHHQ 5($':5,7( DUH VKRZQ LQ WKH 5($':5,7(
VHFWLRQVRIWKLVGRFXPHQW
:KHQ D 5($' RU :5,7( FRPPDQG LV LVVXHG D EORFN RI FROXPQV HTXDO
WRWKHEXUVWOHQJWKLVHIIHFWLYHO\VHOHFWHG$OODFFHVVHVIRUWKDWEXUVWWDNH
SODFHZLWKLQWKLVEORFNPHDQLQJWKDWWKHEXUVWZLOOZUDSZLWKLQWKHEORFNLI
DERXQGDU\LVUHDFKHG7KHEORFNLVXQLTXHO\VHOHFWHGE\$>L@ZKHQWKH
EXUVW OHQJWK LV VHW WR vw DQG E\ $>L@ ZKHQ WKH EXUVW OHQJWK LV VHW WR vw
ZKHUH$LLVWKHPRVWVLJQLILFDQWFROXPQDGGUHVVELWIRUDJLYHQVWDUWLQJORFDWLRQZLWKLQWKHEORFN7KHSURJUDPPHGEXUVWOHQJWKDSSOLHVWRERWK5($'
DQG:5,7(EXUVWV
FIGURE 44- MODE REGISTER 0 (MR0) DEFINITIONS
BA2 BA 1 BA 0 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Address bus
16 15 14 13 12 11 10
0 0 01 PD
WR
Mode register 0 (MR0)
9
01
M15 M14
8 7 6 5 4 3 2
DLL 01 CAS# latency BT 01
1 0
BL
M1 M0
Mode Register
0
0
0
1
Burst Length
Fixed BL8
0
0
Mode register 0 (MR0)
0
1
Mode register 1 (MR1)
M12
Precharge PD
1
0
Mode register 2 (MR2)
0
DLL off (slow exit)
0
No
1
0
Fixed BC4 (chop)
1
1
Mode register 3 (MR3)
1
DLL on (fast exit)
1
Yes
1
1
Reserved
LOGIC Devices Incorporated
Write Recovery
M6 M5 M4
4 or 8 (on-the-fly via A12)
CAS Latency
M3
READ Burst Type
0
0
0
Reserved
0
0
0
Reserved
0
Sequential (nibble)
0
0
1
5
0
0
1
5
1
Interleaved
0
1
0
6
0
1
0
6
0
1
1
7
0
1
1
7
1
0
0
8
1
0
0
8
1
0
1
10
1
0
1
9
1
1
0
12
1
1
0
10
1
1
1
Reserved
1
1
1
11
M11 M10 M9
Notes:
M8 DLL Reset
1. MR0[16, 13, 7, 2] are reserved for future use and must be programmed to “0.”
www.logicdevices.com
91
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 60: BURST ORDER
Burst Length
Read/Write
&+23
Starting Column
Address (A[2,1,0])
5($'
:5,7(
8
5($'
:5,7(
000
001
Burst Type (Decimal)
Type = Sequential
Type = Interleaved
====
1,2
====
====
1,2
010
====
====
1,2
011
====
====
1,2
100
====
====
1,2
101
====
====
1,2
110
====
====
1,2
111
====
====
1,2
0VV
;;;;
;;;;
1VV
;;;;
;;;;
000
1
001
1
010
1
011
1
100
1
101
1
110
1
111
1
1,3
VVV
127(6
1.
,QWHUQDO5($'DQG:5,7(RSHUDWLRQVVWDUWDWWKHVDPHSRLQWLQWLPHIRU
%&DVWKH\GRIRU%/
DLL RESET
2.
= 'DWDDQG6WUREHRXWSXWGULYHUVLQWULVWDWH
3.
; w'RQuW&DUHw
WRITE RECOVERY
'//5(6(7LVGHILQHGE\05>@VHH)LJXUH3URJUDPPLQJ05>@
WRvwDFWLYDWHVWKH'//5(6(7IXQFWLRQ05>@LVVHOIFOHDULQJPHDQLQJ LW UHWXUQV WR D YDOXH RI vw DIWHU WKH '// 5(6(7 IXQFWLRQ KDV EHHQ
initiated.
:5,7(5(&29(5<WLPHLVGHILQHGE\05>@VHH)LJXUH:5,7(
5(&29(5< YDOXHV RI RU PD\ EH XVHG E\ SURJUDPPLQJ
05>@7KHXVHULVUHTXLUHGWRSURJUDPWKHFRUUHFWYDOXHRI:5,7(
5(&29(5<DQGLVFDOFXODWHGE\GLYLGLQJt:5QVE\t&.QVDQGURXQGLQJ XS D QRQLQWHJHU YDOXH WR WKH QH[W LQWHJHU :5 F\FOHV URXQGXS
(t:5>QV@t&.>QV@
$Q\WLPHWKH'//5(6(7IXQFWLRQKDVEHHQLQLWLDWHG&.(PXVWEH+,*+
DQG WKH FORFN KHOG VWDEOH IRU t'//. FORFN F\FOHV EHIRUH D 5($'
FRPPDQGFDQEHLVVXHG7KLVLVWRDOORZWLPHIRUWKHLQWHUQDOFORFNWREH
V\QFKURQL]HGZLWKWKHH[WHUQDOFORFN)DLOLQJWRZDLWIRUV\QFKURQL]DWLRQ
WRRFFXUPD\UHVXOWLQLQYDOLGRXWSXWWLPLQJVSHFLILFDWLRQVVXFKDVtDQSCK
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LOGIC Devices Incorporated
Notes
====
www.logicdevices.com
92
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
CAS Latency (CL)
PRECHARGE POWER-DOWN (PRECHARGE PD)
7KH35(&+$5*(3'ELWDSSOLHVRQO\ZKHQ35(&+$5*(SRZHUGRZQ
PRGHLVEHLQJXVHG:KHQ05>@LVVHWWRvwWKH'//LVRIIGXULQJ
35(&+$5*(SRZHUGRZQSURYLGLQJDORZHUVWDQGE\FXUUHQWPRGHKRZHYHU t;3'// PXVW EH VDWLVILHG ZKHQ H[LWLQJ :KHQ 05>@ LV VHW WR
vwWKH'//FRQWLQXHVWRUXQGXULQJ35(&+$5*(SRZHUGRZQPRGHWR
HQDEOH D IDVWHU H[LW RI 35(&+$5*( SRZHUGRZQ PRGH KRZHYHU t;3
PXVWEHVDWLVILHGZKHQH[LWLQJVHH3RZHU'RZQPRGHRQ3DJH
7KH&/LVGHILQHGE\05>@DVVKRZQLQ)LJXUH&$6ODWHQF\LVWKH
GHOD\DVPHDVXUHGLQFORFNF\FOHVEHWZHHQWKHLQWHUQDO5($'FRPPDQG
DQGWKHDYDLODELOLW\RIWKHILUVWELWRIYDOLGRXWSXWGDWD7KH&/FDQEHVHW
WRRU''56'5$0L02'VGRQRWVXSSRUWKDOIFORFNODWHQFLHV
([DPSOHVRI&/ DQG&/ DUHVKRZQLQ)LJXUHEHORZ,IDQLQWHUQDO
5($'FRPPDQGLVUHJLVWHUHGDWFORFNHGJHQDQGWKH&$6ODWHQF\LVP
FORFNVWKHGDWDZLOOEHDYDLODEOHQRPLQDOO\FRLQFLGHQWZLWKFORFNHGJHQP
7DEOHLQGLFDWHVWKH&/VVXSSRUWHGDWDYDLODEOHRSHUDWLQJIUHTXHQFLHV
FIGURE 45- READ LATENCY
T0
T1
T2
T3
T4
T5
T6
T7
T8
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
AL = 0, CL = 6
DQS, DQS#
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
DI
n+4
T0
T1
T2
T3
T4
T5
T6
T7
T8
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
AL = 0, CL = 8
DQS, DQS#
DI
n
DQ
Transitioning Data
Don’t Care
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1.
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SRVVLEOH
2.
LOGIC Devices Incorporated
6KRZQZLWKQRPLQDOt'46&.DQGQRPLQDOtDSDQ.
www.logicdevices.com
93
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MODE REGISTER 1 (MR1)
7KH 02'( 5(*,67(5 05 FRQWUROV DGGLWLRQDO IXQFWLRQV DQG IHDWXUHV QRW DYDLODEOH LQ WKH RWKHU PRGH UHJLVWHUV 4 2)) 287387 ',6$%/( '//
(1$%/('//',6$%/(5TTB120YDOXH2'7:5,7(/(9(/,1*3267('&$6$'',7,9(ODWHQF\DQG287387'5,9(675(1*7+7KHVHIXQFWLRQV
DUHFRQWUROOHGYLDWKHELWVVKRZQLQ)LJXUHEHORZ7KH05UHJLVWHULVSURJUDPPHGYLDWKH05FRPPDQGDQGUHWDLQVWKHVWRUHGLQIRUPDWLRQXQWLOLWLV
UHSURJUDPPHGXQWLO5(6(7?JRHV/2:WUXHRUXQWLOWKHGHYLFHORVHVSRZHU5HSURJUDPPLQJWKH05UHJLVWHUZLOOQRWDOWHUWKHFRQWHQWVRIWKHPHPRU\
DUUD\SURYLGHGWKHRSHUDWLRQLVSHUIRUPHGFRUUHFWO\
7KH05UHJLVWHUPXVWEHORDGHGZKHQDOOEDQNVDUHLGOHDQGQREXUVWVDUHLQSURJUHVV7KHFRQWUROOHUPXVWVDWLVI\WKHVSHFLILHGWLPLQJSDUDPHWHUVtMRD and
t02'EHIRUHLQLWLDWLQJDVXEVHTXHQWRSHUDWLRQ
FIGURE 46- MODE REGISTER 1 (MR1) DEFINITION
BA2 BA 1 BA 0 A13 A12 A11 A10 A9 A 8 A7 A6 A5 A4 A3 A 2
A1 A0
Address bus
16 15 14 13 12 11 10 9 8 7 6 5
01 0 1 01 Q Off TDQS 01 RTT 01 WL RTT ODS
M15 M14
4 3 2
1 0
AL RTT ODS DLL
Mode register 1 (MR1)
Mode Register
0
0
Mode register set 0 (MR0)
M12
Q Off
M11
TDQS
0
1
Mode register set 1 (MR1)
0
Enabled
0
Disabled
1
0
Mode register set 2 (MR2)
1
Disabled
1
Enabled
1
1
Mode register set 3 (MR3)
RTT_NOM (ODT)2
M0
DLL Enable
0
Enable (normal)
1
Disable
M5 M1 Output Drive Strength
RTT_NOM (ODT)3
M7 Write Levelization
M9 M6 M2
Non-Writes
Writes
0
Disable (normal)
0 0 0
RTT_NOM disabled
RTT_NOM disabled
1
Enable
0 0 1
RZQ/4 (60Ω [NOM])
RZQ/4 (60Ω [NOM])
0
0
RZQ/6 (40Ω [NOM])
0
1
RZQ/7 (34Ω [NOM])
1
0
Reserved
1
1
Reserved
0 1 0 RZQ/2 (120Ω [NOM]) RZQ/2 (120Ω [NOM])
0 1 1
RZQ/6 (40Ω [NOM])
RZQ/6 (40Ω [NOM])
M4 M3 Additive Latency (AL)
1 0 0 RZQ/12 (20Ω [NOM])
n/a
0
0
Disabled (AL = 0)
1 0 1
RZQ/8 (30Ω [NOM])
n/a
0
1
AL = CL - 1
1 1 0
Reserved
Reserved
1
0
AL = CL - 2
1 1 1
Reserved
Reserved
1
1
Reserved
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1.
2.
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'XULQJZULWHOHYHOLQJLI05>@DQG05>@DUHvwWKHQDOO5TTB120YDOXHVDUHDYDLODEOH
for use.
3.
'XULQJZULWHOHYHOLQJLI05>@LVDvwEXW05>@LVDvwWKHQRQO\5TTB120ZULWHYDOXHV
DUHDYDLODEOHIRUXVH
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ON-DIE TERMINATION (ODT)
DLL ENABLE/DLL DISABLE
7KH'//PD\EHHQDEOHGRUGLVDEOHGE\SURJUDPPLQJ05>@GXULQJWKH
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XVLQJWKHDSSURSULDWH/2$'02'(FRPPDQG
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RTT WHUPLQDWLRQ YDOXH DSSOLHV WR WKH '4[ /'0[ 8'0[ />8@'46[ DQG
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8QOLNH''5''52'7PXVWEHWXUQHGRIISULRUWR5($',1*GDWDRXW
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LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
POSTED CAS ADDITIVE LATENCY (AL)
$/LVVXSSRUWHGWRPDNHWKHFRPPDQGDQGGDWDEXVHIILFLHQWIRUVXVWDLQDEOHEDQGZLGWKVLQ''565$0V05>@GHILQHWKHYDOXHRI$/VHH)LJXUH
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RQO\UHVWULFWLRQLV$&7,9$7(WR5($'RU:5,7($/t t5&'0,1PXVWEHVDWLVILHG$VVXPLQJt5&'0,1 &/DW\SLFDODSSOLFDWLRQXVLQJWKLVIHDWXUHVHWV
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$/:/ $/&:/VHHv02'(5(*,67(505w([DPSOHVRI5($'DQG:5,7(ODWHQFLHVDUHVKRZQLQ)LJXUHDQG)LJXUH
FIGURE 47- READ LATENCY (AL = 5, CL = 6)
BC4
T0
T1
ACTIVE n
READ n
T2
T6
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
t RCD (MIN)
DQS, DQS#
AL = 5
CL = 6
DO
n
DQ
DO
n+1
DO
n+2
DO
n+3
RL = AL + CL = 11
Indicates a Break in
Time Scale
LOGIC Devices Incorporated
www.logicdevices.com
Transitioning Data
Don’t Care
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MODE REGISTER 2 (MR2)
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XQWLOWKHGHYLFHORVHVSRZHU5HSURJUDPPLQJWKH05UHJLVWHUZLOOQRWDOWHUWKHFRQWHQWVRIWKHPHPRU\DUUD\SURYLGHGWKDWWKHRSHUDWLRQKDVEHHQSHUIRUPHG
FRUUHFWO\7KH05UHJLVWHUPXVWEHORDGHGZKHQDOOEDQNVDUHLGOHDQGQRGDWDEXUVWVDUHLQSURJUHVVDQGWKHPHPRU\FRQWUROOHUPXVWZDLWIRUWKHVSHFLILHG
WLPHtMRD and t02'EHIRUHLQLWLDWLQJDVXEVHTXHQWRSHUDWLRQ
7KHWHPSHUDWXUHFRPSHQVDWHGVHOIUHIUHVK7&65IHDWXUHVXEVWDQWLDOO\UHGXFHVWKHVHOIUHIUHVKFXUUHQW,''7&65WDNHVDIIHFWZKHQ7CLVOHVVWKDQoC
DQGWKHDXWRVHOIUHIUHVK$65IXQFWLRQLVHQDEOHG$65LVUHTXLUHGWRXVHWKH7&65IHDWXUHDQGLVHQDEOHGPDQXDOO\YLDPRGHUHJLVWHU05>@6HH
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FIGURE 48- MODE REGISTER 2 (MR2) DEFINITION
BA2 BA 1 BA 0 A13 A12 A11 A10 A9 A8 A7 A 6 A5 A4 A3 A2 A1 A0
Address bus
16 15 14 13 12 11 10 9 8 7 6
0 01 01 01 RTT_WR 01 SRT ASR
Mode Register 2 (MR2)
5
01 1
M15 M14
Mode Register
M5 M4 M3
2 1 0
01 01 01
CAS Write Latency (CWL)
5 CK (t CK ≥ 2.5ns)
0
Mode register set 0 (MR0)
0
Normal (0° C to 85° C)
0
0
0
0
1
Mode register set 1 (MR1)
1
Extended (0°C to 95° C)
0
0
1
1
0
Mode register set 2 (MR2)
0
1
0
6 CK (2.5ns > t CK ≥ 1.875ns)
7 CK (1.875ns > t CK ≥ 1.5ns)
1
1
Mode register set 3 (MR3)
0
1
1
8 CK (1.5ns > t CK ≥ 1.25ns)
1
0
0
1
0
9 CK (1.25ns >tCK ≥ 1.07ns)
1 10 CK (1.071ns >tCK ≥ 0.938ns)
1
1
0
Reserved
1
1
1
Reserved
0
LOGIC Devices Incorporated
3
0
M10 M9
Notes:
M7 Self Refresh Temperature
4
CWL
0
Dynamic ODT
( R TT_WR )
RTT_WR disabled
0
1
1
0
RZQ/2
1
1
Reserved
RZQ/4
M6
0
Auto Self Refresh
(Optional)
Disabled: Manual
1 Enabled: Automatic
1. MR2[16, 13:11, 8, and 2:0] are reserved for future use and must all be programmed to “0.”
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
CAS WRITE LATENCY (CWL)
&:/LVGHILQHGE\05>@DQGLVWKHGHOD\LQFORFNF\FOHVIURPWKHUHOHDVLQJRIWKHLQWHUQDO:5,7(WRWKHODWFKLQJRIWKHILUVWGDWDLQ&:/PXVWEHFRUUHFWO\
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FIGURE 49- CAS WRITE LATENCY
BC4
T0
T1
ACTIVE n
WRITE n
T2
T6
T11
T12
T13
T14
NOP
NOP
NOP
NOP
NOP
NOP
CK#
CK
Command
t RCD (MIN)
DQS, DQS#
AL = 5
CWL = 6
DI
n
DQ
DI
n+1
DI
n+2
DI
n+3
WL = AL + CWL = 11
Indicates A Break in
Time Scale
Transitioning Data
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AUTO SELF REFRESH (ASR)
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SRT vs. ASR
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SELF REFRESH TEMPERATURE (SRT)
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LOGIC Devices Incorporated
www.logicdevices.com
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98
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
DYNAMIC ODT
7KHG\QDPLF2'75TTB:5IHDWXUHLVGHILQHGE\05>@'\QDPLF2'7LVHQDEOHGZKHQDYDOXHLVVHOHFWHG7KLVQHZ''5IHDWXUHHQDEOHVWKH2'7
WHUPLQDWLRQYDOXHWRFKDQJHZLWKRXWLVVXLQJDQ056FRPPDQGHVVHQWLDOO\FKDQJLQJWKH2'7WHUPLQDWLRQvRQWKHIO\w
:LWK G\QDPLF 2'7 5TTB:5 ZKHQ EHJLQQLQJ D :5,7( EXUVW DQG VXEVHTXHQWO\ VZLWFKHV EDFN WR 2'7 5TTB:5 LV HQDEOHG 2'7/&1: 2'7/&1:
2'7/&1:2'7+2'7+DQGt$'&
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MODE REGISTER (MR3)
7KHPRGHUHJLVWHU05FRQWUROVDGGLWLRQDOIXQFWLRQVDQGIHDWXUHVQRWDYDLODEOHYLD0505RU05&XUUHQWO\GHILQHGDVWKH08/7,385326(5(*,67(50357KLVIXQFWLRQLVFRQWUROOHGYLDWKHELWVVKRZQLQ)LJXUH7KH05LVSURJUDPPHGYLDWKH/2$'02'(FRPPDQGDQGUHWDLQVWKHVWRUHGLQIRUPDWLRQXQWLOLWLVSURJUDPPHGDJDLQRUXQWLOWKHGHYLFHORVHVSRZHU5HSURJUDPPLQJWKH05UHJLVWHUZLOOQRWDOWHUWKHFRQWHQWVRIWKHPHPRU\DUUD\SURYLGHG
WKHSURJUDPPLQJRIWKH05KDVEHHQSHUIRUPHGFRUUHFWO\7KH05UHJLVWHUPXVWEHORDGHGZKHQDOOEDQNVDUHLGOHDQGQRGDWDEXUVWVDUHLQSURJUHVVDQG
WKHPHPRU\FRQWUROOHUPXVWZDLWWKHVSHFLILHGWLPHtMRD and t02'EHIRUHLQLWLDWLQJDVXEVHTXHQWRSHUDWLRQ
FIGURE 50 - MODE REGISTER 3 (MR3) DEFINITION
BA2 BA 1 BA 0 A13 A12 A11 A10 A9
16
01
A8
A7 A 6 A5
A4 A3
0
MPR Enable
Normal DRAM operations 2
1
Mode register set 1 (MR1)
1
Dataflow from MPR
0
Mode register set 2 (MR2)
1
Mode register set 3 (MR3)
0
0
0
1
1
A1 A0
15 14 13 12 11 10 9
8 7
6
5 4
3
2
1 0
1
1 01 01 01 01 01 01 01 01 01 01 01 MPR MPR_RF
Mo de register set (MR0)
M15 M14
A2
Mode Register
M2
M1 M0
Address bus
Mode register 3 (MR3)
0
0
MPR READ Function
Predefined pattern 3
0
1
Reserved
1
0
Reserved
1
1
Reserved
127(6
LOGIC Devices Incorporated
1.
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2.
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3.
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www.logicdevices.com
99
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MULTIPURPOSE REGISTER (MPR)
7KH08/7,385326(5(*,67(5IXQFWLRQLVXVHGWRRXWSXWDSUHGHILQHGV\VWHPWLPLQJFDOLEUDWLRQELWVHTXHQFH%LWLVWKHPDVWHUELWWKDWHQDEOHVRUGLVDEOHV
DFFHVVWRWKH035UHJLVWHUDQGELWVDQGGHWHUPLQHZKLFKPRGHWKH035LVSODFHGLQ7KHEDVLFFRQFHSWRIWKHPXOWLSXUSRVHUHJLVWHULVVKRZQLQ)LJXUH
,I05>@LVDvwWKHQWKH035DFFHVVLVGLVDEOHGDQGWKH6'5$0RSHUDWHVLQQRUPDOPRGH+RZHYHULI05>@LVDvwWKHQ6'5$0QRORQJHURXWSXWV
QRUPDOUHDGGDWDEXWRXWSXWV035GDWDDVGHILQHGE\05>@,I05>@LVHTXDOWRvwWKHQDSUHGHILQHGUHDGSDWWHUQIRUV\VWHPFDOLEUDWLRQLVVHOHFWHG
7RHQDEOHWKH035WKH056FRPPDQGLVLVVXHGWR05DQG05>@ VHH7DEOH3ULRUWRLVVXLQJWKH056FRPPDQGDOOEDQNVPXVWEHLQWKHLGOHVWDWH
DOOEDQNVDUHSUHFKDUJHGDQGt53LVPHW:KHQWKH035LVHQDEOHGDQ\VXEVHTXHQW5($'RU5'$3FRPPDQGVDUHUHGLUHFWHGWRWKHPXOWLSXUSRVHUHJLVWHU
7KHUHVXOWLQJRSHUDWLRQZKHQHLWKHUD5($'RUD5'$3FRPPDQGLVLVVXHGLVGHILQHGE\05>@ZKHQ035LVHQDEOHGVHH7DEOH:KHQWKH035LV
HQDEOHGRQO\5($'RU5'$3FRPPDQGVDUHDOORZHGXQWLODVXEVHTXHQW056FRPPDQGLVLVVXHGZLWKWKH035GLVDEOHG05>@ 32:(5'2:16(/)
5()5(6+DQGDQ\RWKHU1215($'RU5'$3FRPPDQGLVQRWDOORZHG7KH5(6(7IXQFWLRQLVVXSSRUWHGGXULQJ035HQDEOHPRGH
FIGURE 51 - MULTIPURPOSE REGISTER (MPR) BLOCK DIAGRAM
Memory core
MR3[2] = 0 (MPR off)
Multipurpose register
pre defined data for READs
MR3[2] = 1 (MPR on)
DQ, DM, DQ S, DQS#
127(6
1.
2.
$SUHGHILQHGGDWDSDWWHUQFDQEHUHDGRXWRIWKH035ZLWKDQH[WHUQDO5($'FRPPDQG
05>@GHILQHVZKHWKHUWKHGDWDIORZFRPHVIURPWKHPHPRU\FRUHRUWKH035:KHQWKHGDWD
IORZ LV GHILQHG WKH 035 FRQWHQWV FDQ EH UHDG RXW FRQWLQXRXVO\ ZLWK D UHJXODU 5($' RU 5'$3
FRPPDQG
LOGIC Devices Incorporated
www.logicdevices.com
100
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
TABLE 61: BURST ORDER
MR3[2]
MPR
0
MR3[1:0]
MPR READ Function
v'RQuW&DUHw
Function
1RUPDO2SHUDWLRQQR035WUDQVDFWLRQ$OOVXEVHTXHQW5($'VFRPHIURP
WKH6'5$0PHPRU\DUUD\$OOVXEVHTXHQW:5,7(VJRWRWKH6'5$0
PHPRU\DUUD\
1
$>@6HH7DEOH
(QDEOH035PRGHVXEVHTXHQW5($'5'$3FRPPDQGVGHILQHGE\ELWV
and 2.
MPR FUNCTIONAL DESCRIPTION
7KH035-('(&GHILQLWLRQDOORZVIRUHLWKHUDSULPH'4IRUORZHUE\WHDQG'4IRUWKHXSSHUE\WHRIHDFKRIWKHZRUGVFRQWDLQHGLQWKH/',L02'WRRXWSXW
WKH035GDWDZLWKWKHUHPDLQLQJ'4VGULYHQ/2:RUIRUDOO'4VWRRXWSXWWKH035GDWD7KH035UHDGRXWVXSSRUWVIL[HG5($'EXUVWDQG5($'EXUVWFKRS
056DQG27)YLD$%&ZLWKUHJXODU5($'ODWHQFLHVDQG$&WLPLQJVDSSOLFDEOH7KLVSURYLGLQJWKH'//LVORFNHGDVUHTXLUHG
035DGGUHVVLQJIRUDYDOLG0355($'LVDVIROORZV
x$>@PXVWEHVHWWRvwDVWKHEXUVWRUGHULVIL[HGSHUQLEEOH
x$VHOHFWVWKHEXUVWRUGHU
x%/$LVVHWWRvwDQGWKHEXUVWRUGHULVIL[HGWR
x)RUEXUVWFKRSFDVHVWKHEXUVWRUGHULVVZLWFKHGRQWKHQLEEOHEDVHDQG
x$ EXUVWRUGHU x$ EXUVWRUGHU x%XUVWRUGHUELWWKHILUVWELWLVDVVLJQHGWR/6%DQGEXUVWRUGHUELWWKHODVWELWLVDVVLJQHGWR06%
x$>@DUHDv'RQuW&DUHw
x$LVDv'RQuW&DUHw
x$LVDv'RQuW&DUHw
x$6HOHFWVEXUVWFKRSPRGHRQWKHIO\LIHQDEOHGZLWKLQ05
x$LVDv'RQuW&DUHw
x%$>@DUHDv'RQuW&DUHw
LOGIC Devices Incorporated
www.logicdevices.com
101
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MPR REGISTER ADDRESS DEFINITIONS and BURSTING ORDER
7KH035FXUUHQWO\VXSSRUWVDVLQJOHGDWDIRUPDW7KLVGDWDIRUPDWLVDSUHGHILQHG5($'SDWWHUQIRUV\VWHPFDOLEUDWLRQ7KHSUHGHILQHGSDWWHUQLVDOZD\VD
UHSHDWLQJELWSDWWHUQ
([DPSOHVRIWKHGLIIHUHQWW\SHRISUHGHILQHG5($'SDWWHUQEXUVWVDUHVKRZQLQ)LJXUHVDQG
TABLE 62: BURST ORDER
MR3[2]
MR3[1:0]
Function
Burst
Length
00
5($'SUHGHILQHGSDWWHUQIRU
BL8
1
Read
A[2:0]
000
Burst Order and Data Pattern
%XUVW2UGHU
3UHGHILQHGSDWWHUQ
V\VWHPFDOLEUDWLRQ
%&
000
Burst Order: 0,1,2,3
3UHGHILQHGSDWWHUQ
%&
100
%XUVW2UGHU
3UHGHILQHGSDWWHUQ
1
1
1
LOGIC Devices Incorporated
01
5)8
10
5)8
11
5)8
www.logicdevices.com
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
QD
102
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
103
DQ
Notes:
0
A [ 15:13]
DQS, DQS#
0
A12/BC#
0
A10/AP
0
00
A[9:3]
A 11
1
A2
1
0
MRS
A[1:0]
t RP
Ta0
3
PREA
T0
Bank add ress
Command
CK#
CK
NOP
NOP
Tc5
NOP
Tc6
t MPRR
MRS
Tc7
0
0
Vali d 1
Val i d
0
0
00
Val i d
Vali d
Vali d
0
NOP
Tc4
02
NOP
Tc3
Vali d
NOP
Tc2
02
RL
NOP
Tc1
3
NOP
Tc0
Vali d
READ1
Tb1
1. READ with BL8 either by MRS or OTF.
2. Memory controller must drive 0 on A[2:0].
t MOD
Tb0
Indicates a Break in
Time Scale
t MOD
NOP
Tc8
NOP
Tc9
Don ’t Care
Valid
Tc10
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 52 - MPR System Read Calibration with BL8: Fixed Burst Order Single Readout
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
DQ
Notes:
0
A[15:13]
DQS, DQS#
0
A12/BC#
0
A10/AP
0
00
A[9:3]
A11
1
A2
1
0
MRS
A[1:0]
t RP
Ta
3
PREA
T0
Bank add ress
Command
CK#
CK
RL
NOP
Tc6
NOP
Tc7
t MPRR
NOP
Tc9
Indicates a Break in
Time Scale
NOP
Tc8
0
00
0
Vali d
3
MRS
Tc10
Vali d
RL
Vali d
0
0
NOP
Tc5
Vali d 1
NO
Tc4
Vali d
NOP
Tc3
0
NOP
Tc2
Vali d
Vali d
NOP
Tc1
Vali d
Vali d
Vali d
12
02
Vali d
02
02
READ1
Vali d
t CCD
Vali d
READ1
Tc0
1. READ with BL8 either by MRS or OTF.
2. Memory controller must drive 0 on A[2:0].
t MOD
Tb
Vali d
Don ’t Care
t MOD
Td
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 53 - MPR System Read Calibration with BL8: Fixed Burst Order, Back-to-Back Readout
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
DQ
DQS, DQS#
Notes:
1.
2.
3.
4.
Vali d 1
0
0
Vali d 1
Val i d
0
A 11
A12/BC#
A[15:13]
Vali d
Val i d
0
1
RL
Vali d
NOP
Tc1
NOP
Tc2
RL
NOP
Tc3
READ with BC4 either by MRS or OTF.
Memory controller must drive 0 on A[1:0].
A2 = 0 selects lower 4 nibble bits 0 . . . 3.
A2 = 1 selects upper 4 nibble bits 4 . . . 7.
Vali d
Vali d
Vali d
A 10/A P
Val i d
00
14
03
A [ 9:3]
02
1
Vali d
READ1
02
t CCD
Vali d
READ1
0
t MOD
Tc0
A2
MRS
Tb
A[1:0]
t RF
Ta
3
PREA
T0
Bank add ress
Command
CK#
CK
NOP
Tc4
NOP
Tc5
NOP
Tc6
NOP
Tc7
t MPRR
0
0
0
0
00
0
Vali d
3
MRS
Tc8
t MOD
NOP
Tc10
Indicates a Break in
Time Scale
NOP
Tc9
Don ’t Care
Valid
Td
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 54 - MPR System Read Calibration with BC4: Lower Nibble, Then Upper Nibble
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
DQ
DQS, DQS#
A [ 15:13]
0
0
A12/BC#
0
A 10/A P
0
00
A [ 9:3]
A 11
1
A2
1
0
MRS
A[1:0]
t RF
Ta
3
PREA
T0
Bank add ress
Command
CK#
CK
t MOD
RL
Vali d
Vali d 1
Vali d 1
Val i d
Vali d
Vali d
Val i d
Val i d
Vali d
04
13
Val i d
02
02
READ1
Vali d
t CCD
Tc0
Vali d
READ1
Tb
Notes:
NOP
Tc1
1.
2.
3.
4.
RL
NOP
Tc3
NOP
Tc4
NOP
Tc5
NOP
Tc6
READ with BC4 either by MRS or OTF.
Memory controller must drive 0 on A[1:0].
A2 = 1 selects upper 4 nibble bits 4 . . . 7.
A2 = 0 selects lower 4 nibble bits 0 . . . 3.
NOP
Tc2
t MPRR
NOP
Tc7
0
0
0
0
00
0
t MOD
NOP
Tc9
Indicates a Break in
Time Scale
Vali d
3
MR S
Tc8
NOP
Tc10
Don ’t Care
Valid
Td
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 55 - MPR System Read Calibration with BC4: Upper Nibble, Then Lower Nibble
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
MPR READ PREDEFINED PATTERN
7KHSUHGHWHUPLQHG5($'FDOLEUDWLRQSDWWHUQLVDIL[HGSDWWHUQRI7KHIROORZLQJLVDQH[DPSOHRIXVLQJWKH5($'RXWSUHGHWHUPLQHG5($'
FDOLEUDWLRQSDWWHUQ7KHH[DPSOHLVWRSHUIRUPPXOWLSOH5($'6IURPWKH08/7,385326(5(*,67(5035LQRUGHUWRGRV\VWHPOHYHO5($'WLPLQJFDOLEUDWLRQEDVHGRQWKHSUHGHWHUPLQHGDQGVWDQGDUGL]HGSDWWHUQ
7KHIROORZLQJSURWRFRORXWOLQHVWKHVWHSVXVHGWRSHUIRUPWKH5($'FDOLEUDWLRQ
x3UHFKDUJHDOOEDQNV
x$IWHUt53LVVDWLVILHGVHW05605>@ DQG05>@ 7KLVUHGLUHFWVDOOVXEVHTXHQW5($'VDQG/RDGVWKHSUHGHILQHGSDWWHUQLQWR
WKH035$VVRRQDVtMRD and t02'DUHVDWLVILHGWKH035LVDYDLODEOH
x'DWD:5,7(RSHUDWLRQVDUHQRWDOORZHGXQWLOWKH035UHWXUQVWRWKHQRUPDO6'5$0VWDWH
x,VVXHD5($'ZLWKEXUVWRUGHULQIRUPDWLRQDOORWKHUDGGUHVVSLQVDUHv'RQuW&DUHw
x$>@ GDWDEXUVWRUGHULVIL[HGVWDUWLQJDWQLEEOH
x$ IRU%/EXUVWRUGHULVIL[HGDV
x$ XVH%/
x$IWHU5/ $/&/WKH6'5$0EXUVWVRXWWKHSUHGHILQHG5($'FDOLEUDWLRQSDWWHUQ
x7KHPHPRU\FRQWUROOHUUHSHDWVWKHFDOLEUDWLRQ5($'VXQWLO5($'GDWDFDSWXUHDWWKHPHPRU\FRQWUROOHULVRSWLPL]HG
x$IWHUWKHODVW0355($'EXUVWDQGDIWHU t0355KDVEHHQVDWLVILHGLVVXH05605>@ DQG05>@ v'RQuW&DUHwWRWKHQRUPDO
6'5$0VWDWH$OOVXEVHTXHQW5($'DQG:5,7(DFFHVVHVZLOOEHUHJXODU5($'6DQG:5,7(6IURPWRWKH6'5$0DUUD\
x:KHQ tMRD and t02'DUHVDWLVILHGIURPWKHODVW056WKHUHJXODU6'5$0FRPPDQGVVXFKDV$&7,9$7(D0HPRU\EDQNIRUUHJXODU
5($'RU:5,7(DFFHVVDUHSHUPLWWHG
MODE REGISTER SET (MRS)
7KHPRGHUHJLVWHUVDUHORDGHGYLDLQSXWV%$>@$>@%$>@GHWHUPLQHVZKLFKPRGHUHJLVWHULVSURJUDPPHG
x%$
x%$
x%$
x%$
%$
%$
%$
%$
%$
%$
%$
%$
IRU05
IRU05
IRU05
IRU05
7KH056FRPPDQGFDQRQO\EHLVVXHGRUUHLVVXHGZKHQDOOEDQNVDUHLGOHDQGLQWKHSUHFKDUJHGVWDWHt53LVVDWLVILHGDQGQRGDWDEXUVWVDUHLQ
SURJUHVV7KHFRQWUROOHUPXVWZDLWWKHVSHFLILHGWLPHt05'EHIRUHLQLWLDWLQJDVXEVHTXHQWRSHUDWLRQVXFKDVDQ$&7,9$7(FRPPDQG7KHUHLVDOVR
DUHVWULFWLRQDIWHULVVXLQJDQ056FRPPDQGZLWKUHJDUGWRZKHQWKHXSGDWHGIXQFWLRQVEHFRPHDYDLODEOH7KLVSDUDPHWHULVVSHFLILHGE\t02'%RWK
tMRD and t02'SDUDPHWHUVDUHVKRZQLQ)LJXUHDQG9LRODWLQJHLWKHURIWKHVHUHTXLUHPHQWVZLOOUHVXOWLQXQVSHFLILHGRSHUDWLRQ
ZQ CALIBRATION
7KH=4&$/,%5$7,21FRPPDQGLVXVHGWRFDOLEUDWHWKH6'5$0RXWSXWGULYHUV521DQG2'7YDOXHV5TTRYHUSURFHVVYROWDJHDQGWHPSHUDWXUHSURYLGHGDGHGLFDWHG:H[WHUQDOUHVLVWRULVFRQQHFWHGIURPWKH6'5$0uV=4EDOOWR9VV4
''56'5$0VQHHGDORQJHUWLPHWRFDOLEUDWH5ONDQG2'7DWSRZHUXS,1,7,$/,=$7,21DQG6(/)5()5(6+H[LWDQGDUHODWLYHO\VKRUWHUWLPHWRSHUIRUP
SHULRGLFFDOLEUDWLRQV''56'5$0GHILQHVWZR=4&$/,%5$7,21FRPPDQGV=4&$/,%5$7,21/21*=4&/DQG=4&$/,%5$7,216+257=4&6
$QH[DPSOHRI=4&$/,%5$7,21WLPLQJLVVKRZQLQ)LJXUH
$OOEDQNVPXVWEH35(&+$5*('DQGt53PXVWEHPHWEHIRUH=4&/RU=4&6FRPPDQGVFDQEHLVVXHGWRWKH6'5$01RRWKHUDFWLYLWLHVRWKHUWKDQDQRWKHU
=4&/RU=4&6FRPPDQGPD\EHLVVXHGWRWKH6'5$0FDQEHSHUIRUPHGRQWKH6'5$0DUUD\E\WKHFRQWUROOHUIRUWKHGXUDWLRQRI t=4,1,7RU t=423(5
7KHTXLHWWLPHRQWKH6'5$0DUUD\KHOSVDFFXUDWHO\FDOLEUDWH5ONDQG2'7$IWHU6'5$0FDOLEUDWLRQLVDFKLHYHGWKH6'5$0VKRXOGGLVDEOHWKH=4EDOOuV
FXUUHQWFRQVXPSWLRQSDWKWRUHGXFHRYHUDOOSRZHUXVDJH
=4&$/,%5$7,21FRPPDQGVFDQEHLVVXHGLQSDUDOOHOWR'//5(6(7DQGORFNLQJWLPH8SRQ6(/)5()5(6+H[LWDQH[SOLFLW=4&/LVUHTXLUHGLI=4&$/,%5$7,21LVGHVLUHG
,QGXDOUDQNV\VWHPGHVLJQVWKDWVKDUHWKH=4UHVLVWRUEHWZHHQGHYLFHVWKHFRQWUROOHUPXVWQRWDOORZRYHUODSRIt=4,17t=423(5RUt=4&6EHWZHHQUDQNV
LOGIC Devices Incorporated
www.logicdevices.com
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
L9D3256M32SBG1
L9D3512M32SBG1
PRELIMINARY INFORMATION
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 56 - ZQ CALIBRATION TIMING (ZQCL AND ZQCS)
T0
T1
Ta0
Ta1
Ta2
Ta3
Tb0
Tb1
Tc0
Tc1
Tc2
ZQCL
NOP
NOP
NOP
Valid
Vali d
ZQCS
NOP
NOP
NOP
Valid
Address
Vali d
Vali d
Vali d
A10
Vali d
Vali d
Vali d
CK#
CK
Command
CKE
1
Vali d
Vali d
1
Vali d
ODT
2
Vali d
Vali d
2
Vali d
DQ
3
A ctivities
3
High-Z
Activities
High-Z
t ZQ INIT or t ZQ OPER
t ZQCS
Indicates a Break in
Time Scale
Don ’t Care
127(6
1.
&.(PXVWEHFRQWLQXRXVO\UHJLVWHUHG+,*+GXULQJWKHFDOLEUDWLRQSURFHGXUH
2.
2'7PXVWEHGLVDEOHGYLDWKH2'7VLJQDORUWKH056GXULQJWKHFDOLEUDWLRQSURFHGXUH
3.
$OOGHYLFHVFRQQHFWHGWRWKH'4EXVVKRXOGEH+LJK=GXULQJFDOLEUDWLRQ
ACTIVATE
%HIRUHDQ\5($'RU:5,7(FRPPDQGVFDQEHLVVXHGWRDEDQNZLWKLQWKH6'5$0D52:LQWKDWEDQNPXVWEHRSHQHG$&7,9$7('7KLVLVDFFRPSOLVKHG
YLDWKH$&7,9$7(FRPPDQGZKLFKVHOHFWVERWKWKH%$1.DQGWKH52:WREH$&7,9$7('
$IWHUD52:LVRSHQHGZLWKDQ$&7,9$7(FRPPDQGD5($'RU:5,7(FRPPDQGPD\EHLVVXHGWRWKDW52:VXEMHFWWRWKHt5&'VSHFLILFDWLRQ+RZHYHULI
WKHDGGLWLYHODWHQF\LVSURJUDPPHGFRUUHFWO\D5($'RU:5,7(FRPPDQGPD\EHLVVXHGSULRUWRt5&'0,1,QWKLVRSHUDWLRQWKH6'5$0HQDEOHVD5($'
RU:5,7(FRPPDQGWREHLVVXHGDIWHUWKH$&7,9$7(FRPPDQGIRUWKDWEDQNEXWSULRUWRt5&'0,1VHHv3267('&$6$'',7,9(/$7(1&<$/tRCD
0,1VKRXOGEHGLYLGHGE\WKHFORFNSHULRGDQGURXQGHGXSWRWKHQH[WZKROHQXPEHUWRGHWHUPLQHWKHHDUOLHVWFORFNHGJHDIWHUWKH$&7,9$7(FRPPDQGRQ
ZKLFKWKH5($'RU:5,7(FRPPDQGFDQEHHQWHUHG7KHVDPHSURFHGXUHLVXVHGWRFRQYHUWRWKHUVSHFLILFDWLRQOLPLWVIURPWLPHXQLWVWRFORFNF\FOHV
:KHQDWOHDVWRQHEDQNLVRSHQDQ\5($'WR5($'FRPPDQGGHOD\RU:5,7(WR:5,7(FRPPDQGGHOD\LVUHVWULFWHGWRt&&'0,1
$ VXEVHTXHQW $&7,9$7( FRPPDQG WR D GLIIHUHQW 52: LQ WKH VDPH %$1. FDQ RQO\ EH LVVXHG DIWHU WKH SUHYLRXV $&7,9( 52: KDV EHHQ FORVHG 35(&+$5*('7KHPLQLPXPWLPHLQWHUYDOEHWZHHQVXFFHVVLYH$&7,9$7(FRPPDQGVWRWKHVDPH%$1.LVGHILQHGE\tRC.
$VXEVHTXHQW$&7,9$7(FRPPDQGWRDQRWKHU%$1.FDQEHLVVXHGZKLOHWKHILUVW%$1.LVEHLQJDFFHVVHGZKLFKUHVXOWVLQDUHGXFWLRQRIWRWDO52:$&&(66
RYHUKHDG7KHPLQLPXPWLPHLQWHUYDOEHWZHHQVXFFHVVLYH$&7,9$7(FRPPDQGVPD\EHLVVXHGLQDJLYHQt)$:0,1SHULRGDQGWKHt55'0,1UHVWULFWLRQ
VWLOODSSOLHV7KHt)$:0,1SDUDPHWHUDSSOLHVUHJDUGOHVVRIWKHQXPEHURI%$1.6DOUHDG\RSHQHGRUFORVHG
LOGIC Devices Incorporated
www.logicdevices.com
108
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 57 - EXAMPLE: MEETING tRRD (MIN) AND tRCD (MIN)
T0
T1
T2
T3
T4
T5
T8
T9
T10
T11
Command
ACT
NOP
NOP
ACT
NOP
NOP
NOP
NOP
NOP
RD/WR
Add ress
Row
BA[2:0]
Bank x
CK#
CK
Row
Col
Bank y
Bank y
t RRD
t RCD
Indicates a Break in
Time Scale
Don ’t Care
FIGURE 58 - EXAMPLE: tFAW
CK#
T0
T1
T4
T5
T8
T9
T10
T11
T19
T20
ACT
NOP
ACT
NOP
A CT
NOP
ACT
NOP
NOP
A CT
CK
Command
Add ress
BA[2:0]
Row
Bank a
Row
Row
Row
Row
Bank b
Bank c
Bank d
Bank ye
t RRD
t FAW
Indicates a Break in
Time Scale
LOGIC Devices Incorporated
www.logicdevices.com
109
Don ’t Care
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
READ
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T0
T7
T8
T9
T10
T11
T12
T12
Command
READ
NOP
NOP
NOP
NOP
NOP
NOP
NOP
Add ress
Bank a,
Col n
CK#
CK
CL = 8, AL = 0
DQS, DQS#
DO
n
DQ
Indicates a Break in
Time Scale
Notes:
Don ’t Care
1. DO n = data-out from column n.
2. Subsequent elements of data-out appear in the programmed order following DO
. n.
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LOGIC Devices Incorporated
Transitioning Data
www.logicdevices.com
110
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
Bank,
Col n
Add ress 2
DQ3
DQS, DQS#
REA D
T0
Command 1
CK
CK#
Notes:
NOP
T1
1.
2.
3.
4.
111
RL = 5
NOP
T3
Bank,
Col b
REA D
T4
t RPRE
NOP
T5
DO
n
DO
n+1
NOP
T6
DO
n+3
RL = 5
DO
n+2
DO
n+4
NOP
T7
DO
n+5
DO
n+6
NOP
T8
DO
n+7
NOP
T9
DO
b
DO
b+1
DO
b+2
NOP
T10
DO
b+3
DO
b+4
NO P
T11
DO
b+5
NOP
T12
DO
b+7
Transitioning Data
DO
b+6
t RPST
NOP
T13
Don ’t Care
NOP
T14
NOP commands are shown for ease of illustration; other commands may be valid at these times.
The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during READ command at T0 and T4.
DO n (or b) = data-out from column n (or column b).
BL8, RL = 5 (CL = 5, AL = 0).
t CCD
NOP
T2
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 60 - Consecutive READ Bursts (BL8)
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
Bank,
Col n
Address 2
DQ3
DQS, DQS#
READ
T0
Comman d 1
CK
CK#
Notes:
NOP
T1
1.
2.
3.
4.
112
RL = 5
NOP
T3
Bank,
Col b
READ
T4
t RPRE
NOP
T5
DO
n
DO
n+1
NOP
T6
RL = 5
DO
n+2
DO
n+3
t RPST
NOP
T7
NOP
T8
t RPRE
NOP
T9
DO
b
DO
b+1
NOP
T10
DO
b+2
DO
b+3
t RPST
NOP
T11
NOP
T13
Transitioning Data
NOP
T12
Don ’t Care
NOP
T14
NOP commands are shown for ease of illustration; other commands may be valid at these times.
The BC4 setting is activated by either MR0[1:0] = 10 or MR0[1:0] = 01 and A12 = 0 during READ command at T0 and T4.
DO n (or b) = data-out from column n (or column b).
BC4, RL = 5 (CL = 5, AL = 0).
t CCD
NOP
T2
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 61 - Consecutive READ Bursts (BC4)
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
DQ
DQS, DQS#
READ
Bank a,
Col n
Add ress
T0
Command
CK
CK#
Notes:
NOP
T1
1.
2.
3.
4.
NOP
T2
CL = 8
NOP
T4
Bank a,
Col b
READ
T5
NOP
T6
NOP
T7
DO
n
NOP
T8
CL = 8
NOP
T9
NOP
T10
NOP
T11
NOP
T12
NOP
T13
DO
b
AL = 0, RL = 8.
DO n (or b) = data-out from column n (or column b).
Seven subsequent elements of data-out appear in the programmed order following DO n.
Seven subsequent elements of data-out appear in the programmed order following DO b.
NOP
T3
NOP
T14
NOP
T15
Transitioning Data
NOP
T16
Don ’t Care
NOP
T17
PRELIMINARY INFORMATION
113
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 62 - Nonconsecutive READ Bursts
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
Bank,
Col n
Add ress 2
DQ3
DQS, DQS#
READ
T0
Command 1
CK
CK#
NOP
T2
NOP
T3
NOP
T4
NOP
T5
Notes:
DO
n
DO
n+1
DO
n+2
Bank,
Col b
WRITE
T6
DO
n+3
DO
n+4
NOP
T7
DO
n+5
NOP
T9
DO
n+7
t RPST
WL = 5
DO
n+6
NOP
T8
NOP
T10
t WPRE
DI
n
NOP
T11
DI
n+1
DI
n+2
NOP
T12
DI
n+3
DI
n+5
DI
n+6
NOP
T14
Transitioning Data
DI
n+4
t BL = 4 clocks
NOP
T13
Don ’t Care
DI
n+7
t WPST
t WTR
t WR
NOP
T15
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at T0, and
the WRITE command at T6.
RL = 5
t RPRE
READ-to-WRITE command delay = RL + t CCD + 2t CK - WL
NOP
T1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 63 - READ (BL8) to WRITE (BL8)
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
DQ3
DQS, DQS#
Add ress2
Command 1
CK
CK#
NOP
T1
NOP
T2
NOP
T3
WRITE
T4
Bank,
Col n
Notes:
1.
2.
3.
4.
DO
n
NOP
T5
DO
n +1
NOP
T7
DO
n+ 3
t RPST
WL = 5
DO
n +2
NOP
T6
NOP
T8
t WPRE
DI
n
NOP
T9
DI
n +1
DI
n +2
NOP
T10
DI
n +3
t WPST
t BL = 4 clo cks
NOP
T11
NOP
T12
T14
t WR
t WTR
NOP
Transitioning Data
NOP
T13
NOP
T15
Don ’t Care
NOP commands are shown for ease of illustration; other commands may be valid at these times.
The BC4 OTF setting is activated by MR0[1:0] and A12 = 0 during READ command at T0 and WRITE command at T4.
DO n = data-out from column n; DI n = data-in from column b.
BC4, RL = 5 (AL - 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
RL = 5
t RPRE
Bank,
Col b
READ-to-WRITE command delay = RL + t CC D/2 + 2 t CK - WL
READ
T0
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 64 - READ (BC4) to WRITE (BC4) OTF
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
Bank,
Col n
Add ress 2
DQ3
DQS, DQS#
READ
T0
Command 1
CK
CK#
NOP
T2
NOP
T3
NOP
T4
NOP
T5
Notes:
DO
n
DO
n+1
DO
n+2
Bank,
Col b
WRITE
T6
DO
n+3
DO
n+4
NOP
T7
DO
n+5
NOP
T9
DO
n+7
t RPST
WL = 5
DO
n+6
NOP
T8
NOP
T10
t WPRE
DI
n
NOP
T11
DI
n+1
DI
n+2
NOP
T12
DI
n+3
DI
n+5
DI
n+6
NOP
T14
Transitioning Data
DI
n+4
t BL = 4 clocks
NOP
T13
Don ’t Care
DI
n+7
t WPST
t WTR
t WR
NOP
T15
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the READ command at T0, and
the WRITE command at T6.
3. DO n = data-out from column, DI b = data-in for column b.
4. BL8, RL = 5 (AL = 0, CL = 5), WL = 5 (AL = 0, CWL = 5).
RL = 5
t RPRE
READ-to-WRITE command delay = RL + t CCD + 2t CK - WL
NOP
T1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 65 - READ to PRECHARGE (BL8)
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
ACT
PRE
Don ’t Care
DO
n+3
DO
n+2
NOP
DQ
Add ress
DQS, DQS#
READ
Bank a,
Col n
Command
NOP
T2
T1
T0
www.logicdevices.com
CK
C K#
LOGIC Devices Incorporated
t RAS
t RTP
T3
NOP
T4
NOP
T5
Bank a,
(or all)
T6
NOP
T7
NOP
T8
NOP
DO
n
DO
n+1
t RP
T9
NOP
T10
NOP
NOP
T11
T12
NOP
Bank a,
Row b
T13
T14
NOP
T15
NOP
T16
NOP
Transitioning Data
NOP
T17
Figure 66 - READ to PRECHARGE (BC4)
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
LOGIC Devices Incorporated
www.logicdevices.com
RL = AL + CL = 11
CL = 6
AL = 5
DQ
DQS, DQS#
CK
Command
BC4
CK#
T0
ACTIVE n
T1
READ n
t RCD (MIN)
T2
NOP
T6
NOP
T11
NOP
T12
NOP
Indicates a Break in
Time Scale
DO
n
DO
n+1
T13
NOP
DO
n+2
Transitioning Data
DO
n+3
T14
NOP
Don’t Care
Figure 67 - READ to PRECHARGE (AL = 5, CL = 6)
118
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
LOGIC Devices Incorporated
www.logicdevices.com
Don ’t Care
t RP
Indicates A Break in
Time Scale
DO
n+2
t RAS (MIN)
CL = 6
t RTP (MIN)
AL = 4
DQ
Add ress
DQS, DQS#
READ
Bank a,
Col n
Command
CK
CK#
T0
T1
NOP
T2
NOP
T3
NOP
T4
NOP
T5
NOP
T6
NOP
T7
NOP
T8
NOP
T9
NOP
T10
NOP
DO
n
DO
n+1
NOP
T11
DO
n+3
T12
NOP
T13
NOP
Transitioning Data
Bank a,
Row b
NOP
Ta0
ACT
Figure 68 - READ with Auto Precharge (AL = 4, CL = 6)
119
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
READ
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LOGIC Devices Incorporated
www.logicdevices.com
120
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
www.logicdevices.com
121
Notes:
All DQ collectively
DQ3 (first data no lon ger valid)
DQ3 (last data valid)
1.
2.
3.
4.
5.
6.
7.
Bank,
Col n
Add ress 2
DQS, DQS#
READ
T0
Command 1
CK
CK#
NOP
T2
RL = AL + CL
NOP
T3
t RPRE
t DQSQ (MAX)
t LZ (DQ) MIN
NOP
T4
Data valid
DO
n
DO
n
t QH
DO
n
NOP
T5
t DQSQ (MAX)
NOP
T7
NOP
T8
t RPST
NOP
T9
DO
n+1
DO
n+2
Data valid
DO
n+3
DO
n+4
DO
n+5
DO
n+7
Transitioning Data
DO
n+6
t QH
DO
DO
DO
DO
DO
DO
DO
n+1
n+2
n+3
n+4
n+5
n+6
n+7
DO
DO
DO
DO
DO
DO
DO
n+3
n+1
n+2
n+4
n+5
n+6
n+7
NOP
T6
Don ’t Care
t HZ (DQ) MAX
NOP
T10
NOP commands are shown for ease of illustration; other commands may be valid at these times.
The BL8 setting is activated by either MR0[1, 0] = 0, 0 or MR0[0, 1] = 0, 1 and A12 = 1 during READ command at T0.
DO n = data-out from column n.
BL8, RL = 5 (AL = 0, CL = 5).
Output timings are referenced to VCCQ/2 and DLL on and locked.
t DQSQ defines the skew between DQS, DQS# to data and does not define DQS, DQS# to clock.
Early data transitions may not always happen at the same DQ. Data transitions of a DQ can vary (either early or late)
within a burst.
NOP
T1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 69 - Data Output Timing – tDQSQ and Data Valid Window
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
OUTPUT TIMING
t+=DQG t/=WUDQVLWLRQVRFFXULQWKHVDPHDFFHVVWLPHDVYDOLGGDWDWUDQVLWLRQV7KHVHSDUDPHWHUVDUHUHIHUHQFHGWRDVSHFLILFYROWDJHOHYHOZKLFKVSHFLILHV
ZKHQWKHGHYLFHRXWSXWLVQRORQJHUGULYLQJt+='46DQGt+='4RUEHJLQVGULYLQJt/='46t/='4)LJXUHVKRZVDPHWKRGWRFDOFXODWHWKHSRLQW
ZKHQWKHGHYLFHLVQRWORQJHUGULYLQJ t+='46DQG t+='4RUEHJLQVGULYLQJ t/='46 t/='4E\PHDVXULQJWKHVLJQDODWWZRGLIIHUHQWYROWDJHV7KH
DFWXDOYROWDJHPHDVXUHPHQWSRLQWVDUHQRWFULWLFDODVORQJDVWKHFDOFXODWLRQLVFRQVLVWHQW7KHSDUDPHWHUVt/='46t/='4t+='46DQGt+='4DUH
defined as single-ended.
LOGIC Devices Incorporated
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122
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Feb 11, 2013 LDS-L9D3xxxM32SBG1
LOGIC Devices Incorporated
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DQS, DQS#
late strobe
DQS, DQS#
early strobe
CK#
CK
t LZ (DQS)MIN
123
t RPRE
t RPRE
Bit 0
Bit 0
t QSH
Bit 2
Bit 1
t QSL
t QSL
t QSL
Bit 2
t QSH
Bit 3
Bit 4
Bit 5
t QSL
Bit 4
Bit 5
Bit 6
Bit 7
t RPST
Bit 6
Bit 7
t RPST
t HZ (DQS) MAX
T5
t HZ (DQS) MIN
t DQSCK(MAX)
T4
t DQSCK(MIN)
t DQSCK(MAX)
T3
t DQSCK(MIN)
t DQSCK(MAX)
Bit 3
t QSH
T2
t DQSCK(MIN)
t DQSCK(MAX)
Bit 1
t QSH
T1
t DQSCK(MIN)
t LZ (DQS)MAX
T0
RL measured
to this point
T6
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 70 - Data Strobe Timing – READs
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
Figure 71 - Method for Calculating tLZ and tHZ
VOH - xmV
VTT + 2xmV
VOH - 2xmV
VTT + xmV
t LZ (DQS), t LZ (DQ)
t HZ (DQS), t HZ (DQ)
T2
T1
VOL + 2xmV
VTT - xmV
VOL + xmV
VTT - 2xmV
LOGIC Devices Incorporated
T2
t LZ (DQS),t LZ (DQ) begin point = 2 × T1 - T2
t HZ (DQS),t HZ (DQ) end point = 2 × T1 - T2
Notes:
T1
1. Within a burst, the rising strobe edge is not necessarily fixed at t DQSCK (MIN) or t DQSCK
(MAX). Instead, the rising strobe edge can vary between t DQSCK (MIN) and t DQSCK (MAX).
2. The DQS high pulse width is defined by t QSH, and the DQS low pulse width is defined by
t QSL. Likewise, t LZ (DQS) MIN and t HZ (DQS) MIN are not tied to t DQSCK (MIN) (early strobe
case) and t LZ (DQS) MAX and t HZ (DQS) MAX are not tied to t DQSCK (MAX) (late strobe
case); however, they tend to track one another.
3. The minimum pulse width of the READ preamble is defined by t RPRE (MIN). The minimum
pulse width of the READ postamble is defined by t RPST (MIN).
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High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 72 - tRPRE TIMING
CK
VTT
CK#
tA
tB
DQS
VTT
Single-ended signal, provided
as background information
tC
tD
VTT
DQS#
Single-ended signal, provided
as background information
T1
t RPRE begins
DQS - DQS#
t RPRE
0V
T2
t RPRE ends
Resultin g differential
signal relevant for
t RPRE specification
FIGURE 73 - tRPST TIMING
CK
VTT
CK#
tA
DQS
Single-ended signal, provided
as background information
VTT
tB
tC
tD
DQS#
VTT
Single-ended signal, provided
as background information
t RPST
DQS - DQS#
Resultin g differential
signal relevant for
t RPST specification
LOGIC Devices Incorporated
www.logicdevices.com
0V
T1
t RPST begins
T2
t RPST ends
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
FIGURE 74 - tWPRE TIMING
CK
VTT
CK#
T1
t WPRE begins
DQS - DQS#
0V
t WPRE
T2
t WPRE ends
Resulting differential
signal relevant for
t WPRE specification
FIGURE 75 - tWPST TIMING
CK
VTT
CK#
t WPST
DQS - DQS#
Resulting differential
signal relevant for
t WPST specification
LOGIC Devices Incorporated
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0V
T1
t WPST begins
T2
t WPST ends
High Performance, Integrated Memory Module Product
Feb 11, 2013 LDS-L9D3xxxM32SBG1
PRELIMINARY INFORMATION
L9D3256M32SBG1
L9D3512M32SBG1
8-16 Gb, DDR3, 256-512M x 32 Single Channel Memory Module
WRITE
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t'466 QVKRZHYHU)LJXUHLQFOXGHVt'4660,1DQGt'4660$;FDVHV
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